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1. 发明授权

US06831331B2 Power MOS transistor for absorbing surge current 失效
标题翻译：功率MOS晶体管，用于吸收浪涌电流
公开(公告)号：US06831331B2
公开(公告)日：2004-12-14
申请号：US09945621
申请日：2001-09-05
申请人： Yasuhiro Kitamura , Toshio Sakakibara , Kenji Kohno , Shoji Mizuno , Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yasuhiro Kitamura , Toshio Sakakibara , Kenji Kohno , Shoji Mizuno , Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/1087 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device is provided having a power transistor structure. The power transistor structure includes a plurality of first wells disposed independently at a surface portion of a semiconductor layer; a deep region having a portion disposed in the semiconductor layer between the first wells; a drain electrode connected to respective drain regions in the first wells; a source electrode connected to respective source regions and channel well regions in the first wells, such that either the drain electrode or the source electrode is connected to an inductive load; and a connecting member for supplying the deep region with a source potential, where the connecting member is configurable to connect to the drain electrode when the drain electrode is connected to the inductive load and to connect to the source electrode when the source electrode is connected to said inductive load.
摘要翻译：提供具有功率晶体管结构的半导体器件。功率晶体管结构包括独立地设置在半导体层的表面部分处的多个第一阱; 深部区域，其具有设置在所述第一阱之间的所述半导体层中的部分; 漏电极，连接到所述第一阱中的相应的漏极区; 源电极，其连接到第一阱中的各个源极区域和沟道阱区域，使得漏极电极或源极电极连接到感性负载; 以及连接构件，用于向深区域提供源极电位，其中当漏电极连接到感性负载时，连接构件可配置为连接到漏电极，并且当源电极连接到源电极时连接到源电极表示感性负载。

2. 发明授权

US6104076A Semiconductor device and manufacturing method thereof 失效
公开(公告)号：US6104076A
公开(公告)日：2000-08-15
申请号：US748896
申请日：1996-11-15
申请人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L21/336 , H01L21/8249 , H01L27/02 , H01L27/06 , H01L27/085 , H01L29/739 , H01L29/78 , H01L29/76 , H01L23/58
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/063 , H01L29/1083 , H01L29/1095 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.

3. 发明授权

US06242787B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06242787B1
公开(公告)日：2001-06-05
申请号：US08748896
申请日：1996-11-15
申请人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/063 , H01L29/1083 , H01L29/1095 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.
摘要翻译：一种包括减小表面场强度型LDMOS晶体管的半导体器件，其可以防止当向其漏极施加反向电压时在沟道形成部分处的元件的击穿。在N型衬底中形成P阱和N阱以产生双阱结构，其中源极被设置为与N型衬底的电位相等。 N阱的漂移区域具有掺杂浓度以满足所谓的RESURF条件，其可以提供高的击穿电压低导通电阻。当向漏极施加反向电压时，包括N阱，P阱和N型衬底的寄生双极晶体管形成朝向衬底的通电路径，使得元件在沟道形成时击穿在施加反向电压时部分是可避免的。

4. 发明授权

US5672894A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5672894A
公开(公告)日：1997-09-30
申请号：US543864
申请日：1995-10-19
申请人： Hiroshi Maeda , Susumu Ueda , Hiroshi Fujimoto , Yoshiaki Nakayama
发明人： Hiroshi Maeda , Susumu Ueda , Hiroshi Fujimoto , Yoshiaki Nakayama
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/482 , H01L23/52 , H01L23/522 , H01L29/417 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7816 , H01L23/4824 , H01L29/41758 , H01L2924/0002
摘要： The resistance to electromigration in a double-layer Al wiring structure of lateral DMOS or the like is improved by further reducing ON resistance and mitigating current concentration. The first-layer source wiring and the first-layer drain wiring which are electrically connected to a plurality of source cells and drain cells respectively are formed into a pectinate pattern respectively. The second-layer source wiring and the second-layer drain wiring are also formed into a pectinate pattern respectively and disposed in inclination at 45 degrees to the patterns of the first-layer source wiring and first-layer drain wiring. At the intersections of the first-layer source wiring and the second-layer source wiring, at the intersections of the first-layer drain wiring and the second-layer drain wiring, at the outer circumferential portions of the pectinate patterns of first-layer source and drain wirings and at the source and drain pads, contact holes are provided on a layer insulation film to make a contact between the first-layer source and drain wirings and the second-layer source and drain wirings, respectively.
摘要翻译：通过进一步降低导通电阻和减轻电流浓度，提高了横向DMOS等的双层Al布线结构中的电迁移阻力。分别与多个源电池和漏电池电连接的第一层源极布线和第一层漏极布线分别形成果胶图案。第二层源极布线和第二层漏极布线也分别形成为果胶图案，并且以与第一层源极布线和第一层漏极布线的图案成45度的倾斜度设置。在第一层源极布线和第二层源极布线的交点处，在第一层漏极布线和第二层漏极布线的交点处，在第一层源极布线的第二层源极布线和漏极布线，并且在源极和漏极焊盘处，接触孔设置在层间绝缘膜上，以分别在第一层源极和漏极布线与第二层源极和漏极布线之间接触。

5. 发明授权

US09666316B2 Nuclear power plant control system and method of testing nuclear power plant 有权
公开(公告)号：US09666316B2
公开(公告)日：2017-05-30
申请号：US13825256
申请日：2011-09-21
申请人： Hiroshi Fujimoto , Hironobu Shinohara , Yasutake Akizuki , Toshiki Fukui , Yuichi Tanaka , Shinji Kiuchi , Hiroshi Shirasawa
发明人： Hiroshi Fujimoto , Hironobu Shinohara , Yasutake Akizuki , Toshiki Fukui , Yuichi Tanaka , Shinji Kiuchi , Hiroshi Shirasawa
IPC分类号： G21D3/08 , G21D3/00 , G21C17/00
CPC分类号： G21D3/00 , G21C17/00 , G21D3/001 , G21D3/008 , Y02E30/40
摘要： A nuclear power plant control system (1) includes a control button (21) which receives an operation for controlling a control target device (40), a notification lamp (12) which notifies that a control signal corresponding to the operation received by the control button (21) arrives at a predetermined position on a path connected from a control panel (20) to the control target device (40), and a control signal inhibition unit (33) which inhibits a control signal from arriving at the control target device (40) in midstream between the predetermined position on the path and the control target device (40) in response to an operation received by a test permission button (11).

6. 发明申请

US20140028992A1 DRIVING SYSTEM AND DRIVING METHOD, EXPOSURE APPARATUS AND EXPOSURE METHOD, AND DRIVING SYSTEM DESIGN METHOD 有权
标题翻译：驱动系统和驱动方法，曝光装置和曝光方法以及驱动系统设计方法
公开(公告)号：US20140028992A1
公开(公告)日：2014-01-30
申请号：US13981733
申请日：2012-01-27
申请人： Hiroshi Fujimoto , Kazuaki Saiki , Koichi Sakata
发明人： Hiroshi Fujimoto , Kazuaki Saiki , Koichi Sakata
IPC分类号： G03F7/20
CPC分类号： G03F7/70775 , G03F7/70725 , G03F7/70758
摘要： At a carriage that shows a resonance mode in opposite phase to a resonance mode shown by a plate table where an interferometer which measures a position (a first controlled variable) of a plate stage driven according to a control input is installed, another interferometer is installed which measures a position (the second controlled variable) of the plate stage. By using the interferometer and the another interferometer, it becomes possible to design a driving system robust in a high bandwidth that drives the plate stage.
摘要翻译：在显示与由平板表所示的谐振模式相反的谐振模式的托架上，其中安装了根据控制输入驱动的板级位置（第一受控变量）的干涉仪，另一干涉仪被安装其测量平台的位置（第二受控变量）。通过使用干涉仪和另一干涉仪，可以设计在驱动平板台的高带宽中坚固的驱动系统。

7. 发明授权

US08487983B2 Viewing area adjusting device, video processing device, and viewing area adjusting method based on number of viewers 失效
标题翻译：观看区域调整装置，视频处理装置和基于观众数量的观看区域调整方法
公开(公告)号：US08487983B2
公开(公告)日：2013-07-16
申请号：US13404803
申请日：2012-02-24
申请人： Tatsuhiro Nishioka , Nobuyuki Ikeda , Hiroshi Fujimoto , Toshihiro Morohoshi
发明人： Tatsuhiro Nishioka , Nobuyuki Ikeda , Hiroshi Fujimoto , Toshihiro Morohoshi
IPC分类号： H04N13/00
CPC分类号： H04N13/128 , G02B27/0093 , G02B27/2214 , H04N13/302 , H04N13/368 , H04N13/373 , H04N13/376
摘要： A viewing area adjusting device has an image pickup unit capable of shooting a forward direction of a stereoscopic video display device capable of displaying a stereoscopic video, a viewer information detector configured to detect the number of viewers and positions of the viewers by a video shot by the image pickup unit, a viewing area adjustment policy determining unit configured to select any one of a plurality of viewing area adjustment policies based on the number of viewers detected by the viewer information detector, a viewing area information computing unit configured to compute an adjustment amount for the viewing area, and a viewing area adjusting unit configured to adjust the viewing area.
摘要翻译：观看区域调整装置具有能够拍摄能够显示立体视觉的立体视频显示装置的向前方向的摄像单元，被配置为通过视频拍摄来检测观看者的数量和观看者的位置的观众信息检测器图像拾取单元，视觉区域调整策略确定单元，被配置为基于由观看者信息检测器检测到的观看者的数量来选择多个观看区域调整策略中的任一个;观看区域信息计算单元，被配置为计算调整量和用于调整观看区域的观看区域调整单元。

8. 发明申请

US20130050441A1 VIDEO PROCESSING APPARATUS AND VIDEO PROCESSING METHOD 审中-公开
标题翻译：视频处理设备和视频处理方法
公开(公告)号：US20130050441A1
公开(公告)日：2013-02-28
申请号：US13403702
申请日：2012-02-23
申请人： Takashi Kumagai , Nobuyuki Ikeda , Hiroshi Fujimoto , Toshihiro Morohoshi
发明人： Takashi Kumagai , Nobuyuki Ikeda , Hiroshi Fujimoto , Toshihiro Morohoshi
IPC分类号： H04N13/04
CPC分类号： H04N13/359 , G09G3/3611 , G09G2320/028 , H04N13/302 , H04N13/366
摘要： According to one embodiment, a video processing apparatus includes a viewer position detector, a viewing area information calculator, a keeping module, and a viewing area controller. The viewer position detector is configured to detect a position of a viewer using an image taken by a camera during displaying a two dimensional image. The viewing area information calculator is configured to calculate a control parameter so as to set a viewing area, in which a plurality of parallax images displayed on a display are viewed as a stereoscopic image, at an area depending on the position of the viewer. The keeping module is configured to keep the control parameter calculated. The viewing area controller is configured to set the viewing area according to the control parameter kept by the keeping module in synchronization with a change from displaying the two dimensional image to displaying a stereoscopic image.
摘要翻译：根据一个实施例，视频处理设备包括观看者位置检测器，观看区域信息计算器，保持模块和观看区域控制器。观看者位置检测器被配置为在显示二维图像期间使用由相机拍摄的图像来检测观看者的位置。观看区域信息计算器被配置为计算控制参数，以便在根据观看者的位置的区域处将显示在显示器上的多个视差图像视为立体图像的观看区域设置。保持模块配置为保持控制参数的计算。观看区域控制器被配置为根据由保持模块保持的控制参数与从显示二维图像到显示立体图像的改变同步地设置观看区域。

9. 发明申请

US20120181263A1 CORDLESS IRON 有权
标题翻译：无铁芯
公开(公告)号：US20120181263A1
公开(公告)日：2012-07-19
申请号：US13499578
申请日：2010-10-22
申请人： Hiroshi Fujimoto , Kiichi Shimosaka , Yasuharu Otsuka
发明人： Hiroshi Fujimoto , Kiichi Shimosaka , Yasuharu Otsuka
IPC分类号： D06F75/40
CPC分类号： D06F75/38 , D06F75/18 , D06F75/30 , D06F75/34 , D06F75/36 , D06F79/026
摘要： An iron body includes a concave power receiving portion at the rear portion of a grip and power receiving terminals in the power receiving portion. Stand 16 includes seat 17 where iron body is placed with the front inclined upward, convex power supply portion 18 at the rear portion of seat 17, and electrodes in power supply portion 18. A support portion protruding vertically rearward is formed in the power receiving portion, slit 23 where the support portion is fitted is formed on the top of power supply portion 18, guide portion 18a inclining toward slit 23 and guiding the support portion is formed at the front of power supply portion 18, and bulged portion 18b protruding in an arc shape toward power receiving portion and guiding the power receiving portion is formed at the lower portion of the front of power supply portion 18. When iron body is placed on stand 16, the power receiving portion is guided to a correct position of power supply portion 18 by guide portion 18a and bulged portion 18b, such that the power receiving terminals and the electrodes are reliably electrically connected.
摘要翻译：铁体包括位于握持部的后部的凹入的受电部和受电部的受电端子。支架16包括座体17，铁体放置在座17的后部具有前倾斜的向上凸起的供电部分18，以及电源部分18中的电极。垂直向后突出的支撑部分形成在电力接收部分在供电部分18的顶部形成有狭缝23，其中，支撑部分形成在供电部分18的顶部，向着狭缝23倾斜的引导部分18a，并且在电源部分18的前部形成引导支撑部分，在供电部18的前部的下部形成朝向电力接收部分的电弧形状并引导电力接收部分。当铁体放置在支架16上时，电力接收部分被引导到电源部分的正确位置 18由引导部分18a和凸起部分18b，使得电力接收端子和电极可靠地电连接。

10. 发明授权

US08011006B2 Access controller and access control method 有权
标题翻译：访问控制器和访问控制方法
公开(公告)号：US08011006B2
公开(公告)日：2011-08-30
申请号：US11372084
申请日：2006-03-10
申请人： Takashi Suzuki , Akira Kinno , Hiroshi Fujimoto , Takehiro Nakayama
发明人： Takashi Suzuki , Akira Kinno , Hiroshi Fujimoto , Takehiro Nakayama
IPC分类号： G06F21/00 , G06F21/02 , G06F12/00 , G06F12/14
CPC分类号： G06F21/53 , G06F21/6218
摘要： An access controller controls access to control target resources by a program. The access controller includes a function access detection unit and a resource access control unit. The function access detection unit detects loading of a control target function from the program and generates identification information to specify an access request issued from the detected control target function. The resource access control unit obtains a request of accessing the control target resources from the program and determines permission of the access request based on the identification information.
摘要翻译：访问控制器通过程序控制对目标资源的访问。访问控制器包括功能访问检测单元和资源访问控制单元。功能访问检测单元从程序检测控制目标功能的加载，并且生成识别信息以指定从检测到的控制目标功能发出的访问请求。资源访问控制单元从程序获取访问控制目标资源的请求，并且基于识别信息确定访问请求的许可。

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