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1. 发明专利

TW200301717A 電解加工裝置及方法失效
简体标题：电解加工设备及方法
公开(公告)号：TW200301717A
公开(公告)日：2003-07-16
申请号：TW092100219
申请日：2003-01-07
申请人：森勇藏 YUZO MORI , 荏原製作所股份有限公司 EBARA CORPORATION
发明人：森勇藏 YUZO MORI , 白充彥 MITSUHIKO SHIRAKASHI , 川正行 MASAYUKI KUMEKAWA , 安田穗積 HOZUMI YASUDA , 小嚴貴 ITSUKI KOBATA , 當間康 YASUSHI TOMA
IPC分类号： B23H
CPC分类号： B23H3/08 , B23H3/00 , B23H5/08 , C25F3/00 , C25F7/00
摘要：一種電解加工裝置及方法，可以高加工精度完成基板加工，並可形成具有高精度外形之希冀的加工基板外形，該電解加工裝置包括：固定座，用於固定基板；加工電極，可靠近該基板；饋電電極，用於將電力供應至該基板；離子交換器，配置於該基板與加工電極間之空間中或該基板與饋電電極間之空間中；流體供應部，用於將流體供應至該空間中；電源，用於施加電壓於加工電極與饋電電極之間；驅動部，用於使彼此面對之基板與加工電極得以進行相對運動；以及數值控制器，用於完成驅動部的數值控制。
简体摘要：一种电解加工设备及方法，可以高加工精度完成基板加工，并可形成具有高精度外形之希冀的加工基板外形，该电解加工设备包括：固定座，用于固定基板；加工电极，可靠近该基板；馈电电极，用于将电力供应至该基板；离子交换器，配置于该基板与加工电极间之空间中或该基板与馈电电极间之空间中；流体供应部，用于将流体供应至该空间中；电源，用于施加电压于加工电极与馈电电极之间；驱动部，用于使彼此面对之基板与加工电极得以进行相对运动；以及数值控制器，用于完成驱动部的数值控制。

2. 发明专利

TWI271246B 電解加工裝置及方法 ELECTROLYTIC PROCESSING APPARATUS AND METHOD 失效
简体标题：电解加工设备及方法 ELECTROLYTIC PROCESSING APPARATUS AND METHOD
公开(公告)号：TWI271246B
公开(公告)日：2007-01-21
申请号：TW092100219
申请日：2003-01-07
申请人：森勇藏 YUZO MORI , 荏原製作所股份有限公司 EBARA CORPORATION
发明人：森勇藏 YUZO MORI , 白充彥 MITSUHIKO SHIRAKASHI , 安田穗積 HOZUMI YASUDA , 小嚴貴 ITSUKI KOBATA , 當間康 YASUSHI TOMA
IPC分类号： B23H
CPC分类号： B23H3/08 , B23H3/00 , B23H5/08 , C25F3/00 , C25F7/00
摘要：一種電解加工裝置及方法，可以高加工精度完成基板加工，並可形成具有高精度外形之希冀的加工基板外形，該電解加工裝置包括：固定座，用於固定基板；加工電極，可靠近該基板；饋電電極，用於將電力供應至該基板；離子交換器，配置於該基板與加工電極間之空間中或該基板與饋電電極間之空間中；流體供應部，用於將流體供應至該空間中；電源，用於施加電壓於加工電極與饋電電極之間；驅動部，用於使彼此面對之基板與加工電極得以進行相對運動；以及數值控制器，用於完成驅動部的數值控制。
简体摘要：一种电解加工设备及方法，可以高加工精度完成基板加工，并可形成具有高精度外形之希冀的加工基板外形，该电解加工设备包括：固定座，用于固定基板；加工电极，可靠近该基板；馈电电极，用于将电力供应至该基板；离子交换器，配置于该基板与加工电极间之空间中或该基板与馈电电极间之空间中；流体供应部，用于将流体供应至该空间中；电源，用于施加电压于加工电极与馈电电极之间；驱动部，用于使彼此面对之基板与加工电极得以进行相对运动；以及数值控制器，用于完成驱动部的数值控制。

3. 发明专利

JP2012015414A Light emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2012015414A
公开(公告)日：2012-01-19
申请号：JP2010152267
申请日：2010-07-02
申请人： Yuzo Mori , Sharp Corp , シャープ株式会社 , 勇蔵森
发明人： NAKAMOTO ATSUSHI , MORI YUZO , ASAI SHIGEMI , YAMAMOTO TATSUSHI
IPC分类号： H01L33/54
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device capable of improving extraction efficiency of light radiated by a light emitting element by sealing the light emitting element with a sealing member of an appropriate material, size or shape.SOLUTION: In the light emitting device, an LED chip 1 is mounted on a substrate 2 and the LED chip 1 is sealed with a sealing member 3. The sealing member 3 has a substantially hemispherical shape. A substantial center of an ITO layer 11 of the LED chip 1 is arranged to match the spherical center of the sealing member 3. Moreover, a relationship of Na≥Nx and d≥s×(Na/Nx) is satisfied, where a diameter of the sealing member 3 is d, a dimension of the LED chip 1 along the substrate 2 plane is s, a refractive index of the sealing member 3 is Na, and a refractive index of a medium outside the sealing member 3 is Nx.
摘要翻译：解决的问题：提供一种能够通过用适当材料，尺寸或形状的密封构件密封发光元件来提高由发光元件辐射的光的提取效率的发光器件。解决方案：在发光器件中，LED芯片1安装在基板2上，并且LED芯片1被密封部件3密封。密封部件3具有大致半球形状。 LED芯片1的ITO层11的大致中心配置成与密封部件3的球面中心一致。此外，满足Na≥Nx和d≥s×（Na / Nx）的关系，其中，密封构件3的d的折射率为d，密封构件3的折射率为Na，密封构件3的外侧的介质的折射率为Nx。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2010214771A Printer 审中-公开
标题翻译：打印机
公开(公告)号：JP2010214771A
公开(公告)日：2010-09-30
申请号：JP2009064244
申请日：2009-03-17
申请人： Yuzo Mori , Sharp Corp , シャープ株式会社 , 勇蔵森
发明人： TSUNASAWA HIROSHI , TANAKA TOSHIYUKI , MORI YUZO
IPC分类号： B41F15/36 , B41F15/08
摘要： PROBLEM TO BE SOLVED: To provide a printer which can correct a pattern shape formed on a base material with high precision.
SOLUTION: The printer is a device for correcting the pattern shape formed on a printing plate 12 by applying tension in a planar direction of the printing plate to the printing plate 12. The printing device has a pretension applying device 20, a rod-like electroconductive pattern 31 capable of thermally expanding and contracting with the change of temperature, and a temperature control section 50. The pretention applying device 20 is connected to the periphery of the printing plate 12 and applies pretension to the printing plate 12. The rod-like electroconductive pattern 31 is arranged along the periphery of the printing plate 12 and applies the compression force in a direction against the pretension to the printing plate 12. The temperature control section 50 controls the temperature of the rod-like electroconductive pattern 31. The compression force applied to the printing plate 12 changes by the thermal expansion and contraction of the rod-like electroconductive pattern 31 and predetermined tension is applied to the printing plate 12.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以高精度校正形成在基材上的图案形状的打印机。解决方案：打印机是通过向印版12施加印版的平面方向的张力来校正形成在印版12上的图案形状的装置。打印装置具有预张紧装置20，杆能够随着温度变化而热膨胀和收缩的导电图案31以及温度控制部50.预制施加装置20连接到印版12的周边，并将预张力施加到印版12上。杆形状的导电图案31沿着印版12的周边布置，并且将压缩力沿抗张力的方向施加到印版12.温度控制部分50控制棒状导电图案31的温度。施加到印版12的压缩力由棒状导电图案31和Pr的热膨胀和收缩而变化将预定的张力施加到印版12.版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008028023A Plasma treatment method and device 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：JP2008028023A
公开(公告)日：2008-02-07
申请号：JP2006196977
申请日：2006-07-19
申请人： Yuzo Mori , Sharp Corp , シャープ株式会社 , 勇蔵森
发明人： FUNAKI TAKESHI , MORI YUZO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment method capable of working a semiconductor substrate of silicon, group III nitride or the like, and an insulating substrate of glass or the like in the whole surface of the substrate uniformly with high speed.
SOLUTION: A rotary electrode 2 having a suction air passage 11 and exhaust passages 12a, 12b is rotated about a rotary axis 3a whereby reactant gas is guided in between the rotary electrode 2 and a workpiece 6, then, is discharged out of the exhaust passages 12a, 12b through the suction air passage 11. The stagnation of the reactant gas can be cleared between the rotary electrode 2 and the workpiece 6 by a simple constitution.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够以高速均匀地在基板的整个表面上加工硅，III族氮化物等的半导体衬底和玻璃等的绝缘衬底的等离子体处理方法。解决方案：具有吸入空气通道11和排气通道12a，12b的旋转电极2围绕旋转轴线3a旋转，由此反应气体被引导到旋转电极2和工件6之间，然后被排出排气通道12a，12b通过吸入空气通道11.通过简单的结构，可以在旋转电极2和工件6之间清除反应气体的停滞。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007142174A Processing method of group iii nitride semiconductor 审中-公开
标题翻译： III类氮化物半导体的加工方法
公开(公告)号：JP2007142174A
公开(公告)日：2007-06-07
申请号：JP2005334273
申请日：2005-11-18
申请人： Yuzo Mori , Sharp Corp , シャープ株式会社 , 勇蔵森
发明人： FUNAKI TAKESHI , MORI YUZO
IPC分类号： H01L21/3065 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a processing method of group III nitride semiconductor processible uniformly and at high speed on whole surface of group III nitride semiconductor. SOLUTION: In chlorine containing gas atmosphere under the atmospheric pressure or near the atmospheric pressure, there are arranged a cylindrical rotating electrode 2 and a substrate stage 4 with an open spacing. Plasma 10 is generated between the cylindrical rotating electrode 2 and the substrate stage 4 by supplying high-frequency power to the cylindrical rotating electrode 2. A group III nitride semiconductor 6 is processed by bringing the surface of the group III nitride semiconductor 6 fixed to the substrate stage 4 via a first substrate holder 11 into contact with the region, where the distribution of the amount of surface processing is gently distributed in all the regions of the plasma 10 between the cylindrical rotating electrode 2 and the substrate stage 4. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供在III族氮化物半导体的整个表面上均匀且高速加工的III族氮化物半导体的处理方法。解决方案：在大气压或接近大气压下的含氯气体气氛中，设置有开放间隔的圆柱形旋转电极2和衬底台4。通过向圆筒状的旋转电极2供给高频电力，在圆筒状的旋转电极2与基板载物台4之间产生等离子体10.通过使III族氮化物半导体6的表面固定在衬底台4经由第一衬底保持器11与区域接触，其中表面处理量的分布温和地分布在圆柱形旋转电极2和衬底台4之间的等离子体10的所有区域中。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007073940A Processing method of group iii nitride semiconductor, group iii nitride semiconductor light emitting element, manufacturing method thereof, group iii nitride semiconductor laser element, and manufacturing method thereof 有权
标题翻译： III族氮化物半导体，III族氮化物半导体发光元件及其制造方法III族氮化物半导体激光元件及其制造方法的处理方法
公开(公告)号：JP2007073940A
公开(公告)日：2007-03-22
申请号：JP2006214566
申请日：2006-08-07
申请人： Yuzo Mori , Sharp Corp , シャープ株式会社 , 勇蔵森
发明人： NAKAHAMA KOJI , KANETSUKI RITSUO , FUNAKI TAKESHI , MORI YUZO
IPC分类号： H01L21/3065 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a method of processing a group III nitride semiconductor at high speed and high precision, with no damage on its surface. SOLUTION: A plasma 13 is generated between a cylindrical rotary electrode 2 and the surface of a group III nitride semiconductor 6, in the gas atmosphere containing chlorine under the atmospheric pressure or near it, so that the plasma 13 contacts the surface of the group III nitride semiconductor 6 for processing the surface of the group III nitride semiconductor 6. Here, the group III nitride semiconductor 6 is heated upto the boiling temperature 200°C of Ga chloride or higher using a heater 5. The mixture gas of chlorine gas and rare gas is used as the chlorine-contained gas. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供以高速和高精度处理III族氮化物半导体的方法，其表面没有损坏。解决方案：在大气压或接近其的氯气气氛中，在圆柱形旋转电极2和III族氮化物半导体6的表面之间产生等离子体13，使得等离子体13接触用于处理III族氮化物半导体6的表面的III族氮化物半导体6.这里，使用加热器5将III族氮化物半导体6加热到高于氯化镓或更高的沸点温度200℃。氯气的混合气体使用气体和稀有气体作为含氯气体。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006175416A Wetting device 审中-公开
标题翻译：润湿装置
公开(公告)号：JP2006175416A
公开(公告)日：2006-07-06
申请号：JP2004374349
申请日：2004-12-24
申请人： Yuzo Mori , Sharp Corp , シャープ株式会社 , 森勇蔵
发明人： MAKIOKA HIROSHIGE , ARIKAWA KAZUHIKO , MORITA KENICHI , ISHIDA JUNICHI , KANDA HIROFUMI , YOSHII MOTOYASU , YAMAMOTO YUICHI , MORI YUZO
IPC分类号： B08B3/02 , B08B3/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a wetting device having a high capacity of peeling and removing a removal object matter deposited on a cleaning object regardless of the electrical characteristics of the cleaning object, i.e., a high cleaning power and a high cleaning speed, which device requires reduced equipment cost and has a low environmental load. SOLUTION: The wetting device 1 includes a nozzle 2 comprising a nozzle main body 4 having a slit-shaped opening part 17 and a radical generating means 5, a substrate transfer means 3, a first pure water supply means 7, and a second pure water supply means 8. The radical generating means 5 is installed at the outside of the nozzle main body 4, a cleaning liquid 10 is prepared by mixing the water flow of pure water discharged from the slit-shaped opening part 17 with the pure water containing active species such as radicals generated in the radical generating means 5, and the cleaning liquid 10 is supplied onto a surface 9a to to be cleaned of the substrate 9. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种润湿装置，其具有高的剥离能力和除去清洁物体上沉积的清除物体，而与清洁对象的电气特性无关，即高清洁力和高清洁度速度，哪个装置需要降低设备成本并且具有低的环境负荷。润湿装置1包括喷嘴2，喷嘴2包括具有狭缝状开口部17和自由基发生装置5的喷嘴主体4，基板输送装置3，第一纯水供给装置7和第二纯水供给装置8.自由基产生装置5安装在喷嘴主体4的外侧，通过将从狭缝状开口部17排出的纯水的水流与纯水含有活性物质的水，例如在自由基产生装置5中产生的自由基，以及清洗液10被供给到要被清洁的基材9的表面9a上。（C）2006，JPO＆NCIPI

9. 发明专利

JP2006022392A Plasma treatment method with the use of rotating electrode, and apparatus therefor 有权
标题翻译：使用旋转电极的等离子体处理方法及其设备
公开(公告)号：JP2006022392A
公开(公告)日：2006-01-26
申请号：JP2004203421
申请日：2004-07-09
申请人： Yuzo Mori , 森勇蔵
发明人： MORI YUZO
IPC分类号： C23C16/509 , C23F4/00 , H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment method utilizing a plasma CVM process or a plasma CVD process with the use of such a rotating electrode as to make a minimum machined site axially symmetrical, when used in the plasma CVM process for machining a workpiece while removing a volatile substance, or as to make a minimum film-formed part axially symmetrical, when used in the plasma CVD process for forming a film, and to provide an apparatus therefor. SOLUTION: This plasma treatment apparatus has a rotating electrode 200 and the workpiece 201 arranged in the atmosphere of gases containing a reactant gas and an inert gas. The plasma treatment method comprises: relatively scanning the workpiece and the rotating electrode in X and Y axial directions, and simultaneously relatively displacing the rotating electrode and the workpiece in a Z axial direction so as to form a predetermined gap 203 between the rotating electrode having a rotating shaft 202 in the Z axial direction and the workpiece; rotating the rotating electrode to produce a vortex flow in the vicinity of the gap; applying high-frequency voltage to the rotating electrode to generate plasma in the gap; and using a neutral radical formed from the reactant gas to machine the surface of the workpiece or form a film on the surface of the workpiece. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供使用等离子体CVM工艺或等离子体CVD工艺的等离子体处理方法，使用这种旋转电极使得最小加工位置轴向对称，当用于等离子体CVM工艺中时当用于形成膜的等离子体CVD工艺中时，在移除挥发性物质的同时加工工件，或者使最小的薄膜形成部件轴向对称，并提供其设备。解决方案：该等离子体处理装置具有设置在含有反应气体和惰性气体的气体气氛中的旋转电极200和工件201。等离子体处理方法包括：在X轴和Y轴方向上相对地扫描工件和旋转电极，并且同时使旋转电极和工件沿Z轴方向相对移位，以便在旋转电极之间形成预定间隙203 旋转轴202在Z轴方向和工件上; 旋转旋转电极以在间隙附近产生涡流; 向所述旋转电极施加高频电压以在所述间隙中产生等离子体; 并使用由反应气体形成的中性自由基来加工工件的表面或在工件的表面上形成薄膜。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2004363504A Method and device for wet treatment 有权
公开(公告)号：JP2004363504A
公开(公告)日：2004-12-24
申请号：JP2003163050
申请日：2003-06-06
申请人： Yuzo Mori , Sharp Corp , シャープ株式会社 , 勇蔵森
发明人： YAMAMOTO YUICHI , YONETANI MASATO , MORI YUZO
IPC分类号： H01L21/308 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a wet treatment method of high treatment velocity without using an organic solvent for removing a resist and a washing organic substance 22 from a substrate 10, by producing a radical active species of solvent origin such as hydroxyl group radical 55 and oxygen radical 71 near the substrate 10, and supplying pure water comprising radical of high concentration to the substrate 10 as a treatment liquid 31.
SOLUTION: The wet treatment device is constituted of a field producing part constituted of an anode and a cathode, a mechanism keeping a distance between the field producing part 12 and the substrate 10, a device for making solvent near a filed producing means flow and a device for removing an organic matter in the solvent in advance. It peels and washes a resist formed in the surface of a base material 21 and a washing organic substance 22 at a high treatment speed, by supplying a solvent comprising radical active species of solvent origin produced by pure water by the field producing part as a treatment liquid 31 onto the substrate 10.
COPYRIGHT: (C)2005,JPO&NCIPI

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