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11. 发明授权

US06669538B2 Pad cleaning for a CMP system 失效
标题翻译： CMP系统的垫清洁
公开(公告)号：US06669538B2
公开(公告)日：2003-12-30
申请号：US09512745
申请日：2000-02-24
申请人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
发明人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
IPC分类号： B24B100
CPC分类号： B24B53/017
摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.
摘要翻译：本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

12. 发明授权

US07022608B2 Method and composition for the removal of residual materials during substrate planarization 失效
公开(公告)号：US07022608B2
公开(公告)日：2006-04-04
申请号：US10419440
申请日：2003-04-21
申请人： Lizhong Sun , Stan Tsai , Shijian Li
发明人： Lizhong Sun , Stan Tsai , Shijian Li
IPC分类号： H01L21/302
CPC分类号： C09G1/02
摘要： A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.

13. 发明授权

US06858540B2 Selective removal of tantalum-containing barrier layer during metal CMP 失效
标题翻译：在金属CMP期间选择性去除含钽阻挡层
公开(公告)号：US06858540B2
公开(公告)日：2005-02-22
申请号：US10215521
申请日：2002-08-08
申请人： Lizhong Sun , Stan Tsai , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Stan Tsai , Shijian Li , Fred C. Redeker
IPC分类号： B24B1/00 , C09K13/00 , C11D1/00 , H01L21/285 , H01L21/302 , H01L21/321 , H01L21/768
CPC分类号： H01L21/3212 , H01L21/28568 , H01L21/7684
摘要： A method for performing chemical-mechanical polishing/planarization providing highly selective, rapid removal of a Ta-containing barrier layer from a workpiece surface, such as a semiconductor wafer including a damascene-type Cu-based metallization pattern in-laid in a dielectric layer and including a Ta-containing metal diffusion barrier layer, comprises applying an aqueous liquid composition to the workpiece surface during CMP or to the polishing pad utilized for performing the CMP, the composition comprising at least one reducing agent for reducing transition metal ions to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor, and water, and optionally includes ions of at least one transition metal, e.g., Cu and Fe ions. According to another embodiment, the aqueous liquid composition contains Ag ions and the at least one reducing agent is omitted.
摘要翻译：一种用于进行化学机械抛光/平面化的方法，其提供从工件表面高度选择性地快速去除含Ta阻挡层，例如包括嵌入在介电层中的镶嵌型Cu基金属化图案的半导体晶片并且包括含Ta的金属扩散阻挡层，包括在CMP期间将水性液体组合物施加到工件表面或用于执行CMP的抛光垫，所述组合物包含至少一种还原剂以将过渡金属离子还原成低级价态，至少一种pH调节剂，至少一种金属腐蚀抑制剂和水，并且任选地包括至少一种过渡金属（例如Cu和Fe离子）的离子。根据另一个实施方案，含水液体组合物含有Ag离子，并且省略了至少一种还原剂。

14. 发明授权

US06524167B1 Method and composition for the selective removal of residual materials and barrier materials during substrate planarization 失效
标题翻译：用于在衬底平面化期间选择性去除残留材料和阻挡材料的方法和组成
公开(公告)号：US06524167B1
公开(公告)日：2003-02-25
申请号：US09698863
申请日：2000-10-27
申请人： Stan Tsai , Lizhong Sun , Shijian Li
发明人： Stan Tsai , Lizhong Sun , Shijian Li
IPC分类号： B24B100
CPC分类号： C09G1/02
摘要： A method and composition for selective removal of a conductive material residue and a portion of the barrier layer from a substrate surface. The composition includes a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. The method comprises selective removal of conductive material residue and a portion of the barrier layer from a substrate surface by applying a composition to a polishing pad, the composition including a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. In one aspect, the method comprises providing a substrate comprising a dielectric layer with feature definitions formed therein, a barrier layer conformally deposited on the dielectric layer and in the feature definitions formed therein, and a copper containing material deposited on the barrier layer and filling the feature definitions formed therein, polishing the substrate to substantially remove the conductive material, and polishing the substrate with a composition comprising a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water to remove conductive material residue and a portion of the barrier layer.
摘要翻译：用于从衬底表面选择性去除导电材料残余物和阻挡层的一部分的方法和组合物。组合物包括螯合剂，氧化剂，缓蚀剂，磨料颗粒和水。该组合物还可包含一种或多种pH调节剂和/或一种或多种pH缓冲剂。该方法包括通过将组合物施加到抛光垫上来从基材表面选择性地除去导电材料残余物和阻挡层的一部分，该组合物包括螯合剂，氧化剂，腐蚀抑制剂，磨料颗粒和水。该组合物还可包含一种或多种pH调节剂和/或一种或多种pH缓冲剂。在一个方面，该方法包括提供包括其中形成有特征定义的电介质层的基底，保形地沉积在电介质层上和在其中形成的特征定义中的阻挡层和沉积在阻挡层上的含铜材料，在其中形成的特征定义，抛光基底以基本上去除导电材料，并用包含螯合剂，氧化剂，腐蚀抑制剂，磨料颗粒和水的组合物抛光基底以除去导电材料残余物和一部分屏障层。

15. 发明授权

US07012025B2 Tantalum removal during chemical mechanical polishing 失效
公开(公告)号：US07012025B2
公开(公告)日：2006-03-14
申请号：US09755717
申请日：2001-01-05
申请人： Lizhong Sun , Stan D. Tsai , Shijian Li , Feng Liu
发明人： Lizhong Sun , Stan D. Tsai , Shijian Li , Feng Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

16. 发明申请

US20070066200A9 Perforation and grooving for polishing articles 审中-公开
标题翻译：用于抛光物品的穿孔和开槽
公开(公告)号：US20070066200A9
公开(公告)日：2007-03-22
申请号：US11418557
申请日：2006-05-05
申请人： Shijian Li , Liang-Yuh Chen , Alain Duboust
发明人： Shijian Li , Liang-Yuh Chen , Alain Duboust
IPC分类号： H01L21/306 , B24D11/00
CPC分类号： B24B37/24 , B23H5/08 , B24B57/02
摘要： Methods, articles of manufacture, and apparatus are provided for depositing and planarizing one or more layers of material on a substrate, or combinations thereof, are disclosed. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of perforations formed in at least a portion of the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.
摘要翻译：提供了方法，制品和装置，用于沉积和平坦化衬底上的一层或多层材料，或其组合。在一个实施例中，提供了用于抛光衬底的制品，其包括具有抛光表面的抛光制品，在抛光制品的至少一部分中形成的用于材料流动的多个穿孔，以及多个槽，在抛光面上。制造物品可以用于处理基材的方法，包括将基底定位在含有抛光制品的电解质溶液中，任选地通过电化学沉积方法将材料沉积在基底上，并用抛光制品抛光基底。

17. 发明申请

US20060217049A1 Perforation and grooving for polishing articles 审中-公开
标题翻译：用于抛光物品的穿孔和开槽
公开(公告)号：US20060217049A1
公开(公告)日：2006-09-28
申请号：US11418557
申请日：2006-05-06
申请人： Shijian Li , Liang-Yuh Chen , Alain Duboust
发明人： Shijian Li , Liang-Yuh Chen , Alain Duboust
IPC分类号： H01L21/306 , B24D11/00
CPC分类号： B24B37/24 , B23H5/08 , B24B57/02
摘要： Methods, articles of manufacture, and apparatus are provided for depositing and planarizing one or more layers of material on a substrate, or combinations thereof, are disclosed. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of perforations formed in at least a portion of the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.
摘要翻译：提供了方法，制品和装置，用于沉积和平坦化衬底上的一层或多层材料，或其组合。在一个实施例中，提供了用于抛光衬底的制品，其包括具有抛光表面的抛光制品，在抛光制品的至少一部分中形成的用于材料流动的多个穿孔，以及多个槽，在抛光面上。制造物品可以用于处理基材的方法，包括将基底定位在含有抛光制品的电解质溶液中，任选地通过电化学沉积方法将材料沉积在基底上，并用抛光制品抛光基底。

18. 发明授权

US06653242B1 Solution to metal re-deposition during substrate planarization 失效
标题翻译：在衬底平面化期间金属再沉积的解决方案
公开(公告)号：US06653242B1
公开(公告)日：2003-11-25
申请号：US09608078
申请日：2000-06-30
申请人： Lizhong Sun , Stan D Tsai , Shijian Li , John M White
发明人： Lizhong Sun , Stan D Tsai , Shijian Li , John M White
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , C09G1/04
摘要： A method and composition for planarizing a substrate. The composition includes one or more surfactants, including one or more anionic surfactants, Zweitter-ionic surfactants, dispersers, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more surfactants of anionic surfactants, Zweitter-ionic surfactants, or combinations thereof.
摘要翻译：一种用于平坦化衬底的方法和组合物。组合物包括一种或多种表面活性剂，包括一种或多种阴离子表面活性剂，Zweitter离子表面活性剂，分散剂或其组合，一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂和去离子水。组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。该方法包括使用包含一种或多种阴离子表面活性剂，Zweitter离子型表面活性剂或其组合的表面活性剂的组合物平面化底物。

19. 发明授权

US06592742B2 Electrochemically assisted chemical polish 失效
公开(公告)号：US06592742B2
公开(公告)日：2003-07-15
申请号：US09905315
申请日：2001-07-13
申请人： Lizhong Sun , Shijian Li
发明人： Lizhong Sun , Shijian Li
IPC分类号： B23H300
CPC分类号： B24B37/24 , B23H3/00 , B23H5/08 , C25F3/16 , C25F7/00
摘要： A method of chemically polishing a metal layer on a substrate is provided. The metal layer is chemically polished using an electrochemical polishing (ECP) process. In the ECP process, the substrate is immersed in a chemical polishing solution including a surfactant. The surfactant in the polishing solution covers the surface of the substrate such that only topographic portions of the substrate surface are exposed to the chemical polishing solution. Thereafter, an electrical potential applied to the substrate removes topographic portions of the substrate that are exposed to the polishing solution.

20. 发明授权

US07220322B1 Cu CMP polishing pad cleaning 失效
标题翻译： Cu CMP抛光垫清洗
公开(公告)号：US07220322B1
公开(公告)日：2007-05-22
申请号：US09645690
申请日：2000-08-24
申请人： Lizhong Sun , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Shijian Li , Fred C. Redeker
IPC分类号： B08B7/04 , H01L21/302
CPC分类号： B24B53/017
摘要： A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.
摘要翻译：在平坦化晶片之后，将抛光垫清除为Cu CMP副产物，通过向抛光垫表面施加包含约0.1至约3.0重量％的组合物的组合物来减少垫玻璃。％的至少一种具有一个或多个胺或酰胺基团的有机化合物，酸或碱的量足以将组合物的pH调节至约5.0至约12.0，其余为水。实施例包括通过以约100至约600ml / min的流速施加pH为约5.0至约12.0的溶液来旋转抛光垫的原位清洁。在研磨具有含Cu表面的晶片之后约3至约20秒，然后通过用水高压冲洗从抛光垫除去清洁溶液。

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