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11. 发明授权

US6153500A Atomic wire and atomic wire switch 失效
标题翻译：原子线和原子线开关
公开(公告)号：US6153500A
公开(公告)日：2000-11-28
申请号：US521921
申请日：2000-03-09
申请人： Satoshi Watanabe , Yoshimasa Murayama , Yoshimasa A. Ono , Tomihiro Hashizume , Yasuo Wada
发明人： Satoshi Watanabe , Yoshimasa Murayama , Yoshimasa A. Ono , Tomihiro Hashizume , Yasuo Wada
IPC分类号： H01L21/3205 , H01L21/20 , H01L29/06 , H01L29/66 , H01L29/80 , H01L49/00
CPC分类号： H01L49/006 , Y10S438/962 , Y10S977/936
摘要： A fine wire is fabricated by supplying metal atoms to one row or a plurality of rows formed by extraction of terminated atoms or molecules to the surface of substance made non-conductive by terminating all dangling bonds on the surface thereof with atoms or molecules. The conductivity of the fine wire can be attained by supplying metal atoms larger in number to that required for just terminating dangling bonds formed by extraction of terminated atoms or molecules.
摘要翻译：通过将金属原子提供到通过用终止的原子或分子的表面上的所有悬挂键而将终止的原子或分子提取到不导电的物质的表面形成的一行或多行中来制造细线。细线的导电性可以通过提供数量更多的金属原子与通过提取封端的原子或分子形成的悬挂键刚刚终止所需的金属原子来实现。

12. 发明授权

US5586752A Load chain retainment for a chain block 失效
标题翻译：用于链块的负载链保持
公开(公告)号：US5586752A
公开(公告)日：1996-12-24
申请号：US270659
申请日：1994-07-05
申请人： Yasuo Wada , Yoshio Ueno
发明人： Yasuo Wada , Yoshio Ueno
IPC分类号： B66D3/04 , B66D3/16 , B66D1/30
CPC分类号： B66D3/16
摘要： A manual chain block having a hand wheel and hand chain on one axial end and a load wheel and load chain on the other axial end. A no-load side chain guide (44) of the load chain guides (43, 44)is provided with an anchoring portion (45) for anchoring a no-load end portion of a load chain (4). An anchoring portion (45) is provided with a load receiving portion (46) for receiving a load acting on the no-load side end portion.
摘要翻译：手动链块在一个轴向端具有手轮和手链，另一个轴向端部具有负载轮和负载链。负载链条引导件（43,44）的空载侧链条导向件（44）设置有用于锚定负载链（4）的空载端部的锚定部分（45）。锚定部分（45）设置有用于接收作用在空载侧端部上的负载的负载接收部分（46）。

13. 发明授权

US5561300A Atomic switching devices and logical circuits 失效
标题翻译：原子开关器件和逻辑电路
公开(公告)号：US5561300A
公开(公告)日：1996-10-01
申请号：US994968
申请日：1992-12-22
申请人： Yasuo Wada , Seiichi Kondo , Tsuyoshi Uda , Masukazu Igarashi , Hiroshi Kajiyama , Hisashi Nagano , Akito Sakurai , Tsuneo Ichiguchi
发明人： Yasuo Wada , Seiichi Kondo , Tsuyoshi Uda , Masukazu Igarashi , Hiroshi Kajiyama , Hisashi Nagano , Akito Sakurai , Tsuneo Ichiguchi
IPC分类号： G01Q90/00 , G11B9/00 , G11C11/34 , G11C13/00 , G11C19/00 , H01L27/06 , H01L27/085 , H01L49/00 , H03F3/04 , H03K17/51 , H03K17/54 , H03K17/56 , H03K19/02 , H03K19/08 , H01J37/30 , H02B1/24
CPC分类号： B82Y15/00 , B82Y10/00 , G11B9/14 , G11B9/1463 , G11C11/34 , G11C13/00 , G11C19/00 , H01L27/06 , H01L27/085 , H01L49/00 , H01L49/006 , H03F3/04 , H03K17/51 , H03K17/545 , H03K17/56 , H03K19/02 , H03K19/08 , G11C13/025 , G11C2213/81 , G11C2216/08 , Y10S977/94 , Y10T307/74 , Y10T307/937
摘要： In an atomic switch, opposite ends of an atom wire are connected to an input and output, and a switching gate is connected to a switching power supply. An input signal is outputted when a switching atom is connected to the atom wire, whereas an input signal is not outputted when the switching atom is moved to disconnect from the atom wire. There are provided an atom wire having a plurality of atoms arranged in a line or in a plurality of lines, in a ring shape, or in a curved line, and a switching gate made of an atom wire. The atom wire is switched by the field effect of the switching gate.
摘要翻译：在原子开关中，原子线的相对端连接到输入和输出，并且开关栅极连接到开关电源。当切换原子连接到原子线时输出输入信号，而当切换原子移动以与原子线分离时，输出信号不输出。提供一种原子线，其具有以线状或多条排列成环状或曲线的多个原子以及由原子线构成的开关栅极。原子线由开关栅极的场效应切换。

14. 发明授权

US5510614A Solid surface observation method and apparatus therefor, and electronic apparatus formed of the solid surface observation apparatus and method of forming the electronic apparatus 失效
标题翻译：固体表面观察方法及其设备，以及由固体表面观察装置和形成电子设备的方法形成的电子设备
公开(公告)号：US5510614A
公开(公告)日：1996-04-23
申请号：US184068
申请日：1994-01-21
申请人： Munehisa Mitsuya , Yasuo Wada , Seiji Heike , Seiichi Kondo
发明人： Munehisa Mitsuya , Yasuo Wada , Seiji Heike , Seiichi Kondo
IPC分类号： C04B41/00 , C04B41/80 , C23C26/00 , G01Q30/02 , G01Q60/10 , G11B9/00 , H01J37/00
CPC分类号： G01Q30/02 , B82Y35/00 , C04B41/0027 , C04B41/0045 , C04B41/009 , C04B41/80 , C23C26/00 , G01Q60/10 , B82Y10/00 , C04B2111/94 , G11B9/14 , G11B9/149 , H01J2237/31732 , Y10S977/855
摘要： A surface of an insulator or semiconductor substrate is irradiated with a beam such as an electron beam, an electromagnetic wave beam, an ion beam, etc. to excite carriers so as to form an electrical conductive layer on the surface of and in the inside of the substrate to thereby make it possible to perform observation and micro working on the insulator by using a scanning tunneling microscope.
摘要翻译：用电子束，电磁波束，离子束等光束照射绝缘体或半导体基板的表面，以激励载流子，以在其表面上和内部形成导电层从而能够通过使用扫描隧道显微镜对绝缘体进行观察和微加工。

15. 发明授权

US5132752A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US5132752A
公开(公告)日：1992-07-21
申请号：US658463
申请日：1991-02-22
申请人： Yasunari Umemoto , Nobuo Kotera , Kiichi Ueyanagi , Norikazu Hashimoto , Nobutoshi Matsunaga , Yasuo Wada , Shoji Shukuri , Noboru Masuda , Takehisa Hayashi , Hirotoshi Tanaka
发明人： Yasunari Umemoto , Nobuo Kotera , Kiichi Ueyanagi , Norikazu Hashimoto , Nobutoshi Matsunaga , Yasuo Wada , Shoji Shukuri , Noboru Masuda , Takehisa Hayashi , Hirotoshi Tanaka
IPC分类号： H01L29/10 , H01L29/812
CPC分类号： H01L29/1075 , H01L29/812 , Y10S257/903
摘要： A field effect transistor formed on a semi-insulator or compound semiconductor substrate comprises a first semiconductor layer forming a source region, a drain region and a channel layer, and a second semiconductor layer having a reverse conduction type to that of the first semiconductor layer. The second semiconductor layer is doped so that it will be totally depleted. Therefore, a portion of the second semiconductor layer adjacent to the substrate will remain conductive. The field effect transistor with this structure prevents the short channel effect and the soft error due to .alpha.-particles. A threshold voltage control arrangement is also provided using the feature of a control electrode coupled to the second semiconductor layer and a feedback arrangement.
摘要翻译：形成在半绝缘体或化合物半导体衬底上的场效应晶体管包括形成源极区，漏极区和沟道层的第一半导体层以及具有与第一半导体层相反的导通型的第二半导体层。第二半导体层被掺杂以使其完全耗尽。因此，与衬底相邻的第二半导体层的一部分将保持导电。具有这种结构的场效应晶体管防止短沟道效应和由于α-粒子引起的软误差。还使用耦合到第二半导体层的控制电极的特征和反馈装置来提供阈值电压控制装置。

16. 发明授权

US5129439A Tire and rim assembly and tire for use therein 失效
标题翻译：轮胎和轮辋组件及轮胎
公开(公告)号：US5129439A
公开(公告)日：1992-07-14
申请号：US578607
申请日：1990-09-07
申请人： Yasuo Wada , Hiroshi Itoh
发明人： Yasuo Wada , Hiroshi Itoh
IPC分类号： B60B21/10 , B60B21/00 , B60B21/02 , B60C15/02 , B60C15/024 , B60C15/06
CPC分类号： B60C15/0226 , B60C15/024
摘要： A tire and an assembly of a rim and a tire are disclosed. The rim has a pair of rim bases, a hump formed axially inside each rim base, and an annular groove formed axially inside each hump.The tire comprises a pair of beads having a bead base seated on the rim base, a pair of bead cores disposed one in each bead, at least one of the beads having a toe and a hump groove disposed between the toe and the bead base, wherein, the tip of the toe is located radially outside a bead base line, and under such condition; that the tire is inflated to a normal internal pressure, the hump groove and the tip of the toe are spaced apart from the hump and the annular groove, and the distance L in the radial direction between the radially outermost point RT of the hump and the radially outermost point PT of the hump groove is not less than 0.5 mm and not more than 2.0 mm.

17. 发明授权

US5070921A Tire and rim assembly comprising a non-contacting bead toe 失效
标题翻译：轮胎和RIM装配包括非接触式珠子
公开(公告)号：US5070921A
公开(公告)日：1991-12-10
申请号：US401164
申请日：1989-08-31
申请人： Yasuo Wada , Hiroshi Ito
发明人： Yasuo Wada , Hiroshi Ito
IPC分类号： B60B21/10 , B60B21/00 , B60B21/02 , B60C15/02 , B60C15/024 , B60C15/06
CPC分类号： B60C15/0226 , B60C15/024
摘要： A tire and an assembly of a rim and a tire are disclosed. The rim has a pair of rim bases, a hump formed axially inside each rim base, and an annular groove formed axially inside each hump.The tire comprises a pair of beads having a bead base seated on the rim base, a pair of bead cores disposed one in each bead, at least one of the beads having a toe and a hump groove disposed between the toe and the bead base, wherein the tip of the toe is located radially outside a bead base line, and under such condition that the tire is inflated to a normal internal pressure, the hump groove and the tip of the toe are spaced apart from the hump and the annular groove, and the distance L in the radial direction between the radially outermost point RT of the hump and the radially outermost point PT of the hump groove is not less than 0.5 mm and not more than 2.0 mm.

18. 发明授权

US4860071A Semiconductor memory using trench capacitor 失效
标题翻译：半导体存储器采用沟槽电容器
公开(公告)号：US4860071A
公开(公告)日：1989-08-22
申请号：US157129
申请日：1988-02-10
申请人： Hideo Sunami , Tokuo Kure , Atsushi Hiraiwa , Yasuo Wada
发明人： Hideo Sunami , Tokuo Kure , Atsushi Hiraiwa , Yasuo Wada
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/945 , H01L27/10829
摘要： A memory is disclosed which uses a microcapacitor as a data storage portion. The microcapacitor uses as its main electrode surface the side wall of a first trench formed on a semiconductor substrate, and is fabricated by diffusing an impurity from a second diffusion trench adjacent to the first trench by setting the shapes and diffusion conditions of the first and second trenches so that the tip of the diffusion layer reaches the side wall of the first trench. The capacitor uses the diffusion layer as one of the electrodes. An insulating film is deposited on the side wall of the first trench and an electrode as the other electrode of the capacitor is deposited on this insulating film. The memory can reduce a leakage current between memory cells by connecting the capacitor to a transistor fabricated in the same semiconductor substrate, and can be formed within a limited space.
摘要翻译：公开了一种使用微电容器作为数据存储部分的存储器。微电容器使用形成在半导体衬底上的第一沟槽的侧壁作为其主电极表面，并且通过将第一和第二沟槽的形状和扩散条件设定为第一和第二沟槽的形状和扩散条件，沟槽，使得扩散层的尖端到达第一沟槽的侧壁。电容器使用扩散层作为电极之一。绝缘膜沉积在第一沟槽的侧壁上，并且作为电容器的另一个电极的电极沉积在该绝缘膜上。存储器可以通过将电容器连接到在同一半导体衬底中制造的晶体管来减小存储器单元之间的漏电流，并且可以在有限的空间内形成。

19. 发明授权

US4716127A Method of implanting spatially controlled P-N junctions by focused ion beams containing at least two species 失效
标题翻译：通过包含至少两种物种的聚焦离子束注入空间控制的P-N结的方法
公开(公告)号：US4716127A
公开(公告)日：1987-12-29
申请号：US852317
申请日：1986-04-15
申请人： Shoji Shukuri , Masao Tamura , Yasuo Wada , Yoshihisa Fujisaki
发明人： Shoji Shukuri , Masao Tamura , Yasuo Wada , Yoshihisa Fujisaki
IPC分类号： H01J37/317 , H01L21/265 , H01L21/8252 , G01N23/00
CPC分类号： H01L21/265 , H01L21/26546 , H01L21/8252
摘要： A desired part of a workpiece is irradiated with a focused ion beam which contains at least two species of impurity ions to-be-implanted exhibiting different spacial distributions of ion current densities.Thus, regions respectively implanted with different species of impurity ions can be formed in a predetermined positional relationship at high precision.
摘要翻译：用聚焦离子束照射工件的所需部分，该聚焦离子束含有离子电流密度不同的空间分布的待植入的至少两种杂质离子种类。因此，可以高精度地以预定的位置关系形成分别注入不同种类的杂质离子的区域。

20. 发明授权

US07168470B2 Pneumatic radial tire 有权
标题翻译：气动子午线轮胎
公开(公告)号：US07168470B2
公开(公告)日：2007-01-30
申请号：US10416581
申请日：2002-06-10
申请人： Naoki Yukawa , Kazumi Yamazaki , Takashi Tanaka , Yasuo Wada , Makoto Hizume
发明人： Naoki Yukawa , Kazumi Yamazaki , Takashi Tanaka , Yasuo Wada , Makoto Hizume
IPC分类号： B60C9/18 , B60C9/22
CPC分类号： B60C9/2204 , B60C2009/2219 , Y10T152/10765 , Y10T152/10783 , Y10T152/1081
摘要： Inside a tread portion and outside a belt layer along the radius direction thereof is formed a belt layer comprising a band ply formed by winding spirally a tape- and belt-form ply wherein one ore plural band cords are stretched and arranged to be embedded in a topping rubber. In this band ply, the elongation resistance value K (unit: N′ cord number/cm) specified by the following equation is set within the range of 99 to 700 when the sectional area of the band cord or each of the band cords is represented by S (unit: mm2), the modulus thereof when the elongation thereof is 2% is represented by M (unit: N/mm2), the band cord arrangement density per cm of the band ply is represented by D (unit: cord number/cm). K=S×M×D/100 (1)
摘要翻译：在胎面部分和沿着其半径方向的带束层之外的带状层中形成带束层，该带束层包括通过螺旋卷绕带状带束层而形成的带束层，其中一个多个带状帘线被拉伸并布置成嵌入顶部橡胶。在该带束帘布层中，当带带或每条带帘线的截面积被表示时，由下式规定的伸长电阻值K（单位：N'帘线数/ cm）设定在99〜700的范围内通过S（单位：mm 2），其伸长率为2％时的模量由M（单位：N / mm 2）表示，带束布置带状帘布层的每厘米密度由D（单位：帘线编号/ cm）表示。 <？in-line-formula description =“In-line Formulas”end =“lead”？> K = SxMxD / 100（1）<？in-line-formula description =“In-line Formulas”end =“tail” ？>

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