会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08390046B2
    • 2013-03-05
    • US12947254
    • 2010-11-16
    • Jun KawaharaYoshihiro HayashiIppei Kume
    • Jun KawaharaYoshihiro HayashiIppei Kume
    • H01L29/772
    • H01L23/53238H01L27/0207H01L27/10814H01L27/10852H01L27/10855H01L27/10882H01L27/10894H01L28/91H01L2924/0002H01L2924/00
    • A semiconductor device of the present invention has a semiconductor substrate having a transistor formed thereon; a multi-layered interconnect formed on the semiconductor substrate, and having a plurality of interconnect layers, respectively composed of an interconnect and an insulating film, stacked therein; and a capacitance element having a lower electrode (lower electrode film), a capacitor insulating film, and an upper electrode (upper electrode film), all of which being embedded in the multi-layered interconnect, so as to compose a memory element, and further includes at least one layer of damascene-structured copper interconnect (second-layer interconnect) formed between the capacitance element and the transistor; the upper surface of one of the interconnects (second-layer interconnect) and the lower surface of the capacitance element are aligned nearly in the same plane; and at least one layer of copper interconnect (plate line interconnect) is formed over the capacitance element.
    • 本发明的半导体器件具有形成在其上的晶体管的半导体衬底; 形成在半导体衬底上的多层互连,并且具有分别由互连和绝缘膜组成的多个互连层,堆叠在其中; 以及具有下部电极(下部电极膜),电容器绝缘膜和上部电极(上部电极膜)的电容元件,其全部嵌入在多层互连件中,以构成存储元件,以及 还包括形成在电容元件和晶体管之间的至少一层镶嵌结构的铜互连(第二层互连); 一个互连(第二层互连)和电容元件的下表面的上表面几乎在同一平面内排列; 并且在电容元件上形成至少一层铜互连(板线互连)。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
    • 半导体器件及其制造方法
    • US20090309186A1
    • 2009-12-17
    • US12519706
    • 2007-12-25
    • Naoya InoueIppei KumeJun KawaharaYoshihiro Hayashi
    • Naoya InoueIppei KumeJun KawaharaYoshihiro Hayashi
    • H01L27/06H01L21/02
    • H01L23/5228H01L23/5223H01L23/53238H01L27/0688H01L2924/0002H01L2924/3011H01L2924/00
    • A semiconductor device is produced by fabricating a capacitor element including a lower electrode, a capacitor insulating film, and an upper electrode, and a thin-film resistor element, in the same step. As the lower electrode of the capacitor element is lined with a lower layer wiring layer (Cu wiring), the lower electrode has extremely low resistance substantially. As such, even if the film thickness of the lower electrode becomes thinner, parasitic resistance does not increased. The resistor element is formed to have the same film thickness as that of the lower electrode of the capacitor element. Since the film thickness of the lower electrode is thin, it works as a resistor having high resistance. In the top layer of the passive element, a passive element cap insulating film is provided, which works as an etching stop layer when etching a contact of the upper electrode of the capacitor element.
    • 通过在同一步骤中制造包括下电极,电容器绝缘膜和上电极的电容器元件和薄膜电阻器元件来制造半导体器件。 由于电容器元件的下电极衬有下层布线层(Cu布线),所以下电极具有极低的电阻。 因此,即使下电极的膜厚变薄,寄生电阻也不会增加。 电阻元件形成为具有与电容器元件的下电极相同的膜厚度。 由于下部电极的膜厚薄,所以作为具有高电阻的电阻器。 在无源元件的顶层中,设置无源元件帽绝缘膜,当蚀刻电容器元件的上电极的接触时,其被用作蚀刻停止层。
    • 9. 发明授权
    • Method for vaporization of liquid organic feedstock and method for growth of insulation film
    • 液体有机原料汽化方法及绝缘膜生长方法
    • US06784118B2
    • 2004-08-31
    • US09838343
    • 2001-04-20
    • Yoshihiro HayashiJun KawaharaHirofumi Ono
    • Yoshihiro HayashiJun KawaharaHirofumi Ono
    • H01L2131
    • B05D1/62C23C16/4481
    • In order to vaporize an organic monomer at a high temperature and a high saturated vapor pressure in good efficiency and to grow an organic polymer film at a high rate in high vacuum by a plasma polymerization reaction of the resulting organic monomer gas, a liquid divinylsiloxanebisbenzocyclobutene (DVS-BCB) monomer is mixed with a carrier gas, and the mixture is then sprayed on a vaporization vacuum chamber held at a high temperature to form an aerosol made of liquid fine particles of the organic monomer, and a BCB monomer (organic monomer) is instantaneously vaporized via the aerosol to generate a BCB monomer gas (organic monomer gas). Consequently, the aerosol having a large specific surface area has a large vaporization area, and vaporization occurs by heating at a high temperature before a polymerization reaction occurs. Thus, 0.1 g/min or more of the BCB monomer gas can be formed at 200° C. and a high saturated vapor pressure, and a plasma polymerization BCB film can be formed at a high rate which is at least 5 times higher than in the ordinary film formation.
    • 为了在高温和高饱和蒸气压下以高效率汽化有机单体,并通过所得有机单体气体的等离子体聚合反应在高真空中高效率地生长有机聚合物膜,液体二乙烯基硅氧烷双苯并环丁烯( DVS-BCB)单体与载气混合,然后将该混合物喷在保持在高温下的蒸发真空室中,形成由有机单体的液体细颗粒制成的气溶胶,以及BCB单体(有机单体) 通过气溶胶瞬间蒸发以产生BCB单体气体(有机单体气体)。 因此,具有大的比表面积的气溶胶具有大的蒸发面积,并且在聚合反应发生之前在高温下加热发生蒸发。 因此,可以在200℃,高饱和蒸气压下形成0.1g /分钟以上的BCB单体气体,能够以比率高至少高5倍的高速度形成等离子体聚合BCB膜 普通电影形成。