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11. 发明授权

US06261974B1 Growth method of a polymer film 有权
标题翻译：聚合物膜的生长方法
公开(公告)号：US06261974B1
公开(公告)日：2001-07-17
申请号：US09333875
申请日：1999-06-14
申请人： Jun Kawahara , Yoshihiro Hayashi , Akinori Nakano , Mikio Shimizu , Tomohisa Nishikawa
发明人： Jun Kawahara , Yoshihiro Hayashi , Akinori Nakano , Mikio Shimizu , Tomohisa Nishikawa
IPC分类号： H01L21469
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/4481 , H01L21/02216 , H01L21/02263 , H01L21/02274 , H01L21/3122
摘要： A DVS-BCB polymer film is grown by heating a divinyl siloxane bisbenzocyclobutene (DVS-BCB) monomer in a vaporization controller with continuously supplying; supplying a carrier gas and maintaining a partial pressure of the DVS-BCB monomer at a state lower than a saturated vapor pressure, thereby to vaporize the monomer; transporting the carrier gas containing the DVS-BCB monomer from the vaporization controller to an evacuated reaction chamber; and spraying the gas on the heated surface of a substrate in the reaction chamber.
摘要翻译：通过在蒸发控制器中连续供应加热二乙烯基硅氧烷双苯并环丁烯（DVS-BCB）单体生长DVS-BCB聚合物膜; 供给载气并将DVS-BCB单体的分压维持在低于饱和蒸汽压的状态，从而使单体蒸发; 将含有DVS-BCB单体的载气从蒸发控制器输送到抽空的反应室; 并将气体喷射在反应室中的基板的加热表面上。

12. 发明申请

US20090278178A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090278178A1
公开(公告)日：2009-11-12
申请号：US12445996
申请日：2008-10-16
申请人： Jun Kawahara , Hironori Yamamoto , Makoto Ueki , Yoshihiro Hayashi
发明人： Jun Kawahara , Hironori Yamamoto , Makoto Ueki , Yoshihiro Hayashi
IPC分类号： H01L29/51 , H01L21/768 , H01L23/48 , H01L21/28
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02362 , H01L21/76801 , H01L21/823475 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor device which includes a MIS FET on a surface of a substrate, an insulating film on the substrate to cover the MIS FET, an opening that gets to an impurity diffusing region formed in the insulating film, another opening that gets to a gate electrode or to an extension part of the gate electrode formed in the insulating film, and an electrically conductive member including mainly copper filled in each of the openings. The insulating film includes a layer including, as main components, silicon, oxygen, carbon and hydrogen (FIG. 1).
摘要翻译：公开了一种半导体器件，其包括在衬底的表面上的MIS FET，在衬底上的绝缘膜以覆盖MIS FET，到达形成在绝缘膜中的杂质扩散区的开口，到达栅电极或形成在绝缘膜中的栅电极的延伸部分，以及主要包括填充在每个开口中的铜的导电构件。绝缘膜包括以硅，氧，碳和氢为主要成分的层（图1）。

13. 发明授权

US06784118B2 Method for vaporization of liquid organic feedstock and method for growth of insulation film 有权
标题翻译：液体有机原料汽化方法及绝缘膜生长方法
公开(公告)号：US06784118B2
公开(公告)日：2004-08-31
申请号：US09838343
申请日：2001-04-20
申请人： Yoshihiro Hayashi , Jun Kawahara , Hirofumi Ono
发明人： Yoshihiro Hayashi , Jun Kawahara , Hirofumi Ono
IPC分类号： H01L2131
CPC分类号： B05D1/62 , C23C16/4481
摘要： In order to vaporize an organic monomer at a high temperature and a high saturated vapor pressure in good efficiency and to grow an organic polymer film at a high rate in high vacuum by a plasma polymerization reaction of the resulting organic monomer gas, a liquid divinylsiloxanebisbenzocyclobutene (DVS-BCB) monomer is mixed with a carrier gas, and the mixture is then sprayed on a vaporization vacuum chamber held at a high temperature to form an aerosol made of liquid fine particles of the organic monomer, and a BCB monomer (organic monomer) is instantaneously vaporized via the aerosol to generate a BCB monomer gas (organic monomer gas). Consequently, the aerosol having a large specific surface area has a large vaporization area, and vaporization occurs by heating at a high temperature before a polymerization reaction occurs. Thus, 0.1 g/min or more of the BCB monomer gas can be formed at 200° C. and a high saturated vapor pressure, and a plasma polymerization BCB film can be formed at a high rate which is at least 5 times higher than in the ordinary film formation.
摘要翻译：为了在高温和高饱和蒸气压下以高效率汽化有机单体，并通过所得有机单体气体的等离子体聚合反应在高真空中高效率地生长有机聚合物膜，液体二乙烯基硅氧烷双苯并环丁烯（ DVS-BCB）单体与载气混合，然后将该混合物喷在保持在高温下的蒸发真空室中，形成由有机单体的液体细颗粒制成的气溶胶，以及BCB单体（有机单体）通过气溶胶瞬间蒸发以产生BCB单体气体（有机单体气体）。因此，具有大的比表面积的气溶胶具有大的蒸发面积，并且在聚合反应发生之前在高温下加热发生蒸发。因此，可以在200℃，高饱和蒸气压下形成0.1g /分钟以上的BCB单体气体，能够以比率高至少高5倍的高速度形成等离子体聚合BCB膜普通电影形成。

14. 发明授权

US08435828B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08435828B2
公开(公告)日：2013-05-07
申请号：US13006034
申请日：2011-01-13
申请人： Hironori Yamamoto , Yoshihiro Hayashi , Jun Kawahara , Tatsuya Usami , Koichi Ohto
发明人： Hironori Yamamoto , Yoshihiro Hayashi , Jun Kawahara , Tatsuya Usami , Koichi Ohto
IPC分类号： H01L51/40
CPC分类号： H01L21/76832 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02274 , H01L21/76826 , H01L21/76829 , H01L21/76883
摘要： A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.
摘要翻译：一种制造半导体器件的方法包括：通过环状硅氧烷的等离子体聚合在下面的膜上形成第一绝缘膜，并且在形成第一绝缘膜之后，通过环状硅氧烷的等离子体聚合在第一绝缘膜上形成第二绝缘膜。第一绝缘膜的沉积速度比第二绝缘膜的沉积速度慢。

15. 发明申请

US20050059788A1 Organic polymer film and method for producing the same 审中-公开
标题翻译：有机聚合物膜及其制造方法
公开(公告)号：US20050059788A1
公开(公告)日：2005-03-17
申请号：US10901189
申请日：2004-07-29
申请人： Nobutaka Kunimi , Masashi Komatsu , Jun Kawahara , Yoshihiro Hayashi
发明人： Nobutaka Kunimi , Masashi Komatsu , Jun Kawahara , Yoshihiro Hayashi
IPC分类号： C08F2/52 , C08F38/00
CPC分类号： C08F2/52
摘要： An organic polymer film with high mechanical strength, which is produced by a method comprising the steps of supplying a raw material gas containing an organic compound having at least one carbon-carbon triple bond in a molecule into a reaction chamber under reduced pressure, exciting the raw material gas in plasma generated in the reaction chamber, depositing the excited raw material gas on a surface of a substrate placed in the reaction chamber, and growing an organic polymer film on the surface of the substrate.
摘要翻译：一种具有高机械强度的有机聚合物膜，其通过包括以下步骤的方法制备：将分子内含有至少一个碳 - 碳三键的有机化合物的原料气体在减压下供给到反应室中，在反应室中产生的等离子体中的原料气体，将被激发的原料气体沉积在放置在反应室中的基板的表面上，并在基板的表面上生长有机聚合物膜。

16. 发明授权

US06344693B1 Semiconductor device and method for manufacturing same 有权
公开(公告)号：US06344693B1
公开(公告)日：2002-02-05
申请号：US09572632
申请日：2000-05-17
申请人： Jun Kawahara , Yoshihiro Hayashi
发明人： Jun Kawahara , Yoshihiro Hayashi
IPC分类号： H01L2348
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76807 , H01L21/7681 , H01L21/76813 , H01L21/76829 , H01L21/76832 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： In a method for manufacturing a semiconductor device having a first insulation film, a second insulation film formed over the first insulation film, an inlayed interconnection layer formed in the second insulation film, and an organic film provided on the inlayed interconnection layer and the second insulation film, the organic film having a dielectric constant lower than the second insulation film, the organic film is grown inside a vacuum chamber.

17. 发明授权

US08426322B2 Method for producing semiconductor device and semiconductor device 失效
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US08426322B2
公开(公告)日：2013-04-23
申请号：US13029866
申请日：2011-02-17
申请人： Hironori Yamamoto , Jun Kawahara , Tomonori Sakaguchi , Yoshihiro Hayashi
发明人： Hironori Yamamoto , Jun Kawahara , Tomonori Sakaguchi , Yoshihiro Hayashi
IPC分类号： H01L21/312
CPC分类号： H01L21/02274 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/76807 , H01L21/7682 , H01L2221/1047
摘要： In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas.
摘要翻译：在半导体装置的制造方法中，将具有环状SiO结构作为主骨架且具有不同结构的两种以上的有机硅氧烷化合物混合，然后蒸发。或者，将这两种或更多种有机硅氧烷化合物材料同时混合并蒸发以产生汽化气体。然后，蒸发的气体与载气一起输送到反应炉。然后，在反应炉中，通过等离子体CVD法或使用汽化气体的等离子体聚合法形成多孔绝缘层。

18. 发明授权

US07101591B2 Production method for copolymer film, copolymer film produced by the forming method and semiconductor device using copolymer film 失效
标题翻译：共聚膜的制造方法，通过成型方法制造的共聚物膜和使用共聚物膜的半导体装置
公开(公告)号：US07101591B2
公开(公告)日：2006-09-05
申请号：US10250329
申请日：2002-07-01
申请人： Yoshihiro Hayashi , Jun Kawahara
发明人： Yoshihiro Hayashi , Jun Kawahara
IPC分类号： B05D3/02 , C23C4/04
CPC分类号： H01L21/76835 , C08G61/12 , C09D4/00 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/312 , H01L21/3122 , H01L21/76829 , Y10S428/901 , Y10S428/938 , Y10T428/31663 , C08G77/00
摘要： This invention provides a process for producing an organic polymer film whereby when using it as an interlayer insulating film in a semiconductor device, the film exhibits higher adhesiveness at its interfaces where other semiconductor materials are in contact with the lower and the upper surface of the film while an effective dielectric constant in the whole organic polymer film can be further reduced. Specifically, a plurality of organic monomers vaporized is sprayed onto a heated substrate surface via plasma generated in a reaction chamber to form a copolymer film comprising frame composed of a plurality of organic monomer units. During the process, relative ratio between the feeding rate of the organic monomer molecules is varied along the progress of the film growth to continuously grow an interlayer insulating film in which films having good mechanical strength and adhesiveness with rich content of siloxane-structure are set near the interfaces (91a,c, 92a,c or 93a,c) and a film having a lower bulk density are arranged as an intermediate layer (91b, 92b or 93b) sandwiched therebetween.
摘要翻译：本发明提供一种制造有机聚合物膜的方法，其中当在半导体器件中使用它作为层间绝缘膜时，该膜在其界面处表现出较高的粘附性，其中其它半导体材料与膜的下表面和上表面接触同时可以进一步降低整个有机聚合物膜中的有效介电常数。具体地说，蒸发的多个有机单体通过在反应室中产生的等离子体喷射到加热的基板表面上，形成由多个有机单体单元组成的框架的共聚物膜。在该过程中，有机单体分子的进料速率之间的相对比例随着膜生长的进行而变化，以连续生长其中具有机械强度和密合性好的硅树脂结构的含量较高的膜的层间绝缘膜界面（91a，c，92a，c或93a，c）和具有较低堆积密度的膜被布置为夹在其间的中间层（91b，92b或93b）。

19. 发明授权

US06709991B1 Method of fabricating semiconductor device with capacitor 失效
标题翻译：制造具有电容器的半导体器件的方法
公开(公告)号：US06709991B1
公开(公告)日：2004-03-23
申请号：US09084578
申请日：1998-05-26
申请人： Jun Kawahara , Shinobu Saito , Yukihiko Maejima , Yoshihiro Hayashi
发明人： Jun Kawahara , Shinobu Saito , Yukihiko Maejima , Yoshihiro Hayashi
IPC分类号： H01L21469
CPC分类号： H01L28/57 , H01L21/02164 , H01L21/0217 , H01L21/02216 , H01L21/02219 , H01L21/02271 , H01L21/31612 , H01L21/76801 , H01L21/76802
摘要： A fabrication method of a semiconductor device with a capacitor is provided, which prevents leakage current from increasing and dielectric breakdown resistance from decreasing during a CVD or dry etching process for forming an insulating film to cover the capacitor. In this method, a lower electrode of a capacitor is formed on a first insulating film. The first insulating film is typically formed on or over a semiconductor substrate. A dielectric film of the capacitor is formed on the lower electrode to be overlapped therewith. An upper electrode of the capacitor is formed on the dielectric film to be overlapped therewith. A second insulating film is formed to cover the capacitor by a thermal CVD process in an atmosphere containing no plasma at a substrate temperature in which hydrogen is prevented from being activated due to heat. A source material of the second insulating film has a property that no hydrogen is generated in the atmosphere through decomposition of the source material during the thermal CVD process.
摘要翻译：提供了具有电容器的半导体器件的制造方法，其防止了在用于形成绝缘膜以覆盖电容器的CVD或干蚀刻工艺期间泄漏电流增加和绝缘击穿电阻降低。在该方法中，在第一绝缘膜上形成电容器的下电极。第一绝缘膜通常形成在半导体衬底上或上方。电容器的电介质膜形成在下电极上以与其重叠。电容器的上电极形成在电介质膜上以与其重叠。形成第二绝缘膜，通过热CVD法在不防止由于热而被活化的基板温度下的不含等离子体的气氛中覆盖电容器。第二绝缘膜的源材料具有通过在热CVD工艺期间源材料分解而在大气中不产生氢的性质。

20. 发明申请

US20120081775A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120081775A1
公开(公告)日：2012-04-05
申请号：US13253179
申请日：2011-10-05
申请人： Peter Andersson Ersman , Jun Kawahara
发明人： Peter Andersson Ersman , Jun Kawahara
IPC分类号： G02F1/155 , G02F1/153
CPC分类号： G02F1/155 , G02F2001/1515 , G02F2001/1519 , G02F2001/1552
摘要： There is disclosed an electrochromic passive-matrix display, wherein each passively addressed pixel cell comprises an electrolyte ionically connecting an electrochromic and electrochemically active polymer and a layer of electrically conducting carbon. Thus, each pixel has a pronounced threshold voltage sufficient for reducing cross talk in an electrochromic display.
摘要翻译：公开了一种电致变色无源矩阵显示器，其中每个被动寻址的像素单元包括使电致变色和电化学活性聚合物和导电碳层间电离连接的电解质。因此，每个像素具有足以减少电致变色显示器中的串扰的显着阈值电压。

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