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1. 发明申请

US20100227060A1 ATOMIC LAYER DEPOSITION APPARATUS AND METHOD OF FABRICATING ATOMIC LAYER USING THE SAME 有权
标题翻译：原子层沉积装置及使用其制造原子层的方法
公开(公告)号：US20100227060A1
公开(公告)日：2010-09-09
申请号：US12714217
申请日：2010-02-26
申请人： Heung-Yeol Na , Kl-Yong Lee , Min-Jae Jeong , Jong-Won Hong , Yun-Mo Chung , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Ji-Su Ahn , Tae-Hoon Yang , Young-Dae Kim , Bypung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Sang-Hyun Yun
发明人： Heung-Yeol Na , Kl-Yong Lee , Min-Jae Jeong , Jong-Won Hong , Yun-Mo Chung , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Ji-Su Ahn , Tae-Hoon Yang , Young-Dae Kim , Bypung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Sang-Hyun Yun
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/042 , C30B25/165 , C30B35/00
摘要： An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.
摘要翻译：原子层沉积装置包括：室，用于控制室中的压力的真空泵;将反应气体供应到室中的气体供应单元;设置在真空泵和气体供应单元之间并具有加热器设置在所述衬底保持器和所述气体供应单元之间并具有用于移动冷却剂的冷却路径的掩模组件以及用于将所述冷却剂供应到所述冷却路径中的冷却剂源。掩模组件定位在离基板的第一距离处，并且冷却剂被供应到掩模组件的冷却路径中。使用基板保持器的加热器加热基板，使用真空泵控制室的压力，并且通过气体供应单元依次供应反应气体。

2. 发明授权

US08486195B2 Atomic layer deposition apparatus and method of fabricating atomic layer using the same 有权
标题翻译：原子层沉积装置及使用其制造原子层的方法
公开(公告)号：US08486195B2
公开(公告)日：2013-07-16
申请号：US12714217
申请日：2010-02-26
申请人： Heung-Yeol Na , Ki-Yong Lee , Min-Jae Jeong , Jong-Won Hong , Yun-Mo Chung , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Ji-Su Ahn , Tae-Hoon Yang , Young-Dae Kim , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Sang-Hyun Yun
发明人： Heung-Yeol Na , Ki-Yong Lee , Min-Jae Jeong , Jong-Won Hong , Yun-Mo Chung , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Ji-Su Ahn , Tae-Hoon Yang , Young-Dae Kim , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Sang-Hyun Yun
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/042 , C30B25/165 , C30B35/00
摘要： An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.
摘要翻译：原子层沉积装置包括：室，用于控制室中的压力的真空泵;将反应气体供应到室中的气体供应单元;设置在真空泵和气体供应单元之间并具有加热器设置在所述衬底保持器和所述气体供应单元之间并具有用于移动冷却剂的冷却路径的掩模组件以及用于将所述冷却剂供应到所述冷却路径中的冷却剂源。掩模组件定位在离基板的第一距离处，并且冷却剂被供应到掩模组件的冷却路径中。使用基板保持器的加热器加热基板，使用真空泵控制室的压力，并且通过气体供应单元依次供应反应气体。

3. 发明授权

US08048783B2 Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same 有权
标题翻译：形成多晶硅层的方法和用于其的原子层沉积装置
公开(公告)号：US08048783B2
公开(公告)日：2011-11-01
申请号：US12714252
申请日：2010-02-26
申请人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
发明人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , C23C14/04 , H01L21/02422 , H01L21/02488 , H01L21/02672
摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法和用于其的原子层沉积装置。该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

4. 发明申请

US20100227458A1 METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME 有权
标题翻译：形成多晶硅层的方法和用于其的原子沉积沉积装置
公开(公告)号：US20100227458A1
公开(公告)日：2010-09-09
申请号：US12714252
申请日：2010-02-26
申请人： Yun-Mo CHUNG , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
发明人： Yun-Mo CHUNG , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
IPC分类号： H01L21/20 , C23C16/48
CPC分类号： H01L21/02532 , C23C14/04 , H01L21/02422 , H01L21/02488 , H01L21/02672
摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法和用于其的原子层沉积装置。该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

5. 发明授权

US08546248B2 Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same 有权
标题翻译：形成多晶硅层的方法和用于其的原子层沉积装置
公开(公告)号：US08546248B2
公开(公告)日：2013-10-01
申请号：US13177936
申请日：2011-07-07
申请人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
发明人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , C23C14/04 , H01L21/02422 , H01L21/02488 , H01L21/02672
摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法和用于其的原子层沉积装置。该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

6. 发明申请

US20100227443A1 METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER 审中-公开
标题翻译：形成多晶硅层的方法
公开(公告)号：US20100227443A1
公开(公告)日：2010-09-09
申请号：US12713928
申请日：2010-02-26
申请人： Kil-Won LEE , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Byoung-Keon Park , Maxim Lisachenko , Ji-Su Ahn , Young-Dae Kim , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Yun-Mo Chung , Min-Jae Jeong , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang
发明人： Kil-Won LEE , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Byoung-Keon Park , Maxim Lisachenko , Ji-Su Ahn , Young-Dae Kim , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Yun-Mo Chung , Min-Jae Jeong , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/02532 , H01L21/02422 , H01L21/02488 , H01L21/02592 , H01L21/0262 , H01L21/02672 , H01L27/1277 , H01L29/66757
摘要： A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal. The resultant polycrystalline silicon layer has an improved charge mobility.
摘要翻译：形成多晶硅层的方法包括通过使用包含硅原子和氢气的气体的化学气相沉积在基板上形成非晶硅层，并且使用结晶诱导金属将非晶硅层结晶成多晶硅层。所得多晶硅层具有改善的电荷迁移率。

7. 发明授权

US08319296B2 Semiconductor device including carbon-containing electrode and method for fabricating the same 有权
标题翻译：包含含碳电极的半导体装置及其制造方法
公开(公告)号：US08319296B2
公开(公告)日：2012-11-27
申请号：US12648337
申请日：2009-12-29
申请人： Kwan-Woo Do , Kee-Jeung Lee , Young-Dae Kim , Mi-Hyoung Lee , Jeong-Yeop Lee
发明人： Kwan-Woo Do , Kee-Jeung Lee , Young-Dae Kim , Mi-Hyoung Lee , Jeong-Yeop Lee
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： C23C16/45531 , C23C16/34 , C23C16/36 , C23C16/4554 , H01L21/28537 , H01L21/28562 , H01L21/28568 , H01L27/10885 , H01L28/60 , H01L29/4966
摘要： In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity.
摘要翻译：在包含含碳电极的半导体器件及其制造方法中，由于其中含有含碳的TiN层，电极具有高功函数。可以提供具有高介电常数的介电层，从而通过形成具有高功函的电极来减小漏电流。此外，通过使用具有高功函数的电极和具有高介电常数的电介质层，可以确保电容器的足够的电容。

8. 发明申请

US20120292621A1 Organic Light-Emitting Display Apparatus and Method of Manufacturing the Same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20120292621A1
公开(公告)日：2012-11-22
申请号：US13238928
申请日：2011-09-21
申请人： Jong-Yun Kim , Il-Jeong Lee , Young-Dae Kim
发明人： Jong-Yun Kim , Il-Jeong Lee , Young-Dae Kim
IPC分类号： H01L51/10 , H01L51/56
CPC分类号： H01L27/3258 , H01L27/3223 , H01L27/3246
摘要： An organic light-emitting display apparatus may include: a planarization layer disposed on a substrate and covering a plurality of thin film transistors; pixel electrodes, each comprising a light emission portion and anon-light emission portion, the light emission portion being arranged on the planarization layer in a first grid pattern; via-holes, each connecting one thin film transistor and one pixel electrode through the planarization layer, and arranged in a second grid pattern offset from the first grid pattern; dummy via-holes spaced apart from the via-holes; a pixel-defining layer (PDL) disposed on the planarization layer and covering the via-holes, the dummy via-holes, and the non-light emission portion of the pixel electrodes; an organic layer disposed on the light emission portion and comprising an emissive layer; and an opposite electrode disposed on the organic layer.
摘要翻译：有机发光显示装置可以包括：设置在基板上并覆盖多个薄膜晶体管的平坦化层; 每个像素电极包括发光部分和阴极发射部分，所述发光部分以第一格子图案布置在所述平坦化层上; 通孔，每个通过所述平坦化层连接一个薄膜晶体管和一个像素电极，并且以与所述第一格栅图案偏移的第二格栅图案布置; 与通孔间隔开的虚拟通孔; 设置在平坦化层上并覆盖像素电极的通孔，虚拟通孔和非发光部分的像素限定层（PDL）; 设置在所述发光部分上并包括发光层的有机层; 以及设置在有机层上的相对电极。

9. 发明授权

US08288274B2 Method of forming noble metal layer using ozone reaction gas 有权
标题翻译：使用臭氧反应气体形成贵金属层的方法
公开(公告)号：US08288274B2
公开(公告)日：2012-10-16
申请号：US12318468
申请日：2008-12-30
申请人： Deok-Sin Kil , Kee-Jeung Lee , Young-Dae Kim , Jin-Hyock Kim , Kwan-Woo Do , Kyung-Woong Park , Jeong-Yeop Lee , Ja-Yong Kim
发明人： Deok-Sin Kil , Kee-Jeung Lee , Young-Dae Kim , Jin-Hyock Kim , Kwan-Woo Do , Kyung-Woong Park , Jeong-Yeop Lee , Ja-Yong Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/28562 , C23C16/045 , C23C16/18 , C23C16/44 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/7687 , H01L21/76873 , H01L27/105 , H01L27/11502 , H01L28/65
摘要： A noble metal layer is formed using ozone (O3) as a reaction gas.
摘要翻译：使用臭氧（O 3）作为反应气体形成贵金属层。

10. 发明授权

US08048757B2 Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodes 失效
标题翻译：用于制造电容器的方法利用包围存储节点的上外壁的牺牲图案
公开(公告)号：US08048757B2
公开(公告)日：2011-11-01
申请号：US13069290
申请日：2011-03-22
申请人： Jae-Sung Roh , Kee-Jeung Lee , Han-Sang Song , Seung-Jin Yeom , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim
发明人： Jae-Sung Roh , Kee-Jeung Lee , Han-Sang Song , Seung-Jin Yeom , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/10852 , H01L28/65
摘要： A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial pattern is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer in the peripheral region is etched to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.
摘要翻译：制造电容器的方法包括在衬底的单元区域和周边区域上形成隔离层。隔离层在单元区域中形成多个开放区域。存储节点形成在开放区域的表面上。蚀刻隔离层的上部以露出存储节点的上部外壁。在隔离层上形成牺牲图案以封闭存储节点的上外壁。对外围区域中的隔离层进行蚀刻，以在单元区域中形成牺牲图案之后获得的所得结构的侧面露出。利用支持存储节点的牺牲图案，移除单元区域中的隔离层。然后去除牺牲图案。

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