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21. 发明授权

US5455138A Process for forming deposited film for light-receiving member, light-receiving member produced by the process, deposited film forming apparatus, and method for cleaning deposited film forming apparatus 失效
标题翻译：用于形成光接收部件的沉积膜的方法，通过该工艺制造的光接收部件，沉积膜形成装置和用于清洁沉积膜形成装置的方法
公开(公告)号：US5455138A
公开(公告)日：1995-10-03
申请号：US138962
申请日：1993-10-21
申请人： Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama , Koji Hitsuishi , Satoshi Kojima , Hirokazu Ohtoshi , Masaaki Yamamura
发明人： Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama , Koji Hitsuishi , Satoshi Kojima , Hirokazu Ohtoshi , Masaaki Yamamura
IPC分类号： C23C16/00 , C23C16/44 , C23C16/505 , C23C16/509 , G03G5/08 , G03G5/082
CPC分类号： C23C16/4405 , C23C16/505 , C23C16/509 , G03G5/08214 , G03G5/08221 , G03G5/08235 , G03G5/08278
摘要： A process for producing a light-receiving member comprising a substrate and provided thereon a blocking layer and a photoconductive layer each comprised of a non-monocrystalline material is disclosed in which the blocking layer is comprised of a non-monocrystalline material comprising silicon atoms as matrix and at least one kind of atoms selected from the group consisting of carbon atoms, oxygen atoms and nitrogen atoms, the process comprising forming the blocking layer and the photoconductive layer by plasma CVD using glow discharge decomposition of a starting material gas caused by applying to the starting material gas an electromagnetic wave with a frequency of from 20 MHz to 450 MHz.
摘要翻译：公开了一种制造光接收部件的方法，该光接收部件包括基板并且在其上设置有由非单晶材料构成的阻挡层和光电导层，其中阻挡层由包含硅原子作为基质的非单晶材料构成和选自碳原子，氧原子和氮原子的至少一种原子，所述方法包括通过等离子体CVD形成阻挡层和光导电层，其中使用由施加到起始原料气体具有频率为20MHz至450MHz的电磁波。

22. 发明授权

US5817181A Process for forming deposited film for light-receiving member, light-received member produced by the process deposited film forming apparatus, and method for cleaning deposited film forming apparatus 失效
标题翻译：用于形成光接收部件的沉积膜的方法，由该沉积成膜装置制造的光接收部件以及用于清除沉积膜形成装置的方法
公开(公告)号：US5817181A
公开(公告)日：1998-10-06
申请号：US506347
申请日：1995-07-24
申请人： Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama , Koji Hitsuishi , Satoshi Kojima , Hirokazu Ohtoshi , Masaaki Yamamura
发明人： Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama , Koji Hitsuishi , Satoshi Kojima , Hirokazu Ohtoshi , Masaaki Yamamura
IPC分类号： C23C16/00 , C23C16/44 , C23C16/505 , C23C16/509 , G03G5/08 , G03G5/082 , B08B7/00
CPC分类号： C23C16/4405 , C23C16/505 , C23C16/509 , G03G5/08214 , G03G5/08221 , G03G5/08235 , G03G5/08278
摘要： A process for producing a light-receiving member comprising a substrate and provided thereon a blocking layer and a photoconductive layer each comprised of a non-monocrystalline material is disclosed in which the blocking layer is comprised of a non-monocrystalline material comprising silicon atoms as matrix and at least one kind of atoms selected from the group consisting of carbon atoms, oxygen atoms and nitrogen atoms, the process comprising forming the blocking layer and the photoconductive layer by plasma CVD using glow discharge decomposition of a starting material gas caused by applying to the starting material gas an electromagnetic wave with a frequency of from 20 MHz to 450 MHz.
摘要翻译：公开了一种制造光接收部件的方法，该光接收部件包括基板并且在其上设置有由非单晶材料构成的阻挡层和光电导层，其中阻挡层由包含硅原子作为基质的非单晶材料构成和选自碳原子，氧原子和氮原子的至少一种原子，所述方法包括通过等离子体CVD形成阻挡层和光导电层，其中使用由施加到起始原料气体具有频率为20MHz至450MHz的电磁波。

23. 发明授权

US5582944A Light receiving member 失效
标题翻译：光接收元件
公开(公告)号：US5582944A
公开(公告)日：1996-12-10
申请号：US264234
申请日：1994-06-22
申请人： Masaaki Yamamura , Toshiyasu Shirasuna , Junichiro Hashizume , Kazuyoshi Akiyama , Shigeru Shirai
发明人： Masaaki Yamamura , Toshiyasu Shirasuna , Junichiro Hashizume , Kazuyoshi Akiyama , Shigeru Shirai
IPC分类号： G03G5/082
CPC分类号： G03G5/08228
摘要： An electrophotographic light-receiving member comprises a conductive substrate and a light-receiving layer having a photoconductive layer and a surface layer which are successively layered on the conductive substrate, wherein;the photoconductive layer is comprised of a non-monocrystalline material mainly composed of a silicon atom and containing at least a carbon atom, a hydrogen atom and a fluorine atom;the surface layer is mainly composed of a silicon atom and contains a carbon atom, a hydrogen atom and a halogen atom;the carbon atom in the photoconductive layer is in a non-uniform content in the layer thickness direction and in a higher content on the side of the conductive substrate and in a lower content on the side of the surface layer at every point in the layer thickness direction, and is in a content of from 0.5 atomic % to 50 atomic % at, or in the vicinity of, its surface on the side of the conductive substrate and substantially 0% R at, or in the vicinity of, its surface on the side of the surface layer;the fluorine atom in the photoconductive layer is in a content of not more than 95 atomic ppm; andthe hydrogen atom in the photoconductive layer is in a content of from 1 to 40 atomic %.
摘要翻译：电子照相光接收元件包括导电基底和具有光导电层和表面层的光接收层，其依次层叠在导电基底上，其中：光电导层由主要由硅原子组成且至少含有碳原子，氢原子和氟原子的非单晶材料构成; 表面层主要由硅原子组成，含有碳原子，氢原子和卤素原子; 光电导层中的碳原子在层厚度方向上具有不均匀的含量，并且在导电基底侧具有较高的含量，并且在层厚度的每个点处在表层的一侧的较低含量方向，并且在其导电基底侧的表面或其附近的含量为0.5原子％至50原子％，并且在其表面上基本上为0％R，或其表面附近表面层的一侧; 光电导层中的氟原子的含量不超过95原子ppm; 光电导层中的氢原子的含量为1〜40原子％。

24. 发明授权

US5407768A Light-receiving member 失效
标题翻译：光接收元件
公开(公告)号：US5407768A
公开(公告)日：1995-04-18
申请号：US051358
申请日：1993-04-23
申请人： Kazuyoshi Akiyama , Masaaki Yamamura , Ryuji Okamura , Koji Hitsuishi
发明人： Kazuyoshi Akiyama , Masaaki Yamamura , Ryuji Okamura , Koji Hitsuishi
IPC分类号： G03G5/08 , G03G5/082 , G03G5/14
CPC分类号： G03G5/08221 , G03G5/08235 , G03G5/08285
摘要： An electrophotographic light-receiving member comprising a conductive substrate 101 and laminated thereto a non-monocrystalline material photoconductive layer 102 and a surface layer 103. The photoconductive layer 102 is mainly composed of silicon atoms and contains at least carbon atoms and hydrogen atoms. The percentage of carbon atoms having a carbon-carbon bond in the photoconductive layer is controlled to be not more than 60% based on the whole carbon atoms contained therein, and, in an instance in which a blocking layer 104 is provided between the conductive substrate 101 and the photoconductive layer 102, the percentage of carbon atoms having a carbon-carbon bond in the blocking layer is also controlled. This makes it possible to prevent clusters of carbon atoms from being formed in the photoconductive layer or blocking layer. Making the carbon atoms have a uniform distribution in the silicon film enables improvement in electrophotographic performances such as charge performance, sensitivity, residual potential, ghost-free properties, etc.
摘要翻译：一种电子照相光接收元件，包括导电基底101并且层压在非单晶材料光电导层102和表面层103上。光电导层102主要由硅原子组成并且至少含有碳原子和氢原子。光电导层中具有碳 - 碳键的碳原子百分数被控制在不超过其含有的全部碳原子的60％以下，并且在导电性基材中设置有阻挡层104的情况下 101和光电导层102，也控制了在阻挡层中具有碳 - 碳键的碳原子的百分比。这使得可以防止在光电导层或阻挡层中形成碳原子簇。使碳原子在硅膜中具有均匀分布，可以改善电荷性能，如充电性能，灵敏度，残留电位，无重影性能等。

25. 发明授权

US06767593B2 Apparatus and process for forming a deposited film 失效
公开(公告)号：US06767593B2
公开(公告)日：2004-07-27
申请号：US10691519
申请日：2003-10-24
申请人： Kazuyoshi Akiyama
发明人： Kazuyoshi Akiyama
IPC分类号： H05H146
CPC分类号： H01J37/32348 , H01J37/32082 , H05H1/46
摘要： A deposited film-forming apparatus comprising a reaction chamber capable of being vacuumed in which glow discharge is caused by means of a high frequency power supplied by a high frequency power introduction means to form a deposited film on a substrate positioned in said reaction chamber, wherein said high frequency power introduction means comprises an insulating material as a base constituent and has a region isolated from a glow discharge zone of said reaction chamber by means of said insulating material wherein an electrode comprising an electrically conductive metallic material having a thickness capable of sufficiently transmitting said high frequency power is disposed in said region such that it is contacted with said insulating material in a state with no clearance. A deposited film-forming process using said deposited film-forming apparatus.

26. 发明授权

US06712019B2 Film forming apparatus having electrically insulated element that introduces power of 20-450MHz 失效
标题翻译：具有导电功率为20-450MHz的电绝缘元件的成膜装置
公开(公告)号：US06712019B2
公开(公告)日：2004-03-30
申请号：US08797829
申请日：1997-02-10
申请人： Kazuyoshi Akiyama
发明人： Kazuyoshi Akiyama
IPC分类号： C23C16503
CPC分类号： H01J37/32348 , H01J37/32082 , H05H1/46
摘要： A deposited film-forming apparatus comprising a reaction chamber capable of being vacuumed in which glow discharge is caused by means of a high frequency power supplied by a high frequency power introduction means to form a deposited film on a substrate positioned in said reaction chamber, wherein said high frequency power introduction means comprises an insulating material as a base constituent and has a region isolated from a glow discharge zone of said reaction chamber by means of said insulating material wherein an electrode comprising an electrically conductive metallic material having a thickness capable of sufficiently transmitting said high frequency power is disposed in said region such that it is contacted with said insulating material in a state with no clearance. A deposited film-forming process using said deposited film-forming apparatus.
摘要翻译：一种沉积膜形成装置，包括能够被抽真空的反应室，其中通过由高频功率引入装置提供的高频功率引起辉光放电，以在位于所述反应室中的基板上形成沉积膜，其中所述高频功率引入装置包括作为基本成分的绝缘材料，并且具有通过所述绝缘材料与所述反应室的辉光放电区隔离的区域，其中电极包括具有能够充分发射的厚度的导电金属材料所述高频功率设置在所述区域中，使得其在没有间隙的状态下与所述绝缘材料接触。使用所述沉积膜形成装置的沉积膜形成工艺。

27. 发明授权

US08440377B2 Electrophotographic photosensitive member and electrophotographic apparatus 有权
标题翻译：电子照相感光构件和电子照相设备
公开(公告)号：US08440377B2
公开(公告)日：2013-05-14
申请号：US12949053
申请日：2010-11-18
申请人： Tomohito Ozawa , Motoya Yamada , Kazuyoshi Akiyama , Daisuke Tazawa
发明人： Tomohito Ozawa , Motoya Yamada , Kazuyoshi Akiyama , Daisuke Tazawa
IPC分类号： G03G5/043
CPC分类号： G03G5/0433 , G03G5/08228
摘要： An electrophotographic photosensitive member includes a substrate, a photoconductive layer, an intermediate layer, and a surface layer sequentially formed. The intermediate layer contains silicon, carbon and hydrogen, and a distribution of a hydrogen ratio, which is a ratio of the number of hydrogen atoms to the number of silicon, carbon and hydrogen atoms, in the intermediate layer has a maximum region. A largest hydrogen atomic ratio in the intermediate layer is larger than a hydrogen atomic ratio in the surface layer, and the hydrogen atomic ratio in the surface layer is 0.30 to 0.45. A distribution of a carbon atomic ratio, which is a ratio of the number of carbon atoms to the number of silicon and carbon atoms, in the intermediate layer has a maximum and a minimum region. A carbon atomic ratio in the maximum region is 0.53 to 0.63, a carbon atomic ratio in the minimum region is 0.47 or more, and the maximum hydrogen region in the intermediate layer is partially superimposed on the minimum carbon region.
摘要翻译：电子照相感光构件包括基底，光电导层，中间层和顺序形成的表面层。中间层含有硅，碳和氢，中间层中氢原子数与硅原子数，碳原子数和氢原子数之比的氢比分布最大。中间层中最大的氢原子比大于表面层中的氢原子比，表面层中的氢原子比为0.30〜0.45。作为中间层的碳原子数与硅原子数与碳原子数的比例的碳原子比的分布具有最大值和最小值。最大区域的碳原子比为0.53〜0.63，最小区域的碳原子比为0.47以上，中间层的最大氢区域部分地叠加在最小碳区域上。

28. 发明申请

US20110129776A1 IMAGE-FORMING METHOD 有权
标题翻译：图像形成方法
公开(公告)号：US20110129776A1
公开(公告)日：2011-06-02
申请号：US13056734
申请日：2009-12-16
申请人： Kazuyoshi Akiyama , Shigenori Ueda , Daisuke Tazawa , Tomohito Ozawa
发明人： Kazuyoshi Akiyama , Shigenori Ueda , Daisuke Tazawa , Tomohito Ozawa
IPC分类号： G03G13/22
CPC分类号： G03G5/14704 , G03G5/08214 , G03G5/08221 , G03G5/08285 , G03G13/045
摘要： An image-forming method is provided which enable high-quality images to be formed over a long time period. In the image-forming method, an electrophotographic photosensitive member is used having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is 6.60×1022 atoms/cm3 or more, and the peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light.
摘要翻译：提供了能够在长时间内形成高质量图像的图像形成方法。在图像形成方法中，使用电子照相感光构件，其具有由氢化非晶碳化硅形成的表面层，其中碳原子数与硅原子数与碳原子数之和的比率在表面层中为0.61以上且0.75以下，表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×1022原子/ cm 3以上，峰值波长的预曝光光比图像曝光光的峰值波长短。

29. 发明申请

US20100159122A1 DEPOSITION FILM FORMING APPARATUS, DEPOSITION FILM FORMING METHOD AND ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER MANUFACTURING METHOD 审中-公开
标题翻译：沉积膜形成装置，沉积膜形成方法和电泳图像感光构件制造方法
公开(公告)号：US20100159122A1
公开(公告)日：2010-06-24
申请号：US12627125
申请日：2009-11-30
申请人： Kazuto Hosoi , Kazuyoshi Akiyama , Yukihiro Abe , Motoya Yamada
发明人： Kazuto Hosoi , Kazuyoshi Akiyama , Yukihiro Abe , Motoya Yamada
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： G03G5/04 , C23C16/4405 , C23C16/4412 , C23C16/45591
摘要： The present invention provides a deposition film forming apparatus including a reaction container, an exhaust device and an exhaust gas flow path for causing a material gas to flow from the reaction container to the exhaust device, wherein the exhaust gas flow path includes a portion whose cross section expands with a step with respect to a direction in which the material gas flows and the deposition film forming apparatus further includes a cleaning gas flow device for causing the cleaning gas to directly flow into a region closer to the exhaust device side than the step of the exhaust gas flow path, a deposition film forming method using the deposition film forming apparatus and a method of manufacturing an electrophotographic photosensitive member using the deposition film forming method.
摘要翻译：本发明提供了一种沉积膜形成装置，其包括反应容器，排气装置和用于使材料气体从反应容器流向排气装置的排气流路，其中废气流路包括交叉截面相对于材料气体流动的方向以阶梯方式膨胀，并且沉积膜形成装置还包括清洁气体流动装置，用于使清洁气体直接流入比排气装置侧更靠近排气装置侧的区域废气流路，使用沉积膜形成装置的沉积膜形成方法和使用沉积膜形成方法制造电子照相感光构件的方法。

30. 发明申请

US20100021836A1 ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS 有权
标题翻译：电子照相感光元件和电子照相设备
公开(公告)号：US20100021836A1
公开(公告)日：2010-01-28
申请号：US12505692
申请日：2009-07-20
申请人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura
发明人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura
IPC分类号： G03G15/00
CPC分类号： G03G13/22 , G03G5/08235 , G03G5/144 , G03G5/14704
摘要： In an electrophotographic photosensitive member having a photoconductive layer and, provided on the photoconductive layer, a surface layer constituted of a hydrogenated amorphous silicon carbide, the ratio of the number of atoms of carbon atoms (C) to the sum of the number of atoms of silicon atoms (Si) and number of atoms of carbon atoms (C), C/(Si+C), in the surface layer is from or more to 0.75 or less, and the sum of atom density of the silicon atoms and atom density of the carbon atoms in the surface layer is 6.60×1022 atom/cm3 or more.
摘要翻译：在具有光电导层并且在光电导层上设置由氢化非晶碳化硅构成的表面层的电子照相感光构件中，碳原子数（C）与原子数之和的比例表面层中的硅原子（Si）和碳原子数（C），C /（Si + C）等于或大于0.75以下，硅原子的原子密度和原子密度之和的表面层中的碳原子数为6.60×10 22原子/ cm 3以上。

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