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1. 发明申请

US20110216554A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110216554A1
公开(公告)日：2011-09-08
申请号：US12876675
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
IPC分类号： F21V7/22
CPC分类号： F21V7/22
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。发光器件具有发射激光束的半导体激光二极管。该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射，导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

2. 发明申请

US20110216798A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110216798A1
公开(公告)日：2011-09-08
申请号：US12873821
申请日：2010-09-01
申请人： Maki SUGAI , Shinji SAITO , Rei HASHIMOTO , Yasushi HATTORI , Jongil HWANG , Masaki TOHYAMA , Shinya NUNOUE
发明人： Maki SUGAI , Shinji SAITO , Rei HASHIMOTO , Yasushi HATTORI , Jongil HWANG , Masaki TOHYAMA , Shinya NUNOUE
IPC分类号： H01S5/22 , H01S5/323 , H01L33/30
CPC分类号： H01L33/30 , H01S5/22 , H01S5/323
摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.
摘要翻译：实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。凹槽的深度小于GaN衬底的厚度。该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下。

3. 发明申请

US20110157864A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110157864A1
公开(公告)日：2011-06-30
申请号：US12876774
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Maki Sugai , Rei Hashimoto
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Maki Sugai , Rei Hashimoto
IPC分类号： F21V9/16
CPC分类号： F21K9/68 , G02F1/133615 , G02F2001/133614
摘要： According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.
摘要翻译：根据实施例，提供了一种发光器件。发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。

4. 发明申请

US20090185589A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20090185589A1
公开(公告)日：2009-07-23
申请号：US12408810
申请日：2009-03-23
申请人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
发明人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
IPC分类号： H01S3/10 , F21V9/16 , G02F1/35
CPC分类号： H01L33/507 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/021 , H01S5/0213 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/327 , H01S5/34333 , H01S5/42 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.
摘要翻译：一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与激发光的波长不同的光的荧光材料，并且板状波长转换构件为整个发射可见光。

5. 发明申请

US20100246628A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100246628A1
公开(公告)日：2010-09-30
申请号：US12729636
申请日：2010-03-23
申请人： Yasushi HATTORI , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
发明人： Yasushi HATTORI , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
IPC分类号： H01S5/026
CPC分类号： H01S5/02296 , H01S5/005 , H01S5/021 , H01S5/0213 , H01S5/02216 , H01S5/0228 , H01S5/32341 , H01S5/327
摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.
摘要翻译：公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上，可见光发射器与封装件接触。

6. 发明申请

US20120106127A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120106127A1
公开(公告)日：2012-05-03
申请号：US13285686
申请日：2011-10-31
申请人： Yasushi HATTORI , Masaki TOHYAMA , Junichi KINOSHITA , Yoji KAWASAKI , Yuji TAKEDA , Misaki UENO
发明人： Yasushi HATTORI , Masaki TOHYAMA , Junichi KINOSHITA , Yoji KAWASAKI , Yuji TAKEDA , Misaki UENO
IPC分类号： F21V8/00 , F21V9/16
CPC分类号： G02B6/001 , F21K9/232 , F21K9/61 , F21K9/68 , F21V3/00 , F21V7/005 , F21V7/22 , F21V9/30 , F21W2131/103 , F21Y2115/10 , F21Y2115/30 , G02B6/005
摘要： A light emitting device includes a light source capable of emitting emission light, a first phosphor layer and an optical waveguide. A first phosphor layer has at least a first surface and a second surface on an opposite side of the first surface, extends in a light guiding direction, and is capable of absorbing the emission light and emitting first wavelength converted light having a longer wavelength than the emission light. The optical waveguide has a reflector. And the optical waveguide has an input surface of the emission light, a reflection surface being in contact with the first surface of the first phosphor layer and provided on a surface of the reflector, and an output surface spaced from the first phosphor layer. The reflection surface and the output surface extend in the light guiding direction.
摘要翻译：发光器件包括能够发射发射光的光源，第一荧光体层和光波导。第一荧光体层具有在第一表面的相对侧上的至少第一表面和第二表面，在导光方向上延伸，并且能够吸收发光并发射波长比第一波长长的波长的第一波长转换光发射光。光波导具有反射器。并且光波导具有发射光的输入表面，反射表面与第一荧光体层的第一表面接触并设置在反射器的表面上，以及与第一荧光体层间隔开的输出表面。反射面和输出面在导光方向上延伸。

7. 发明申请

US20070228390A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20070228390A1
公开(公告)日：2007-10-04
申请号：US11668218
申请日：2007-01-29
申请人： Yasushi HATTORI , Shinya Nunoue , Genichi Hatakoshi , Shinji Saito , Naomi Shida , Masahiro Yamamoto
发明人： Yasushi HATTORI , Shinya Nunoue , Genichi Hatakoshi , Shinji Saito , Naomi Shida , Masahiro Yamamoto
IPC分类号： H01L33/00
CPC分类号： H01L33/505 , H01L25/0753 , H01L33/54 , H01L33/56 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/00011 , H01L2924/01021 , H01L2924/01066 , H01L2924/09701 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/01049 , H01L2924/00012
摘要： A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.
摘要翻译：提供一种发光装置，其包括具有平面的基板，安装在基板的平面上的半导体发光元件，其发射从紫外线到可见光的范围内的光，第一透光层形成在基板上并覆盖半导体发光元件，形成在第一透光层上方并含有荧光体粒子和基体的荧光体层，以及形成在荧光体层的上方并与基板的平面接触的第二透光层。荧光体层的表面具有反射荧光体颗粒的形状的突起。

8. 发明申请

US20110101851A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110101851A1
公开(公告)日：2011-05-05
申请号：US12985955
申请日：2011-01-06
申请人： Iwao MITSUISHI , Shinya NUNOUE , Yasushi HATTORI
发明人： Iwao MITSUISHI , Shinya NUNOUE , Yasushi HATTORI
IPC分类号： H01J1/62
CPC分类号： H01L33/504 , H01L2224/45144 , H01L2224/48247 , H01L2924/00
摘要： A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.
摘要翻译：提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件，覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。透明树脂层具有拱形外形垂直横截面。层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。黄色荧光层具有比其端面部分的厚度大的顶部。

9. 发明申请

US20090058256A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20090058256A1
公开(公告)日：2009-03-05
申请号：US12143382
申请日：2008-06-20
申请人： Iwao MITSUISHI , Shinya NUNOUE , Yasushi HATTORI
发明人： Iwao MITSUISHI , Shinya NUNOUE , Yasushi HATTORI
IPC分类号： H01J1/62
CPC分类号： H01L33/504 , H01L2224/45144 , H01L2224/48247 , H01L2924/00
摘要： A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.
摘要翻译：提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件，覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。透明树脂层具有拱形外形垂直横截面。层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。黄色荧光层具有比其端面部分的厚度大的顶部。

10. 发明申请

US20130229106A1 LUMINESCENT MATERIAL 有权
标题翻译：发光材料
公开(公告)号：US20130229106A1
公开(公告)日：2013-09-05
申请号：US13601433
申请日：2012-08-31
申请人： Iwao MITSUISHI , Naotoshi MATSUDA , Yumi FUKUDA , Keiko ALBESSARD , Aoi OKADA , Masahiro KATO , Ryosuke HIRAMATSU , Yasushi HATTORI , Shinya NUNOUE
发明人： Iwao MITSUISHI , Naotoshi MATSUDA , Yumi FUKUDA , Keiko ALBESSARD , Aoi OKADA , Masahiro KATO , Ryosuke HIRAMATSU , Yasushi HATTORI , Shinya NUNOUE
IPC分类号： C09K11/77 , H05B33/12
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H05B33/12 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd formula 1 wherein x, a, b, c and d satisfy following condition: 0
摘要翻译：根据一个实施例，当在具有250至520nm的波长范围内的发射峰的光激发时，发光材料发射具有在550至590nm的波长范围内的发光峰的光。发光材料具有由下式1表示的组成。（Sr1-xEux）aSibAlOcNdformula 1其中x，a，b，c和d满足以下条件：0

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