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11. 发明申请

US20110216554A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110216554A1
公开(公告)日：2011-09-08
申请号：US12876675
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
IPC分类号： F21V7/22
CPC分类号： F21V7/22
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。发光器件具有发射激光束的半导体激光二极管。该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射，导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

12. 发明申请

US20110051769A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110051769A1
公开(公告)日：2011-03-03
申请号：US12719468
申请日：2010-03-08
申请人： Maki SUGAI , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
发明人： Maki SUGAI , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
IPC分类号： H01S5/323 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/16 , H01S5/164 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S2301/18
摘要： A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion
摘要翻译：一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。第二半导体层包括脊部和宽部。沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。沿着第二方向的宽部的宽度比脊部宽。沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

13. 发明授权

US09093588B2 Semiconductor light emitting device with an aluminum containing layer formed thereon 有权
标题翻译：其上形成有铝层的半导体发光器件
公开(公告)号：US09093588B2
公开(公告)日：2015-07-28
申请号：US13032907
申请日：2011-02-23
申请人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/26 , H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。第一部分的带隙能量小于第二部分的带隙能量。

14. 发明授权

US08729575B2 Semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08729575B2
公开(公告)日：2014-05-20
申请号：US13215628
申请日：2011-08-23
申请人： Jongil Hwang , Hung Hung , Yasushi Hattori , Rei Hashimoto , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Hung Hung , Yasushi Hattori , Rei Hashimoto , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/00 , H01L31/072
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/3063 , H01S2304/04
摘要： The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.
摘要翻译：根据实施例的半导体发光器件包括N型氮化物半导体层，设置在N型氮化物半导体层上的氮化物半导体有源层和设置在有源层上的P型氮化物半导体层。 P型氮化物半导体层包括氮化镓铝层。氮化镓铝层中的铟浓度在1E18原子/ cm3至1E20原子/ cm3之间。碳浓度等于或小于6E17原子/ cm3。当镁浓度用X表示，受主浓度用Y表示时，Y> {（ - 5.35e19）2-（X-2.70e19）2} 1 / 2-4.63e19成立。

15. 发明授权

US07985981B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07985981B2
公开(公告)日：2011-07-26
申请号：US12638354
申请日：2009-12-15
申请人： Rei Hashimoto , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
发明人： Rei Hashimoto , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/58
CPC分类号： H01L33/507 , H01L33/644 , H01S5/02292 , H01S5/32341
摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.
摘要翻译：提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件荧光体层的。

16. 发明申请

US20110157864A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110157864A1
公开(公告)日：2011-06-30
申请号：US12876774
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Maki Sugai , Rei Hashimoto
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Maki Sugai , Rei Hashimoto
IPC分类号： F21V9/16
CPC分类号： F21K9/68 , G02F1/133615 , G02F2001/133614
摘要： According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.
摘要翻译：根据实施例，提供了一种发光器件。发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。

17. 发明申请

US20120273794A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光装置，散热器和制造半导体发光装置的方法
公开(公告)号：US20120273794A1
公开(公告)日：2012-11-01
申请号：US13407191
申请日：2012-02-28
申请人： Shinji SAITO , Shinya Nunoue , Rei Hashimoto
发明人： Shinji SAITO , Shinya Nunoue , Rei Hashimoto
IPC分类号： H01L33/32 , H01L33/00 , H01L29/06 , H01L33/20
CPC分类号： H01L33/24 , B82Y20/00 , H01S5/0217 , H01S5/3201 , H01S5/3211 , H01S5/3428 , H01S5/34333 , H01S5/4037 , H01S5/4056 , H01S2301/173 , H01S2301/176 , H01S2304/02 , H01S2304/04
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first layer has a first upper surface and a first side surface. The active layer has a first portion covering the first upper surface and having a second upper surface, and a second portion covering the first side surface and having a second side surface. The second layer has a third portion covering the second upper surface, and a fourth portion covering the second side surface. The first and second layers include a nitride semiconductor. The first portion along a stacking direction has a thickness thicker than the second portion along a direction from the first side surface toward the second side surface. The third portion along the stacking direction has a thickness thicker than the fourth portion along the direction.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，有源层和第二半导体层。第一层具有第一上表面和第一侧面。有源层具有覆盖第一上表面并具有第二上表面的第一部分和覆盖第一侧表面并具有第二侧表面的第二部分。第二层具有覆盖第二上表面的第三部分和覆盖第二侧表面的第四部分。第一层和第二层包括氮化物半导体。沿着层叠方向的第一部分沿着从第一侧面朝向第二侧面的方向具有比第二部分厚的厚度。沿堆叠方向的第三部分沿着该方向具有比第四部分厚的厚度。

18. 发明授权

US08068704B2 Optical waveguide circuit and multi-core central processing unit using the same 有权
标题翻译：光波导电路和多核心中央处理单元采用相同的方式
公开(公告)号：US08068704B2
公开(公告)日：2011-11-29
申请号：US12393633
申请日：2009-02-26
申请人： Rei Hashimoto , Haruhiko Yoshida , Mizunori Ezaki
发明人： Rei Hashimoto , Haruhiko Yoshida , Mizunori Ezaki
IPC分类号： G02B6/12
CPC分类号： G02B6/1228 , G02B6/125 , G02B2006/12061
摘要： An optical waveguide circuit includes: a lower cladding layer formed on a substrate; a first optical waveguide formed on the lower cladding layer so as to partition the lower cladding layer into a first portion and a second portion; a second optical waveguide formed on the first portion, the second optical waveguide including a tip end portion directed toward a side face of the first optical waveguide, the tip end portion being narrowed in a tapered manner; and a third optical waveguide formed on the second portion, the third optical waveguide including a tip end portion directed toward the tip end portion of the second optical waveguide, a tip end portion of the third optical waveguide being narrowed in a tapered manner.
摘要翻译：光波导电路包括：形成在基板上的下包层; 第一光波导，其形成在下包层上，以将下包层分隔成第一部分和第二部分; 形成在所述第一部分上的第二光波导，所述第二光波导包括朝向所述第一光波导的侧面的前端部，所述尖端部以锥形变窄; 以及形成在所述第二部分上的第三光波导，所述第三光波导包括朝向所述第二光波导的前端部的前端部，所述第三光波导的前端部以锥形变窄。

19. 发明授权

US07276735B2 Laminated semiconductor substrate and optical semiconductor element 有权
标题翻译：层压半导体衬底和光学半导体元件
公开(公告)号：US07276735B2
公开(公告)日：2007-10-02
申请号：US10884141
申请日：2004-07-02
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
IPC分类号： H01L29/201
CPC分类号： H01L33/32 , H01L33/06
摘要： A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of InjGa1-jAs1-kNk (0≦j≦1, 0.002≦k≦0.05) formed on the first surface of the substrate, a first conductive type clad layer formed on the buffer layer, an active layer formed on the first conductive type clad layer and comprising a well layer of InzGa1-zAs (0≦z≦1), the well layer having a smaller bandgap than the first conductive type clad layer, the active layer having a thickness of more than its critical thickness for the substrate based upon equilibrium theories, and a second conductive type clad layer formed on the active layer and having a larger bandgap than the well layer.
摘要翻译：使用GaAs衬底提供了用于长波长的低成本高性能光学半导体元件。该光学半导体元件包括具有彼此相对的第一表面和第二表面的GaAs衬底，具有第一表面和第二表面的第二表面，形成在基板的第一表面上的1-k N N（0 <= j <= 1，0.002 <= k <= 0.05），形成在基板的第一表面上的第一导电型覆盖层所述缓冲层，形成在所述第一导电型覆盖层上的有源层，并且包括阱层，所述阱层具有In（z）），所述阱层具有比所述第一导电型覆盖层更小的带隙，所述有源层的厚度大于其基于平衡理论的基板的临界厚度，以及形成在所述有源层上的第二导电型覆盖层和具有比阱层更大的带隙。

20. 发明授权

US07830937B2 Surface emitting type optical semiconductor device 有权
标题翻译：表面发射型光半导体器件
公开(公告)号：US07830937B2
公开(公告)日：2010-11-09
申请号：US12191181
申请日：2008-08-13
申请人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
发明人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18394 , H01S5/2063
摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.
摘要翻译：可以将电流基本均匀地注入电流限制区域。表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。

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