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1. 发明授权

US06972973B2 Voltage booster having noise reducing structure 失效
标题翻译：具有降噪结构的电压升压器
公开(公告)号：US06972973B2
公开(公告)日：2005-12-06
申请号：US10716560
申请日：2003-11-20
申请人： Hirofumi Abe , Hirokazu Itakura , Hiroyuki Ban , Shoichi Okuda , Kingo Ota
发明人： Hirofumi Abe , Hirokazu Itakura , Hiroyuki Ban , Shoichi Okuda , Kingo Ota
IPC分类号： H02M3/07 , H02M3/18 , G05F3/08
CPC分类号： H02M3/18 , H02M3/073
摘要： In a voltage booster, a voltage detection circuit detects a battery voltage as an input voltage. If the input voltage is lower than a threshold level, an oscillation circuit outputs a gate signal having a relatively high frequency to increase the driving performance of a driving circuit. If the input voltage is higher than the threshold level, the frequency of the gate signal is lowered so as to prevent the driving performance of the driving circuit from rising to an excessively high value. As a result, a predetermined boosted voltage can be obtained regardless of variations in input voltage without using a filter for eliminating noise.
摘要翻译：在升压器中，电压检测电路检测电池电压作为输入电压。如果输入电压低于阈值电平，则振荡电路输出具有较高频率的门信号，以提高驱动电路的驱动性能。如果输入电压高于阈值电平，则门信号的频率降低，以防止驱动电路的驱动性能上升到过高的值。结果，无需使用用于消除噪声的滤波器，就可以获得预定的升压电压而不管输入电压的变化。

2. 发明申请

US20060087348A1 Semiconductor device for driving a load 失效
标题翻译：用于驱动负载的半导体装置
公开(公告)号：US20060087348A1
公开(公告)日：2006-04-27
申请号：US11220529
申请日：2005-09-08
申请人： Kingo Ota , Shoichi Okuda , Hirofumi Abe
发明人： Kingo Ota , Shoichi Okuda , Hirofumi Abe
IPC分类号： H03B1/00
CPC分类号： H03K17/04206 , H03K17/0822
摘要： A semiconductor device for driving a load includes a first semiconductor switching element interposed between a power supply terminal and a load, a second semiconductor switching element interposed between the load and a ground terminal, a high-side driver, a low-side driver, and a voltage regulator. The voltage regulator reduces a voltage applied to a control terminal of the second switching element, when a voltage of a load terminal of the second switching element is lower than a predetermined voltage. Then, a voltage applied between the load terminal and the ground terminal of the second switching element increases, and accordingly a voltage applied between the power supply terminal and the load terminal of the first switching element decreases.
摘要翻译：用于驱动负载的半导体装置包括插入在电源端子和负载之间的第一半导体开关元件，插入在负载和接地端子之间的第二半导体开关元件，高侧驱动器，低侧驱动器和电压调节器。当第二开关元件的负载端子的电压低于预定电压时，电压调节器减小施加到第二开关元件的控制端子的电压。然后，施加在第二开关元件的负载端子和接地端子之间的电压增加，因此施加在第一开关元件的电源端子和负载端子之间的电压降低。

3. 发明授权

US07268596B2 Semiconductor device for driving a load 失效
标题翻译：用于驱动负载的半导体装置
公开(公告)号：US07268596B2
公开(公告)日：2007-09-11
申请号：US11220529
申请日：2005-09-08
申请人： Kingo Ota , Shoichi Okuda , Hirofumi Abe
发明人： Kingo Ota , Shoichi Okuda , Hirofumi Abe
IPC分类号： H03B1/00
CPC分类号： H03K17/04206 , H03K17/0822
摘要： A semiconductor device for driving a load includes a first semiconductor switching element interposed between a power supply terminal and a load, a second semiconductor switching element interposed between the load and a ground terminal, a high-side driver, a low-side driver, and a voltage regulator. The voltage regulator reduces a voltage applied to a control terminal of the second switching element, when a voltage of a load terminal of the second switching element is lower than a predetermined voltage. Then, a voltage applied between the load terminal and the ground terminal of the second switching element increases, and accordingly a voltage applied between the power supply terminal and the load terminal of the first switching element decreases.
摘要翻译：用于驱动负载的半导体装置包括插入在电源端子和负载之间的第一半导体开关元件，插入在负载和接地端子之间的第二半导体开关元件，高侧驱动器，低侧驱动器和电压调节器。当第二开关元件的负载端子的电压低于预定电压时，电压调节器减小施加到第二开关元件的控制端子的电压。然后，施加在第二开关元件的负载端子和接地端子之间的电压增加，因此施加在第一开关元件的电源端子和负载端子之间的电压降低。

4. 发明申请

US20060267147A1 Semiconductor device having current mirror circuit 审中-公开
标题翻译：具有电流镜电路的半导体器件
公开(公告)号：US20060267147A1
公开(公告)日：2006-11-30
申请号：US11442399
申请日：2006-05-30
申请人： Kingo Ota , Shoichi Okuda
发明人： Kingo Ota , Shoichi Okuda
IPC分类号： H01L27/082
CPC分类号： H01L27/0211
摘要： A semiconductor device includes a semiconductor substrate and a current mirror circuit that has an input transistor group of input transistors and an output transistor group of output transistors. The input transistor group and the output transistor group are arranged on the semiconductor substrate in such a manner that at least one of the input transistors and at least one of the output transistors are grouped together to form a transistor set. Each transistor set is arranged in a repeating pattern. In each transistor set, the transistors have the same temperature and show the same temperature dependence, even when a temperature gradient occurs inside the semiconductor device. Thus, a mirror ratio of the current mirror circuit can be accurately obtained.
摘要翻译：半导体器件包括半导体衬底和具有输入晶体管的输入晶体管组和输出晶体管的输出晶体管组的电流镜电路。输入晶体管组和输出晶体管组以这样的方式布置在半导体衬底上，使得至少一个输入晶体管和至少一个输出晶体管被组合在一起以形成晶体管组。每个晶体管组以重复图案排列。在每个晶体管组中，即使在半导体器件内发生温度梯度，晶体管也具有相同的温度并且显示相同的温度依赖性。因此，可以准确地获得电流镜电路的镜面比。

5. 发明授权

US07453310B2 Switching circuit having two MOS-FETS 有权
标题翻译：具有两个MOS-FET的开关电路
公开(公告)号：US07453310B2
公开(公告)日：2008-11-18
申请号：US11500301
申请日：2006-08-08
申请人： Kingo Ota , Shoichi Okuda
发明人： Kingo Ota , Shoichi Okuda
IPC分类号： H03K17/06
CPC分类号： H03K17/6874 , H03K17/0822
摘要： A switching circuit of the present invention can be advantageously used in an electronic control unit mounted on an automotive vehicle. The switching circuit is constituted by a pair of P-channel MOS-FETs connected in series between an input terminal and an output terminal. Sources of both MOS-FETs are connected to a common source junction and gates thereof are connected to a common gate junction. A Zener diode connected between the common source junction and the common gate junction is used for protecting the MOS-FETs. A resistor is connected in parallel to the Zener diode to bring the switching circuit to a non-conductive state when the gate voltage at the common gate junction becomes indefinite and a high voltage is supplied to the output terminal. In place of the resistor, an additional P-channel MOS-FET may be used in the switching circuit to bring the switching circuit to the non-conductive state when the voltage at the common gate junction becomes indefinite.
摘要翻译：本发明的开关电路可以有利地用于安装在机动车上的电子控制单元。开关电路由在输入端子和输出端子之间串联连接的一对P沟道MOS-FET构成。两个MOS-FET的源极连接到公共源极结，并且其栅极连接到公共栅极结。连接在公共源极结和公共栅极结之间的齐纳二极管用于保护MOS-FET。当公共栅极结的栅极电压变得不确定并且向输出端子提供高电压时，电阻器与齐纳二极管并联连接，以使开关电路处于非导通状态。代替电阻器，在开关电路中可以使用附加的P沟道MOS-FET，以使得在公共栅极结处的电压变得不确定时使开关电路处于非导通状态。

6. 发明申请

US20070063747A1 Switching circuit having two MOS-FETS 有权
标题翻译：具有两个MOS-FET的开关电路
公开(公告)号：US20070063747A1
公开(公告)日：2007-03-22
申请号：US11500301
申请日：2006-08-08
申请人： Kingo Ota , Shoichi Okuda
发明人： Kingo Ota , Shoichi Okuda
IPC分类号： H03B1/00
CPC分类号： H03K17/6874 , H03K17/0822
摘要： A switching circuit of the present invention can be advantageously used in an electronic control unit mounted on an automotive vehicle. The switching circuit is constituted by a pair of P-channel MOS-FETs connected in series between an input terminal and an output terminal. Sources of both MOS-FETs are connected to a common source junction and gates thereof are connected to a common gate junction. A Zener diode connected between the common source junction and the common gate junction is used for protecting the MOS-FETs. A resistor is connected in parallel to the Zener diode to bring the switching circuit to a non-conductive state when the gate voltage at the common gate junction becomes indefinite and a high voltage is supplied to the output terminal. In place of the resistor, an additional P-channel MOS-FET may be used in the switching circuit to bring the switching circuit to the non-conductive state when the voltage at the common gate junction becomes indefinite.
摘要翻译：本发明的开关电路可以有利地用于安装在机动车上的电子控制单元。开关电路由在输入端子和输出端子之间串联连接的一对P沟道MOS-FET构成。两个MOS-FET的源极连接到公共源极结，并且其栅极连接到公共栅极结。连接在公共源极结和公共栅极结之间的齐纳二极管用于保护MOS-FET。当公共栅极结的栅极电压变得不确定并且向输出端子提供高电压时，电阻器与齐纳二极管并联连接，以使开关电路处于非导通状态。代替电阻器，在开关电路中可以使用附加的P沟道MOS-FET，以使得在公共栅极结处的电压变得不确定时使开关电路处于非导通状态。

7. 发明授权

US06954058B2 Constant current supply device 有权
标题翻译：恒流供电装置
公开(公告)号：US06954058B2
公开(公告)日：2005-10-11
申请号：US10795323
申请日：2004-03-09
申请人： Kingo Ota , Shoichi Okuda
发明人： Kingo Ota , Shoichi Okuda
IPC分类号： G05F3/26 , G05F3/16
CPC分类号： G05F3/267
摘要： In a current mirror circuit, a compensation resistor having a positive temperature coefficient is connected between the source of a MOS transistor and a power supply line. When the temperature rises, a current output by the constant current circuit and a current flowing through the drain of the MOS transistor decrease. Since the resistance of the compensation resistor increases, however, a voltage between the gate and source of another MOS transistor can be prevented from declining due to the decrease in the drain current so that an electric potential at the gate of a further MOS transistor, hence, a main current, can be prevented from fluctuating. In addition, a constant current output circuit is configured to shunt a feedback control current thereby to adjust an output current of each channel.
摘要翻译：在电流镜电路中，具有正温度系数的补偿电阻连接在MOS晶体管的源极和电源线之间。当温度升高时，由恒流电路输出的电流和流经MOS晶体管的漏极的电流减小。由于补偿电阻的电阻增加，所以可以防止另一个MOS晶体管的栅极和源极之间的电压由于漏极电流的降低而下降，从而在另一个MOS晶体管的栅极处产生电位，因此，可以防止主电流波动。此外，恒定电流输出电路被配置为分流反馈控制电流，从而调节每个通道的输出电流。

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