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    • 1. 发明授权
    • Method and apparatus for fault detection classification of multiple tools based upon external data
    • 基于外部数据的多种工具的故障检测分类方法和装置
    • US07321993B1
    • 2008-01-22
    • US10883364
    • 2004-07-01
    • Richard J. MarkleElfido Coss, Jr.
    • Richard J. MarkleElfido Coss, Jr.
    • G06F11/00
    • G05B23/0235G05B2223/02
    • The present invention is generally directed to various methods and systems for fault detection control of multiple tools based upon external data. In one illustrative embodiment, the method includes monitoring each of a plurality of tools to determine if a fault condition occurs in any of the tools, each of the tools being comprised of at least one integrated metrology device, monitoring external data regarding at least one parameter that may impact an operation performed in each of the tools, and determining if an indicated fault condition in at least one of the tools is a valid fault condition or a systemic fault condition associated with a change in a value of the at least one parameter.
    • 本发明一般涉及用于基于外部数据的多个工具的故障检测控制的各种方法和系统。 在一个说明性实施例中,该方法包括监视多个工具中的每个工具以确定是否在任何工具中发生故障状况,每个工具由至少一个集成测量装置组成,监视关于至少一个参数的外部数据 这可能影响在每个工具中执行的操作,并且确定至少一个工具中的指示的故障状况是否是与所述至少一个参数的值的变化相关联的有效故障状况或系统故障状况。
    • 4. 发明授权
    • Method and apparatus for monitoring tool health
    • 用于监测工具健康的方法和装置
    • US06594589B1
    • 2003-07-15
    • US09863822
    • 2001-05-23
    • Elfido Coss, Jr.Richard J. MarklePatrick M. Cowan
    • Elfido Coss, Jr.Richard J. MarklePatrick M. Cowan
    • G01B344
    • G05B19/4184G05B2219/31357G05B2219/45031Y02P80/15Y02P90/14
    • A method for monitoring health of a tool includes receiving at least one tool parameter related to the processing of a workpiece in a tool; receiving a model selection trigger; selecting a tool health model based on the model selection trigger; generating at least one predicted tool parameter based on the selected tool health model; and generating a tool health rating for the tool based on a comparison between the measured tool parameter and the predicted tool parameter. A tool health monitor includes a library of tool health models, a model selector, and a fault detection and classification unit. The model selector is adapted to receive a model selection trigger and select a tool health model based on the model selection trigger. The fault detection and classification unit is adapted to receive at least one tool parameter related to the processing of a workpiece in a tool, generate at least one predicted tool parameter based on the selected tool health model, and generate a tool health rating for the tool based on a comparison between the received tool parameter and the predicted tool parameter.
    • 用于监测工具健康的方法包括:接收与工具中的工件的处理有关的至少一个工具参数; 接收模型选择触发; 基于模型选择触发选择工具健康模型; 基于所选择的工具健康模型生成至少一个预测的工具参数; 并且基于所测量的工具参数和所预测的工具参数之间的比较,为所述工具生成工具健康评级。 工具健康监测器包括工具健康模型库,模型选择器和故障检测和分类单元。 模型选择器适于接收模型选择触发,并根据模型选择触发选择工具健康模型。 所述故障检测和分类单元适于接收与工具中的工件的处理有关的至少一个刀具参数,基于所选择的刀具健康模型生成至少一个预测刀具参数,并为所述刀具生成刀具健康等级 基于所接收的刀具参数与预测刀具参数之间的比较。
    • 7. 发明授权
    • Methods of controlling wet chemical processes in forming metal silicide regions, and system for performing same
    • 在形成金属硅化物区域中控制湿化学工艺的方法以及用于执行其的系统
    • US06790683B1
    • 2004-09-14
    • US10303224
    • 2002-11-25
    • Richard J. MarkleTerri A. Couteau
    • Richard J. MarkleTerri A. Couteau
    • H01L2100
    • H01L21/67253G01N21/47H01L21/67086H01L22/20
    • The present invention is generally directed to various methods of controlling wet chemical processes in forming metal silicide regions, and a system for performing same. In one illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal while the wet chemical process is being performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal. In another illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal after at least some of the wet chemical process has been performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal.
    • 本发明一般涉及在形成金属硅化物区域中控制湿化学工艺的各种方法,以及用于执行其的系统。 在一个说明性实施例中,该方法包括提供具有未反应的难熔金属层和形成于其上的至少一个金属硅化物区域的基底,执行湿化学工艺以去除至少一部分未反应的难熔金属层,至少测量 在进行湿化学处理时,未反应的难熔金属层的一部分的一个特征,并且基于所测量的未反应的难熔金属层的该部分的至少一个特征来控制湿化学工艺的至少一个参数 。 在另一说明性实施例中,该方法包括提供具有未反应的难熔金属层和形成在其上方的至少一个金属硅化物区域的基底,执行湿化学工艺以去除至少一部分未反应的难熔金属层,至少测量 在进行了至少一些湿化学处理之后,未反应的难熔金属层的该部分的一个特征是基于所测定的层的该部分的至少一个特性来控制湿化学工艺的至少一个参数 的未反应的难熔金属。
    • 8. 发明授权
    • Measurement system for detecting chemical species within a semiconductor
processing device chamber
    • 用于检测半导体处理装置室内的化学物质的测量系统
    • US5999886A
    • 1999-12-07
    • US923492
    • 1997-09-05
    • Michel A. MartinRichard J. MarkleJames K. Fidler
    • Michel A. MartinRichard J. MarkleJames K. Fidler
    • G01N33/00G01N27/00
    • G01N33/0062
    • A measurement system is presented for detecting the presence of one or more harmful chemical species within one or more chambers of a semiconductor wafer processing device. Chemical species of interest include oxygen (O.sub.2), nitrogen (N.sub.2), moisture (H.sub.2 O), and organic compounds associated with photoresist processing. Such organic compounds include isopropyl alcohol (CH.sub.3 CH(OH)CH.sub.3), acetone (CH.sub.3 COCH.sub.3), and ethyl-3-ethoxy propionate (C.sub.7 H.sub.14 O.sub.3). Candidate semiconductor wafer processing devices include evaporation, sputtering, and low pressure chemical vapor deposition (LPCVD) devices. The measurement system measures the concentrations of chemical species within each monitored chamber of the semiconductor wafer processing device: (i) during the processing of semiconductor wafers within the semiconductor wafer processing device, and (ii) during recovery periods following preventive maintenance or repair activities performed upon the semiconductor wafer processing device. Performing measurements during recovery periods aids in returning the semiconductor wafer processing device to service following preventive maintenance or repair activities. Data collection is not performed at other times (e.g., when the semiconductor wafer processing device is idle) in order to reduce data storage requirements. The measurement system includes one or more ambient sampling sensors coupled to a data collection computer through a control interface. Each ambient sampling sensor is in gaseous communication with ambients within the one or more monitored chambers. The control interface triggers data collection during the processing of one or more semiconductor wafers within the semiconductor wafer processing device, and following a maintenance activity performed upon the semiconductor wafer processing device.
    • 提供了一种用于检测在半导体晶片处理装置的一个或多个室内存在一种或多种有害化学物质的测量系统。 感兴趣的化学物质包括氧(O 2),氮(N 2),水分(H 2 O)和与光致抗蚀剂加工相关的有机化合物。 这些有机化合物包括异丙醇(CH 3 CH(OH)CH 3),丙酮(CH 3 COCH 3)和乙基-3-乙氧基丙酸酯(C 7 H 14 O 3)。 候选半导体晶片处理装置包括蒸发,溅射和低压化学气相沉积(LPCVD)装置。 测量系统测量半导体晶片处理装置的每个监测室内的化学物质的浓度:(i)在半导体晶片处理装置内的半导体晶片的处理期间,以及(ii)在执行预防性维护或修复活动之后的恢复期间 在半导体晶片处理装置上。 在恢复期间执行测量有助于将半导体晶片处理装置返回到维修之后进行预防性维护或维修活动。 在其他时间(例如当半导体晶片处理装置空闲时)不进行数据收集,以便减少数据存储要求。 测量系统包括通过控制接口耦合到数据采集计算机的一个或多个环境采样传感器。 每个环境采样传感器与一个或多个监测室内的环境气态连通。 控制接口在半导体晶片处理装置内的一个或多个半导体晶片的处理期间触发数据收集,并且跟随在半导体晶片处理装置上执行的维护活动。
    • 9. 发明授权
    • Device and method for aligning a laser
    • 激光对准的装置和方法
    • US5686996A
    • 1997-11-11
    • US450693
    • 1995-05-25
    • James K. FidlerRichard J. Markle
    • James K. FidlerRichard J. Markle
    • G01B11/27G01J1/42G01B11/00G01J1/40G01N21/01
    • G01J1/4257G01B11/272
    • A device is provided for aligning a laser. For example, such a device could be used to align a laser as part of a particle measurement device in a semiconductor process tool. The device consists of a rigid member with alignment marks which define the intended point of impingement of a beam emitted from the laser. The laser is moved to allow the emitted laser beam to extend upon the alignment device and impinge upon the alignment marks. When the laser beam impinges upon alignment marks, preferably formed near the center of the alignment device, the laser is determined to be in proper alignment. The device is configured having a outer circumference equal to the terminating element which the device replaces during the alignment procedure. The device is then removed from the semiconductor process tool and the terminating element, either a beam stop or a photodiode detector, is re-inserted. A procedure utilizing relatively few steps for properly aligning the laser is thereby provided.
    • 提供了用于对准激光器的装置。 例如,这种装置可以用于将激光器作为半导体工艺工具中的粒子测量装置的一部分进行对准。 该装置由具有对准标记的刚性构件组成,其限定从激光器发射的光束的冲击的预期点。 激光被移动以允许发射的激光束在对准装置上延伸并撞击对准标记。 当激光束撞击对准标记时,优选地在对准装置的中心附近形成,激光被确定为正确对准。 该装置被配置为具有等于在对准过程期间设备替代的终止元件的外圆周。 然后将器件从半导体工艺工具中取出,并重新插入端接元件,光束停止或光电二极管检测器。 从而提供了使用相对较少的步骤以适当对准激光的步骤。