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    • 21. 发明授权
    • Exposure method and method of manufacturing semiconductor device
    • 半导体器件的制造方法及制造方法
    • US06872508B2
    • 2005-03-29
    • US10180004
    • 2002-06-26
    • Nobuhiro KomineKeita AsanumaTatsuhiko Higashiki
    • Nobuhiro KomineKeita AsanumaTatsuhiko Higashiki
    • G02B5/18G03F1/36G03F1/70G03F7/20H01L21/027H01L21/301G03F9/00
    • G03F7/70433
    • Disclosed is an exposure method comprising preparing an exposure apparatus including an illumination system and a projection lens, setting, in the exposure apparatus, a photomask having a mask pattern including a plurality of unit circuit patterns arranged like a checkered flag pattern and a plurality of unit auxiliary patterns arranged between the unit circuit patterns, and projecting the mask pattern onto a substrate through the projection lens by irradiating the photomask with light from the illumination system, wherein the unit circuit patterns and the unit auxiliary patterns generate a plurality of diffraction light spots on a pupil plane of the projection lens, and the four diffraction light spots having higher light intensities than the remaining diffraction light spots are distributed on the pupil plane in a cycle of 90°.
    • 公开了一种曝光方法,包括准备包括照明系统和投影透镜的曝光装置,在曝光装置中设置具有掩模图案的光掩模,所述掩模图案包括布置成格子状图案的多个单位电路图案和多个单元 辅助图案,布置在单元电路图案之间,并且通过用来自照明系统的光照射光掩模,通过投影透镜将掩模图案投影到基板上,其中单元电路图案和单元辅助图案在 投影透镜的光瞳面,并且具有比剩余的衍射光斑更高的光强度的四个衍射光点以90°的周期分布在光瞳面上。
    • 28. 发明授权
    • Exposure tool and method capable of correcting high (N-TH) order light
exposure errors depending upon an interfield coordinate
    • 能够根据场间坐标校正高(N-TH)次曝光误差的曝光工具和方法
    • US06008880A
    • 1999-12-28
    • US821447
    • 1997-03-21
    • Tatsuhiko HigashikiKeita Asanuma
    • Tatsuhiko HigashikiKeita Asanuma
    • G03F7/20G03F9/00H01L21/027G01B11/26G03B27/42
    • G03F7/70591G03F7/70691G03F9/70
    • A light exposure tool of the present invention is so structured as to enable the correction of a linear intrafield error of a shot and of a higher-order intrafield error of the shot depending upon an interfield of a wafer. The light exposure tool comprises a reticle having a written circuit pattern, a reticle stage having the reticle placed on it, a reticle XY stage drive controller, a reticle stage position measuring mechanism, a wafer stage having a semiconductor wafer placed on it, the semiconductor wafer having a plurality of alignment marks formed on it for position identification, a wafer XY stage drive controller, a wafer stage position measuring mechanism, a projection optical mechanism for projecting the circuit pattern of the reticle onto the wafer to create a shot, an alignment mechanism for detecting positions of the alignment marks 9 and setting the reticle and wafer in a desired position, a calculation device, a shot rotation adjusting controller, and an isotropic magnification controller. At a time of light exposures by the projection optical mechanism on the wafer, a per-exposure systematic error of at least one of a rotation error, magnification error and skew error is approximated with an n-th order function Ls (x, y) in an interfield coordinate (x, y) of the wafer to control the alignment mechanism in accordance with the function Ls (x, y) and to correct the per-exposure systematic error depending upon the interfield coordinate of the wafer.
    • 本发明的曝光工具被构造成使得能够根据晶片的间隔来校正镜头的镜头的线性场内误差和镜头的高阶场内误差。 曝光工具包括具有写入电路图案的标线片,其上放置有掩模版的标线片台,标线片XY台驱动控制器,标线片台位置测量机构,具有放置在其上的半导体晶片的晶片台,半导体 具有形成在其上用于位置识别的多个对准标记的晶片,晶片XY台驱动控制器,晶片台位置测量机构,用于将掩模版的电路图案投影到晶片上以产生镜头的投影光学机构,对准 用于检测对准标记9的位置并将掩模版和晶片设置在期望位置的机构,计算装置,镜头旋转调节控制器和各向同性放大控制器。 在由晶片上的投影光学机构进行光照射的时刻,旋转误差,放大误差和偏斜误差中的至少一个的每个曝光系统误差用n阶函数Ls(x,y)近似, 在晶片的场间坐标(x,y)中,根据函数Ls(x,y)来控制对准机构,并且根据晶片的场间坐标校正每曝光系统误差。