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1. 发明授权

US06647993B2 Surface-treated shower head for use in a substrate processing chamber 失效
标题翻译：用于基板处理室的表面处理淋浴喷头
公开(公告)号：US06647993B2
公开(公告)日：2003-11-18
申请号：US09740596
申请日：2000-12-19
申请人： Quanyuan Shang , Sheng Sun , Kam S. Law , Emanuel Beer
发明人： Quanyuan Shang , Sheng Sun , Kam S. Law , Emanuel Beer
IPC分类号： B08B704
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/4405 , G03F7/70925 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J2237/3325 , H01J2237/334 , Y10S438/905
摘要： A substrate processing system includes a processing chamber and a plasma source located external to the chamber. A conduit connects the plasma source to an interior region of the chamber to provide a reactive species to the chamber interior for cleaning interior surfaces of the chamber. A shower head, disposed between the plasma source and an interior region of the chamber, can serve as an electrode and also can serve as a gas distribution mechanism. The shower head includes a surface treatment, such as a non-anodized aluminum outer layer, an electro-polished surface of bare aluminum, or a fluorine-based protective outer layer. The surface-treated shower head improves the rate of removal of materials deposited on the interior surfaces of the chamber during cleaning, reduces contamination of substrates during processing, and provides more efficient use of the power source used for heating the substrate during processing.
摘要翻译：衬底处理系统包括位于腔室外部的处理室和等离子体源。导管将等离子体源连接到腔室的内部区域，以向腔室内部提供反应物质以清洁腔室的内表面。设置在等离子体源和室的内部区域之间的喷头可以用作电极，并且还可以用作气体分配机构。淋浴头包括表面处理，例如非阳极氧化的铝外层，裸铝的电抛光表面或氟基保护外层。表面处理的花洒头在清洁过程中提高了沉积在室内表面上的材料的去除速度，减少了处理过程中衬底的污染，并且在加工过程中提供了用于加热衬底的电源的更有效的使用。

2. 发明授权

US06182603B2 Surface-treated shower head for use in a substrate processing chamber 失效
公开(公告)号：US06182603B2
公开(公告)日：2001-02-06
申请号：US09115111
申请日：1998-07-13
申请人： Quanyuan Shang , Sheng Sun , Kam S. Law , Emanuel Beer
发明人： Quanyuan Shang , Sheng Sun , Kam S. Law , Emanuel Beer
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/4405 , G03F7/70925 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J2237/3325 , H01J2237/334 , Y10S438/905
摘要： A substrate processing system includes a processing chamber and a plasma source located external to the chamber. A conduit connects the plasma source to an interior region of the chamber to provide a reactive species to the chamber interior for cleaning interior surfaces of the chamber. A shower head, disposed between the plasma source and an interior region of the chamber, can serve as an electrode and also can serve as a gas distribution mechanism. The shower head includes a surface treatment, such as a non-anodized aluminum outer layer, an electro-polished surface of bare aluminum, or a fluorine-based protective outer layer. The surface-treated shower head improves the rate of removal of materials deposited on the interior surfaces of the chamber during cleaning, reduces contamination of substrates during processing, and provides more efficient use of the power source used for heating the substrate during processing.

3. 发明授权

US06857387B1 Multiple frequency plasma chamber with grounding capacitor at cathode 失效
标题翻译：多频等离子体室，阴极接地电容
公开(公告)号：US06857387B1
公开(公告)日：2005-02-22
申请号：US09563963
申请日：2000-05-03
申请人： Sheng Sun , Jeff C. Olsen , Sanjay Yadav , Quanyuan Shang , Kam S. Law
发明人： Sheng Sun , Jeff C. Olsen , Sanjay Yadav , Quanyuan Shang , Kam S. Law
IPC分类号： H05H1/46 , B01J19/08 , C23C16/34 , C23C16/509 , C23C16/52 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/505 , C23F1/00 , H01L21/306
CPC分类号： C23C16/5096 , C23C16/345 , C23C16/52 , H01J37/32082 , H01J37/32165
摘要： An apparatus and method for fabricating an electronic workpiece in which first and second electrodes within a plasma chamber are respectively connected to low frequency and high frequency RF power supplies. At least one capacitor is connected between the first electrode and electrical ground. The one or more capacitors can reduce or eliminate the coupling of high frequency RF power to any plasma outside the region directly between the two electrodes. Consequently, the invention can improve the performance of the plasma process by concentrating more of the RF power in the region between the two electrodes.
摘要翻译：一种用于制造电子工件的装置和方法，其中等离子体室内的第一和第二电极分别连接到低频和高频RF电源。至少一个电容器连接在第一电极和电接地之间。一个或多个电容器可以减少或消除高频RF功率与直接在两个电极之间的区域外的任何等离子体的耦合。因此，本发明可以通过将更多的RF功率集中在两个电极之间的区域来提高等离子体处理的性能。

4. 发明授权

US06172322B2 Annealing an amorphous film using microwave energy 失效
标题翻译：使用微波能量退火非晶膜
公开(公告)号：US06172322B2
公开(公告)日：2001-01-09
申请号：US08965939
申请日：1997-11-07
申请人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Takako Takehara , Taekyung Won , Sheng Sun
发明人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Takako Takehara , Taekyung Won , Sheng Sun
IPC分类号： H05B680
CPC分类号： C23C16/56
摘要： A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.
摘要翻译：一种用于对处理室中的基板上的膜进行退火的系统和方法，该处理室包括微波发生器，微波发生器被设置成向腔室内部的区域提供微波。微波的频率使得膜在频率上基本上是吸收性的，但是基底在频率上基本上不吸收。波导将微波分布在膜的表面上，以在膜的表面上提供基本上均匀的微波用量的微波。该方法包括在处理室中的衬底上沉积膜。在沉积步骤的至少一部分时间内，产生具有频率使得该膜在频率处具有吸收峰但基底在该频率处缺少实质吸收峰的频率的微波。微波指向电影。

5. 发明授权

US07029529B2 Method and apparatus for metallization of large area substrates 失效
标题翻译：用于大面积基板金属化的方法和装置
公开(公告)号：US07029529B2
公开(公告)日：2006-04-18
申请号：US10247403
申请日：2002-09-19
申请人： Kam S. Law , Robert Z. Bachrach , John M. White , Quanyuan Shang
发明人： Kam S. Law , Robert Z. Bachrach , John M. White , Quanyuan Shang
IPC分类号： B05C1/02 , B05C13/02
CPC分类号： C23C18/1632 , B05D1/002 , B05D7/142 , C23C18/1605 , C23C18/1608 , H01L21/288 , H01L21/76838 , H05K3/12 , H05K3/182
摘要： A system and method for processing large area substrates. In one embodiment, a system for processing large area substrates includes prep station, a stamping station and a stamp that is automatically moved between the stamping station and the prep station. The stamping station is adapted to retain a large area substrate thereon. The stamp has a patterned bottom surface that is adapted for microcontact printing. The prep station is for applying a precursor to the patterned bottom surface of the stamp. In one embodiment, a method for processing large area substrates includes the steps of disposing a large area substrate on a platen, inking a stamp adapted for microcontact printing, and automatically contacting a bottom of the stamp to the large area substrate supported on a platen.
摘要翻译：一种用于处理大面积基板的系统和方法。在一个实施例中，用于处理大面积基板的系统包括准备台，冲压站和在冲压站和准备站之间自动移动的印模。冲压站适于在其上保持大面积的基板。印模具有适于微接触印刷的图案底面。准备站用于将前体施加到印模的图案化底表面。在一个实施例中，一种用于处理大面积衬底的方法包括以下步骤：将大面积衬底设置在压板上，上墨适用于微接触印刷，以及自动地将印模底部接触到支撑在压板上的大面积衬底。

6. 发明授权

US06825134B2 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 有权
标题翻译：通过在连续气流中交替地脉冲前驱和高频功率沉积膜层
公开(公告)号：US06825134B2
公开(公告)日：2004-11-30
申请号：US10254627
申请日：2002-09-24
申请人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
发明人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
IPC分类号： H01L21471
CPC分类号： C23C16/45542 , C23C16/402 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3143 , H01L21/31612 , H01L21/31683 , H01L21/318 , H01L21/3185 , H01L21/32105 , H01L21/3211 , H01L29/66765
摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.
摘要翻译：描述了膜层沉积的方法。使用循环沉积工艺沉积膜层。循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

7. 发明授权

US06610354B2 Plasma display panel with a low k dielectric layer 失效
公开(公告)号：US06610354B2
公开(公告)日：2003-08-26
申请号：US09886174
申请日：2001-06-18
申请人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
发明人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
IPC分类号： C23C1640
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

8. 发明授权

US6055927A Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology 失效
公开(公告)号：US6055927A
公开(公告)日：2000-05-02
申请号：US782169
申请日：1997-01-14
申请人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Dan Maydan
发明人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Dan Maydan
IPC分类号： B08B7/00 , C23C16/42 , C23C16/44 , C23C16/52 , H01L21/205 , H01L21/3065 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4405
摘要： An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.

9. 发明授权

US5895548A High power microwave plasma applicator 失效
标题翻译：大功率微波等离子体涂布机
公开(公告)号：US5895548A
公开(公告)日：1999-04-20
申请号：US626258
申请日：1996-03-29
申请人： Gary C. Ettinger , Quanyuan Shang , Kam S. Law
发明人： Gary C. Ettinger , Quanyuan Shang , Kam S. Law
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , C23F1/02 , H01J7/24 , H05H1/24
CPC分类号： H01J37/32357
摘要： A plasma applicator including a cylindrically-shaped outer tube; a cylindrically-shaped plasma tube located within and concentric with the outer tube, and having a first end and a second end; a first support located at the first end of the plasma tube; a seal surrounding the plasma tube at its first end, compressed between the plasma tube and the first support, and located at a first distance from the first end of the plasma tube; and a shield extending a second distance into the plasma tube.
摘要翻译：一种等离子体施加器，其包括圆柱形外管; 位于所述外管内且与所述外管同心的圆柱形等离子体管，并且具有第一端和第二端; 位于等离子体管的第一端的第一支撑件; 围绕等离子体管的第一端处的密封件，其被压缩在等离子体管和第一支撑件之间，并且位于距离等离子体管的第一端的第一距离处; 以及将第二距离延伸到等离子体管中的屏蔽。

10. 发明授权

US06981508B2 On-site cleaning gas generation for process chamber cleaning 失效
公开(公告)号：US06981508B2
公开(公告)日：2006-01-03
申请号：US10856654
申请日：2004-05-27
申请人： Quanyuan Shang , Sanjay Yadav , William R. Harshbarger , Kam S. Law
发明人： Quanyuan Shang , Sanjay Yadav , William R. Harshbarger , Kam S. Law
IPC分类号： B08B9/093
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

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