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11. 发明授权

US06529439B2 Semiconductor memory device 有权
公开(公告)号：US06529439B2
公开(公告)日：2003-03-04
申请号：US09789514
申请日：2001-02-22
申请人： Toshiya Uchida , Kota Hara , Shinya Fujioka
发明人： Toshiya Uchida , Kota Hara , Shinya Fujioka
IPC分类号： G11C800
CPC分类号： G11C8/08 , G11C5/06
摘要： A semiconductor memory device includes isolation circuits disconnecting cell arrays from sense amplifiers, and isolation signal generating circuits generating isolation signals that control the isolation circuits. The isolation signal generating circuits are hierarchically divided into main isolation signal generating circuits and sub isolation signal generating circuits. The sub isolation signal generating circuits generate sub isolation signals having a first potential on a high-potential side. The main isolation signal generating circuits generate main isolation signals having a second potential on the high-potential side, the second potential being lower than the first potential.

12. 发明授权

US06450877B2 Door mechanism of automotive air conditioning device 有权
标题翻译：汽车空调装置门机构
公开(公告)号：US06450877B2
公开(公告)日：2002-09-17
申请号：US09887005
申请日：2001-06-25
申请人： Akihiro Tsurushima , Takumi Ijichi , Katsuhiro Kurokawa , Toshiya Uchida , Masaharu Onda
发明人： Akihiro Tsurushima , Takumi Ijichi , Katsuhiro Kurokawa , Toshiya Uchida , Masaharu Onda
IPC分类号： B60S154
CPC分类号： B60H1/00857 , B60H1/00692
摘要： A mix door D, which is arranged in a limited space defined between an upstream air passage 10 in which an evaporator 3 is installed and a downstream air passage 11 in which a heater core 4 is installed, is of a sliding type. By guiding a door proper 12 by using a cam groove, a seal member 15 bonded to the door proper 12 is pressed against a contacting member 13 only when the door proper 12 assumes its close position. Smoothed operation of the door proper 12 is achieved with a compact construction of a unit, and sealing and temperature controlling performance is increased.
摘要翻译：设置在设置有蒸发器3的上游空气通道10和安装有加热器芯4的下游空气通道11之间的有限空间中的混合门D是滑动型的。通过使用凸轮槽引导门本体12，仅当门本体12处于其关闭位置时，结合到门本体12的密封构件15被压靠在接触构件13上。门体12的平滑操作通过单元的紧凑结构实现，并且密封和温度控制性能增加。

13. 发明授权

US06185149B2 Semiconductor integrated circuit memory 有权
标题翻译：半导体集成电路存储器
公开(公告)号：US06185149B2
公开(公告)日：2001-02-06
申请号：US09340147
申请日：1999-06-28
申请人： Shinya Fujioka , Masao Taguchi , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Yasurou Matsuzaki , Toshiya Uchida
发明人： Shinya Fujioka , Masao Taguchi , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Yasurou Matsuzaki , Toshiya Uchida
IPC分类号： G11C800
CPC分类号： G11C7/1018 , G11C7/1072
摘要： A semiconductor memory includes memory cell blocks, a burst-length information generating circuit which generates burst-length information based on a burst length, and a block enable circuit which receives the burst-length information. The block enable circuit selectively enables one of the memory cell blocks when the burst length is equal to or shorter than a predetermined burst length and selectively enables a plurality of memory cell blocks based on the burst length when the burst length is longer than the predetermined burst length. Data are read from the above-mentioned one or plurality of memory cell blocks.
摘要翻译：半导体存储器包括存储单元块，基于突发长度生成突发长度信息的突发长度信息产生电路，以及接收脉冲串长度信息的块使能电路。当突发长度等于或小于预定突发长度时，块使能电路选择性地启用存储单元块中的一个，并且当突发长度长于预定突发时，基于脉冲串长度选择性地启用多个存储单元块长度。从上述一个或多个存储单元块读取数据。

14. 发明授权

US6078210A Internal voltage generating circuit 有权
标题翻译：内部电压发生电路
公开(公告)号：US6078210A
公开(公告)日：2000-06-20
申请号：US172092
申请日：1998-10-14
申请人： Toshiya Uchida , Yasurou Matsuzaki
发明人： Toshiya Uchida , Yasurou Matsuzaki
IPC分类号： G01R31/26 , G01R31/28 , G01R31/30 , G05F1/56 , G11C11/401 , G11C11/407 , G11C11/413 , G11C16/06 , G11C29/06 , H01L21/66 , H01L21/822 , H01L27/04 , H02J3/38
CPC分类号： G01R31/3004
摘要： The present invention relates to an internal voltage generating circuit. The internal voltage generating circuit comprises a reference voltage generating circuit for generating a reference voltage, which does not depend on an external power supply; and a comparator including a first input terminal, to which the reference voltage is supplied, a second input terminal, for comparing the voltages of the first and second input terminals and generating an output voltage according to the difference thereof at the output terminal; and an impedance element, which is selectively inserted between the output terminal and the second input terminal of the comparator according to an operation mode. An internal power supply voltage, which has a constant voltage during normal operation and has an accurate higher voltage during acceleration test, can be generated at the output terminal by inserting or not inserting a suitable impedance element between the second input terminal and output terminal according to the operation mode. The above-described comparator can be realized by a common differential amplifying circuit, for example. Further, a reference voltage value at normal operation can be fine-tuned by subdividing the impedance element. In the same way, the voltage value at acceleration test can be also fine-tuned by subdividing the impedance element.
摘要翻译：本发明涉及内部电压发生电路。内部电压产生电路包括用于产生不依赖于外部电源的参考电压的参考电压产生电路; 以及比较器，包括提供参考电压的第一输入端，第二输入端，用于比较第一和第二输入端的电压，并根据输出端的差异产生输出电压; 以及阻抗元件，其根据操作模式选择性地插入在比较器的输出端子和第二输入端子之间。根据本发明，可以在输出端子上插入或不插入合适的阻抗元件，在正常工作期间具有恒定电压并且在加速度测试期间具有准确的较高电压的内部电源电压操作模式。上述比较器例如可以由公共差分放大电路实现。此外，正常工作时的参考电压值可通过细分阻抗元件进行微调。以同样的方式，加速度测试时的电压值也可以通过细分阻抗元件进行微调。

15. 发明授权

US6020612A Semiconductor integrated circuit having efficient layout of wiring lines 失效
标题翻译：具有布线效率高的半导体集成电路
公开(公告)号：US6020612A
公开(公告)日：2000-02-01
申请号：US970563
申请日：1997-11-14
申请人： Takahiro Sawamura , Toshiya Uchida , Hiromi Kanda
发明人： Takahiro Sawamura , Toshiya Uchida , Hiromi Kanda
IPC分类号： H01L21/3205 , H01L21/82 , H01L21/8234 , H01L23/52 , H01L23/522 , H01L27/06 , H01L27/10 , H01L29/76 , H01L31/113
CPC分类号： H01L23/5222 , H01L23/522 , H01L2924/0002 , Y10S257/92
摘要： A semiconductor integrated circuit includes a gate extending in a first direction, a diffusion-layer region corresponding to the gate, and a plurality of backing wiring lines connected to the diffusion-layer region and extending in a first wiring layer in a second direction substantially perpendicular to the first direction. The semiconductor integrated circuit further includes connection wiring lines providing connections between the plurality of backing wiring lines and provided in a second wiring layer.
摘要翻译：半导体集成电路包括：沿第一方向延伸的栅极，对应于栅极的扩散层区域;以及多个背衬布线，其连接到扩散层区域，并沿第二方向基本垂直于第一布线层延伸到第一个方向。半导体集成电路还包括提供多个背衬布线之间的连接并设置在第二布线层中的连接布线。

16. 发明授权

US5995429A Semiconductor memory device capable of multiple word-line selection and method of testing same 失效
标题翻译：能够进行多种字线选择的半导体存储器件及其测试方法
公开(公告)号：US5995429A
公开(公告)日：1999-11-30
申请号：US57403
申请日：1998-04-09
申请人： Kazumi Kojima , Toshiya Uchida , Makoto Yanagisawa
发明人： Kazumi Kojima , Toshiya Uchida , Makoto Yanagisawa
IPC分类号： G11C29/34 , G11C7/00
CPC分类号： G11C29/34
摘要： A semiconductor memory device capable of conducting test operations includes a plurality of word drivers which keep word lines in an active state when the word drivers are selected until the word drivers are reset. The semiconductor memory device further includes a control circuit which successively selects more than one of the plurality of word drivers so as to achieve simultaneous activation of word lines corresponding to selected ones of the plurality of word drivers during the test operations.
摘要翻译：能够进行测试操作的半导体存储器件包括多个字驱动器，当选择字驱动器直到字驱动器复位时，使字线保持在活动状态。半导体存储器件还包括控制电路，其连续地选择多个字驱动器中的多于一个，以便在测试操作期间实现对应于多个字驱动器中的所选字驱动器的字线的同时激活。

17. 发明授权

US5641986A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5641986A
公开(公告)日：1997-06-24
申请号：US587965
申请日：1996-01-17
申请人： Toshiya Uchida
发明人： Toshiya Uchida
IPC分类号： G06F1/26 , G11C5/14 , G11C11/401 , G11C11/407 , H01L21/822 , H01L21/8242 , H01L27/02 , H01L27/04 , H01L27/108 , H02M3/07 , H01L29/00
CPC分类号： G11C5/14 , G11C5/145 , H01L27/0218
摘要： A semiconductor device includes an increase voltage generation circuit generating an increased voltage having a higher potential than a high potential of a power-supply voltage externally supplied. In the device, an increased voltage stabilizing capacitor is connected between the increased voltage and the high potential of the power-supply voltage, and stabilizes the increased voltage.
摘要翻译：半导体器件包括增加电压产生电路，其产生具有比外部供电的电源电压的高电位更高的电位的增加的电压。在该装置中，增加的稳压电容器连接在增加的电压和电源电压的高电位之间，并且稳定增加的电压。

18. 发明授权

US4865249A Safety device 失效
标题翻译：安全装置
公开(公告)号：US4865249A
公开(公告)日：1989-09-12
申请号：US90746
申请日：1987-08-28
申请人： Mitsutoshi Sugano , Toshiya Uchida , Shigeru Tokita , Atsuhiko Kaneaki , Shigeho Shimada
发明人： Mitsutoshi Sugano , Toshiya Uchida , Shigeru Tokita , Atsuhiko Kaneaki , Shigeho Shimada
IPC分类号： F16K31/70 , F01P11/00 , F01P11/18 , G05D23/02 , G05D23/08 , G05D23/12
CPC分类号： F01P11/18 , G05D23/08 , G05D23/123 , G05D23/1333
摘要： A safety device for an engine cooling system having a heater core circuit for circulating the engine cooling water through the heater core of an automotive air conditioning system, and a radiator circuit for circulating the engine cooling water through a radiator. The safety device comprises a safety valve provided in the heater core circuit and capable of discharging the engine cooling water outside the vehicle when the temperature of the engine cooling water exceeds a predetermined temperature and/or when the pressure of the engine cooling water exceeds a predetermined pressure.
摘要翻译：一种用于发动机冷却系统的安全装置，其具有用于使发动机冷却水循环通过汽车空调系统的加热器芯的加热器核心电路和用于使发动机冷却水循环通过散热器的散热器电路。所述安全装置包括设置在所述加热器芯线路中的安全阀，并且当所述发动机冷却水的温度超过预定温度时，和/或当所述发动机冷却水的压力超过预定温度时，能够将所述发动机冷却水排出到所述车辆外部压力。

19. 发明授权

US08588006B2 Semiconductor memory including switching circuit for selecting data supply 有权
标题翻译：半导体存储器包括用于选择数据提供的切换电路
公开(公告)号：US08588006B2
公开(公告)日：2013-11-19
申请号：US13570158
申请日：2012-08-08
申请人： Hiroyuki Kobayashi , Toshiya Uchida
发明人： Hiroyuki Kobayashi , Toshiya Uchida
IPC分类号： G11C7/10
CPC分类号： G11C11/4096 , G11C7/1045 , G11C7/1051 , G11C7/1057 , G11C11/4076 , G11C2207/105
摘要： A semiconductor memory is provided which includes: a first pad; a second pad disposed adjacent to the first pad; a first output buffer coupled to the first pad; and a second output buffer coupled to the second pad. The first pad is coupled to the second pad by metal.
摘要翻译：提供半导体存储器，其包括：第一焊盘; 邻近所述第一焊盘设置的第二焊盘; 耦合到所述第一焊盘的第一输出缓冲器; 以及耦合到第二焊盘的第二输出缓冲器。第一垫通过金属耦合到第二垫。

20. 发明授权

US08449189B2 Motor with aerodynamic pressure bearing mechanism 有权
标题翻译：电机带气动压力承载机构
公开(公告)号：US08449189B2
公开(公告)日：2013-05-28
申请号：US12451665
申请日：2008-05-21
申请人： Akiyoshi Takahashi , Toshiya Uchida
发明人： Akiyoshi Takahashi , Toshiya Uchida
IPC分类号： F16C32/06
CPC分类号： F16C17/10 , F16C17/026 , F16C17/045 , F16C33/1015
摘要： In a gas dynamic pressure bearing mechanism (1) for smoothing rotary motion of a shaft (10) by feeding gas to the bearing clearance between the shaft (10) and a fixed sleeve (20) for supporting the shaft (10) through a herring bone groove (10a), the herring bone groove (10a) is provided in the shaft (10) such that pressure distribution generated in the bearing clearance moves at a high speed. The herring bone groove (10a) consists of N grooves such that N minimal pressure values appearing alternately with maximal pressure values at the positions where the maximal pressure values of dynamic pressure variation appear in the bearing clearance when the shaft (10) rotates have such an interval as it becomes lower than the condensation pressure value.
摘要翻译：在用于通过将气体输送到轴（10）和用于通过鲱鱼支撑轴（10）的固定套筒（20）之间的轴承间隙的方法来平滑轴（10）的旋转运动的气体动压轴承机构（1）骨槽（10a），在轴（10）中设置有珩骨槽（10a），使得在轴承间隙中产生的压力分布高速移动。鲱鱼骨槽（10a）由N个沟槽组成，使得当轴（10）旋转时在轴承间隙中出现动态压力变化的最大压力值的位置处交替具有最大压力值的N个最小压力值具有这样的间隔，因为它变得低于冷凝压力值。

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