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    • 1. 发明申请
    • Substrate for forming light-emitting layer, light emitter and light-emitting substance
    • 用于形成发光层,发光体和发光物质的基板
    • US20090250711A1
    • 2009-10-08
    • US11990924
    • 2006-08-24
    • Akira KiyamaRentaro MoriHiroya InaokaMasayuki IchiyanagiNobuhiko SawakiYoshio HondaYasuyuki Yanase
    • Akira KiyamaRentaro MoriHiroya InaokaMasayuki IchiyanagiNobuhiko SawakiYoshio HondaYasuyuki Yanase
    • H01L33/00
    • H01L33/007H01L33/16H01L33/24
    • To also intend the improvement of light-emitting efficiency by microcrystallizing light-emitting layer while utilizing vapor-phase growth method that is advantageous for improving crystal quality, and the like.4 for forming light-emitting layer comprises a substrate single-crystal substrate 1, and an oriented fine crystal layer 3 being formed on the single-crystal substrate 4. One of the crystal axes of respective crystals, which constitute the oriented microcrystal layer 3, is oriented in a specific direction with respect to the single-crystal substrate 1, and an average of the crystal grain diameters of the respective crystals, which constitute the oriented microcrystal layer 3, is adapted to being 1-1,000 nm. A light emitter 8 is equipped with an intermediate layer 5, a light-emitting layer 6 and a clad layer 7, which are formed on the oriented microcrystal layer 3 of this substrate 4 for forming light-emitting layer by means of vapor-phase growth method, respectively, and which comprise a nitride semiconductor. The light-emitting layer 6 is constituted of microcrystal grains whose average grain diameter is 1-1,000 nm.
    • 另外,为了提高发光效率,也可以通过利用气相生长法,通过微结晶发光层来提高发光效率,有利于提高晶体质量等。 用于形成发光层的图4包括基板单晶基板1和形成在单晶基板4上的取向微细晶体层3.构成取向微晶层3的各晶体的晶轴之一, 相对于单晶衬底1在特定方向上取向,并且构成取向微晶层3的各晶体的晶粒直径的平均值适应为1-1000nm。 发光体8配置有中间层5,发光层6和覆盖层7,其形成在该基板4的取向微晶层3上,用于通过气相生长形成发光层 方法,并且其包括氮化物半导体。 发光层6由平均粒径为1-1000nm的微晶粒构成。