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21. 发明授权

US08158984B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same 有权
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08158984B2
公开(公告)日：2012-04-17
申请号：US12458126
申请日：2009-07-01
申请人： Ji-Su Ahn , Eui-Hoon Hwang , Cheol-Ho Yu , Kwang-Nam Kim , Sung-Chul Kim
发明人： Ji-Su Ahn , Eui-Hoon Hwang , Cheol-Ho Yu , Kwang-Nam Kim , Sung-Chul Kim
IPC分类号： H01L29/04
CPC分类号： H01L29/78675 , H01L27/1248 , H01L27/1285 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.
摘要翻译：一种薄膜晶体管（TFT），包括在基板上的晶体半导体图形，在晶体半导体图案上的栅极绝缘层，栅极绝缘层具有两个第一源极/漏极接触孔和半导体图案访问孔，栅电极在栅极绝缘层上，栅电极位于两个第一源极/漏极接触孔之间，覆盖栅电极的层间绝缘层，其中具有两个第二源极/漏极接触孔的层间绝缘层，以及栅电极上的源极和漏极层间绝缘层，源极和漏极中的每一个与栅电极绝缘，并且具有通过第一和第二源极/漏极接触孔连接到晶体半导体图案的部分。

22. 发明申请

US20110300675A1 Method of fabricating thin film transistor 审中-公开
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20110300675A1
公开(公告)日：2011-12-08
申请号：US13137369
申请日：2011-08-09
申请人： Ji-Su Ahn , Sung-Chul Kim
发明人： Ji-Su Ahn , Sung-Chul Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/02532 , H01L21/02667 , H01L27/124 , H01L27/1248 , H01L27/1281 , H01L27/3262
摘要： The thin film transistor for an organic light emitting diode includes a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern having first source and drain contact holes, a gate electrode on the gate insulating layer, the gate electrode being between the first source and drain contact holes, an interlayer insulating layer covering the gate electrode, having second source and drain contact holes, source and drain electrode in the second source and drain contact holes, insulated from the gate electrode and electrically connected to the crystalline semiconductor pattern by first and second metal patterns in the first source and drain contact holes, respectively, wherein the gate electrode, the first metal pattern in the first source contact hole and the second metal pattern in the first drain contact hole are each made of a same material.
摘要翻译：用于有机发光二极管的薄膜晶体管包括在衬底上的晶体半导体图案，在晶体半导体图案上的栅极绝缘层具有第一源极和漏极接触孔，栅极绝缘层上的栅电极，第一源极和漏极接触孔，覆盖栅电极的层间绝缘层，具有第二源极和漏极接触孔，第二源极和漏极接触孔中的源极和漏极，与栅电极绝缘并电连接到晶体半导体分别在第一源极和漏极接触孔中的第一和第二金属图案的图案，其中栅电极，第一源极接触孔中的第一金属图案和第一漏极接触孔中的第二金属图案分别由相同的材料。

23. 发明申请

US20100227443A1 METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER 审中-公开
标题翻译：形成多晶硅层的方法
公开(公告)号：US20100227443A1
公开(公告)日：2010-09-09
申请号：US12713928
申请日：2010-02-26
申请人： Kil-Won LEE , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Byoung-Keon Park , Maxim Lisachenko , Ji-Su Ahn , Young-Dae Kim , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Yun-Mo Chung , Min-Jae Jeong , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang
发明人： Kil-Won LEE , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Byoung-Keon Park , Maxim Lisachenko , Ji-Su Ahn , Young-Dae Kim , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Yun-Mo Chung , Min-Jae Jeong , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/02532 , H01L21/02422 , H01L21/02488 , H01L21/02592 , H01L21/0262 , H01L21/02672 , H01L27/1277 , H01L29/66757
摘要： A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal. The resultant polycrystalline silicon layer has an improved charge mobility.
摘要翻译：形成多晶硅层的方法包括通过使用包含硅原子和氢气的气体的化学气相沉积在基板上形成非晶硅层，并且使用结晶诱导金属将非晶硅层结晶成多晶硅层。所得多晶硅层具有改善的电荷迁移率。

24. 发明申请

US20100227060A1 ATOMIC LAYER DEPOSITION APPARATUS AND METHOD OF FABRICATING ATOMIC LAYER USING THE SAME 有权
标题翻译：原子层沉积装置及使用其制造原子层的方法
公开(公告)号：US20100227060A1
公开(公告)日：2010-09-09
申请号：US12714217
申请日：2010-02-26
申请人： Heung-Yeol Na , Kl-Yong Lee , Min-Jae Jeong , Jong-Won Hong , Yun-Mo Chung , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Ji-Su Ahn , Tae-Hoon Yang , Young-Dae Kim , Bypung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Sang-Hyun Yun
发明人： Heung-Yeol Na , Kl-Yong Lee , Min-Jae Jeong , Jong-Won Hong , Yun-Mo Chung , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Ji-Su Ahn , Tae-Hoon Yang , Young-Dae Kim , Bypung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Sang-Hyun Yun
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/042 , C30B25/165 , C30B35/00
摘要： An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.
摘要翻译：原子层沉积装置包括：室，用于控制室中的压力的真空泵;将反应气体供应到室中的气体供应单元;设置在真空泵和气体供应单元之间并具有加热器设置在所述衬底保持器和所述气体供应单元之间并具有用于移动冷却剂的冷却路径的掩模组件以及用于将所述冷却剂供应到所述冷却路径中的冷却剂源。掩模组件定位在离基板的第一距离处，并且冷却剂被供应到掩模组件的冷却路径中。使用基板保持器的加热器加热基板，使用真空泵控制室的压力，并且通过气体供应单元依次供应反应气体。

25. 发明授权

US07776669B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07776669B2
公开(公告)日：2010-08-17
申请号：US11863824
申请日：2007-09-28
申请人： Ji-Su Ahn
发明人： Ji-Su Ahn
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2022 , H01L27/1277 , H01L27/1296 , H01L29/045 , H01L29/78696
摘要： A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, and including polycrystalline silicon having a constant directivity and a uniformly distributed crystal grain boundary; a gate insulating layer; a gate electrode; an interlayer insulating layer; and source and drain electrodes. The thin film transistor is formed by preparing a substrate including a first region, a second region, and a third region; forming an amorphous silicon layer on the first region, second region, and third region of the substrate; doping a first impurity containing boron into an amorphous silicon layer of the first region; forming a crystallization inducing material on the amorphous silicon layer of the first region; applying crystallization energy to the amorphous silicon layer, and crystallizing the amorphous silicon layers of the first region and the second region adjacent to the first region to form polycrystalline silicon layers; crystallizing the amorphous silicon layer of the third region adjacent to the second region to form a polycrystalline silicon layer using a laser crystallization method; and patterning the polycrystalline silicon layers of the first region, the second region, and the third region to form a semiconductor layer on the third region.
摘要翻译：薄膜晶体管包括基板; 设置在所述基板上的半导体层，并且包括具有恒定方向性和均匀分布的晶粒边界的多晶硅; 栅极绝缘层; 栅电极; 层间绝缘层; 以及源极和漏极。薄膜晶体管通过制备包括第一区域，第二区域和第三区域的衬底来形成; 在所述衬底的所述第一区域，第二区域和第三区域上形成非晶硅层; 将含有硼的第一杂质掺杂到所述第一区域的非晶硅层中; 在所述第一区域的所述非晶硅层上形成结晶诱导材料; 对所述非晶硅层施加结晶能，并且使所述第一区域和与所述第一区域相邻的所述第二区域的所述非晶硅层结晶以形成多晶硅层; 使用激光结晶法使与第二区域相邻的第三区域的非晶硅层结晶，形成多晶硅层; 以及对第一区域，第二区域和第三区域的多晶硅层进行构图，以在第三区域上形成半导体层。

26. 发明申请

US20100001266A1 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same 审中-公开
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20100001266A1
公开(公告)日：2010-01-07
申请号：US12458142
申请日：2009-07-01
申请人： Ji-Su Ahn , Sung-Chul Kim
发明人： Ji-Su Ahn , Sung-Chul Kim
IPC分类号： H01L51/52 , H01L29/786 , H01L21/336
CPC分类号： H01L21/02532 , H01L21/02667 , H01L27/124 , H01L27/1281 , H01L27/3262 , H01L29/66757
摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, an interlayer insulating layer on the entire surface of the substrate having the gate electrode, a first contact hole and a second contact hole, and source and drain electrodes on the interlayer insulating layer, insulated from the gate electrode, and having a portion connected with the semiconductor layer through the first contact hole. An organic light emitting diode display may include the thin film transistor along with a passivation layer on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode, which are on the passivation layer and electrically connected with the source and drain electrodes.
摘要翻译：薄膜晶体管包括衬底，衬底上的缓冲层，缓冲层上的半导体层，半导体层上的栅极绝缘层，栅极绝缘层上的栅极电极，整个表面上的层间绝缘层具有栅电极的基板，第一接触孔和第二接触孔，以及与栅电极绝缘的层间绝缘层上的源电极和漏电极，并且具有通过第一接触孔与半导体层连接的部分。有机发光二极管显示器可以包括薄膜晶体管以及在基板的整个表面上的钝化层，以及第一电极，有机层和第二电极，它们位于钝化层上并与源极和漏极。

27. 发明申请

US20090189160A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE TFT 有权
标题翻译：薄膜晶体管，其制造方法以及具有TFT的有机发光二极管显示装置
公开(公告)号：US20090189160A1
公开(公告)日：2009-07-30
申请号：US12357513
申请日：2009-01-22
申请人： Ji-Su AHN , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Kil-Won Lee , Ki-Yong Lee , Sung-Chul Kim
发明人： Ji-Su AHN , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Kil-Won Lee , Ki-Yong Lee , Sung-Chul Kim
IPC分类号： H01L33/00 , H01L21/84 , H01J1/62
CPC分类号： H01L29/458 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/66765
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及具有TFT的有机发光二极管（OLED）显示装置，TFT包括基板，设置在基板上的栅极电极，设置在基板上的栅极绝缘层栅电极，设置在栅绝缘层上并使用金属催化剂结晶的半导体层，以及设置在半导体层上并电连接到半导体层的源极和漏极区的源极和漏极。第二金属被扩散到半导体层的表面区域中，以从半导体层的沟道区域吸收金属催化剂。第二种金属在硅中的扩散系数可以低于金属催化剂。

28. 发明申请

US20080111133A1 THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20080111133A1
公开(公告)日：2008-05-15
申请号：US11863824
申请日：2007-09-28
申请人： JI-SU AHN
发明人： JI-SU AHN
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2022 , H01L27/1277 , H01L27/1296 , H01L29/045 , H01L29/78696
摘要： A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, and including polycrystalline silicon having a constant directivity and a uniformly distributed crystal grain boundary; a gate insulating layer; a gate electrode; an interlayer insulating layer; and source and drain electrodes. The thin film transistor is formed by preparing a substrate including a first region, a second region, and a third region; forming an amorphous silicon layer on the first region, second region, and third region of the substrate; doping a first impurity containing boron into an amorphous silicon layer of the first region; forming a crystallization inducing material on the amorphous silicon layer of the first region; applying crystallization energy to the amorphous silicon layer, and crystallizing the amorphous silicon layers of the first region and the second region adjacent to the first region to form polycrystalline silicon layers; crystallizing the amorphous silicon layer of the third region adjacent to the second region to form a polycrystalline silicon layer using a laser crystallization method; and patterning the polycrystalline silicon layers of the first region, the second region, and the third region to form a semiconductor layer on the third region.
摘要翻译：薄膜晶体管包括基板; 设置在所述基板上的半导体层，并且包括具有恒定方向性和均匀分布的晶粒边界的多晶硅; 栅极绝缘层; 栅电极; 层间绝缘层; 以及源极和漏极。薄膜晶体管通过制备包括第一区域，第二区域和第三区域的衬底来形成; 在所述衬底的所述第一区域，第二区域和第三区域上形成非晶硅层; 将含有硼的第一杂质掺杂到所述第一区域的非晶硅层中; 在所述第一区域的所述非晶硅层上形成结晶诱导材料; 对所述非晶硅层施加结晶能，并且使所述第一区域和与所述第一区域相邻的所述第二区域的所述非晶硅层结晶以形成多晶硅层; 使用激光结晶法使与第二区域相邻的第三区域的非晶硅层结晶，形成多晶硅层; 以及对第一区域，第二区域和第三区域的多晶硅层进行构图，以在第三区域上形成半导体层。

29. 发明授权

US08519405B2 Thin film transistor, organic light emitting diode (OLED) display including the same, and manufacturing methods of them 有权
标题翻译：薄膜晶体管，有机发光二极管（OLED）显示器包括它们及其制造方法
公开(公告)号：US08519405B2
公开(公告)日：2013-08-27
申请号：US13102234
申请日：2011-05-06
申请人： Ji-Su Ahn , Kwang-Nam Kim , Jae-Yong Lee , Beong-Ju Kim , In-Young Jung
发明人： Ji-Su Ahn , Kwang-Nam Kim , Jae-Yong Lee , Beong-Ju Kim , In-Young Jung
IPC分类号： H01L27/14
CPC分类号： H01L29/66765 , H01L27/3262 , H01L29/42384 , H01L29/78678
摘要： The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof. The organic light emitting diode (OLED) display comprises the elements of the thin film transistor described above, and also includes an insulating film disposed on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode disposed on the insulating film, the first electrode being electrically connected to any one of the source and drain electrodes, and the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer.
摘要翻译：本发明一般涉及薄膜晶体管，包括该薄膜晶体管的有机发光二极管（OLED）显示器及其制造方法。薄膜晶体管包括：基板; 设置在所述基板上的栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体层; 设置在所述基板的整个表面上的层间电介质; 以及源极和漏极，其设置在层间电介质上并连接到半导体层，并且其中栅电极设置成对应于半导体层的整个表面及其制造方法。有机发光二极管（OLED）显示器包括上述薄膜晶体管的元件，并且还包括设置在基板的整个表面上的绝缘膜，以及设置在基板上的第一电极，有机层和第二电极绝缘膜，第一电极电连接到源极和漏极中的任何一个，并且栅电极被设置为对应于半导体层的整个表面。

30. 发明授权

US08278716B2 Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor 有权
标题翻译：制造多晶硅的方法，薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08278716B2
公开(公告)日：2012-10-02
申请号：US12650078
申请日：2009-12-30
申请人： Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Ji-Su Ahn , Maxim Lisachenko
发明人： Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee , Ji-Su Ahn , Maxim Lisachenko
IPC分类号： H01L23/62 , H01L29/10 , H01L21/20 , H01L21/36 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L21/02672 , H01L21/02488 , H01L21/02532 , H01L27/1277 , H01L27/1281 , H01L29/66757 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.
摘要翻译：一种薄膜晶体管，一种制造该薄膜晶体管的方法和一种包括该薄膜晶体管的有机发光二极管（OLED）显示装置，该薄膜晶体管包括：一基板; 形成在所述基板上的缓冲层; 设置在缓冲层上的第一半导体层; 设置在所述第一半导体层上的比所述第一半导体层大的第二半导体层; 与第一半导体层和第二半导体层绝缘的栅电极; 栅极绝缘层，用于使栅电极与第一半导体层和第二半导体层绝缘; 源极和漏极与栅电极绝缘并连接到第二半导体层; 设置在源极和漏极上的绝缘层和连接到源极和漏极之一的有机发光二极管。

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