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1. 发明申请

US20110229826A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：用于形成电阻图案的半导体器件制造方法和基板处理装置
公开(公告)号：US20110229826A1
公开(公告)日：2011-09-22
申请号：US13118779
申请日：2011-05-31
申请人： Daisuke KAWAMURA , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke KAWAMURA , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

2. 发明授权

US07968272B2 Semiconductor device manufacturing method to form resist pattern 失效
标题翻译：形成抗蚀剂图案的半导体器件制造方法
公开(公告)号：US07968272B2
公开(公告)日：2011-06-28
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03C5/04
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

3. 发明申请

US20070128554A1 Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus 失效
标题翻译：形成抗蚀剂图案的半导体器件制造方法以及基板处理装置
公开(公告)号：US20070128554A1
公开(公告)日：2007-06-07
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

4. 发明申请

US20070190462A1 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20070190462A1
公开(公告)日：2007-08-16
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

5. 发明授权

US07794923B2 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US07794923B2
公开(公告)日：2010-09-14
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

6. 发明申请

US20060008746A1 Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060008746A1
公开(公告)日：2006-01-12
申请号：US11174720
申请日：2005-07-06
申请人： Yasunobu Onishi , Kenji Chiba , Daisuke Kawamura , Shinichi Ito , Koutaro Sho , Tomoyuki Takeishi
发明人： Yasunobu Onishi , Kenji Chiba , Daisuke Kawamura , Shinichi Ito , Koutaro Sho , Tomoyuki Takeishi
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , G03F7/70341
摘要： The present application provides a method for manufacturing a semiconductor device, the method including forming a resist film on a substrate, forming a protective film on the resist film, exposing the resist film with a first liquid interposed between the protective film and a lens for exposure, removing the protective film using an oxidative second liquid after exposing the resist film, and developing the resist film to form a resist pattern after removing the protective film.
摘要翻译：本申请提供了一种制造半导体器件的方法，该方法包括在衬底上形成抗蚀剂膜，在抗蚀剂膜上形成保护膜，用保护膜和用于曝光的透镜之间的第一液体暴露抗蚀剂膜在曝光抗蚀剂膜之后使用氧化性第二液体除去保护膜，并且在除去保护膜之后使抗蚀剂膜显影以形成抗蚀剂图案。

7. 发明授权

US07527918B2 Pattern forming method and method for manufacturing a semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US07527918B2
公开(公告)日：2009-05-05
申请号：US10992349
申请日：2004-11-19
申请人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
发明人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/40 , G03F7/405
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译：图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案，通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸模式。

8. 发明申请

US20050130068A1 Pattern forming method and method for manufacturing a semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20050130068A1
公开(公告)日：2005-06-16
申请号：US10992349
申请日：2004-11-19
申请人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
发明人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
IPC分类号： G03F7/40 , G03F7/00 , G03F7/20 , H01L21/00 , H01L21/027
CPC分类号： G03F7/40 , G03F7/405
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译：图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案，通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸模式。

9. 发明授权

US07399578B2 Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效
标题翻译：碱溶液及其制造方法，碱性溶液应用于图案形成方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，溶液供给方法和半导体器件制造方法
公开(公告)号：US07399578B2
公开(公告)日：2008-07-15
申请号：US11493629
申请日：2006-07-27
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03F7/32
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译：一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

10. 发明申请

US20070037099A1 Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效
标题翻译：碱溶液及其制造方法，碱性溶液应用于图案形成方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，溶液供给方法和半导体器件制造方法
公开(公告)号：US20070037099A1
公开(公告)日：2007-02-15
申请号：US11493629
申请日：2006-07-27
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03C5/00
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译：一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

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