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1. 发明专利

JP2008026997A Pedestrian recognition device and pedestrian recognition method 审中-公开
标题翻译： PEDESTRIAN识别装置和PEDESTRIAN识别方法
公开(公告)号：JP2008026997A
公开(公告)日：2008-02-07
申请号：JP2006196124
申请日：2006-07-18
申请人： Denso Corp , Masafumi Hashimoto , 株式会社デンソー , 雅文橋本
发明人： TAKAGI SEIWA , HASHIMOTO MASAFUMI
IPC分类号： G08G1/16
CPC分类号： G06K9/00369 , G06K9/00805
摘要： PROBLEM TO BE SOLVED: To accurately recognize moving pedestrians.
SOLUTION: The positions of reflecting objects are detected by a laser radar which scans the inside of a detection area in a predetermined detection cycle with irradiation laser beams, to determine coordinate positions in a two-dimensional coordinate system. At this time, whether the reflecting objects are stopped or moving is determined from the position change state of the reflecting objects in the two-dimensional coordinate system in a plurality of detection cycles. The reflecting objects adjacent on the two-dimensional coordinates among the reflecting determined to be moving are grouped. Since only the moving objects are grouped pedestrians can be accurately recognized from the size of an aggregate of the grouped reflecting objects.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：准确地识别移动行人。解决方案：通过激光雷达检测反射物体的位置，该激光雷达利用照射激光在预定的检测周期内扫描检测区域的内部，以确定二维坐标系中的坐标位置。此时，在多个检测周期中，从二维坐标系中的反射物体的位置变化状态确定反射物体是否停止或移动。被确定为移动的反射中的二维坐标上相邻的反射物体被分组。由于只有移动物体被分组，所以可以从分组的反射物体的聚集体的大小中准确地识别行人。版权所有（C）2008，JPO＆INPIT

2. 发明授权

US09093915B2 Motor current detecting device and air conditioning apparatus 有权
标题翻译：电机电流检测装置和空调装置
公开(公告)号：US09093915B2
公开(公告)日：2015-07-28
申请号：US12742117
申请日：2008-11-13
申请人： Masafumi Hashimoto , Keisuke Shimatani , Hirohito Maeda , Satoshi Yagi , Motonobu Ikeda
发明人： Masafumi Hashimoto , Keisuke Shimatani , Hirohito Maeda , Satoshi Yagi , Motonobu Ikeda
IPC分类号： F25D17/04 , H02M5/42 , F25B49/02 , H02M1/00
CPC分类号： H02M5/42 , F25B49/022 , F25B49/025 , F25B2600/021 , F25B2700/00 , F25B2700/15 , F25B2700/151 , H02M2001/0009 , H02P27/06 , H02P2205/01
摘要： A motor current detecting device includes a first wire, an instantaneous current detecting unit, an average electric current detecting unit, and a calculation unit. The first wire is configured and arranged to carry flow of a motor current that has been passed through a motor and a drive current that has been passed through a motor drive unit to drive the motor. The instantaneous current detecting unit is configured and arranged to detect an instantaneous value for a sum of the motor current and the drive current flowing on the first wire. The average electric current detecting unit is configured and arranged to detect an average value of the sum of the motor current and the drive current flowing on the first wire. The calculation unit is configured to calculate the motor current on the basis of the instantaneous value and the average value.
摘要翻译：电动机电流检测装置包括第一线，瞬时电流检测单元，平均电流检测单元和计算单元。第一线被构造和布置成承载已经通过电动机的电动机电流的流动和已经通过电动机驱动单元驱动电动机的驱动电流。瞬时电流检测单元被配置和布置成检测电动机电流和在第一导线上流动的驱动电流之和的瞬时值。平均电流检测单元被配置和设置为检测电动机电流和在第一线路上流动的驱动电流之和的平均值。计算单元被配置为基于瞬时值和平均值来计算电动机电流。

3. 发明授权

US08385095B2 Electric power supply circuit and PAM control method for the same 有权
标题翻译：电源电路和PAM控制方法相同
公开(公告)号：US08385095B2
公开(公告)日：2013-02-26
申请号：US12593809
申请日：2008-03-31
申请人： Ryou Nakamoto , Masafumi Hashimoto , Keisuke Shimatani , Keiichi Yoshisaka , Masakazu Katou
发明人： Ryou Nakamoto , Masafumi Hashimoto , Keisuke Shimatani , Keiichi Yoshisaka , Masakazu Katou
IPC分类号： H02M7/00 , H02M1/12
CPC分类号： H02M1/4208 , H02M7/217 , Y02B70/126
摘要： An increase in a ripple voltage of a capacitor in a smoothing circuit is prevented to achieve a compact capacitor and cost reduction for capacitors in an electric power supply circuit which performs PAM control using a switching element. An electric power supply circuit includes a bridge circuit for rectifying alternating current power, a smoothing circuit which has two capacitors serially connected to each other, and a PAM control section for turning a switching element on and off at a predetermined timing. The PAM control section includes a phase difference detection section which detects a phase shift of a PAM waveform based on a change in a voltage difference between the two capacitors, and a phase correction section which corrects the phase of the PAM waveform so that an input current has a sine waveform.
摘要翻译：防止平滑电路中的电容器的纹波电压的增加，从而实现使用开关元件进行PAM控制的电源电路中的电容器的小型电容器和成本降低。电源电路包括用于整流交流电力的桥式电路，具有彼此串联连接的两个电容器的平滑电路，以及用于在预定定时打开和关闭开关元件的PAM控制部分。 PAM控制部包括：相位差检测部，其基于两个电容器之间的电压差的变化来检测PAM波形的相移;以及相位校正部，其校正PAM波形的相位，使得输入电流具有正弦波形。

4. 发明申请

US20100061127A1 POWER SUPPLY DEVICE 有权
标题翻译：电源设备
公开(公告)号：US20100061127A1
公开(公告)日：2010-03-11
申请号：US12528406
申请日：2008-03-17
申请人： Masakazu Katou , Ryou Nakamoto , Keisuke Shimatani , Keiichi Yoshisaka , Masafumi Hashimoto
发明人： Masakazu Katou , Ryou Nakamoto , Keisuke Shimatani , Keiichi Yoshisaka , Masafumi Hashimoto
IPC分类号： H02M7/06
CPC分类号： H02M1/4208 , H02M7/2176 , Y02B70/126
摘要： The power supply device according to the present invention converts alternating-current power into direct-current power, and supplies the direct-current power to a load. Further, the power supply device includes a buffer, a control section, a rectifier circuit, a smoothing circuit, and a switch. After a predetermined zero cross point is detected, the control section uses in common, over a predetermined period of the alternating-current power, predetermined parameters retained in the buffer in calculating a timing at which a PAM interrupt pulse is generated.
摘要翻译：根据本发明的电源装置将交流电力转换为直流电力，并将直流电力提供给负载。此外，电源装置包括缓冲器，控制部，整流电路，平滑电路和开关。在检测到预定的零交叉点之后，控制部分在交流功率的预定周期内共同使用在产生PAM中断脉冲的定时中保留在缓冲器中的预定参数。

5. 发明申请

US20080032584A1 FABRICATION METHOD OF NITROGEN DISCHARGE LAMP 审中-公开
标题翻译：氮排放灯的制造方法
公开(公告)号：US20080032584A1
公开(公告)日：2008-02-07
申请号：US11777113
申请日：2007-07-12
申请人： Masafumi Hashimoto , Kenjirou Toryuu , Masafumi Jinno , Hideki Motomura , Tatsuya Matsuda , Tsuyoshi Sato
发明人： Masafumi Hashimoto , Kenjirou Toryuu , Masafumi Jinno , Hideki Motomura , Tatsuya Matsuda , Tsuyoshi Sato
IPC分类号： H01J9/38
CPC分类号： H01J61/16 , H01J9/38 , H01J9/385 , H01J9/395 , H01J61/76 , H01J65/046
摘要： A method of fabricating a nitrogen discharge lamp includes: a first evacuation step for evacuating the gas in a glass tube, a first gas introduction step for introducing nitrogen gas into the glass tube that has undergone the first evacuation step, a preliminary discharge step for producing electric discharge in the glass tube that has undergone the first gas introduction step, a second evacuation step for evacuating the gas inside the glass tube that has undergone the preliminary discharge step, and a second gas introduction step for introducing at least nitrogen gas and a noble gas into the glass tube that has undergone the second gas introduction step.
摘要翻译：一种氮气放电灯的制造方法，其特征在于，包括：将玻璃管内的气体排出的第一排气工序，将氮气导入到经过第一排气工序的玻璃管内的第一气体导入工序，在经过第一气体引入步骤的玻璃管中的放电，用于抽真空预处理步骤的玻璃管内的气体的第二抽空步骤，以及至少将氮气和贵金属引入的第二气体引入步骤气体进入经过第二气体引入步骤的玻璃管中。

6. 发明授权

US07186456B2 Easily slidable polyimide film and substrate employing it 有权
标题翻译：易于滑动的聚酰亚胺薄膜和使用它的基材
公开(公告)号：US07186456B2
公开(公告)日：2007-03-06
申请号：US10952219
申请日：2004-09-28
申请人： Masafumi Hashimoto , Toshiyuki Nishino , Toshihiko Anno , Hiroaki Yamaguchi
发明人： Masafumi Hashimoto , Toshiyuki Nishino , Toshihiko Anno , Hiroaki Yamaguchi
IPC分类号： B32B5/16 , B32B15/08 , B32B27/08
CPC分类号： B32B15/08 , B32B15/20 , B32B27/281 , B32B27/34 , C08J5/18 , C08J2379/08 , C08L79/08 , H05K1/0346 , H05K1/036 , H05K2201/0154 , H05K2201/0212 , Y10T428/25 , Y10T428/254 , Y10T428/26 , Y10T428/269 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： An easily slidable polyimide film having a polyimide surface layer comprising a polyimide which is thermoplastic and has a glass transition temperature of 190–450° C., wherein there are dispersed in the polyimide of the polyimide surface layer, in a proportion of approximately 0.5–10 mass % based on the polyimide of the polyimide surface layer, wholly aromatic polyimide particles made of a polyimide comprising at least 80 mass % of a pyromellitic acid component and a p-phenylenediamine component, and having a median size of 0.3–0.8 μm and a maximum size of no greater than 2 μm, in at least about 1 μm of the polyimide surface layer.
摘要翻译：一种容易滑动的聚酰亚胺膜，其具有聚酰亚胺表面层，该聚酰亚胺表面层包含热塑性聚酰亚胺，玻璃化转变温度为190-450℃，其中分散在聚酰亚胺表面层的聚酰亚胺中的比例约为0.5〜基于聚酰亚胺表面层的聚酰亚胺为10质量％，由包含至少80质量％的均苯四酸酸组分和对苯二胺组分的聚酰亚胺制成的全芳香族聚酰亚胺颗粒，中值粒径为0.3-0.8μm，最大尺寸不大于2μm，至少约1μm的聚酰亚胺表面层。

7. 发明授权

US06830992B1 Method for manufacturing a gallium nitride group compound semiconductor 失效
标题翻译：氮化镓基化合物半导体的制造方法
公开(公告)号：US06830992B1
公开(公告)日：2004-12-14
申请号：US09677781
申请日：2000-10-02
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L2120
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法，通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

8. 发明授权

US06472689B1 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06472689B1
公开(公告)日：2002-10-29
申请号：US09677787
申请日：2000-10-02
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法，通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

9. 发明授权

US06249012B1 Light emitting semiconductor device using gallium nitride group compound 失效
标题翻译：使用氮化镓基化合物的发光半导体器件
公开(公告)号：US06249012B1
公开(公告)日：2001-06-19
申请号：US08956950
申请日：1997-10-23
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10−1 &OHgr;cm to 8×10−3 &OHgr;cm or a carrier concentration ranging from 6×1016/cm3 to 3×1018/cm3.
摘要翻译：一种半导体器件，其具有掺杂硅的n型氮化镓层，其电阻范围为3×10 -1Ω〜8×10 -3Ω/ cm或载流子浓度为6×10 16 / cm 3〜3×10 18 / cm 3。

10. 发明授权

US5733796A Light-emitting semiconductor device using gallium nitride group compound 失效
标题翻译：使用氮化镓族化合物的发光半导体装置
公开(公告)号：US5733796A
公开(公告)日：1998-03-31
申请号：US556232
申请日：1995-11-09
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L33/00 , H01L33/02 , H01L33/32 , H01L21/20
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.
摘要翻译：使用具有含有低浓度p型杂质的绝缘氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的iL层的氮化镓系化合物半导体（Al x Ga 1-x N）的发光半导体装置。含有高浓度p型杂质的绝缘氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的iH层与iL层相邻。低载流子浓度的n型氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的n层与iL层相邻。 n型氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的n +层与n型杂质掺杂的高载流子浓度相邻。

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