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1. 发明申请

US20120007113A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120007113A1
公开(公告)日：2012-01-12
申请号：US13032907
申请日：2011-02-23
申请人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/26
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。第一部分的带隙能量小于第二部分的带隙能量。

2. 发明授权

US08649408B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08649408B2
公开(公告)日：2014-02-11
申请号：US12874440
申请日：2010-09-02
申请人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/02461
摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
摘要翻译：根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及一对由绝缘体制成的掩埋层，以埋置凹槽。沟槽的底面随着条纹的距离增加而变浅。

3. 发明授权

US08457167B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US08457167B2
公开(公告)日：2013-06-04
申请号：US12873821
申请日：2010-09-01
申请人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Jongil Hwang , Masaki Tohyama , Shinya Nunoue
发明人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Jongil Hwang , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01L33/30 , H01S5/22 , H01S5/323
摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.
摘要翻译：实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。凹槽的深度小于GaN衬底的厚度。该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。在半导体激光器件中，GaN衬底和半导体层的总厚度为100μm以上，并且，突起的顶面与凹部的底面之间的距离为5μm以上且50μm以下。。

4. 发明申请

US20110216799A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20110216799A1
公开(公告)日：2011-09-08
申请号：US12874440
申请日：2010-09-02
申请人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/02461
摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
摘要翻译：根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及一对由绝缘体制成的掩埋层，以埋置凹槽。沟槽的底面随着条纹的距离增加而变浅。

5. 发明申请

US20110216554A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110216554A1
公开(公告)日：2011-09-08
申请号：US12876675
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
IPC分类号： F21V7/22
CPC分类号： F21V7/22
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。发光器件具有发射激光束的半导体激光二极管。该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射，导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

6. 发明授权

US09093588B2 Semiconductor light emitting device with an aluminum containing layer formed thereon 有权
标题翻译：其上形成有铝层的半导体发光器件
公开(公告)号：US09093588B2
公开(公告)日：2015-07-28
申请号：US13032907
申请日：2011-02-23
申请人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/26 , H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。第一部分的带隙能量小于第二部分的带隙能量。

7. 发明申请

US20110157864A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110157864A1
公开(公告)日：2011-06-30
申请号：US12876774
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Maki Sugai , Rei Hashimoto
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Maki Sugai , Rei Hashimoto
IPC分类号： F21V9/16
CPC分类号： F21K9/68 , G02F1/133615 , G02F2001/133614
摘要： According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.
摘要翻译：根据实施例，提供了一种发光器件。发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。

8. 发明授权

US08432947B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08432947B2
公开(公告)日：2013-04-30
申请号：US12719468
申请日：2010-03-08
申请人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
发明人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/16 , H01S5/164 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S2301/18
摘要： A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion
摘要翻译：一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。第二半导体层包括脊部和宽部。沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。沿着第二方向的宽部的宽度比脊部宽。沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

9. 发明授权

US08369375B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08369375B2
公开(公告)日：2013-02-05
申请号：US12729636
申请日：2010-03-23
申请人： Yasushi Hattori , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
发明人： Yasushi Hattori , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
IPC分类号： H01S3/04 , H01S5/00 , H01S3/091
CPC分类号： H01S5/02296 , H01S5/005 , H01S5/021 , H01S5/0213 , H01S5/02216 , H01S5/0228 , H01S5/32341 , H01S5/327
摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.
摘要翻译：公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上，可见光发射器与封装件接触。

10. 发明申请

US20100246628A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100246628A1
公开(公告)日：2010-09-30
申请号：US12729636
申请日：2010-03-23
申请人： Yasushi HATTORI , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
发明人： Yasushi HATTORI , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
IPC分类号： H01S5/026
CPC分类号： H01S5/02296 , H01S5/005 , H01S5/021 , H01S5/0213 , H01S5/02216 , H01S5/0228 , H01S5/32341 , H01S5/327
摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.
摘要翻译：公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上，可见光发射器与封装件接触。

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