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11. 发明授权

US07972198B2 Groove machining method by means of water jet, heat exchanger member, and heat exchanger 有权
标题翻译：通过喷水，换热器构件和热交换器进行槽加工
公开(公告)号：US07972198B2
公开(公告)日：2011-07-05
申请号：US11680985
申请日：2007-03-01
申请人： Koji Noishiki , Hiroyuki Ban
发明人： Koji Noishiki , Hiroyuki Ban
IPC分类号： B24B1/00
CPC分类号： B24C1/04 , Y10T29/4935 , Y10T29/49805 , Y10T29/4981
摘要： There is provided a groove machining method by means of water jet which machines grooves by means of a water jet device including injection nozzles for injecting a water jet on a face to be machined of a member to be machined, including a step of disposing protection members which are more resistive against an injection power of the water jet than the member to be machined so as to cover a portion which is a part of the face to be machined, and on which grooves are not to be formed in order to form ends of the machined grooves in a travel direction of the injection nozzles inside an outline of the face to be machined, and a step of moving the nozzles across the protection members and the face to be machined while injecting the water jet at a predetermined injection power from the injection nozzles.
摘要翻译：提供了一种通过水喷射的凹槽加工方法，该方法通过水喷射装置对水槽进行加工，该喷水装置包括用于将喷嘴喷射在待加工构件的被加工面上的喷嘴，包括设置保护构件其比待加工的构件更能抵抗水射流的喷射力，以覆盖作为被加工面的一部分的部分，并且在其上不形成槽以形成端部在被加工面的轮廓内的注射喷嘴的行进方向上的机械加工凹槽，以及将喷嘴横跨保护构件和待加工面喷射的步骤，同时以预定的喷射功率从喷嘴。

12. 发明申请

US20070234567A1 GROOVE MACHINING METHOD BY MEANS OF WATER JET, HEAT EXCHANGER MEMBER, AND HEAT EXCHANGER 有权
标题翻译：水喷射器，热交换器构件和热交换器的机械加工方法
公开(公告)号：US20070234567A1
公开(公告)日：2007-10-11
申请号：US11680985
申请日：2007-03-01
申请人： Koji Noishiki , Hiroyuki Ban
发明人： Koji Noishiki , Hiroyuki Ban
IPC分类号： B21D53/02 , B23P17/00
CPC分类号： B24C1/04 , Y10T29/4935 , Y10T29/49805 , Y10T29/4981
摘要： There is provided a groove machining method by means of water jet which machines grooves by means of a water jet device including injection nozzles for injecting a water jet on a face to be machined of a member to be machined, including a step of disposing protection members which are more resistive against an injection power of the water jet than the member to be machined so as to cover a portion which is a part of the face to be machined, and on which grooves are not to be formed in order to form ends of the machined grooves in a travel direction of the injection nozzles inside an outline of the face to be machined, and a step of moving the nozzles across the protection members and the face to be machined while injecting the water jet at a predetermined injection power from the injection nozzles.
摘要翻译：提供了一种通过水喷射的凹槽加工方法，该方法通过水喷射装置对水槽进行加工，该喷水装置包括用于将喷嘴喷射在待加工构件的被加工面上的喷嘴，包括设置保护构件其比待加工的构件更能抵抗水射流的喷射力，以覆盖作为被加工面的一部分的部分，并且在其上不形成槽以形成端部在被加工面的轮廓内的注射喷嘴的行进方向上的机械加工凹槽，以及将喷嘴横跨保护构件和待加工面喷射的步骤，同时以预定的喷射功率从喷嘴。

13. 发明授权

US07106031B2 Electric power supply apparatus having input switching circuit 有权
标题翻译：具有输入切换电路的电力供给装置
公开(公告)号：US07106031B2
公开(公告)日：2006-09-12
申请号：US11053919
申请日：2005-02-10
申请人： Junji Hayakawa , Hiroyuki Ban , Jyunichi Nagata
发明人： Junji Hayakawa , Hiroyuki Ban , Jyunichi Nagata
IPC分类号： G05F1/613 , G05F1/40
CPC分类号： H02M3/158 , H02M2001/0045 , H02M2001/0048 , H02M2001/007 , Y02B70/1491
摘要： In a power supply apparatus, a switching circuit selectively applies one of an input voltage of a power converting circuit and an output voltage of the power converting circuit to a voltage reducing power supply circuit. When the input voltage is applied to the power converting circuit, the switching circuit selects this input voltage, so that the output voltage of the voltage reducing power supply circuit can quickly rise. Thereafter, when the output voltage of the power converting circuit exceeds this output voltage, the switching circuit selects the output voltage of the power converting circuit. As a result, a difference between the input voltage and the output voltage of the voltage reducing power supply circuit is decreased. Thus, a power loss is lowered and noise produced in the power converting circuit is suppressed.
摘要翻译：在电源装置中，开关电路将功率转换电路的输入电压和电力转换电路的输出电压中的一个选择性地施加到降压电源电路。当输入电压施加到功率转换电路时，开关电路选择该输入电压，使得降压电源电路的输出电压可以快速上升。此后，当电力转换电路的输出电压超过该输出电压时，开关电路选择电力转换电路的输出电压。结果，降压电源电路的输入电压和输出电压之间的差减小。因此，功率损耗降低，功率转换电路产生的噪声被抑制。

14. 发明授权

US06982496B2 Semiconductor device having bump electrode and support area 失效
标题翻译：具有凸起电极和支撑区域的半导体器件
公开(公告)号：US06982496B2
公开(公告)日：2006-01-03
申请号：US10425664
申请日：2003-04-30
申请人： Hirofumi Abe , Hiroyuki Ban
发明人： Hirofumi Abe , Hiroyuki Ban
IPC分类号： H01L29/06 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/544
CPC分类号： H01L23/562 , H01L24/10 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05569 , H01L2224/05571 , H01L2224/14 , H01L2924/01078
摘要： A semiconductor device includes a substrate, a plurality of bump electrodes disposed on the substrate, and a support area for supporting the substrate in case of carrying the substrate. The support area is disposed on a surface of the substrate, on which the bump electrode is disposed, and is disposed at a predetermined position, which is dotted on the surface of the substrate. In this device, the support area is sufficiently small, and the number of the bump electrodes can increase. Moreover, degree of freedom in a configuration of the support area increases.
摘要翻译：半导体器件包括衬底，设置在衬底上的多个凸块电极，以及用于在承载衬底的情况下支撑衬底的支撑区域。支撑区域设置在其上设置有凸起电极的基板的表面上，并且被布置在点状在基板的表面上的预定位置处。在该装置中，支撑区域足够小，并且凸起电极的数量可以增加。此外，支撑区域的配置的自由度增加。

15. 发明授权

US06972973B2 Voltage booster having noise reducing structure 失效
标题翻译：具有降噪结构的电压升压器
公开(公告)号：US06972973B2
公开(公告)日：2005-12-06
申请号：US10716560
申请日：2003-11-20
申请人： Hirofumi Abe , Hirokazu Itakura , Hiroyuki Ban , Shoichi Okuda , Kingo Ota
发明人： Hirofumi Abe , Hirokazu Itakura , Hiroyuki Ban , Shoichi Okuda , Kingo Ota
IPC分类号： H02M3/07 , H02M3/18 , G05F3/08
CPC分类号： H02M3/18 , H02M3/073
摘要： In a voltage booster, a voltage detection circuit detects a battery voltage as an input voltage. If the input voltage is lower than a threshold level, an oscillation circuit outputs a gate signal having a relatively high frequency to increase the driving performance of a driving circuit. If the input voltage is higher than the threshold level, the frequency of the gate signal is lowered so as to prevent the driving performance of the driving circuit from rising to an excessively high value. As a result, a predetermined boosted voltage can be obtained regardless of variations in input voltage without using a filter for eliminating noise.
摘要翻译：在升压器中，电压检测电路检测电池电压作为输入电压。如果输入电压低于阈值电平，则振荡电路输出具有较高频率的门信号，以提高驱动电路的驱动性能。如果输入电压高于阈值电平，则门信号的频率降低，以防止驱动电路的驱动性能上升到过高的值。结果，无需使用用于消除噪声的滤波器，就可以获得预定的升压电压而不管输入电压的变化。

16. 发明授权

US06831331B2 Power MOS transistor for absorbing surge current 失效
标题翻译：功率MOS晶体管，用于吸收浪涌电流
公开(公告)号：US06831331B2
公开(公告)日：2004-12-14
申请号：US09945621
申请日：2001-09-05
申请人： Yasuhiro Kitamura , Toshio Sakakibara , Kenji Kohno , Shoji Mizuno , Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yasuhiro Kitamura , Toshio Sakakibara , Kenji Kohno , Shoji Mizuno , Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/1087 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device is provided having a power transistor structure. The power transistor structure includes a plurality of first wells disposed independently at a surface portion of a semiconductor layer; a deep region having a portion disposed in the semiconductor layer between the first wells; a drain electrode connected to respective drain regions in the first wells; a source electrode connected to respective source regions and channel well regions in the first wells, such that either the drain electrode or the source electrode is connected to an inductive load; and a connecting member for supplying the deep region with a source potential, where the connecting member is configurable to connect to the drain electrode when the drain electrode is connected to the inductive load and to connect to the source electrode when the source electrode is connected to said inductive load.
摘要翻译：提供具有功率晶体管结构的半导体器件。功率晶体管结构包括独立地设置在半导体层的表面部分处的多个第一阱; 深部区域，其具有设置在所述第一阱之间的所述半导体层中的部分; 漏电极，连接到所述第一阱中的相应的漏极区; 源电极，其连接到第一阱中的各个源极区域和沟道阱区域，使得漏极电极或源极电极连接到感性负载; 以及连接构件，用于向深区域提供源极电位，其中当漏电极连接到感性负载时，连接构件可配置为连接到漏电极，并且当源电极连接到源电极时连接到源电极表示感性负载。

17. 发明授权

US06287933B1 Semiconductor device having thin film resistor and method of producing same 失效
标题翻译：具有薄膜电阻器的半导体器件及其制造方法
公开(公告)号：US06287933B1
公开(公告)日：2001-09-11
申请号：US08015268
申请日：1992-01-03
申请人： Makio Iida , Shoji Miura , Kanemitsu Terada , Hiroyuki Ban , Kiyoshi Yamamoto , Katsuyoshi Oda , Yoshihiko Isobe
发明人： Makio Iida , Shoji Miura , Kanemitsu Terada , Hiroyuki Ban , Kiyoshi Yamamoto , Katsuyoshi Oda , Yoshihiko Isobe
IPC分类号： H01L2120
CPC分类号： H01L28/24
摘要： A semiconductor device having a thin film resistor which comprises at least chromium, silicon and nitrogen, and formed on a substrate with having a special ratio of the chemical composition, the semiconductor device having a characteristic such that variations of the resistance value thereof due to temperature variations can be effectively suppressed.
摘要翻译：一种具有薄膜电阻器的半导体器件，该薄膜电阻器至少包含铬，硅和氮，并且形成在具有特定比例的化学成分的基板上，该半导体器件具有使其由于温度导致的电阻值的变化的特性可以有效地抑制变化。

18. 发明授权

US6104078A Design for a semiconductor device having elements isolated by insulating regions 失效
标题翻译：设计具有通过绝缘区隔离的元件的半导体器件
公开(公告)号：US6104078A
公开(公告)日：2000-08-15
申请号：US941756
申请日：1997-09-30
申请人： Makio Iida , Mitsuhiro Saitou , Akitaka Murata , Hiroyuki Ban , Tadashi Suzuki , Toshio Sakakibara , Takayuki Sugisaka , Shoji Miura
发明人： Makio Iida , Mitsuhiro Saitou , Akitaka Murata , Hiroyuki Ban , Tadashi Suzuki , Toshio Sakakibara , Takayuki Sugisaka , Shoji Miura
IPC分类号： H01L21/762 , H01L29/36
CPC分类号： H01L21/76264
摘要： A semiconductor device including a semiconductor substrate having a main surface. An insulating film is formed on the main surface of the semiconductor substrate. A semiconductor layer is placed on the insulating film. Side insulating regions extending from a surface of the semiconductor layer to the insulating film divide the semiconductor layer into element regions. The element regions are isolated from each other by the side insulating regions and the insulating film. The semiconductor substrate has a resistivity of 1.5 .OMEGA.cm or lower. A voltage at the semiconductor substrate is set to a given voltage.
摘要翻译：一种半导体器件，包括具有主表面的半导体衬底。绝缘膜形成在半导体衬底的主表面上。半导体层被放置在绝缘膜上。从半导体层的表面延伸到绝缘膜的侧绝缘区域将半导体层分成元件区域。元件区域通过侧绝缘区域和绝缘膜彼此隔离。半导体基板的电阻率为1.5欧姆·厘米或更低。将半导体衬底处的电压设定为给定电压。

19. 发明授权

US06034556A Sample-and-hold circuit including operational amplifier as an input circuit 失效
标题翻译：采样保持电路包括运算放大器作为输入电路
公开(公告)号：US06034556A
公开(公告)日：2000-03-07
申请号：US19363
申请日：1998-02-05
申请人： Takahisa Koyasu , Mitsuhiro Saitou , Hiroyuki Ban
发明人： Takahisa Koyasu , Mitsuhiro Saitou , Hiroyuki Ban
IPC分类号： G11C27/02 , H03F3/30 , H03F3/45
CPC分类号： H03F3/3071 , G11C27/026 , H03F3/45085 , H03F2203/45594 , H03F2203/45612 , H03F2203/45618 , H03F2203/45674 , H03F2203/45722
摘要： An operational amplifier charges a charge storage capacitor in response to an input signal supplied to a non-inverting input terminal. When a switching signal is low, NPN transistors disposed in an output open circuit are on. Therefore, output transistors disposed in a push-pull circuit are off and the output signal is cut off. Further, in this situation, the potential of a phase compensation capacitor is held because AC coupling of the phase compensation capacitor does not occur.
摘要翻译：响应于提供给非反相输入端的输入信号，运算放大器对电荷存储电容器充电。当开关信号为低电平时，设置在输出开路中的NPN晶体管导通。因此，设置在推挽电路中的输出晶体管截止，输出信号被切断。此外，在这种情况下，由于不发生相位补偿电容器的AC耦合，因此保持相位补偿电容器的电位。

20. 发明授权

US5918982A Temperature detecting using a forward voltage drop across a diode 失效
标题翻译：使用二极管两端的正向压降进行温度检测
公开(公告)号：US5918982A
公开(公告)日：1999-07-06
申请号：US927182
申请日：1997-09-11
申请人： Junichi Nagata , Junji Hayakawa , Hiroyuki Ban
发明人： Junichi Nagata , Junji Hayakawa , Hiroyuki Ban
IPC分类号： G01K7/01 , G01R19/165 , G05F3/02 , H02H5/04 , H02H7/20 , G01K7/00
CPC分类号： G01K7/01
摘要： A temperature detecting circuit detects the rise of ambient temperature, using a forward voltage drop across a diode. The temperature detecting circuit comprises a temperature detecting diode whose cathode is grounded, a first constant current supply device connected with the anode of the temperature detecting diode, for supplying a constant current Ia to the temperature-detecting diode, a rectifying diode whose cathode is connected with the anode of the temperature detecting diode, a second constant current supply device connected with the anode of the rectifying diode, for supplying a constant current Ib to the temperature-detecting diode, a comparator, and a transistor. When the voltage at the anode of the temperature-detecting diode is lower than a reference voltage, the comparator produces a high-level signal indicative of overheating. In response to this, the transistor shorts the anode of the rectifying diode to ground potential to supply the constant current Ib from the second constant current supply device directly to ground potential.
摘要翻译：温度检测电路使用二极管两端的正向压降来检测环境温度的上升。温度检测电路包括阴极接地的温度检测二极管，与温度检测二极管的阳极连接的第一恒流源装置，用于向温度检测二极管提供恒定电流Ia;其阴极连接的整流二极管与温度检测二极管的阳极连接的第二恒流源装置与整流二极管的阳极连接，用于向温度检测二极管提供恒定电流Ib，比较器和晶体管。当温度检测二极管的阳极电压低于参考电压时，比较器产生指示过热的高电平信号。响应于此，晶体管将整流二极管的阳极短路到地电位，以将恒定电流Ib从第二恒定电流供应装置直接提供给地电位。

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