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1. 发明授权

US06482668B2 Process for producing photovoltaic device 失效
标题翻译：光电器件生产工艺
公开(公告)号：US06482668B2
公开(公告)日：2002-11-19
申请号：US09260044
申请日：1999-03-02
申请人： Naoto Okada , Masahiro Kanai , Hirokazu Ohtoshi , Tadashi Hori
发明人： Naoto Okada , Masahiro Kanai , Hirokazu Ohtoshi , Tadashi Hori
IPC分类号： H01L2100
CPC分类号： H01L31/1824 , H01L31/1816 , Y02E10/545 , Y02P70/521
摘要： In the step of forming a microcrystalline i-type semiconductor layer by high-frequency plasma CVD, wherein an area of the parallel-plate electrode is represented by S; a width of the discharge space in its direction perpendicular to the transport direction of the belt-like substrate, by Ws; a width of a region formed by the parallel-plate electrode together with its surrounding insulating region, in its direction perpendicular to the transport direction of the belt-like substrate, by Wc; a width of the belt-like substrate in the direction perpendicular to its transport, by Wk; a distance between the parallel-plate electrode and the belt-like substrate, by h; a power density at which crystal fraction begins to saturate at predetermined substrate temperature, material gas flow rate and pressure, by Pd; and a high-frequency power, by P, 2h/(Ws−Wc)≧2.5, (Ws/h)×2(Ws−Wk)/[4h+(Ws−Wc) ]≧10, and P≧(10/8)×Pd×S. A microcrystalline semiconductor layer having lower characteristics distribution in the width direction of a belt-like substrate result, and photovoltaic devices having uniform photoelectric conversion efficiency can be mass-produced by a roll-to-roll system.
摘要翻译：在通过高频等离子体CVD形成微晶i型半导体层的步骤中，平行板电极的面积由S表示; 放电空间在与带状衬底的输送方向垂直的方向上的宽度Ws; 由平行板电极与其周围的绝缘区域在垂直于带状衬底的输送方向的方向上形成的区域的宽度为Wc; 带状基板在与其运输方向垂直的方向上的宽度W k; 平行板电极和带状衬底之间的距离h; 通过Pd在晶体部分在预定的衬底温度，材料气体流速和压力下开始饱和的功率密度; 和高频功率，通过P，在带状衬底的宽度方向上具有较低特性分布的微晶半导体层，并且可以通过卷对卷大规模生产具有均匀光电转换效率的光电器件系统。

2. 发明授权

US06365308B1 Light receiving member for electrophotography 失效
标题翻译：光电接收元件
公开(公告)号：US06365308B1
公开(公告)日：2002-04-02
申请号：US08967208
申请日：1997-10-29
申请人： Satoshi Kojima , Keishi Saito , Hirokazu Ohtoshi , Masafumi Sano , Junichiro Hashizume , Yasuyoshi Takai , Ryo Hayashi , Masahiko Tonogaki
发明人： Satoshi Kojima , Keishi Saito , Hirokazu Ohtoshi , Masafumi Sano , Junichiro Hashizume , Yasuyoshi Takai , Ryo Hayashi , Masahiko Tonogaki
IPC分类号： G03G5043
CPC分类号： G03G5/08285 , G03G5/0433 , G03G5/08214 , G03G5/08221 , G03G5/14704
摘要： In order to maintain excellent electrical, optical and photoconductive characteristics and to significantly improve the durability under adverse environments, a light receiving member for electrophotography according to the present invention comprises in sequence: a supporting member and a light receiving layer; said light receiving layer comprising in sequence at least a photoconductive layer and a surface layer thereon, said photoconductive layer comprising a non-single-crystal material containing silicon atoms as a matrix, and said surface layer comprising an amorphous material containing silicon atoms and carbon atoms as a matrix, wherein the carbon atoms are at least diamond-bonded and graphite-bonded, and wherein from 2% to 30% by number of the carbon atoms are graphite-bonded.
摘要翻译：为了保持优异的电气，光学和光导特性并显着改善不利环境下的耐久性，根据本发明的用于电子照相的光接收元件依次包括支撑元件和光接收层; 所述光接收层依次包括至少一个光电导层和其上的表面层，所述光电导层包括含有硅原子作为基质的非单晶材料，所述表面层包含含有硅原子和碳原子的无定形材料作为基质，其中碳原子至少是金刚石键合和石墨键合的，并且其中2〜30％的碳原子是石墨键合的。

3. 发明授权

US06153823A Photoelectric conversion element having a surface member or a protection member and building material using the same 失效
标题翻译：具有表面构件或保护构件的光电转换元件和使用其的建筑材料
公开(公告)号：US06153823A
公开(公告)日：2000-11-28
申请号：US37825
申请日：1998-03-11
申请人： Atsushi Shiozaki , Keishi Saito , Masahiro Kanai , Hirokazu Ohtoshi , Naoto Okada
发明人： Atsushi Shiozaki , Keishi Saito , Masahiro Kanai , Hirokazu Ohtoshi , Naoto Okada
IPC分类号： H01L31/04 , H01L31/048 , H01L31/076 , H01L31/20 , H02J7/35 , H01L25/00
CPC分类号： H02J7/35 , B32B17/04 , B32B17/10788 , H01L31/048 , H01L31/076 , Y02B10/12 , Y02B10/14 , Y02E10/548 , Y10S136/293
摘要： A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.
摘要翻译：提供一种光电转换元件，其包括基板，形成在基板上的非单晶半导体的多个半导体结以及覆盖半导体结的表面材料。半导体结具有彼此不同的各自的吸收光谱，并且各自的光劣化率彼此不同。当没有表面材料存在时，由劣化率最小的半导体结产生的光电流大于具有最大劣化率的半导体结的光电流，并且当存在时，表面材料在相当于一部分的范围内吸收光具有最小劣化率的半导体结的吸收光谱，使得由劣化率最小的半导体结产生的光电流变得小于具有最大劣化率的半导体结的光电流。

4. 发明授权

US5516611A Light-receiving member and methods of producing light-receiving member 失效
标题翻译：光接收部件和光接收部件的制造方法
公开(公告)号：US5516611A
公开(公告)日：1996-05-14
申请号：US224730
申请日：1994-04-08
申请人： Satoshi Kojima , Hirokazu Ohtoshi , Hitoshi Murayama
发明人： Satoshi Kojima , Hirokazu Ohtoshi , Hitoshi Murayama
IPC分类号： G03G5/08 , G03G5/082 , H01L31/0376 , G03G5/085
CPC分类号： H01L31/03762 , G03G5/08228 , Y02E10/548
摘要： In order to improve characteristics of a light-receiving member for electrophotography having a photoconductive layer comprising an amorphous silicon material and implement a method for facilitating designing of a layer structure, the present invention provides a light-receiving member which is formed by depositing in sequence a photoconductive layer which comprises a non-monocrystalline material comprising silicon atoms as a main element and a surface layer on a conductive substrate, wherein the photoconductive layer comprises at least hydrogenated amorphous silicon which contains at least carbon atoms and boron atoms and the boron atom content in the photoconductive layer in a direction of film thickness is varied in a correlation of exponential functions with respect to the carbon atom content in the photoconductive layer in the direction of film thickness, and a method for producing the light-receiving member by forming a layer while controlling a charge of a starting gas for the boron atoms in the correlation of exponential functions with respect to a charge of a starting gas for the carbon atoms.
摘要翻译：为了改善具有包含非晶硅材料的光电导层的电子照相用光接收元件的特性，并且实现了便于设计层结构的方法，本发明提供了一种光接收元件，其通过依次沉积形成光电导层，其包含包含硅原子作为主要元素的非单晶材料和导电基底上的表面层，其中光电导层至少包含含至少碳原子和硼原子的氢化非晶硅，硼原子含量在膜厚方向的光导电层中，指数函数相对于光电导层中的碳原子含量在膜厚方向上的相关性变化，以及通过形成层的光接收部件的制造方法同时控制b的起始气体的电荷指数函数相对于碳原子的起始气体的电荷相关的原子。

5. 发明授权

US5232507A Apparatus for forming deposited films with microwave plasma CVD method 失效
标题翻译：用微波等离子体CVD法形成沉积膜的装置
公开(公告)号：US5232507A
公开(公告)日：1993-08-03
申请号：US876472
申请日：1992-04-30
申请人： Hirokazu Ohtoshi , Tetsuya Takei , Ryuji Okamura , Yasuyoshi Takai
发明人： Hirokazu Ohtoshi , Tetsuya Takei , Ryuji Okamura , Yasuyoshi Takai
IPC分类号： C08J7/00 , C23C16/50 , C23C16/511 , H01J37/32 , H01L21/205
CPC分类号： H01J37/32238 , C23C16/511 , H01J37/32743 , H01J2237/3321
摘要： An apparatus for forming deposited films with a microwave plasma CVD method comprises a reactor vessel within which the pressure can be reduced, means for supplying a source gas into the reactor vessel, means for introducing the microwave into the reactor vessel and exciting a microwave discharge plasma, and means for holding a plurality of substrates so as to enclose a discharge space formed within the reactor vessel, and is characterized by comprising a holding member holding together dielectric windows for introducing the microwave into the reactor vessel, substrates for the formation of deposited films disposed so as to surround the dielectric windows and a cooling device for cooling the dielectric windows, and conveying means for conveying the holding member into and out of the reactor vessel in a vacuum atmosphere.
摘要翻译：用微波等离子体CVD方法形成沉积膜的装置包括一个反应器容器，在该反应容器中压力可以减小，用于将源气体供应到反应器容器中的装置，用于将微波引入反应器容器并激发微波放电等离子体的装置，以及用于保持多个基板以包围形成在反应容器内的放电空间的装置，其特征在于包括：保持构件，其保持用于将微波引入反应器容器的电介质窗口，用于形成沉积膜的基板设置成围绕电介质窗口和用于冷却电介质窗口的冷却装置，以及用于在真空环境中将保持构件输入和流出反应容器的输送装置。

6. 发明授权

US06602347B1 Apparatus and method for processing a substrate 失效
标题翻译：用于处理衬底的装置和方法
公开(公告)号：US06602347B1
公开(公告)日：2003-08-05
申请号：US09439609
申请日：1999-11-12
申请人： Hiroshi Shimoda , Masahiro Kanai , Hirokazu Ohtoshi , Tadashi Hori , Koichiro Moriyama
发明人： Hiroshi Shimoda , Masahiro Kanai , Hirokazu Ohtoshi , Tadashi Hori , Koichiro Moriyama
IPC分类号： C23C1600
CPC分类号： C23C16/545 , G21K5/10 , H01L31/03921 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A substrate-processing apparatus includes a substrate delivery chamber, a substrate-processing chamber and a substrate takeup chamber, wherein in the substrate delivery chamber, a web substrate and an interleaf are delivered from a delivery bobbin including the web substrate and the interleaf alternately wound while the web substrate delivered is transported into the substrate-processing chamber to process the web substrate therein and the interleaf delivered is wound on an interleaf takeup bobbin. In the substrate takeup chamber, the web substrate transported from the substrate-processing chamber and an interleaf delivered from an interleaf delivery bobbin are alternately wound in a roll form on a substrate takeup bobbin. The substrate-processing apparatus is provided with a mechanism for detecting transport abnormality of the interleaf either in the substrate delivery chamber or in the substrate takeup chamber.
摘要翻译：基板处理装置包括基板输送室，基板处理室和基板卷取室，其中，在基板输送室中，从基板和交错卷绕的输送线轴输送卷筒纸基板和夹板而输送的网状基材被输送到基材处理室中以在其中处理网状物基材，并且输送的中间层被卷绕在中间卷取线轴上。在基板卷取室中，从基板处理室输送的网状基板和从中间输送线轴输送的夹层交替地卷绕在基板卷绕筒管上。衬底处理装置设置有用于检测衬底输送室或衬底收容室中的插入物的运输异常的机构。

7. 发明授权

US06576061B1 Apparatus and method for processing a substrate 有权
标题翻译：用于处理衬底的装置和方法
公开(公告)号：US06576061B1
公开(公告)日：2003-06-10
申请号：US09469797
申请日：1999-12-22
申请人： Koichiro Moriyama , Masahiro Kanai , Hirokazu Ohtoshi , Tadashi Hori , Naoto Okada , Hiroshi Shimoda , Hiroyuki Ozaki
发明人： Koichiro Moriyama , Masahiro Kanai , Hirokazu Ohtoshi , Tadashi Hori , Naoto Okada , Hiroshi Shimoda , Hiroyuki Ozaki
IPC分类号： H01L2100
CPC分类号： H01L21/67173 , H01L21/67236 , H01L21/67253 , H01L21/6776
摘要： A substrate-processing method comprising transporting a substrate to pass through a plurality of processing spaces communicated with each other while processing said substrate in each processing space, characterized in that based on an inner pressure of (a) one of said plurality of processing spaces, said inner pressure of said processing space (a) and an inner pressure of (b) at least one of the processing spaces arranged before or after said processing space (a) are controlled. A substrate-processing apparatus comprising a plurality of processing spaces, a substrate transportation means for transporting a substrate to pass through said plurality of processing spaces while said substrate being processed in each processing space, and a pressure gage of measuring an inner pressure of (a) one of said plurality of processing spaces, characterized in that said substrate-processing apparatus has a control unit for controlling the inner pressure of said processing space (a) and that of (b) at least one of the processing spaces arranged before or after said processing space (a) based on information obtained from said pressure gage.
摘要翻译：一种基板处理方法，包括在每个处理空间中处理所述基板的同时传送基板以通过彼此连通的多个处理空间，其特征在于，基于所述多个处理空间中的一个的内部压力，所述处理空间（a）的所述内部压力和所述处理空间（a）之前或之后布置的处理空间中的至少一个处理空间（b）的内部压力被控制。1。一种基板处理设备，包括多个处理空间，基板传送装置，用于在每个处理空间中处理所述基板的同时传送基板以通过所述多个处理空间;以及压力计，测量所述多个处理空间中的一个处理空间中的（a）的内部压力，其特征在于，所述基板处理装置具有用于控制所述处理空间（a）和（b）的内部压力的控制单元基于从所述压力计获得的信息，在所述处理空间（a）之前或之后布置的处理空间中的至少一个。

8. 发明授权

US06350489B1 Deposited-film forming process and deposited-film forming apparatus 失效
标题翻译：沉积膜形成工艺和沉积膜形成装置
公开(公告)号：US06350489B1
公开(公告)日：2002-02-26
申请号：US08768609
申请日：1996-12-18
申请人： Koichiro Moriyama , Hiroshi Echizen , Masahiro Kanai , Hirokazu Ohtoshi , Takehito Yoshino , Atsushi Yasuno , Kohei Yoshida , Yusuke Miyamoto
发明人： Koichiro Moriyama , Hiroshi Echizen , Masahiro Kanai , Hirokazu Ohtoshi , Takehito Yoshino , Atsushi Yasuno , Kohei Yoshida , Yusuke Miyamoto
IPC分类号： C23C1654
CPC分类号： C23C16/545
摘要： To provide a deposited-film forming process and a deposited-film forming apparatus that may cause no scratches on the film forming surface to improve yield and enable stable discharge to thereby continuously form deposited films having uniform quality and uniform thickness, deposited films are formed by lengthwise continuously transporting a belt-like substrate so as to form a part of a discharge space, wherein the substrate is transported while bringing the transverse sectional shape of the substrate which forms a part of the discharge space into a curved shape by a roller.
摘要翻译：为了提供沉积膜形成工艺和沉积膜形成装置，其可以在膜形成表面上不产生划痕以提高产量并且能够稳定地放电，从而连续地形成具有均匀质量和均匀厚度的沉积膜，沉积膜通过纵向连续输送带状基板以形成放电空间的一部分，其中基板被输送，同时通过辊将构成放电空间的一部分的基板的横截面形状带入弯曲形状。

9. 发明授权

US6113732A Deposited film forming apparatus 失效
标题翻译：沉积成膜装置
公开(公告)号：US6113732A
公开(公告)日：2000-09-05
申请号：US814081
申请日：1997-03-10
申请人： Kohei Yoshida , Hiroshi Echizen , Masahiro Kanai , Hirokazu Ohtoshi , Takehito Yoshino , Masatoshi Tanaka
发明人： Kohei Yoshida , Hiroshi Echizen , Masahiro Kanai , Hirokazu Ohtoshi , Takehito Yoshino , Masatoshi Tanaka
IPC分类号： G03G5/08 , C23C16/44 , C23C16/48 , C23C16/50 , C23C16/511 , C23C16/54 , H01L21/00 , H01L21/205 , C23F1/02
CPC分类号： H01L21/67109 , C23C16/4412 , C23C16/481 , C23C16/545
摘要： A deposit film forming apparatus is characterized in that a temperature control member for controlling the temperature of a wall of deposition chamber is in contact with an outer wall of a deposition chamber through a heat conductivity adjusting plate, which can prevent overcooling while suppressing an increase in the temperature of the wall of deposition chamber during film formation and which can maintain the temperature of the wall of deposition chamber at a preferable temperature for deposition of film for a long time, thereby forming a deposit film. As a result, the apparatus can mass-produce deposit films of stable quality, especially, large-area and good-quality photovoltaic elements utilizing amorphous semiconductors, over a long period.
摘要翻译：沉积膜形成装置的特征在于，用于控制沉积室壁的温度的温度控制构件通过导热性调节板与沉积室的外壁接触，其可以防止过度冷却，同时抑制在成膜期间沉积室壁的温度，并且可以将沉积室的温度保持在用于长时间沉积膜的优选温度，从而形成沉积膜。因此，该设备可以长时间大量生产质量稳定的沉积膜，特别是利用非晶半导体的大面积和优质光伏元件。

10. 发明授权

US4735822A Method for producing an electronic device having a multi-layer structure 失效
标题翻译：一种具有多层结构的电子装置的制造方法
公开(公告)号：US4735822A
公开(公告)日：1988-04-05
申请号：US945815
申请日：1986-12-24
申请人： Hirokazu Ohtoshi , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Hirokazu Ohtoshi , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/44 , C23C16/452 , C23C16/48 , C23C16/54 , G03G5/08 , G03G5/082 , H01L21/205 , H01L21/263 , H01L21/336 , H01L29/78 , H01L29/786 , H01L31/075 , H01L31/20 , H01L21/203 , B05D3/06
CPC分类号： G03G5/08278 , C23C16/452 , C23C16/482 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate, comprises forming at least one of said valence electron controlled semiconductor thin layers according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
摘要翻译：一种具有多层结构的电子器件的制造方法，该多层结构包括在基片上形成的一个或多个价数电子控制的半导体薄层，包括根据光CVD法形成至少一个所述价电子受控半导体薄层，并形成在根据包括引入用于成膜的气态原料和具有将所述起始材料氧化成反应空间的性质的气态卤素氧化剂的方法，至少一个其它组成层，以在其间形成化学接触，从而形成多个前体，包括在激发态中的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。

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