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11. 发明授权

US6146259A Carrier head with local pressure control for a chemical mechanical polishing apparatus 失效
标题翻译：用于化学机械抛光装置的具有局部压力控制的承载头
公开(公告)号：US6146259A
公开(公告)日：2000-11-14
申请号：US907810
申请日：1997-08-08
申请人： Steven M. Zuniga , Hung Chih Chen , Manoocher Birang , Kapila Wijekoon , Sen-Hou Ko
发明人： Steven M. Zuniga , Hung Chih Chen , Manoocher Birang , Kapila Wijekoon , Sen-Hou Ko
IPC分类号： B24B37/30 , B24B37/32 , B24B49/16 , H01L21/304 , B24B47/02
CPC分类号： B24B37/30 , B24B37/32 , B24B49/16
摘要： A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the purpose.
摘要翻译：用于化学机械抛光装置的载体头包括柔性膜，其下表面提供基板接收表面。承载头可以包括与柔性膜的上表面接触的突起，以将增加的负载施加到基底的潜在的被抛光的区域。流体射流可用于此目的。

12. 发明授权

US07651934B2 Process for electroless copper deposition 有权
标题翻译：无电镀铜工艺
公开(公告)号：US07651934B2
公开(公告)日：2010-01-26
申请号：US11385037
申请日：2006-03-20
申请人： Dmitry Lubomirsky , Timothy W. Weidman , Arulkumar Shanmugasundram , Nicolay Y. Kovarsky , Kapila Wijekoon
发明人： Dmitry Lubomirsky , Timothy W. Weidman , Arulkumar Shanmugasundram , Nicolay Y. Kovarsky , Kapila Wijekoon
IPC分类号： H01L21/20 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/288 , C23C18/1608 , C23C18/165 , C23C18/1831 , C23C18/38 , H01L21/76844 , H01L21/76846 , H01L21/76874
摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.
摘要翻译：本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

13. 发明申请

US20050032381A1 Method and apparatus for polishing metal and dielectric substrates 失效
公开(公告)号：US20050032381A1
公开(公告)日：2005-02-10
申请号：US10939750
申请日：2004-09-13
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred Redeker
IPC分类号： B24B1/00 , B24B5/00 , B24B29/00 , B24B37/04 , C23F1/00 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

14. 发明授权

US06537144B1 Method and apparatus for enhanced CMP using metals having reductive properties 失效
公开(公告)号：US06537144B1
公开(公告)日：2003-03-25
申请号：US09505899
申请日：2000-02-17
申请人： Stan D. Tsai , Yuchun Wang , Kapila Wijekoon , Rajeev Bajaj , Fred C. Redeker
发明人： Stan D. Tsai , Yuchun Wang , Kapila Wijekoon , Rajeev Bajaj , Fred C. Redeker
IPC分类号： B24D1100
CPC分类号： B24B37/26 , B24B53/017 , H01L21/3212
摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

15. 发明授权

US06309276B1 Endpoint monitoring with polishing rate change 有权
标题翻译：端点监测与抛光速率变化
公开(公告)号：US06309276B1
公开(公告)日：2001-10-30
申请号：US09495616
申请日：2000-02-01
申请人： Stan Tsai , Fred C. Redeker , Kapila Wijekoon
发明人： Stan Tsai , Fred C. Redeker , Kapila Wijekoon
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/04 , B24B49/12
摘要： A substrate with a first layer disposed on a second layer is chemically mechanically polished. A polishing endpoint detection system generates a signal that is monitored for an endpoint criterion. The polishing rate of the substrate is reduced when the bulk of the first layer has been removed but before the second layer is exposed. For example, the polishing rate is reduced when the polishing time approaches an expected polishing end time but before the endpoint criterion is detected. Polishing stops once the endpoint criterion is detected after the underlying layer has been exposed.
摘要翻译：具有设置在第二层上的第一层的衬底被化学机械抛光。抛光端点检测系统生成监视端点标准的信号。当第一层的主体已被去除但在第二层被暴露之前，衬底的抛光速率降低。例如，当抛光时间接近预期的抛光结束时间但在检测到端点标准之前，抛光速率降低。一旦在底层暴露后检测到终点标准，抛光停止。

16. 发明授权

US06218306B1 Method of chemical mechanical polishing a metal layer 失效
标题翻译：化学机械抛光金属层的方法
公开(公告)号：US06218306B1
公开(公告)日：2001-04-17
申请号：US09064928
申请日：1998-04-22
申请人： Boris Fishkin , Kapila Wijekoon , Ronald Lin
发明人： Boris Fishkin , Kapila Wijekoon , Ronald Lin
IPC分类号： H01L21768
CPC分类号： H01L21/3212 , B24B37/04 , H01L21/7684 , Y10S438/959
摘要： In the formation of metal vias, plugs or lines, a metal layer is deposited onto a non-planar non-metallic surface of a substrate. The metal layer is chemical mechanical polished with a first polishing pad until the metal layer is substantially planarized and a residual layer having a thickness about equal to the depth of potential microscratches, between about 200 and 1000 angstroms, remains over the non-metallic surface. The residual layer is chemical mechanical polished with a second, softer polishing pad until the non-metallic surface is exposed and the residual layer is removed.
摘要翻译：在形成金属通孔，插塞或管线时，将金属层沉积在基板的非平面非金属表面上。金属层用第一抛光垫进行化学机械抛光，直到金属层基本上平坦化，并且在非金属表面上保留具有大约等于约200和1000埃之间的电位微细纹深度的厚度的残余层。残余层用第二较软的抛光垫进行化学机械抛光，直到非金属表面暴露并除去残留层。

17. 发明申请

US20120315756A1 PROCESS FOR ELECTROLESS COPPER DEPOSITION ON A RUTHENIUM SEED 审中-公开
标题翻译：电镀铜沉积方法
公开(公告)号：US20120315756A1
公开(公告)日：2012-12-13
申请号：US13421434
申请日：2012-03-15
申请人： Timothy W. Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert S. Chu , Frederick C. Wu , Kavita Shah
发明人： Timothy W. Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert S. Chu , Frederick C. Wu , Kavita Shah
IPC分类号： H01L21/768
CPC分类号： C23C18/40 , C23C18/1608 , C23C18/165 , H01L21/288 , H01L21/76802 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76849 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L21/76877
摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.
摘要翻译：本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

18. 发明授权

US07070480B2 Method and apparatus for polishing substrates 失效
标题翻译：抛光基板的方法和装置
公开(公告)号：US07070480B2
公开(公告)日：2006-07-04
申请号：US10269107
申请日：2002-10-10
申请人： Yongsik Moon , Kapila Wijekoon
发明人： Yongsik Moon , Kapila Wijekoon
IPC分类号： B24B1/00
CPC分类号： B24B37/26
摘要： Method and apparatus for polishing substrates. A chemical mechanical polishing article comprises a body and a patterned surface. The patterned surface comprises a plurality of slurry distribution grooves and a plurality of islands on the body. Each of the plurality of the islands comprises a base portion, a polishing surface disposed thereon, and a contoured surface disposed therebetween. The base portion comprises one or more sidewalls defining at least a portion of the plurality of slurry distribution grooves. The polishing surface is smaller than the base portion, the difference therebetween attributable to the contoured surface. In a particular embodiment, conductive materials and low k dielectric films are polished with reduced or minimum substrate surface damage.
摘要翻译：抛光基板的方法和装置。化学机械抛光制品包括主体和图案化表面。图案化表面包括多个浆料分配槽和主体上的多个岛。所述多个岛中的每一个包括基部，设置在其上的抛光表面和设置在其间的轮廓表面。基部包括限定多个浆料分配槽的至少一部分的一个或多个侧壁。抛光表面小于基部，其差异归因于轮廓表面。在特定实施例中，导电材料和低k电介质膜被抛光，具有降低或最小的衬底表面损伤。

19. 发明授权

US06960521B2 Method and apparatus for polishing metal and dielectric substrates 失效
标题翻译：抛光金属和电介质基板的方法和装置
公开(公告)号：US06960521B2
公开(公告)日：2005-11-01
申请号：US10939750
申请日：2004-09-13
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
IPC分类号： B24B1/00 , B24B5/00 , B24B29/00 , B24B37/04 , C23F1/00 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.
摘要翻译：提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光设备中，其中所述载体头包括保持环和用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电材料。

20. 发明授权

US06638143B2 Ion exchange materials for chemical mechanical polishing 失效
公开(公告)号：US06638143B2
公开(公告)日：2003-10-28
申请号：US09737414
申请日：2000-12-14
申请人： Yuchun Wang , Stan D. Tsai , Kapila Wijekoon , Rajeev Bajaj , Fred C. Redeker
发明人： Yuchun Wang , Stan D. Tsai , Kapila Wijekoon , Rajeev Bajaj , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： B08B1/04 , B08B3/08 , B24B37/042 , B24B37/24 , B24B53/017 , B24D3/346 , H01L21/67046
摘要： Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.

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