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21. 发明授权

US06806115B2 Semiconductor light emitting device and method for producing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06806115B2
公开(公告)日：2004-10-19
申请号：US10285170
申请日：2002-10-30
申请人： Norikatsu Koide , Junji Yamamoto , Tsuyoshi Dohkita , Nobuhiko Sawaki , Yoshio Honda , Yousuke Kuroiwa , Masahito Yamaguchi
发明人： Norikatsu Koide , Junji Yamamoto , Tsuyoshi Dohkita , Nobuhiko Sawaki , Yoshio Honda , Yousuke Kuroiwa , Masahito Yamaguchi
IPC分类号： H01L2100
CPC分类号： H01L33/08
摘要： A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 &mgr;m or less.
摘要翻译：一种制造半导体发光器件的方法包括以下步骤：在硅衬底的表面上形成具有多个开口的掩模层; 以及在氮化物半导体材料的多个开口中形成包括发光层的柱状多层结构。掩模层的多个开口的两个相邻开口之间的宽度为10um或更小。

22. 发明授权

US06635901B2 Semiconductor device including an InGaAIN layer 有权
标题翻译：半导体器件包括内置层
公开(公告)号：US06635901B2
公开(公告)日：2003-10-21
申请号：US10021677
申请日：2001-12-12
申请人： Nobuhiko Sawaki , Yoshio Honda , Norikatsu Koide , Katsuki Furukawa
发明人： Nobuhiko Sawaki , Yoshio Honda , Norikatsu Koide , Katsuki Furukawa
IPC分类号： H01L310336
CPC分类号： H01L33/20 , H01L27/153 , H01L33/16
摘要： A semiconductor device includes a silicon substrate and a compound semiconductor layer formed on a main plane of the silicon substrate. The compound semiconductor layer is represented by the general formula of InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1). The silicon substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the silicon substrate, or a plane inclined in a range within 3 degrees in an arbitrary direction from the inclined plane. The compound semiconductor layer is formed on the slope. The semiconductor device includes compound semiconductor layers represented by AlxGayInzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) on a silicon substrate. The silicon substrate has a main plane constituted by a plane in a range of ±5 degrees in an arbitrary direction from a (112) plane. The compound semiconductor layers are formed on the main plane.
摘要翻译：半导体器件包括硅衬底和形成在硅衬底的主平面上的化合物半导体层。化合物半导体层由通式InxGayAlzN（其中x + y + z =1,0,0≤x≤1,0<= y <= 1,0

23. 发明授权

US06607595B1 Method for producing a light-emitting semiconductor device 失效
标题翻译：发光半导体器件的制造方法
公开(公告)号：US06607595B1
公开(公告)日：2003-08-19
申请号：US09677788
申请日：2000-10-02
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hasimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hasimoto , Isamu Akasaki
IPC分类号： C30B2514
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlXGa1-xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1-XN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1-xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1-xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：本文公开了（1）一种使用其中n型氮化镓化合物半导体（Al x Ga 1-X N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法，通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

24. 发明授权

US06472689B1 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06472689B1
公开(公告)日：2002-10-29
申请号：US09677787
申请日：2000-10-02
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法，通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

25. 发明授权

US06249012B1 Light emitting semiconductor device using gallium nitride group compound 失效
标题翻译：使用氮化镓基化合物的发光半导体器件
公开(公告)号：US06249012B1
公开(公告)日：2001-06-19
申请号：US08956950
申请日：1997-10-23
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10−1 &OHgr;cm to 8×10−3 &OHgr;cm or a carrier concentration ranging from 6×1016/cm3 to 3×1018/cm3.
摘要翻译：一种半导体器件，其具有掺杂硅的n型氮化镓层，其电阻范围为3×10 -1Ω〜8×10 -3Ω/ cm或载流子浓度为6×10 16 / cm 3〜3×10 18 / cm 3。

26. 发明授权

US5733796A Light-emitting semiconductor device using gallium nitride group compound 失效
标题翻译：使用氮化镓族化合物的发光半导体装置
公开(公告)号：US5733796A
公开(公告)日：1998-03-31
申请号：US556232
申请日：1995-11-09
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L33/00 , H01L33/02 , H01L33/32 , H01L21/20
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.
摘要翻译：使用具有含有低浓度p型杂质的绝缘氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的iL层的氮化镓系化合物半导体（Al x Ga 1-x N）的发光半导体装置。含有高浓度p型杂质的绝缘氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的iH层与iL层相邻。低载流子浓度的n型氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的n层与iL层相邻。 n型氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的n +层与n型杂质掺杂的高载流子浓度相邻。

27. 发明授权

US5620557A Sapphireless group III nitride semiconductor and method for making same 失效
标题翻译：无蓝宝石III族氮化物半导体及其制造方法
公开(公告)号：US5620557A
公开(公告)日：1997-04-15
申请号：US494846
申请日：1995-06-26
申请人： Katsuhide Manabe , Masayoshi Koike , Hisaki Kato , Norikatsu Koide , Isamu Akasaki , Hiroshi Amano
发明人： Katsuhide Manabe , Masayoshi Koike , Hisaki Kato , Norikatsu Koide , Isamu Akasaki , Hiroshi Amano
IPC分类号： C30B25/02 , H01L33/32 , H01L21/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L33/007 , H01L33/0075 , Y10S117/915
摘要： A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.
摘要翻译：一次由满足公式Al x Ga y In 1-x-y N的III族氮化物化合物半导体制造两个蓝宝石层（3a，3b）的方法，包括x = 0，y = 0和x = y = 0，以及利用半导体层（3a，3b）之一作为基板（3）的LED（10）包括在蓝宝石基板（1）的每一侧上形成两个氧化锌（ZnO）中间层（2a，2b）的步骤，形成满足式Al x Ga y In 1-x-y N的两个III族氮化物化合物半导体层（3a，3b），包括x = 0，y = 0和x = y = 0，各层叠在每个中间ZnO层，2b），并且通过仅用于ZnO层（2a，2b）的蚀刻液蚀刻从中分离出中间ZnO层（2a，2b）和蓝宝石衬底（1）。如此获得的III族氮化物化合物层中的至少一个设置有在其上形成有电极（6,7）的相对侧上的n和p个MOVPE层（4,5），以形成在450nm区域中发射的LED，并且具有器件电阻低。

28. 发明授权

US5583879A Gallum nitride group compound semiconductor laser diode 失效
标题翻译：镓氮化物半导体激光二极管
公开(公告)号：US5583879A
公开(公告)日：1996-12-10
申请号：US423946
申请日：1995-04-19
申请人： Shiro Yamazaki , Norikatsu Koide , Katsuhide Manabe , Isamu Akasaki , Hiroshi Amano
发明人： Shiro Yamazaki , Norikatsu Koide , Katsuhide Manabe , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01S5/30 , H01S5/323 , H01S3/18 , H01L3/00
CPC分类号： H01S5/32341 , H01S5/3086
摘要： A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 . In another embodiment, the active layer (5) is doped with silicon (Si).
摘要翻译：满足式（Al x Ga 1-x）y In 1-y N，包括0≤x≤1且0≤y≤1的氮化镓族化合物半导体激光二极管（10）在具有比活性层（5）更宽的带隙的层（4,6）之间夹着有源层（5）的结结构结构。有源层（5）可以包括满足式（Al x Ga 1-x）y In 1-y N的包含镁（Mg）的p型导电氮化镓族化合物半导体，包括0≤x≤1和0≤ y

29. 发明授权

US06888867B2 Semiconductor laser device and fabrication method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06888867B2
公开(公告)日：2005-05-03
申请号：US10109458
申请日：2002-03-26
申请人： Nobuhiko Sawaki , Yoshio Honda , Norifumi Kameshiro , Masahito Yamaguchi , Norikatsu Koide , Shigetoshi Ito , Tomoki Ono , Katsuki Furukawa
发明人： Nobuhiko Sawaki , Yoshio Honda , Norifumi Kameshiro , Masahito Yamaguchi , Norikatsu Koide , Shigetoshi Ito , Tomoki Ono , Katsuki Furukawa
IPC分类号： H01S5/02 , H01S5/042 , H01S5/32 , H01S5/323 , H01S5/00
CPC分类号： H01S5/32341 , H01S5/0207 , H01S5/021 , H01S5/0425 , H01S5/3203 , H01S2304/00
摘要： A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.
摘要翻译：半导体激光器件包括衬底和由衬底上形成的氮化物半导体构成的n-GaN层。衬底包括具有从衬底的主平面倾斜62度的平面或从倾斜面任意方向倾斜3度的平面的斜面的沟槽。在斜面上形成n-GaN层。在n-GaN层上形成有由氮化物半导体构成的下包层，有源层和上覆层。有源层具有基本上与主平面的平面取向一致的平面取向。

30. 发明申请

US20050001245A1 Method for manufacturing gallium nitride group compound semiconductor 失效
标题翻译：氮化镓系化合物半导体的制造方法
公开(公告)号：US20050001245A1
公开(公告)日：2005-01-06
申请号：US10899024
申请日：2004-07-27
申请人： Norikatsu Koide
发明人： Norikatsu Koide
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , H01L21/00 , H01L21/20 , H01L21/205 , H01L33/00 , H01L31/0328
CPC分类号： H01L21/0254 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).
摘要翻译：在硅衬底1上以条纹或栅格图案形成Al0.15Ga0.85N层2。在衬底1被暴露的区域A中和在层2上方定义的区域B中形成GaN层3.此时，GaN层以外延和三维生长（不仅在垂直方向上而且在横向方向）。由于GaN层在横向上外延生长，所以在横向生长区域（区域A中获得具有大大减少的位错数量的GaN化合物半导体） 1暴露）。

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