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1. 发明授权

US06716646B1 Method and apparatus for performing overlay measurements using scatterometry 有权
标题翻译：使用散射法进行覆盖测量的方法和装置
公开(公告)号：US06716646B1
公开(公告)日：2004-04-06
申请号：US09906517
申请日：2001-07-16
申请人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton , Richard J. Markle
发明人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton , Richard J. Markle
IPC分类号： H01L2166
CPC分类号： H01L22/12
摘要： The present invention provides for a method and an apparatus for overlay measurements using optical techniques. At least one semiconductor device is processed. Metrology data from the processed semiconductor device is acquired. A scatterometry overlay analysis based upon the metrology data is performed. At least one modified manufacturing parameter is calculated based upon the scatterometry overlay analysis.
摘要翻译：本发明提供一种使用光学技术进行覆盖测量的方法和装置。至少一个半导体器件被处理。获取来自处理后的半导体器件的计量数据。执行基于测量数据的散射测绘覆盖分析。基于散点分析叠加分析计算至少一个修改后的制造参数。

2. 发明授权

US07262864B1 Method and apparatus for determining grid dimensions using scatterometry 有权
标题翻译：使用散射法确定网格尺寸的方法和装置
公开(公告)号：US07262864B1
公开(公告)日：2007-08-28
申请号：US09897573
申请日：2001-07-02
申请人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
发明人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
IPC分类号： G01B11/14 , G01N21/86 , G01V8/00 , H01L21/00 , H01L21/66 , G01R31/26
CPC分类号： G01B11/24 , G03F7/70625
摘要： A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings; illuminating at least a portion of the grid with a light source; measuring light reflected from the illuminated portion of the grid to generate a reflection profile; and determining a dimension of the grid based on the reflection profile. A metrology tool is adapted to receive a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grid. The detector is adapted to measure light reflected from the illuminated portion of the grid to generate a reflection profile. The data processing unit is adapted to determine a dimension of the grid based on the reflection profile.
摘要翻译：测试结构包括与第一组多行相交的第一多行和第二多行。限定具有开口的网格的第一和第二多行线。用于确定网格尺寸的方法包括提供具有测试结构的晶片，该测试结构包括限定具有开口的网格的多个相交线; 用光源照亮网格的至少一部分; 测量从所述格栅的被照亮部分反射的光以产生反射分布; 以及基于所述反射分布来确定所述网格的尺寸。测量工具适于接收具有测试结构的晶片，该测试结构包括限定具有开口的格栅的多个相交线。计量工具包括光源，检测器和数据处理单元。光源适于照亮网格的至少一部分。检测器适于测量从栅格的照明部分反射的光以产生反射分布。数据处理单元适于基于反射分布来确定网格的尺寸。

3. 发明授权

US06804014B1 Method and apparatus for determining contact opening dimensions using scatterometry 失效
标题翻译：使用散射法确定接触开口尺寸的方法和装置
公开(公告)号：US06804014B1
公开(公告)日：2004-10-12
申请号：US09897576
申请日：2001-07-02
申请人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
发明人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
IPC分类号： G01B1114
CPC分类号： G03F7/70491 , G01B11/14 , G03F7/705 , G03F7/70558 , G03F7/70616 , G03F7/70625
摘要： A test structure includes a plurality of lines and a plurality of contact openings defined in the lines. A method for determining contact opening dimensions includes providing a wafer having a test structure comprising a plurality of lines and a plurality of contact openings defined in the lines; illuminating at least a portion of the contact openings with a light source; measuring light reflected from the illuminated portion of the contact openings to generate a reflection profile; and determining a dimension of the contact openings based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of lines and a plurality of contact openings defined in the lines includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the contact openings. The detector is adapted to measure light reflected from the illuminated portion of the contact openings to generate a reflection profile. The data processing unit is adapted to determine a dimension of the contact openings based on the reflection profile.
摘要翻译：测试结构包括多条线和在线中限定的多个接触开口。用于确定接触开口尺寸的方法包括提供具有测试结构的晶片，该测试结构包括限定在所述线中的多条线和多个接触开口; 用光源照射至少一部分接触开口; 测量从接触开口的被照射部分反射的光以产生反射分布; 以及基于反射曲线确定接触开口的尺寸。适于接收具有测试结构的测量工具的测量结构包括多条线和在该线中限定的多个接触开口，包括光源，检测器和数据处理单元。光源适于照亮至少一部分接触开口。检测器适于测量从接触开口的照射部分反射的光以产生反射曲线。数据处理单元适于基于反射曲线确定接触开口的尺寸。

4. 发明授权

US06650423B1 Method and apparatus for determining column dimensions using scatterometry 失效
标题翻译：使用散射法确定色谱柱尺寸的方法和装置
公开(公告)号：US06650423B1
公开(公告)日：2003-11-18
申请号：US09897623
申请日：2001-07-02
申请人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
发明人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
IPC分类号： G01B1100
CPC分类号： G01B11/00
摘要： A test structure includes a plurality of trenches and a plurality of columns defined in the trenches. A method for determining column dimensions includes providing a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches; illuminating at least a portion of the columns with a light source; measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and determining a dimension of the columns based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the columns. The detector is adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile. The data processing unit is adapted to determine a dimension of the columns based on the reflection profile.
摘要翻译：测试结构包括多个沟槽和限定在沟槽中的多个列。用于确定柱尺寸的方法包括提供具有测试结构的晶片，该测试结构包括限定在沟槽中的多个沟槽和多个列; 用光源照射柱的至少一部分; 测量从所述列的被照亮部分反射的光以产生反射曲线; 以及基于所述反射概况确定所述列的尺寸。适于接收具有包括多个沟槽的测试结构的晶片的测量工具和在沟槽中限定的多个列包括光源，检测器和数据处理单元。光源适于照亮柱的至少一部分。检测器适于测量从列的照明部分反射的光以产生反射曲线。数据处理单元适于基于反射曲线来确定列的尺寸。

5. 发明授权

US06602723B1 Method of integrating scatterometry metrology structures directly into die design 有权
标题翻译：将散射测量结构直接集成到模具设计中的方法
公开(公告)号：US06602723B1
公开(公告)日：2003-08-05
申请号：US09824285
申请日：2001-04-02
申请人： Richard J. Markle , James Broc Stirton
发明人： Richard J. Markle , James Broc Stirton
IPC分类号： H01L2166
CPC分类号： H01L22/34 , G01N21/4788
摘要： The present invention is directed to a method of incorporating metrology grating structures into die design. In one embodiment, the invention is directed to a wafer comprised of a semiconducting substrate, a plurality of production die formed on the substrate, and at least one non-production die formed on the substrate, the non-production die having at least one grating structure formed therein that will ultimately be measured in subsequent metrology tests. The present invention is also directed to a method that comprises providing a semiconducting substrate, forming at least one production integrated circuit device in a plurality of production die formed on the substrate, and forming at least one grating structure in the non-production die. The method further comprises illuminating at least one of the grating structures formed in the non-production die and measuring light reflected off of the illuminated grating structure to generate an optical characteristic trace for the illuminated grating structure formed in the non-production die.
摘要翻译：本发明涉及一种将计量光栅结构并入模具设计中的方法。在一个实施例中，本发明涉及由半导体基板，形成在基板上的多个生产模具和形成在基板上的至少一个非生产模具组成的晶片，非生产模具具有至少一个光栅其中形成的结构将最终在随后的计量测试中被测量。本发明还涉及一种方法，其包括提供半导体衬底，在形成在衬底上的多个生产模具中形成至少一个生产集成电路器件，并在非生产模具中形成至少一个光栅结构。该方法还包括照亮形成在非生产模具中的光栅结构中的至少一个并测量从被照射的光栅结构反射的光，以产生在非生产模具中形成的照明光栅结构的光学特征迹线。

6. 发明授权

US06529282B1 Method of controlling photolithography processes based upon scatterometric measurements of photoresist thickness, and system for accomplishing same 有权
标题翻译：基于光致抗蚀剂厚度的散射测量控制光刻工艺的方法和用于实现其的系统
公开(公告)号：US06529282B1
公开(公告)日：2003-03-04
申请号：US09879338
申请日：2001-06-11
申请人： James Broc Stirton , Richard J. Markle
发明人： James Broc Stirton , Richard J. Markle
IPC分类号： G01B1128
CPC分类号： G03F7/70625
摘要： The present invention is generally directed to a method of controlling photolithography processes based upon scatterometric measurements of photoresist thickness, and system for accomplishing same. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which corresponds to a grating structure comprised of a plurality of photoresist features having a known thickness, forming at least one grating structure in a layer of photoresist, the formed grating structure being comprised of a plurality of photoresist features having an unknown thickness, and illuminating the formed grating structure. The method further comprises measuring light reflected off of the formed grating structure to generate an optical characteristic trace for the formed grating structure, and determining the unknown thickness of the photoresist features by comparing the generated optical characteristic trace to at least one optical characteristic trace from the library.
摘要翻译：本发明一般涉及一种基于光致抗蚀剂厚度的散射测量来控制光刻工艺的方法，以及用于实现其的系统。在一个实施例中，该方法包括提供光学特性迹线库，每个光栅特征迹线对应于由具有已知厚度的多个光致抗蚀剂特征组成的光栅结构，在光致抗蚀剂层中形成至少一个光栅结构，所形成的光栅结构由具有未知厚度的多个光致抗蚀剂特征组成，并且照射所形成的光栅结构。该方法还包括测量从所形成的光栅结构反射的光以产生用于所形成的光栅结构的光学特征迹线，以及通过将所产生的光学特性曲线与从所述光学特征迹线至少一个光学特性迹线进行比较来确定光致抗蚀剂特征的未知厚度图书馆。

7. 发明授权

US07502702B1 Method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities 有权
标题翻译：用于动态调节传感器和/或计量灵敏度的方法和装置
公开(公告)号：US07502702B1
公开(公告)日：2009-03-10
申请号：US11221078
申请日：2005-09-07
申请人： Richard J. Markle , Christopher A. Bode , Kevin R. Lensing
发明人： Richard J. Markle , Christopher A. Bode , Kevin R. Lensing
IPC分类号： G01D18/00
CPC分类号： G01D18/00
摘要： The present invention provides a method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities. The method includes accessing measurement information provided by a first measurement device and modifying a sensitivity of a second measurement device based on the measurement information provided by the first measurement device.
摘要翻译：本发明提供一种用于动态调节传感器和/或计量灵敏度的方法和装置。该方法包括访问由第一测量装置提供的测量信息，并且基于由第一测量装置提供的测量信息来修改第二测量装置的灵敏度。

8. 发明授权

US07774670B2 Method and apparatus for dynamically determining tester recipes 有权
标题翻译：用于动态确定测试仪配方的方法和设备
公开(公告)号：US07774670B2
公开(公告)日：2010-08-10
申请号：US11853304
申请日：2007-09-11
申请人： Richard J. Markle , Douglas C. Kimbrough , Eric O. Green , Robert J. Chong
发明人： Richard J. Markle , Douglas C. Kimbrough , Eric O. Green , Robert J. Chong
IPC分类号： G01R31/28 , G06F11/00
CPC分类号： G01R31/31707 , G01R31/31721
摘要： A method includes retrieving a group test parameter determined based on test results associated with a plurality of integrated circuit devices. A particular integrated circuit device is tested using a test program and the group test parameter.
摘要翻译：一种方法包括检索基于与多个集成电路装置相关联的测试结果确定的组测试参数。使用测试程序和组测试参数测试特定的集成电路设备。

9. 发明授权

US07257458B1 Automated integrated circuit device manufacturing facility using central control 有权
标题翻译：使用中央控制的自动化集成电路器件制造设备
公开(公告)号：US07257458B1
公开(公告)日：2007-08-14
申请号：US11313196
申请日：2005-12-20
申请人： Richard J. Markle
发明人： Richard J. Markle
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32051 , G05B2219/32266 , G05B2219/45031 , Y02P90/20
摘要： The present invention provides a method, an apparatus, and an automated semiconductor fabrication facility for determining control information based on global goals of a semiconductor manufacturing facility. The method includes accessing information indicative of at least one global goal of a semiconductor manufacturing facility, determining control information based on the at least one global goal, and providing a portion of the control information to each of a plurality of control units. Each of the plurality of control units is configured to control a corresponding manufacturing activity based on the provided portion of the control information.
摘要翻译：本发明提供一种用于基于半导体制造设备的全局目标来确定控制信息的方法，装置和自动化半导体制造设备。该方法包括访问指示半导体制造设施的至少一个全局目标的信息，基于至少一个全局目标确定控制信息，以及将控制信息的一部分提供给多个控制单元中的每一个。多个控制单元中的每一个被配置为基于所提供的控制信息的部分来控制对应的制造活动。

10. 发明授权

US06790683B1 Methods of controlling wet chemical processes in forming metal silicide regions, and system for performing same 失效
标题翻译：在形成金属硅化物区域中控制湿化学工艺的方法以及用于执行其的系统
公开(公告)号：US06790683B1
公开(公告)日：2004-09-14
申请号：US10303224
申请日：2002-11-25
申请人： Richard J. Markle , Terri A. Couteau
发明人： Richard J. Markle , Terri A. Couteau
IPC分类号： H01L2100
CPC分类号： H01L21/67253 , G01N21/47 , H01L21/67086 , H01L22/20
摘要： The present invention is generally directed to various methods of controlling wet chemical processes in forming metal silicide regions, and a system for performing same. In one illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal while the wet chemical process is being performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal. In another illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal after at least some of the wet chemical process has been performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal.
摘要翻译：本发明一般涉及在形成金属硅化物区域中控制湿化学工艺的各种方法，以及用于执行其的系统。在一个说明性实施例中，该方法包括提供具有未反应的难熔金属层和形成于其上的至少一个金属硅化物区域的基底，执行湿化学工艺以去除至少一部分未反应的难熔金属层，至少测量在进行湿化学处理时，未反应的难熔金属层的一部分的一个特征，并且基于所测量的未反应的难熔金属层的该部分的至少一个特征来控制湿化学工艺的至少一个参数。在另一说明性实施例中，该方法包括提供具有未反应的难熔金属层和形成在其上方的至少一个金属硅化物区域的基底，执行湿化学工艺以去除至少一部分未反应的难熔金属层，至少测量在进行了至少一些湿化学处理之后，未反应的难熔金属层的该部分的一个特征是基于所测定的层的该部分的至少一个特性来控制湿化学工艺的至少一个参数的未反应的难熔金属。

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