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11. 发明专利

JP2006120870A Wire formation method and device thereof 审中-公开
标题翻译：线形成方法及其装置
公开(公告)号：JP2006120870A
公开(公告)日：2006-05-11
申请号：JP2004307354
申请日：2004-10-21
申请人： Ebara Corp , 株式会社荏原製作所
发明人： FUKUNAGA AKIRA , TSUJIMURA MANABU
IPC分类号： H01L23/52 , C25D7/12 , H01L21/3205
CPC分类号： H01L21/76873 , C25D7/123 , C25D17/001 , H01L21/288 , H01L21/32115 , H01L21/32125 , H01L21/76849 , H01L21/76877
摘要： PROBLEM TO BE SOLVED: To uniformly form a wire material with sufficient adhesion entirely on a substrate surface by electroplating even if a design rule gets strict to form a highly reliable embedded wire.
SOLUTION: A conductive film insoluble in an electrolytic plating liquid for forming the film of a wiring material is formed on the surface of a substrate having a wiring recess formed within an insulation film. The wiring material is formed on the surface of the conductive film by means of electrolytic plating using the conductive film as a seed film while embedding it in the wiring recess. An excess wiring material formed on the surface of the conductive film is removed, and a wire is formed of the wiring material embedded in the recess.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使设计规则得到严格以形成高可靠性的嵌入式线，也能通过电镀均匀地形成具有完全粘附在基板表面上的线材。解决方案：在具有形成在绝缘膜内的布线凹槽的基板的表面上形成不溶于用于形成布线材料的膜的电解电镀液中的导电膜。通过使用导电膜作为种子膜的电解电镀将导线膜的表面嵌入导线膜的表面，同时将布线材料嵌入布线槽中，形成布线材料。去除形成在导电膜表面上的多余布线材料，并且布线材料埋设在凹槽中形成。版权所有（C）2006，JPO＆NCIPI

12. 发明专利

JP2006077275A Method and device for depositing metal film 有权
标题翻译：用于沉积金属膜的方法和装置
公开(公告)号：JP2006077275A
公开(公告)日：2006-03-23
申请号：JP2004260527
申请日：2004-09-08
申请人： Ebara Corp , 株式会社荏原製作所
发明人： O CHIKAAKI , TAKAGI DAISUKE , TASHIRO AKIHIKO , FUKUNAGA YUKIO , FUKUNAGA AKIRA , OWATARI AKIRA
IPC分类号： C23C18/16 , H01L21/288
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1669 , C23C18/32 , H01L21/76846 , H01L21/76849 , H01L21/76874
摘要： PROBLEM TO BE SOLVED: To continuously deposit metal films with different film quality in a film thickness direction using the same treatment liquid.
SOLUTION: A substrate in which buried wiring is formed in a recessed part for wiring at the surface is prepared. As a treatment liquid is contacted with the surface of the substrate, the relative fluidization state of the treatment liquid to the surface of the substrate is changed, so as to continuously deposit metal films with different film quality in a film thickness direction on the surface of the wiring.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：使用相同的处理液体在膜厚度方向上连续沉积具有不同膜质量的金属膜。＆lt; P＆gt;解决方案：准备在表面的布线的凹部形成埋入布线的基板。当处理液与基材表面接触时，改变处理液相对于基材表面的相对流化状态，从而在膜厚度方向上连续沉积具有不同膜质量的金属膜接线。版权所有（C）2006，JPO＆NCIPI

13. 发明专利

JP2005243845A Substrate treatment method and substrate treatment device 审中-公开
标题翻译：基板处理方法和基板处理装置
公开(公告)号：JP2005243845A
公开(公告)日：2005-09-08
申请号：JP2004050407
申请日：2004-02-25
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TAKAGI DAISUKE , O CHIKAAKI , TASHIRO AKIHIKO , FUKUNAGA YUKIO , FUKUNAGA AKIRA , SHIMOYAMA TADASHI
IPC分类号： C23C18/16 , C23C8/36 , C23C18/31 , H01L21/288 , H01L21/3205 , H01L21/677 , H01L21/68 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To protect wiring by selectively covering the exposed surface of the wiring with a wiring protective film improved in a barrier property to the wiring. SOLUTION: At the time of protecting the wiring formed on the surface of a substrate by selectively forming the protective film on the exposed surface of the wiring, pre-treatment is performed on the base surface to be plated of the substrate, and the protective film is selectively formed on the pre-treated base surface to be plated of the substrate by performing electroless plating. Then the electroless-plated substrate is cleaned and dried and plasma treatment is performed on the surface of the dried substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过用布线保护膜选择性地覆盖布线的暴露表面来保护布线，从而提高了布线的阻挡性能。解决方案：在通过在布线的暴露表面上选择性地形成保护膜来保护形成在基板表面上的布线时，对要被镀的基底进行预处理，以及通过进行无电解电镀，在预处理的基板表面上选择性地形成保护膜。然后对无电镀基板进行清洗和干燥，并对干燥的基板的表面进行等离子体处理。版权所有（C）2005，JPO＆NCIPI

14. 发明专利

JP2005206905A Substrate treatment method and device, and treatment liquid 审中-公开
标题翻译：基板处理方法和设备，以及处理液体
公开(公告)号：JP2005206905A
公开(公告)日：2005-08-04
申请号：JP2004016379
申请日：2004-01-23
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TAKAGI DAISUKE , SAHODA TAKESHI , O CHIKAAKI , TASHIRO AKIHIKO , FUKUNAGA AKIRA
IPC分类号： C23C18/18 , C23C18/16 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To efficiently form a wiring protective film of high quality particularly without deteriorating the electrical properties of wiring by performing pretreatment such as the application of a catalyst and pre-rinsing to a substrate with an optimized treatment liquid. SOLUTION: In the substrate treatment method, at the time of selectively forming a metal film on the exposed surface of a base metal formed on the surface of a substrate by electroless plating, pretreatment to the surface of the base metal is performed with a treatment liquid comprising components forming a complex with the base metal and catalyst metal ions. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了有效地形成高质量的布线保护膜，特别是通过使用优化的处理液体进行催化剂的预处理和对基板的预漂洗而不会使布线的电特性恶化。解决方案：在基板处理方法中，在通过化学镀在基板表面上形成的贱金属的露出表面上选择性地形成金属膜时，对贱金属的表面进行预处理，包含与母体金属和催化剂金属离子形成络合物的组分的处理液。版权所有（C）2005，JPO＆NCIPI

15. 发明专利

JP2006231517A Polishing device 有权
标题翻译：抛光装置
公开(公告)号：JP2006231517A
公开(公告)日：2006-09-07
申请号：JP2006139857
申请日：2006-05-19
申请人： Ebara Corp , Yuzo Mori , 株式会社荏原製作所 , 勇蔵森
发明人： MORI YUZO , KIMURA NORIO , SHIRAKASHI MICHIHIKO , TAIMA YASUSHI , FUKUNAGA AKIRA
IPC分类号： B24B37/00 , B24B57/02 , C25F7/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing device, capable of reducing loads of wafer cleaning after polishing and waste fluid treatment, and efficiently performing polishing work while restricting use of chemicals. SOLUTION: This polishing device comprises a top ring 14 to hold the material to be polished, polishing members 10 and 24 having ion exchanger, polishing fluid supply means 32, 30, and 26 to supply polishing fluid, and a power source 20 to form an electric field in the polishing fluid. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种抛光装置，其能够减少抛光和废液处理后的晶片清洗负荷，并且有效地进行抛光工作同时限制化学品的使用。解决方案：该抛光装置包括用于保持待抛光材料的顶环14，具有离子交换器的抛光构件10和24，用于提供抛光流体的抛光液供给装置32,30和26，以及电源20 以在抛光液中形成电场。版权所有（C）2006，JPO＆NCIPI

16. 发明专利

JP2006009131A Method and apparatus for processing substrate 审中-公开
标题翻译：用于处理基板的方法和装置
公开(公告)号：JP2006009131A
公开(公告)日：2006-01-12
申请号：JP2004192061
申请日：2004-06-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： O CHIKAAKI , TAKAGI DAISUKE , TASHIRO AKIHIKO , NISHIOKA YUKIKO , FUKUNAGA YUKIO , FUKUNAGA AKIRA , OWATARI AKIRA
IPC分类号： C23C18/18 , C23C18/31 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for processing a substrate capable of consistently depositing a protective film by the electroless plating on a surface of a wire formed by CMP (chemical and mechanical polishing) without degrading the wiring reliability, and increasing the throughput. SOLUTION: A substrate is prepared, in which a wiring recess is formed in the surface, and film deposition is performed while a wiring material is embedded in the wiring recess, excessive wiring material other than that in the recess is removed by the chemical and mechanical polishing, and the wiring material in the recess is formed into a wire. The surface of the substrate is brought into contact with a cleaning solution immediately after the polishing to remove polishing residue and an oxide film on the surface of the wire, the surface of the substrate brought into contact with cleaning solution is brought into contact with a catalyst processing solution to provide a catalyst on the surface of the wire, and the surface of the substrate with the catalyst provided thereon is cleaned and dried. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于处理基板的方法和设备，该基板能够通过化学镀一次性地在由CMP（化学和机械抛光）形成的线的表面上沉积保护膜而不降低布线可靠性，并提高吞吐量。解决方案：制备基板，其中在表面中形成布线凹槽，并且在布线材料嵌入布线凹槽中的同时进行膜沉积，除了凹部中的布线材料以外的其它布线材料被除去化学和机械抛光，凹槽中的布线材料形成线。使基板表面立即与抛光后的清洗液接触，以除去抛光残留物和金属丝表面的氧化膜，与清洗液接触的基板表面与催化剂接触处理溶液以在丝的表面上提供催化剂，并且将其上提供有催化剂的基材的表面清洁和干燥。版权所有（C）2006，JPO＆NCIPI

17. 发明专利

JP2005327938A Method for polishing thin film formed on substrate 有权
标题翻译：在衬底上形成薄膜的方法
公开(公告)号：JP2005327938A
公开(公告)日：2005-11-24
申请号：JP2004145535
申请日：2004-05-14
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SHIMA SHOHEI , FUKUNAGA AKIRA
IPC分类号： H01L21/304 , B24B49/03 , B24B49/12 , G01B11/06 , G01J4/00 , G01N21/21
CPC分类号： B24B49/03 , B24B37/042 , B24B49/12 , G01B11/0641 , G01N21/211
摘要： PROBLEM TO BE SOLVED: To perform CMP treatment to a thin film formed on a substrate more accurately than a conventional one, by measuring accurately its film thickness when subjecting it to the CMP treatment.
SOLUTION: A method for polishing a thin film formed on a substrate includes a step for sampling a substrate from a substrate cassette loaded in a CMP apparatus, a step for so subjecting a thin film formed on the substrate to CMP treatment as to flatten the thin film while leaving its film thickness, a step for measuring values of Δ and Ψ relative to the thin film by ellipsometry, a step for so bringing the thin film into room temperature as to form it into an oxide film, a step for so measuring the values of Δ and Ψ of the oxide film every fixed time interval as to determine a variation with time of the film thickness of the oxide film, and a step for setting the polishing condition of a thin film of the other substrate based on data relative to the variation with time when polishing the thin film.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过在对CMP处理进行处理时，通过精确地测量其膜厚，对比在现有技术中更精确地对形成在基板上的薄膜进行CMP处理。解决方案：用于抛光形成在衬底上的薄膜的方法包括从装载在CMP设备中的衬底盒取样衬底的步骤，将形成在衬底上的薄膜进行CMP处理的步骤，在保持薄膜厚度的同时使薄膜平坦化，通过椭偏仪测量相对于薄膜的Δ和Ψ的值的步骤，使薄膜变成室温以形成氧化膜的步骤，因此每隔固定时间间隔测量氧化膜的Δ和Ψ的值，以确定氧化膜的膜厚度随时间的变化，以及基于另一个基板的薄膜的抛光条件设定步骤相对于抛光薄膜时随时间变化的数据。版权所有（C）2006，JPO＆NCIPI

18. 发明专利

JP2005277396A Substrate processing method and apparatus 审中-公开
标题翻译：基板加工方法和装置
公开(公告)号：JP2005277396A
公开(公告)日：2005-10-06
申请号：JP2005041765
申请日：2005-02-18
申请人： Ebara Corp , 株式会社荏原製作所
发明人： FUKUNAGA AKIRA , NOMURA SUEKAZU , TOKUSHIGE KATSUHIKO , TSUJIMURA MANABU
IPC分类号： H01L21/3065 , H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method and apparatus capable of polishing the metal film of a substrate in such a state that a native oxide on the metal film formed on the substrate is removed , and of realizing the uniform planarization of the substrate. SOLUTION: The substrate processing apparatus includes a processing unit for removing a native oxide of a metal that is formed on the surface of the metal film on a wafer W and polishing units 16 and 17 for performing chemical mechanical polishing of the metal film of the wafer W. The processing unit is a wet etching unit 14 using a chemical liquid capable of dissolving the native oxide of the metal or a dry etching unit 206 using a gas capable of reducing or etching the native oxide of the metal. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在去除形成在基板上的金属膜上的天然氧化物的状态下抛光基板的金属膜的基板处理方法和装置，并且实现均匀的平坦化的基底。解决方案：基板处理装置包括用于去除在晶片W上形成在金属膜的表面上的金属的天然氧化物的处理单元和用于进行金属膜的化学机械抛光的抛光单元16和17 处理单元是使用能够还原或蚀刻金属的天然氧化物的气体，使用能够溶解金属的天然氧化物的化学液体或干蚀刻单元206的湿蚀刻单元14。版权所有（C）2006，JPO＆NCIPI

19. 发明专利

JP2005109362A Processing liquid, and substrate processing method and apparatus using processing liquid 审中-公开
标题翻译：处理液和基板处理方法和使用处理液的装置
公开(公告)号：JP2005109362A
公开(公告)日：2005-04-21
申请号：JP2003343875
申请日：2003-10-01
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KATAKABE ICHIRO , FUKUNAGA AKIRA , INOUE KATSUTAKA
IPC分类号： C23C18/16 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a processing liquid and a substrate processing method and apparatus using the processing liquid whereby any water mark can be suppressed from being formed on the surface of a low-permittivity material (low-k material).
SOLUTION: The processing liquid is the one for processing the substrate wherein a low-permittivity material is exposed to the external at least in a portion of the surface thereof. The processing liquid has at least a hydrophilic group and a hydrophobic group respectively in its one molecule, and includes an organic substance having volatility at a room temperature.
COPYRIGHT: (C)2005,JPO&NCIPI

20. 发明专利

JP2005044913A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005044913A
公开(公告)日：2005-02-17
申请号：JP2003201468
申请日：2003-07-25
申请人： Ebara Corp , 株式会社荏原製作所
发明人： FUKUNAGA AKIRA , TSUJIMURA MANABU
IPC分类号： C23C18/16 , C23C18/31 , C23C18/38 , C23C18/42 , C25D5/10 , C25D5/56 , C25D7/12 , C25D19/00 , H01L21/304 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To restore corrosion and thickness reduction of a wiring material which occur on an exposed surface of wiring in a flattening process when embedded wiring is formed by a damascene process, and to manufacture a semiconductor device with high yield.
SOLUTION: A substrate W where a minute recess 4 for wiring is formed is prepared in an interlayer insulating film 2 arranged on a surface. The wiring material is formed on the surface of the substrate W, and the wiring material is embedded in the minute recess 4. The wiring material which is excessively formed on the surface of the substrate is removed and flattened, and wiring 8 formed of the wiring material is made. A thickness reduction part 40 formed on the exposed surface of wiring 8 is restored in a flattening processing.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了在通过镶嵌工艺形成嵌入布线时，在平坦化工艺中在布线的暴露表面上恢复出现在布线材料的腐蚀和厚度减小，并且以高产率制造半导体器件。解决方案：在布置在表面上的层间绝缘膜2中制备用于形成用于布线的微小凹部4的基板W. 布线材料形成在基板W的表面上，并且布线材料嵌入微小凹槽4中。过度形成在基板表面上的布线材料被去除并变平，并且由布线形成的布线8 材料制成。在扁平化处理中恢复形成在布线8的露出面上的厚度减小部40。版权所有（C）2005，JPO＆NCIPI

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