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11. 发明授权

US6140709A Bonding pad structure and method for manufacturing the bonding pad structure 有权
标题翻译：接合垫结构及其制造方法
公开(公告)号：US6140709A
公开(公告)日：2000-10-31
申请号：US306181
申请日：1999-05-06
申请人： Horst Muenzel , Michael Offenberg , Udo Bischof , Eckhard Graf , Markus Lutz
发明人： Horst Muenzel , Michael Offenberg , Udo Bischof , Eckhard Graf , Markus Lutz
IPC分类号： H01L23/12 , B81B7/00 , B81C1/00 , G01C19/56 , G01P15/08 , H01L21/60 , H01L23/48 , H01L29/40 , H01L25/52
CPC分类号： G01P15/0802 , B81C1/00301 , B81C1/00801 , G01C19/56 , H01L24/02 , B81B2207/07 , B81B2207/097 , B81C2201/014 , B81C2201/053 , H01L2224/0401 , H01L2924/01004 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/01074
摘要： A bonding pad structure, in particular for a micromechanical sensor, includes a substrate, an electrically insulating sacrificial layer provided on the substrate, a patterned conductor path layer buried in the sacrificial layer, a contact hole provided in the sacrificial layer, and a bonding pad base, composed of an electrically conductive material. The bonding pad base has a first region extending over the sacrificial layer, and a second layer in contact with the conductor path region and extending through the contact hole. A protective layer is provided at least temporarily on the sacrificial layer in a specific region beneath and around the bonding pad base to prevent underetching of the sacrificial layer beneath the bonding pad base during etching of the sacrificial layer in such a way that the substrate and/or the conductor path is exposed.
摘要翻译：特别是用于微机械传感器的焊盘结构包括衬底，设置在衬底上的电绝缘牺牲层，埋在牺牲层中的图案化导体通路层，设置在牺牲层中的接触孔，以及焊盘基底，由导电材料组成。焊盘基部具有在牺牲层上延伸的第一区域，以及与导体路径区域接触并延伸穿过接触孔的第二层。保护层至少临时地设置在接合焊盘基座的下面和周围的特定区域中的牺牲层上，以防止牺牲层在蚀刻牺牲层期间的牺牲层的去抛光，使得衬底和/ 或导体路径露出。

12. 发明授权

US06214243B1 Process for producing a speed of rotation coriolis sensor 有权
标题翻译：生产旋转速度科里奥利传感器的方法
公开(公告)号：US06214243B1
公开(公告)日：2001-04-10
申请号：US09051878
申请日：1998-10-20
申请人： Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp , Markus Lutz
发明人： Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp , Markus Lutz
IPC分类号： B81B702
CPC分类号： G01C19/5747 , B81B3/0051 , B81B2201/0242 , B81B2203/058 , G01C19/5769
摘要： A process for the manufacture of a Coriolis rate-of-rotation sensor with oscillatory support masses spring-suspended on a substrate as well as driving means for the excitation of the planar oscillation of the oscillating masses and evaluation means for the determination of a Coriolis acceleration. Oscillating masses, driving means and integrated stops are structured in a common operation by means of plasma etching from a silicon-on-insulator (SOI) wafer.
摘要翻译：用于制造具有弹簧悬浮在基板上的振荡支撑质量的科里奥利旋转速度传感器的方法以及用于激发振荡块的平面振荡的驱动装置和用于确定科里奥利加速度的评估装置。通过从绝缘体上硅（SOI）晶片进行等离子体蚀刻，振荡质量，驱动装置和集成止动器通过共同的操作构成。

13. 发明授权

US6117701A Method for manufacturing a rate-of-rotation sensor 失效
标题翻译：旋转传感器的制造方法
公开(公告)号：US6117701A
公开(公告)日：2000-09-12
申请号：US907601
申请日：1997-08-08
申请人： Nicholas Buchan , Horst Muenzel , Franz Laermer , Michael Offenberg , Udo Bischof , Markus Lutz
发明人： Nicholas Buchan , Horst Muenzel , Franz Laermer , Michael Offenberg , Udo Bischof , Markus Lutz
IPC分类号： G01C19/56 , G01C19/5755 , G01C19/5769 , G01P15/08 , H01L29/84 , H01L41/08 , H01L21/00 , G01P15/00
CPC分类号： G01C19/5755 , G01C19/5769 , G01P15/0802 , G01P2015/0814
摘要： A rate-of-rotation sensor includes a three-layer system. The rate-of-rotation sensor and the conductor traces are patterned out of the third layer. The conductor traces are electrically insulated (isolated) by cutouts from other regions of the third layer and by a second electrically insulating layer from a first layer. Thus, a simple electrical contacting (configuration) is achieved that is patterned out of a three-layer system. Since the same etching process is used for the first and the third layer, an especially efficient manufacturing is possible.
摘要翻译：旋转速度传感器包括三层系统。转速传感器和导体迹线从第三层图案化。导体迹线通过从第三层的其它区域的切口和与第一层的第二电绝缘层的切口电绝缘（隔离）。因此，实现了由三层系统构图的简单的电接触（构造）。由于在第一和第三层使用相同的蚀刻工艺，所以可以进行特别有效的制造。

14. 发明授权

US06268232B1 Method for fabricating a micromechanical component 有权
标题翻译：微机械部件的制造方法
公开(公告)号：US06268232B1
公开(公告)日：2001-07-31
申请号：US09302224
申请日：1999-04-29
申请人： Helmut Skapa , Horst Muenzel , Franz Laermer , Michael Offenberg , Heinz-Georg Vossenberg
发明人： Helmut Skapa , Horst Muenzel , Franz Laermer , Michael Offenberg , Heinz-Georg Vossenberg
IPC分类号： H01L2100
CPC分类号： G01P15/0802 , B81B2201/0235 , B81C1/00571 , B81C2201/0109 , B81C2201/014 , B81C2201/056 , B81C2203/0109 , G01P1/023
摘要： A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.
摘要翻译：用于制造微机械部件，特别是表面微机械加速度传感器的方法涉及准备衬底并在衬底上提供绝缘层，其中掩埋有图案化的电路迹线层。包括第一区域和第二区域的导电层设置在绝缘层上，并且可移动元件通过形成第一多个沟槽而被构造在第一区域中，并且通过使用蚀刻剂去除至少一部分绝缘层从导电层下面。通过构造第二多个沟槽，形成接触元件并在第二区域中电连接到电路迹线层，并且所得到的可移动元件被封装在第一区域中。在第二区域中形成接触元件的第二多个沟槽首先在形成在第一区域中的可移动元件的封装之后形成。

15. 发明授权

US5421952A Method for the manufacture of silicon injection plates and silicon plates produced thereby 失效
标题翻译：制造硅注射板和硅板的方法
公开(公告)号：US5421952A
公开(公告)日：1995-06-06
申请号：US131512
申请日：1993-10-04
申请人： Juergen Buchholz , Udo Jauernig , Alexandra Boehringer , Guenther Findler , Horst Muenzel
发明人： Juergen Buchholz , Udo Jauernig , Alexandra Boehringer , Guenther Findler , Horst Muenzel
IPC分类号： B05B1/04 , C23F1/00 , F02M61/16 , F02M61/18 , B05B1/00
CPC分类号： F02M61/168 , F02M61/1853
摘要： A method for fabricating silicon injection plates is both highly precise and particularly simple. The silicon injection plate is formed by an upper silicon plate having injection holes and a lower silicon plate having a through opening and channels. The lower silicon plate is fabricated by simultaneous, double-sided etching of silicon.
摘要翻译：制造硅注射板的方法既高精度又特别简单。硅注射板由具有注入孔的上硅板和具有通孔和通道的下硅板形成。下硅板通过硅的同时双面蚀刻制造。

16. 发明授权

US08245571B2 Component and production method for a component 有权
标题翻译：组件的组件和生产方法
公开(公告)号：US08245571B2
公开(公告)日：2012-08-21
申请号：US12611634
申请日：2009-11-03
申请人： Thorsten Pannek , Udo-Martin Gomez , Horst Muenzel
发明人： Thorsten Pannek , Udo-Martin Gomez , Horst Muenzel
IPC分类号： B60C23/02 , B60C23/00 , H03B5/04
CPC分类号： G01P15/125 , B60C23/0408 , B60C23/0433 , B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2201/0271 , G01P15/0802 , G01P2015/0814 , Y10T29/49002
摘要： A component having an acceleration sensor having at least one freely oscillatory mass, and a resonator having at least one resonating structure, in which the at least one freely oscillatory mass of the acceleration sensor and the at least one resonating structure of the resonator are disposed on and/or in one chip. A corresponding production method for a component is also described.
摘要翻译：具有至少一个自由振荡质量的加速度传感器的分量和具有至少一个谐振结构的谐振器，其中加速度传感器的至少一个自由振荡质量和谐振器的至少一个谐振结构设置在和/或在一个芯片中。还描述了相应的组件的制造方法。

17. 发明申请

US20060016995A1 Microstructured infrared sensor and method for its manufacture 审中-公开
标题翻译：微结构红外传感器及其制造方法
公开(公告)号：US20060016995A1
公开(公告)日：2006-01-26
申请号：US11150762
申请日：2005-06-10
申请人： Nils Kummer , Roland Mueller-Fiedler , Stefan Finkbeiner , Andre Mueller , Horst Muenzel , Dieter Maurer , Stefan Hiemer , Jurgen Perthold
发明人： Nils Kummer , Roland Mueller-Fiedler , Stefan Finkbeiner , Andre Mueller , Horst Muenzel , Dieter Maurer , Stefan Hiemer , Jurgen Perthold
IPC分类号： G01J5/00
CPC分类号： G01J1/04 , G01J1/0411 , G01J5/02 , G01J5/0215 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/046 , G01J5/08 , G01J5/0806 , G01J5/0853 , G01J5/0881 , G01J5/12 , G01N21/3504 , H01L27/14618 , H01L27/14625 , H01L31/0203 , H01L31/0232 , H01L2924/0002 , H01L2924/00
摘要： A microstructured infrared sensor includes: a sensor chip having a diaphragm; a cavity formed underneath the diaphragm; a thermopile structure formed on the diaphragm and having bonded printed conductors; an absorber layer formed on the thermopile structure for absorbing infrared radiation; and a cap chip attached to the sensor chip. A sensor space is formed between the cap chip and the sensor chip, and the sensor space accommodates the thermopile structure. The infrared sensor also includes a convex lens area for focusing incident infrared radiation onto the absorber layer. The lens area may be formed on the top of the cap chip or on a lens chip attached to the cap chip. The lens area may be formed by drying a dispensed lacquer droplet, or by a softened, structured lacquer cylinder, or by subsequent etching of the dried lacquer droplet and the surrounding substrate material.
摘要翻译：微结构红外传感器包括：具有隔膜的传感器芯片; 形成在隔膜下方的空腔; 形成在隔膜上并具有粘合的印刷导体的热电堆结构; 形成在热电堆结构上用于吸收红外辐射的吸收层; 以及附接到传感器芯片的盖芯片。在盖芯片和传感器芯片之间形成传感器空间，传感器空间容纳热电堆结构。红外传感器还包括用于将入射的红外辐射聚焦到吸收层上的凸透镜区域。透镜区域可以形成在盖芯片的顶部上或附接到盖芯片的透镜芯片上。透镜区域可以通过干燥分配的漆液滴，或通过软化的结构化漆筒，或者通过随后蚀刻干燥的漆液滴和周围的基底材料来形成。

18. 发明授权

US06318175B1 Micromechanical sensor and method for the manufacture thereof 有权
标题翻译：微机械传感器及其制造方法
公开(公告)号：US06318175B1
公开(公告)日：2001-11-20
申请号：US09585141
申请日：2000-06-01
申请人： Joerg Muchow , Horst Muenzel , Michael Offenberg , Winfried Waldvogel
发明人： Joerg Muchow , Horst Muenzel , Michael Offenberg , Winfried Waldvogel
IPC分类号： G01P1500
CPC分类号： G01H11/06 , G01L9/0042 , G01L9/0054 , G01L9/0073 , G01P15/0802 , G01P15/123 , G01P15/125 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828
摘要： A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).
摘要翻译：微机械传感器包括具有施加在硅衬底上的硅的外延层的硅衬底的支撑体。通过蚀刻工艺将外延层的一部分裸露以形成至少一个微机械偏转部分。裸露的偏转部分由多晶硅制成，该多晶硅在外延生长过程中在已通过蚀刻去除的氧化硅层上形成多晶体。在支撑区域和/或与硅衬底的连接处，暴露的偏转部分进入单晶硅。通过大层厚度，传感器的大工作容量是可能的。该传感器结构提供增强的机械稳定性，可加工性和成形的可能性，并且其可以特别集成在双极工艺或混合工艺（双极CMOS，双极CMOS-DMOS）中。

19. 发明授权

US5569852A Capacitive accelerometer sensor and method for its manufacture 失效
标题翻译：电容式加速度传感器及其制造方法
公开(公告)号：US5569852A
公开(公告)日：1996-10-29
申请号：US355760
申请日：1994-12-14
申请人： Jiri Marek , Frank Bantien , Horst Muenzel , Michael Offenberg
发明人： Jiri Marek , Frank Bantien , Horst Muenzel , Michael Offenberg
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A contacting of a capacitive accelerometer sensor of monocrystalline material is achieved by a capacitive accelerometer sensor having a structure etched out of a monocrystalline layer arranged on a substrate, including a seismic mass that is only joined to the substrate by suspension segments and executing a movement in its longitudinal direction in response to the occurrence of an acceleration of parallel, plate-like first fingers extending out from this mass at right angles to their longitudinal direction and of plate-like second fingers running parallel to the first fingers and anchored to the substrate. The first and second fingers form a capacitor arrangement. The suspension segments, which are anchored with their end region that is distant from the seismic mass to the substrate, and second fingers are electrically isolated, by an isolation strip, from the other remaining layer of monocrystalline material. A passivation layer extends over the isolation strip, and at least partially over the remaining layer. Conductors arranged on the passivation layer and serving as connecting leads for the capacitor arrangement extend across the isolation strip up to the connections of the capacitor arrangement, and are contacted there.
摘要翻译：单晶材料的电容式加速度计传感器的接触是通过电容式加速度计传感器实现的，该传感器具有从布置在基底上的单晶层中蚀刻出的结构，包括仅通过悬挂段连接到基底的地震质量块，其纵向方向响应于从该质量块与其纵向方向成直角地延伸的平行的板状第一指状物的加速度以及平行于第一指状物并且锚固到基底的板状第二指状物的加速度。第一和第二指形成电容器布置。将其远离地震质体的端部区域锚定到基底的悬挂段和第二指状物通过隔离带与另一个剩余的单晶材料层电隔离。钝化层在隔离带上延伸，并且至少部分地覆盖剩余层。布置在钝化层上并且用作电容器布置的连接引线的导体跨过隔离带延伸直到电容器装置的连接，并且在那里接触。

20. 发明申请

US20050275502A1 Method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, and thin-layer component 审中-公开
标题翻译：用于制造薄层部件，特别是薄层高压传感器和薄层部件的方法
公开(公告)号：US20050275502A1
公开(公告)日：2005-12-15
申请号：US11147496
申请日：2005-06-07
申请人： Herbert Goebel , Harald Wanka , Andre Kretschmann , Ralf Henn , Joachim Gluck , Horst Muenzel
发明人： Herbert Goebel , Harald Wanka , Andre Kretschmann , Ralf Henn , Joachim Gluck , Horst Muenzel
IPC分类号： G01L9/04 , G01L9/00 , H01C10/10
CPC分类号： G01L9/0054
摘要： Proposed is a method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, as well as a thin-layer component, where a resistive layer for forming measuring elements, in particular strain gauges, is deposited on an electrically non-conductive surface of a diaphragm layer, a contact-layer system for electrically contacting the measuring elements being deposited on the measuring elements in such a manner, that regions of the measuring elements are situated between each region of the contact-layer system and the diaphragm layer. This is used to provide, in particular, a high-pressure sensor, in which the capacitances of the contacts of the contact-layer system are designed to be symmetric.
摘要翻译：提出了制造薄层部件，特别是薄层高压传感器以及薄层部件的方法，其中用于形成测量元件的电阻层，特别是应变计沉积在隔膜层的非导电表面，用于以这样一种方式使沉积在测量元件上的测量元件电接触的接触层系统，使测量元件的区域位于接触层系统的每个区域之间和隔膜层。这用于特别提供一种高压传感器，其中接触层系统的触点的电容被设计为对称的。

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