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1. 发明申请

US20070047607A1 Surface emitting type optical semiconductor device 有权
标题翻译：表面发射型光半导体器件
公开(公告)号：US20070047607A1
公开(公告)日：2007-03-01
申请号：US11387315
申请日：2006-03-23
申请人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
发明人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18394 , H01S5/2063
摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.
摘要翻译：可以将电流基本均匀地注入电流限制区域。表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。

2. 发明授权

US07830937B2 Surface emitting type optical semiconductor device 有权
标题翻译：表面发射型光半导体器件
公开(公告)号：US07830937B2
公开(公告)日：2010-11-09
申请号：US12191181
申请日：2008-08-13
申请人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
发明人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18394 , H01S5/2063
摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.
摘要翻译：可以将电流基本均匀地注入电流限制区域。表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。

3. 发明申请

US20080317081A1 SURFACE EMITTING TYPE OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：表面发射型光学半导体器件
公开(公告)号：US20080317081A1
公开(公告)日：2008-12-25
申请号：US12191181
申请日：2008-08-13
申请人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
发明人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
IPC分类号： H01S5/18 , H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18394 , H01S5/2063
摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.
摘要翻译：可以将电流基本均匀地注入电流限制区域。表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。

4. 发明授权

US07426228B2 Surface emitting type optical semiconductor device 有权
标题翻译：表面发射型光半导体器件
公开(公告)号：US07426228B2
公开(公告)日：2008-09-16
申请号：US11387315
申请日：2006-03-23
申请人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
发明人： Mitsuhiro Kushibe , Mizunori Ezaki , Rei Hashimoto , Michihiko Nishigaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18394 , H01S5/2063
摘要： It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.
摘要翻译：可以将电流基本均匀地注入电流限制区域。表面发射型光学半导体器件包括设置在衬底上的半导体有源层; 夹着所述半导体有源层以在垂直于所述基板的方向上形成光腔的第一和第二反射镜层; 多个电流限制区，设置在所述第二反射镜层中，以被具有杂质的杂质区分离; 半导体电流扩散层，设置在所述第二反射镜层上以覆盖所述电流限制区域; 以及向半导体活性层注入电流的电极部。电极部分包括设置在半导体电流扩散层上以围绕电流限制区域的第一电极和设置在与半导体活性层相反的衬底相对侧上的第二电极。

5. 发明申请

US20060187997A1 Vertical cavity surface emitting laser diode 审中-公开
标题翻译：垂直腔表面发射激光二极管
公开(公告)号：US20060187997A1
公开(公告)日：2006-08-24
申请号：US11332043
申请日：2006-01-13
申请人： Mizunori Ezaki , Mitsuhiro Kushibe , Michihiko Nishigaki , Keiji Takaoka
发明人： Mizunori Ezaki , Mitsuhiro Kushibe , Michihiko Nishigaki , Keiji Takaoka
IPC分类号： H01S3/08
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/1833 , H01S5/18338 , H01S5/3202 , H01S2301/176
摘要： It is made possible to obtain high performance having high controllability in polarization mode even when a vertical cavity surface emitting laser diode is fabricated on an ordinary substrate with a plane orientation (100) plane or the like. A vertical cavity surface emitting laser diode includes: a substrate; a semiconductor active layer which is formed on the substrate and has a light emitting region; a first reflecting mirror and a second reflecting mirror sandwiching the semiconductor active layer; a first recess which has a first groove depth penetrating at least the semiconductor active layer from the outermost layer of the first reflecting mirror; a second recess having a second groove depth shallower than the first groove depth; a mesa portion which is surrounded by the first and second recesses; and an insulating film which is buried in the first recess.
摘要翻译：即使在具有平面取向（100）面等的普通基板上制造垂直空腔表面发射激光二极管，也可以获得在极化模式下具有高可控性的高性能。垂直腔表面发射激光二极管包括：衬底; 半导体有源层，其形成在所述基板上并具有发光区域; 夹着半导体活性层的第一反射镜和第二反射镜; 第一凹部，其具有从第一反射镜的最外层至少穿透半导体活性层的第一凹槽深度; 第二凹槽，具有比第一凹槽深度浅的第二凹槽深度; 由第一和第二凹部包围的台面部分; 以及埋设在第一凹部中的绝缘膜。

6. 发明授权

US06768137B2 Laminated semiconductor substrate and optical semiconductor element 有权
公开(公告)号：US06768137B2
公开(公告)日：2004-07-27
申请号：US10400633
申请日：2003-03-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/06
摘要： A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of InjGa1-jAs1-kNk (0≦j≦1, 0.002≦k≦0.05) formed on the first surface of the substrate, a first conductive type clad layer formed on the buffer layer, an active layer formed on the first conductive type clad layer and comprising a well layer of InzGa1-zAs (0≦z≦1), the well layer having a smaller bandgap than the first conductive type clad layer, the active layer having a thickness of more than its critical thickness for the substrate based upon equilibrium theories, and a second conductive type clad layer formed on the active layer and having a larger bandgap than the well layer.

7. 发明授权

US07276735B2 Laminated semiconductor substrate and optical semiconductor element 有权
标题翻译：层压半导体衬底和光学半导体元件
公开(公告)号：US07276735B2
公开(公告)日：2007-10-02
申请号：US10884141
申请日：2004-07-02
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
IPC分类号： H01L29/201
CPC分类号： H01L33/32 , H01L33/06
摘要： A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of InjGa1-jAs1-kNk (0≦j≦1, 0.002≦k≦0.05) formed on the first surface of the substrate, a first conductive type clad layer formed on the buffer layer, an active layer formed on the first conductive type clad layer and comprising a well layer of InzGa1-zAs (0≦z≦1), the well layer having a smaller bandgap than the first conductive type clad layer, the active layer having a thickness of more than its critical thickness for the substrate based upon equilibrium theories, and a second conductive type clad layer formed on the active layer and having a larger bandgap than the well layer.
摘要翻译：使用GaAs衬底提供了用于长波长的低成本高性能光学半导体元件。该光学半导体元件包括具有彼此相对的第一表面和第二表面的GaAs衬底，具有第一表面和第二表面的第二表面，形成在基板的第一表面上的1-k N N（0 <= j <= 1，0.002 <= k <= 0.05），形成在基板的第一表面上的第一导电型覆盖层所述缓冲层，形成在所述第一导电型覆盖层上的有源层，并且包括阱层，所述阱层具有In（z）），所述阱层具有比所述第一导电型覆盖层更小的带隙，所述有源层的厚度大于其基于平衡理论的基板的临界厚度，以及形成在所述有源层上的第二导电型覆盖层和具有比阱层更大的带隙。

8. 发明授权

US08338844B2 Semiconductor light emitting apparatus having stacked reflective dielectric films 有权
标题翻译：具有层叠反射介电膜的半导体发光装置
公开(公告)号：US08338844B2
公开(公告)日：2012-12-25
申请号：US12549048
申请日：2009-08-27
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00 , H01L29/40 , H01L21/00
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2224/05001 , H01L2224/05124 , H01L2224/05139 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/16145 , H01L2224/32013 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2924/00014 , H01L2924/013
摘要： A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.
摘要翻译：一种制造半导体发光装置的方法包括使半导体发光器件和安装构件彼此面对。半导体发光器件包括层叠结构单元，其包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，设置在堆叠结构的主表面上的第一电极连接到第一半导体层的单元，设置在层叠结构单元的主表面上以连接到第二半导体层的第二电极，以及设置在主表面的第一半导体层和第二半导体层上的电介质堆叠膜不被第一电极和第二电极覆盖，由具有不同折射率的堆叠电介质膜形成，并且包括竖立在第一和第二电极中的至少一个的边缘的至少一部分上的突出部分。安装构件包括连接到第一和第二电极中的至少一个的连接构件。该方法还包括使用突出部分作为引导件使连接构件接触并连接到第一和第二电极中的至少一个。

9. 发明申请

US20110049541A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110049541A1
公开(公告)日：2011-03-03
申请号：US12719464
申请日：2010-03-08
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/02 , H01L33/12 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.
摘要翻译：一种半导体发光器件，包括：堆叠结构单元，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在其间的发光层; 以及包括第一和第二金属层的电极，所述第一金属层包括银或银合金，并且设置在与所述发光层相对的所述第二半导体层的一侧，所述第二金属层包括选自金的至少一种元素，铂，钯，铑，铱，钌和锇，并且设置在与第二半导体层相对的第一金属层的一侧。包括第一和第二半导体层之间的界面的区域中的元素的浓度高于在第一金属层远离界面的区域中的元素的浓度。

10. 发明申请

US20100059734A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
标题翻译：半导体发光器件和散热器
公开(公告)号：US20100059734A1
公开(公告)日：2010-03-11
申请号：US12505053
申请日：2009-07-17
申请人： Kei KANEKO , Yasuo OHBA , Hiroshi KATSUNO , Mitsuhiro Kushibe
发明人： Kei KANEKO , Yasuo OHBA , Hiroshi KATSUNO , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/325
摘要： A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.
摘要翻译：半导体发光器件包括由n型GaN和n型AlGaN中的至少一种构成的第一层; 由含Mg的p型AlGaN制成的第二层; 以及设置在第一层和第二层之间的发光部。发光部包括由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）构成的多个阻挡层，以及设置在每对多个阻挡层并由GaInN或AlGaInN制成。多个阻挡层具有最近的阻挡层和远的阻挡层。最近的阻挡层最接近多个阻挡层中的第二层。最近的阻挡层包括第一部分和第二部分。第一部分由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）制成。第二部分设置在第一部分和第二层之间，并由Al x Ga 1-x-y In y N（0＆lt; n 1; x，0＆n 1; y，x + y和n 1; 1）制成。第二部分中的Si浓度低于第一部分中的Si浓度，并且低于远阻隔层中的Si浓度。

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