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1. 发明授权

US08548019B2 GaN laser element 有权
标题翻译： GaN激光元件
公开(公告)号：US08548019B2
公开(公告)日：2013-10-01
申请号：US13438423
申请日：2012-04-03
申请人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito , Susumu Omi
发明人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito , Susumu Omi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译：在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条状结构，并且具有彼此相对的侧表面，在其宽度方向夹着条形波导。处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

2. 发明授权

US07990139B2 Two-axis geo-magnetic field sensor with elimination of eefect of external offset magnetic fields 有权
标题翻译：双轴地磁场传感器消除外部偏移磁场的影响
公开(公告)号：US07990139B2
公开(公告)日：2011-08-02
申请号：US12063393
申请日：2007-03-22
申请人： Yasunori Abe , Tomoki Ono , Yuji Nihei
发明人： Yasunori Abe , Tomoki Ono , Yuji Nihei
IPC分类号： G01R33/02
CPC分类号： G01C17/38 , G01R33/0005 , G01R33/09 , G01R33/096
摘要： Disclosed is a small-sized two-axis magnetic field sensor having a function to cause a magnetic field canceling an external offset magnetic field. The two-axis magnetic field sensor contains a plane coil disposed on a plane and four sets of magneto-resistance element pairs on a plane parallel to the plane coil. The plane coil includes at least two pairs of parallel conductors, and two magneto-resistance elements cross only a single conductor of the coil. A current for canceling the external offset magnetic field is determined in advance, and while a DC current that causes total magnetic fields of biasing magnetic fields plus a magnetic field for canceling the external offset magnetic field flows through the coil, intermediate potential outputs from the magneto-resistance element pairs are detected to measure a magnetic field direction, such as geo-magnetism.
摘要翻译：公开了具有使磁场消除外部偏移磁场的功能的小型二轴磁场传感器。双轴磁场传感器包括平面线圈和与平面线圈平行的平面上的四组磁阻元件对。平面线圈包括至少两对平行导体，并且两个磁阻元件仅与线圈的单个导体交叉。预先确定用于消除外部偏移磁场的电流，并且当引起偏置磁场的总磁场加上用于消除外部偏移磁场的磁场的直流电流流过线圈时，来自磁体的中间电位输出检测电阻元件对以测量诸如地磁的磁场方向。

3. 发明授权

US07199398B2 Nitride semiconductor light emitting device having electrode electrically separated into at least two regions 有权
标题翻译：氮化物半导体发光器件具有电分离成至少两个区域的电极
公开(公告)号：US07199398B2
公开(公告)日：2007-04-03
申请号：US10719739
申请日：2003-11-20
申请人： Tomoki Ono , Shigetoshi Ito , Toshiyuki Okumura , Hirokazu Mouri , Kyoko Matsuda , Toshiyuki Kawakami , Takeshi Kamikawa , Yoshihiko Tani
发明人： Tomoki Ono , Shigetoshi Ito , Toshiyuki Okumura , Hirokazu Mouri , Kyoko Matsuda , Toshiyuki Kawakami , Takeshi Kamikawa , Yoshihiko Tani
IPC分类号： H01L29/10 , H01L29/22 , H01L21/00 , H01S3/097
CPC分类号： H01L33/38 , H01L33/32 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/32341
摘要： A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.
摘要翻译：氮化物半导体发光器件至少包括衬底，由主要包含In和Ga的氮化物半导体形成的有源层，p电极和n电极。 p电极和n电极中的至少一个电分离成至少两个区域。

4. 发明授权

US06735231B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06735231B2
公开(公告)日：2004-05-11
申请号：US10037999
申请日：2001-11-09
申请人： Tomoki Ono , Shigetoshi Ito
发明人： Tomoki Ono , Shigetoshi Ito
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/3214 , H01S5/34333
摘要： A semiconductor laser device includes an active layer and a layer greater in bandgap energy than the active layer and having a stacked-layer structure mainly of gallium-nitride-based semiconductor for lasing. This device includes a gallium-nitride-based semiconductor layer substantially equal in bandgap to the active layer and containing at least one element selected from the group consisting of As, P and Sb for saturable absorption at a location apart from the active layer and inside the layer greater in bandgap energy than the active layer.
摘要翻译：半导体激光器件包括有源层和具有比有源层更大的带隙能量的层，并且具有主要由用于激光的氮化镓基半导体的堆叠层结构。该器件包括氮化镓基半导体层，该氮化镓基半导体层与有源层的带隙基本相等，并且在离开有源层的位置处包含从As，P和Sb中选择的至少一种元素用于可饱和吸收，层的能隙比活性层更大。

5. 发明授权

US06593595B2 Semiconductor light-emitting device and method for producing same 有权
公开(公告)号：US06593595B2
公开(公告)日：2003-07-15
申请号：US10075760
申请日：2002-02-12
申请人： Tomoki Ono , Shigetoshi Ito
发明人： Tomoki Ono , Shigetoshi Ito
IPC分类号： H01L3300
CPC分类号： H01S5/32341 , H01S5/0658 , H01S5/22
摘要： A semiconductor light-emitting device of the present invention includes: a substrate; a light-emitting layer provided above the substrate; and a saturable absorbing layer provided above the substrate, the saturable absorbing layer having characteristics in which saturation of light absorption occurs. The semiconductor light-emitting device has self-pulsation characteristics due to the saturable absorbing layer, and the semiconductor light-emitting device is characterized in that the saturable absorbing layer is doped with carbon.

6. 发明申请

US20120230357A1 GAN LASER ELEMENT 有权
标题翻译： GAN激光元素
公开(公告)号：US20120230357A1
公开(公告)日：2012-09-13
申请号：US13438423
申请日：2012-04-03
申请人： Toshiyuki KAWAKAMI , Tomoki ONO , Shigetoshi ITO , Susumu OMI
发明人： Toshiyuki KAWAKAMI , Tomoki ONO , Shigetoshi ITO , Susumu OMI
IPC分类号： H01S5/10
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译：在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条结构，并且具有彼此相对的侧表面，在其宽度方向夹着条形波导。处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

7. 发明授权

US08208214B2 Magnetic sensor device having near field light generation section employing a dielectric layer between a protruding metal layer and magnetic layer 有权
标题翻译：具有近场光产生部分的磁传感器装置，其采用突出的金属层和磁性层之间的电介质层
公开(公告)号：US08208214B2
公开(公告)日：2012-06-26
申请号：US12225901
申请日：2007-03-27
申请人： Noboru Iwata , Shintaro Miyanishi , Tomoki Ono , Yoshiteru Murakami
发明人： Noboru Iwata , Shintaro Miyanishi , Tomoki Ono , Yoshiteru Murakami
IPC分类号： G11B5/02
CPC分类号： G11B5/3903 , G11B5/314 , G11B2005/0005 , G11B2005/0021
摘要： A magnetic sensing section is constituted by a magneto-resistive device in which a fixed magnetization layer, a non-magnetic layer, and a magnetization-free layer are deposited in that order on a first buffer layer that is deposited on a magnetic layer. A second buffer layer sandwiches the magnetic sensing section, and a biasing layer which covers right and left sides of the magnetic sensing section. The second buffer layer is deposited on the magnetic layer with a nonconductor layer interposed therebetween. A near field light generation section constituted by a second magnetic layer, a dielectric layer, and a metal layer is formed on a surface of the second buffer layer not adjacent to the nonconductor layer. The resultant magnetic sensor device can efficiently perform photo-assisted reproduction of information from a magnetic recording medium using a magnetic reproduction head or a magnetic reproducer.
摘要翻译：磁感测部分由磁阻装置构成，其中在沉积在磁性层上的第一缓冲层上依次沉积固定磁化层，非磁性层和无磁化层。第二缓冲层夹着磁感测部，以及覆盖磁感应部的右侧和左侧的偏置层。第二缓冲层沉积在磁性层上，其间插入非导体层。在不与非导体层相邻的第二缓冲层的表面上形成由第二磁性层，电介质层和金属层构成的近场光产生部。所得到的磁传感器装置可以使用磁再现头或磁再现器有效地执行来自磁记录介质的信息的光辅助再现。

8. 发明授权

US08170076B2 GaN laser element 有权
标题翻译： GaN激光元件
公开(公告)号：US08170076B2
公开(公告)日：2012-05-01
申请号：US12982231
申请日：2010-12-30
申请人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito
发明人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译：在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条结构，并且具有彼此相对的侧表面，在其宽度方向夹着条形波导。处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

9. 发明授权

US08134894B2 Surface plasmon polariton direction change device, read/write head, laser-assisted magnetic recording apparatus, and optical circuit 失效
标题翻译：表面等离子体极化子方向改变装置，读/写头，激光辅助磁记录装置和光电路
公开(公告)号：US08134894B2
公开(公告)日：2012-03-13
申请号：US12445718
申请日：2007-10-03
申请人： Tazuko Kitazawa , Tomoki Ono
发明人： Tazuko Kitazawa , Tomoki Ono
IPC分类号： G11B11/00 , G02B6/10
CPC分类号： G11B5/314 , B82Y10/00 , B82Y20/00 , B82Y25/00 , G11B7/1387 , G11B11/10536 , G11B2005/0002 , G11B2005/0021
摘要： This invention provides a surface plasmon polariton direction change device (1) for changing a propagation direction of a surface plasmon polariton (5). The surface plasmon polariton direction change device (1) includes a metal film support member (2), and a first metal film (3) and a second metal film (4) which are provided on a predetermined surface of the metal film support member (2), are provided adjacently to each other, and are different from each other in effective refractive index. The surface plasmon polariton direction change device (1) is characterized in that the first metal film (3) and the second metal film (4) are provided so that, in at least a part of a boundary between the first metal film (3) and the second metal film (4), an angle θ formed between (i) a line perpendicular to the boundary and (ii) the propagation direction of the surface plasmon polariton (5) satisfies 0°
摘要翻译：本发明提供一种用于改变表面等离子体激元（5）的传播方向的表面等离子体激元方向改变装置（1）。表面等离子体激元方向改变装置（1）包括金属膜支撑构件（2）和设置在金属膜支撑构件的预定表面上的第一金属膜（3）和第二金属膜（4） 2）彼此相邻地设置，并且在有效折射率方面彼此不同。表面等离子体激元方向改变装置（1）的特征在于，第一金属膜（3）和第二金属膜（4）的设置使得在第一金属膜（3）和第二金属膜和第二金属膜（4），角度和角度; 形成在（i）垂直于边界的线和（ii）表面等离子体激元（5）的传播方向满足0°<90°或-90°<θ; <0°，和（i）第一金属膜（3）的与金属膜支撑构件（2）接触的表面相对的表面和（ii）第二金属膜（4）的与与金属膜支撑构件（2）彼此齐平。

10. 发明申请

US20110163739A1 SELF-PINNED SPIN VALVE MAGNETORESISTANCE EFFECT FILM AND MAGNETIC SENSOR USING THE SAME, AND ROTATION ANGLE DETECTION DEVICE 有权
标题翻译：自锁式旋转磁体磁阻效应膜和使用其的磁性传感器，以及旋转角度检测装置
公开(公告)号：US20110163739A1
公开(公告)日：2011-07-07
申请号：US13057076
申请日：2009-08-10
申请人： Tomoki Ono , Yasunori Abe , Fumio Shirasaki
发明人： Tomoki Ono , Yasunori Abe , Fumio Shirasaki
IPC分类号： G01B7/30
CPC分类号： G01R33/093 , B82Y25/00 , H01F10/325 , H01F10/3254 , H01F10/3295 , H01L43/08 , Y10T428/1121 , Y10T428/1129
摘要： Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.
摘要翻译：提供了一种自动钉扎自旋阀磁阻效应膜，使用其的磁性传感器和旋转角度检测装置。自锁自旋阀磁阻效应膜在被钉扎层中具有强耦合磁场，电阻变化的小的减小和优异的磁场阻力，而不会降低第一铁磁层中的矫顽力，这是固定的即使暴露在强大的外部磁场下，也可以在膜中进行。通过在接地层和被钉扎层之间插入非磁性层以形成自旋阀磁电阻效应膜，具有优异的抗磁场性的自针式自旋阀磁阻效应膜，使用该磁性的磁性传感器和旋转得到角度检测装置。

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