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11. 发明申请

US20110142572A1 AUTO-SEQUENCING INLINE PROCESSING APPARATUS 有权
标题翻译：自动排序在线处理设备
公开(公告)号：US20110142572A1
公开(公告)日：2011-06-16
申请号：US12965791
申请日：2010-12-10
申请人： Wendell Thomas BLONIGAN , Masato Toshima , Kam S. Law , David Eric Berkstresser , Steve Kleinke , Craig Lyle Stevens
发明人： Wendell Thomas BLONIGAN , Masato Toshima , Kam S. Law , David Eric Berkstresser , Steve Kleinke , Craig Lyle Stevens
IPC分类号： H01L21/677 , H05B6/64
CPC分类号： H01L21/67745 , C23C16/45565 , G06T7/0004 , H01J37/32733 , H01L21/67173 , H01L21/67739 , H01L21/67748 , H01L21/67754 , Y10T29/49948
摘要： An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.
摘要翻译：一种并行处理多个基板的装置和方法。该系统采用一种新颖的架构，其在线性的情况下可以根据需要自主地对处理进行顺序处理和移动基板。系统同时移动多个基板; 然而，与现有技术不同，它不利用托盘。

12. 发明授权

US07029529B2 Method and apparatus for metallization of large area substrates 失效
标题翻译：用于大面积基板金属化的方法和装置
公开(公告)号：US07029529B2
公开(公告)日：2006-04-18
申请号：US10247403
申请日：2002-09-19
申请人： Kam S. Law , Robert Z. Bachrach , John M. White , Quanyuan Shang
发明人： Kam S. Law , Robert Z. Bachrach , John M. White , Quanyuan Shang
IPC分类号： B05C1/02 , B05C13/02
CPC分类号： C23C18/1632 , B05D1/002 , B05D7/142 , C23C18/1605 , C23C18/1608 , H01L21/288 , H01L21/76838 , H05K3/12 , H05K3/182
摘要： A system and method for processing large area substrates. In one embodiment, a system for processing large area substrates includes prep station, a stamping station and a stamp that is automatically moved between the stamping station and the prep station. The stamping station is adapted to retain a large area substrate thereon. The stamp has a patterned bottom surface that is adapted for microcontact printing. The prep station is for applying a precursor to the patterned bottom surface of the stamp. In one embodiment, a method for processing large area substrates includes the steps of disposing a large area substrate on a platen, inking a stamp adapted for microcontact printing, and automatically contacting a bottom of the stamp to the large area substrate supported on a platen.
摘要翻译：一种用于处理大面积基板的系统和方法。在一个实施例中，用于处理大面积基板的系统包括准备台，冲压站和在冲压站和准备站之间自动移动的印模。冲压站适于在其上保持大面积的基板。印模具有适于微接触印刷的图案底面。准备站用于将前体施加到印模的图案化底表面。在一个实施例中，一种用于处理大面积衬底的方法包括以下步骤：将大面积衬底设置在压板上，上墨适用于微接触印刷，以及自动地将印模底部接触到支撑在压板上的大面积衬底。

13. 发明授权

US06825134B2 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 有权
标题翻译：通过在连续气流中交替地脉冲前驱和高频功率沉积膜层
公开(公告)号：US06825134B2
公开(公告)日：2004-11-30
申请号：US10254627
申请日：2002-09-24
申请人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
发明人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
IPC分类号： H01L21471
CPC分类号： C23C16/45542 , C23C16/402 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3143 , H01L21/31612 , H01L21/31683 , H01L21/318 , H01L21/3185 , H01L21/32105 , H01L21/3211 , H01L29/66765
摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.
摘要翻译：描述了膜层沉积的方法。使用循环沉积工艺沉积膜层。循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

14. 发明授权

US06500356B2 Selectively etching silicon using fluorine without plasma 失效
标题翻译：使用无等离子体的氟选择性地蚀刻硅
公开(公告)号：US06500356B2
公开(公告)日：2002-12-31
申请号：US09535420
申请日：2000-03-27
申请人： Haruhiro Harry Goto , William R. Harshbarger , Kam S. Law
发明人： Haruhiro Harry Goto , William R. Harshbarger , Kam S. Law
IPC分类号： H01L2100
CPC分类号： H01L21/32135
摘要： A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F2) that is not excited to a plasma state.
摘要翻译：用于在不蚀刻氧化硅或氮化硅的情况下从工件选择性地蚀刻硅的工艺。主蚀刻剂气体是不被等离子体激发的分子氟气（F 2）。

15. 发明授权

US5843277A Dry-etch of indium and tin oxides with C2H5I gas 失效
标题翻译：用C2H5I气体干蚀刻铟和锡氧化物
公开(公告)号：US5843277A
公开(公告)日：1998-12-01
申请号：US577645
申请日：1995-12-22
申请人： Haruhiro Harry Goto , Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law
发明人： Haruhiro Harry Goto , Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law
IPC分类号： H05H1/46 , C23F4/00 , G02F1/1343 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L31/18 , H01L21/306
CPC分类号： H01L21/31122 , H01L31/1884 , G02F1/13439 , Y02E10/50
摘要： An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 100 .ANG./min and with a selectivity better than 20 to 1 is disclosed. Chamber pressure is maintained at least as low as 60 mTorr. A reactive gas that includes ethyl iodide C.sub.2 H.sub.5 I) is used alone or in combination with another gas such as O.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.
摘要翻译：公开了一种RIE方法和装置，用于以单一连续步骤以高于100安培/分钟的速率并且具有优于20比1的选择性蚀刻透明电极（ITO）的材料层。室压力至少保持在60mTorr以下。包括乙基碘C2H5I的反应性气体）单独使用或与另一种气体如O 2组合使用。监测反应产物和/或反应物的等离子体诱导的光发射，以确定有效蚀刻的时间点。

16. 发明授权

US5753133A Method and apparatus for etching film layers on large substrates 失效
标题翻译：用于在大基板上蚀刻薄膜层的方法和装置
公开(公告)号：US5753133A
公开(公告)日：1998-05-19
申请号：US273382
申请日：1994-07-11
申请人： Jerry Wong , Masato M. Toshima , Kam S. Law , Dan Maydan , Norman L. Turner
发明人： Jerry Wong , Masato M. Toshima , Kam S. Law , Dan Maydan , Norman L. Turner
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/67 , H01L21/683 , H01L21/687 , H05H1/00
CPC分类号： H01L21/68742 , H01L21/68778 , Y10S414/136 , Y10S414/139 , Y10S414/141
摘要： A chamber for processing substrates includes a support member therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces for receiving substrates thereon, and is rotatable about a horizontal axis to position the multiple planar faces in a horizontal position to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position for processing. A clamping and lifting apparatus is provided on the support member. The clamping and lifting apparatus is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting assembly and the support member, and in a retracted position to clamp the substrate to the support member. A clamp actuator is disposed on the chamber wall to move the clamping and lifting assembly between the extended and retracted positions.
摘要翻译：用于处理衬底的室包括其中从室的侧壁悬挂的支撑构件。支撑构件包括用于在其上接收衬底的多个平面，并且可围绕水平轴线旋转，以将多个平面位置定位在水平位置，以将衬底放置在平面上或从平面上移除衬底，并且第二位置以将基板放置在非水平位置进行处理。夹持和提升装置设置在支撑构件上。夹紧和提升装置相对于支撑构件可定位在延伸位置，以允许基板定位在夹紧和提升组件和支撑构件之间，并且在缩回位置将基板夹持到支撑构件。夹紧致动器设置在室壁上以使夹紧和提升组件在延伸位置和缩回位置之间移动。

17. 发明授权

US5567476A Multi-step chemical vapor deposition method for thin film transistors 失效
标题翻译：薄膜晶体管的多步骤化学气相沉积方法
公开(公告)号：US5567476A
公开(公告)日：1996-10-22
申请号：US427772
申请日：1995-04-25
申请人： Kam S. Law , Robert Robertson , Michael Kollrack , Angela T. Lee , Takako Takehara , Guofu J. Feng , Dan Maydan
发明人： Kam S. Law , Robert Robertson , Michael Kollrack , Angela T. Lee , Takako Takehara , Guofu J. Feng , Dan Maydan
IPC分类号： H01L21/205 , C23C16/24 , C23C16/34 , H01L21/31 , H01L21/318 , H01L21/336 , H01L29/786 , C23C16/00
CPC分类号： H01L29/66765 , C23C16/24 , C23C16/345
摘要： A multi-step CVD method for thin film transistor is disclosed. The method can be carried out by depositing a high quality g-SiN.sub.x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer. It also applies in a process where high quality amorphous silicon is first deposited at a low deposition rate on a gate nitride layer to form an interface, and then average quality amorphous silicon is deposited at a high deposition rate to complete the silicon layer. The unique process can be applied whenever an interface exists with an active semiconductor layer of amorphous silicon. The process is applicable to either the back channel etched TFT device or the etch stopped TFT device.
摘要翻译：公开了薄膜晶体管的多步CVD方法。该方法可以通过在以高沉积速率沉积的平均质量的氮化镓的顶部上以低沉积速率沉积高质量的g-SiNx，然后沉积非晶硅层来进行。它也适用于首先在栅极氮化物层上以低沉积速率沉积高品质非晶硅以形成界面的过程，然后以高沉积速率淀积平均质量的非晶硅以完成硅层。每当与非晶硅的有源半导体层存在界面时，可以应用独特的工艺。该工艺适用于后沟道蚀刻TFT器件或蚀刻停止的TFT器件。

18. 发明申请

US20110315081A1 SUSCEPTOR FOR PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：等离子体加工室的SUSCEPTOR
公开(公告)号：US20110315081A1
公开(公告)日：2011-12-29
申请号：US13149828
申请日：2011-05-31
申请人： Kam S. Law , Daisheng Mao , Robin K. F. Law , Michael Allen Renta
发明人： Kam S. Law , Daisheng Mao , Robin K. F. Law , Michael Allen Renta
IPC分类号： C23C16/511 , B05C13/00
CPC分类号： H01L21/68757 , C23C16/45565 , C23C16/4581 , C23C16/50
摘要： A susceptor for a plasma process apparatus, the susceptor having a graphite main body with a top surface for supporting at least one substrate, the top surface having a plasma sprayed aluminum oxide coating. A vacuum processing chamber, has a main chamber body, a showerhead provided at the ceiling of the chamber body, a pedestal provided inside the chamber body, and a susceptor coupled to the pedestal, the susceptor is made of a graphite main body having a top surface for supporting at least one substrate, the top surface having a dielectric coating such as, e.g., plasma sprayed aluminum oxide coating.
摘要翻译：一种用于等离子体处理装置的基座，所述基座具有石墨主体，所述石墨主体具有用于支撑至少一个基板的顶表面，所述顶表面具有等离子体喷涂的氧化铝涂层。真空处理室具有主室主体，设置在室主体顶部的喷头，设置在室主体内部的基座和与基座耦合的基座，基座由具有顶部的石墨主体用于支撑至少一个基板的表面，所述顶表面具有介电涂层，例如等离子喷涂的氧化铝涂层。

19. 发明授权

US06857387B1 Multiple frequency plasma chamber with grounding capacitor at cathode 失效
标题翻译：多频等离子体室，阴极接地电容
公开(公告)号：US06857387B1
公开(公告)日：2005-02-22
申请号：US09563963
申请日：2000-05-03
申请人： Sheng Sun , Jeff C. Olsen , Sanjay Yadav , Quanyuan Shang , Kam S. Law
发明人： Sheng Sun , Jeff C. Olsen , Sanjay Yadav , Quanyuan Shang , Kam S. Law
IPC分类号： H05H1/46 , B01J19/08 , C23C16/34 , C23C16/509 , C23C16/52 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/505 , C23F1/00 , H01L21/306
CPC分类号： C23C16/5096 , C23C16/345 , C23C16/52 , H01J37/32082 , H01J37/32165
摘要： An apparatus and method for fabricating an electronic workpiece in which first and second electrodes within a plasma chamber are respectively connected to low frequency and high frequency RF power supplies. At least one capacitor is connected between the first electrode and electrical ground. The one or more capacitors can reduce or eliminate the coupling of high frequency RF power to any plasma outside the region directly between the two electrodes. Consequently, the invention can improve the performance of the plasma process by concentrating more of the RF power in the region between the two electrodes.
摘要翻译：一种用于制造电子工件的装置和方法，其中等离子体室内的第一和第二电极分别连接到低频和高频RF电源。至少一个电容器连接在第一电极和电接地之间。一个或多个电容器可以减少或消除高频RF功率与直接在两个电极之间的区域外的任何等离子体的耦合。因此，本发明可以通过将更多的RF功率集中在两个电极之间的区域来提高等离子体处理的性能。

20. 发明授权

US06647993B2 Surface-treated shower head for use in a substrate processing chamber 失效
标题翻译：用于基板处理室的表面处理淋浴喷头
公开(公告)号：US06647993B2
公开(公告)日：2003-11-18
申请号：US09740596
申请日：2000-12-19
申请人： Quanyuan Shang , Sheng Sun , Kam S. Law , Emanuel Beer
发明人： Quanyuan Shang , Sheng Sun , Kam S. Law , Emanuel Beer
IPC分类号： B08B704
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/4405 , G03F7/70925 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J2237/3325 , H01J2237/334 , Y10S438/905
摘要： A substrate processing system includes a processing chamber and a plasma source located external to the chamber. A conduit connects the plasma source to an interior region of the chamber to provide a reactive species to the chamber interior for cleaning interior surfaces of the chamber. A shower head, disposed between the plasma source and an interior region of the chamber, can serve as an electrode and also can serve as a gas distribution mechanism. The shower head includes a surface treatment, such as a non-anodized aluminum outer layer, an electro-polished surface of bare aluminum, or a fluorine-based protective outer layer. The surface-treated shower head improves the rate of removal of materials deposited on the interior surfaces of the chamber during cleaning, reduces contamination of substrates during processing, and provides more efficient use of the power source used for heating the substrate during processing.
摘要翻译：衬底处理系统包括位于腔室外部的处理室和等离子体源。导管将等离子体源连接到腔室的内部区域，以向腔室内部提供反应物质以清洁腔室的内表面。设置在等离子体源和室的内部区域之间的喷头可以用作电极，并且还可以用作气体分配机构。淋浴头包括表面处理，例如非阳极氧化的铝外层，裸铝的电抛光表面或氟基保护外层。表面处理的花洒头在清洁过程中提高了沉积在室内表面上的材料的去除速度，减少了处理过程中衬底的污染，并且在加工过程中提供了用于加热衬底的电源的更有效的使用。

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