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11. 发明授权

US07407853B2 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US07407853B2
公开(公告)日：2008-08-05
申请号：US11077255
申请日：2005-03-11
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： H01L21/8242
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.
摘要翻译：本发明提供一种能够实现制造过程减少的显示装置的制造方法。在制造方法中，在衬底的上表面上形成半导体层。在半导体层的上表面上形成绝缘膜。使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为小于第一区域中的绝缘膜的膜厚度。

12. 发明申请

US20080176351A1 MANUFACTURING METHOD OF DISPLAY DEVICE 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20080176351A1
公开(公告)日：2008-07-24
申请号：US11843693
申请日：2007-08-23
申请人： Hideaki Shimmoto , Takahiro Kamo , Takeshi Noda , Takuo Kaitoh , Eiji Oue
发明人： Hideaki Shimmoto , Takahiro Kamo , Takeshi Noda , Takuo Kaitoh , Eiji Oue
IPC分类号： H01L21/00
CPC分类号： H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L29/04
摘要： The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for forming pseudo single crystals having strip-like crystals on a preset region of a semiconductor film formed on a substrate includes a step for forming the pseudo single crystal by radiating an energy beam to a first region of the semiconductor film while moving a radiation position of the energy beam in a first direction, and a step for forming the pseudo single crystal by radiating the energy beam to a second region of the semiconductor film while moving a radiation position of the energy beam in a second direction opposite to the first direction. The first region and the second region set sizes thereof at a position where the radiation of the energy beam is finished smaller than sizes thereof at a position where the radiation of the energy beam is started. The second region includes a portion where the second region overlaps the first region and a portion where the second region does not overlap the first region.
摘要翻译：本发明提供一种显示装置的制造方法，其可以防止在基板上形成这样的假单晶硅区域时具有带状晶体的伪单晶区域的尺寸的减小。在形成在衬底上的半导体膜的预设区域上形成具有带状晶体的伪单晶的步骤包括：通过在移动辐射的同时将能量束照射到半导体膜的第一区域来形成伪单晶的步骤能量束在第一方向的位置，以及通过在与第一方向相反的第二方向移动能量束的辐射位置的同时将能量束照射到半导体膜的第二区域来形成伪单晶的步骤。第一区域和第二区域在能量束的辐射被完成的位置处的尺寸设定为小于能量束的辐射开始的位置处的尺寸。第二区域包括第二区域与第一区域重叠的部分和第二区域与第一区域不重叠的部分。

13. 发明申请

US20080050893A1 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080050893A1
公开(公告)日：2008-02-28
申请号：US11882828
申请日：2007-08-06
申请人： Hideaki Shimmoto , Mikio Hongo , Akio Yazaki , Takeshi Noda , Takuo Kaitoh
发明人： Hideaki Shimmoto , Mikio Hongo , Akio Yazaki , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L21/479
CPC分类号： H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L27/1285
摘要： A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.
摘要翻译：一种制造显示装置的方法，通过在显示区域中形成具有使用非晶硅的TFT器件的多个像素，从而在衬底的显示区域的外侧使非晶硅脱氢和多晶化时提高多晶硅的质量并且在显示区域的外部形成具有使用多晶硅的半导体器件的多个驱动电路，该方法包括仅在用于形成驱动电路的区域中的非晶硅上照射第一连续振荡激光，以及其周边区域进行脱氢，然后仅将第二连续振荡区域照射到脱氢区域以将非晶硅多晶化，其中第一连续振荡激光器照射的区域比第二连续振荡区域激光被照射。

14. 发明申请

US20070072349A1 Manufacturing method of a display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20070072349A1
公开(公告)日：2007-03-29
申请号：US11509739
申请日：2006-08-25
申请人： Takuo Kaitoh , Eiji Oue , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Toshihiko Itoga
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： The present invention provides a manufacturing method of a display device which can decrease the lowering of a yield rate of the display device attributed to the aggregations generated by pseudo single crystallization of a silicon film. A manufacturing method of a display device includes a semiconductor film reforming step which reforms a semiconductor film into a second state in which the semiconductor film possesses elongated crystalline particles by radiating a laser beam to the semiconductor film in a first state, an aggregation detecting step which detects the aggregation of the semiconductor film which is generated in the semiconductor film reforming step, and a defect determination step which determines a product as a defective product when a position of the aggregation is present in the inside of the predetermined region and determines the product as a good product when the position of the aggregation is present outside the predetermined region.
摘要翻译：本发明提供一种显示装置的制造方法，其能够降低归因于硅膜的伪单晶化产生的聚集的显示装置的成品率的降低。显示装置的制造方法包括：半导体膜重整工序，其将第一状态下的半导体膜照射激光，将半导体膜改性为半导体膜具有细长结晶粒子的第二状态，聚集检测步骤，检测在半导体膜重整步骤中产生的半导体膜的聚集，以及缺陷确定步骤，当聚集的位置存在于预定区域的内部时，将产品确定为不合格品，并将产品确定为当聚集的位置存在于预定区域之外时，产品是良好的。

15. 发明授权

US07180095B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07180095B2
公开(公告)日：2007-02-20
申请号：US10780724
申请日：2004-02-19
申请人： Takahiro Kamo , Toshihiko Itoga , Takuo Kaitoh , Makoto Ohkura
发明人： Takahiro Kamo , Toshihiko Itoga , Takuo Kaitoh , Makoto Ohkura
IPC分类号： H01L29/15
CPC分类号： H01L29/4908 , H01L27/12 , H01L27/1214
摘要： In a display device including thin film transistors formed on an insulation substrate, the thin film transistor includes a semiconductor layer, a gate electrode and a gate insulation film which is interposed between the semiconductor layer and the gate electrode. The gate insulation film includes at least one layer of deposition film which is deposited by a deposition method, and the carbon concentration of the gate insulation film which is formed without interposing other deposition film deposited by a deposition method between the one deposition film and the semiconductor layer has the distribution in which the carbon concentration is smaller at a side close to the semiconductor layer than at a side remote from the semiconductor layer. Due to such a constitution, it is possible to obviate the elevation of a level of an interface of the insulation film with respect to a poly silicon layer and it is also possible to obviate an increase of fixed charges in the inside of the insulation film in the thin film transistor.
摘要翻译：在包括形成在绝缘基板上的薄膜晶体管的显示装置中，薄膜晶体管包括半导体层，栅电极和栅极绝缘膜，其夹在半导体层和栅电极之间。栅极绝缘膜包括通过沉积方法沉积的至少一层沉积膜，并且形成栅极绝缘膜的碳浓度，而不将其通过沉积方法沉积的其它沉积膜沉积在一个沉积膜和半导体之间在半导体层附近的一侧的碳浓度比远离半导体层的一侧具有更小的分布。由于这样的结构，可以避免绝缘膜相对于多晶硅层的界面的高度的上升，并且还可以避免绝缘膜内部的固定电荷的增加薄膜晶体管。

16. 发明授权

US08610868B2 Liquid crystal display device and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08610868B2
公开(公告)日：2013-12-17
申请号：US13042490
申请日：2011-03-08
申请人： Terunori Saitou , Hidekazu Miyake , Takuo Kaitoh , Yoshiharu Owaku
发明人： Terunori Saitou , Hidekazu Miyake , Takuo Kaitoh , Yoshiharu Owaku
IPC分类号： G02F1/1345
CPC分类号： G02F1/13458 , G02F1/1333 , G02F1/136204 , G02F2001/133388 , G02F2202/103 , G02F2202/22
摘要： In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.
摘要翻译：为了以低成本减小面积的静电来防止TFT或层间绝缘膜的电介质击穿，液晶显示装置具有在显示区域中形成层间绝缘膜和a-Si膜的构造和端子内部的控制区域。图像信号线和扫描线通过其交叉点中的层间绝缘膜和a-Si膜彼此绝缘。另一方面，在静电保护线与端子外的接地线之间仅形成层间绝缘膜。当感应到静电时，导致端子外部的区域发生介电击穿。因此，显示区域和控制区域被保护免受静电。

17. 发明授权

US08421940B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08421940B2
公开(公告)日：2013-04-16
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： G02F1/136
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

18. 发明申请

US20120326179A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE 有权
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：US20120326179A1
公开(公告)日：2012-12-27
申请号：US13526568
申请日：2012-06-19
申请人： Takuo KAITOH , Takeshi KURIYAGAWA , Ryou SAKATA , Osamu KARIKOME , Timothy J. BROSNIHAN
发明人： Takuo KAITOH , Takeshi KURIYAGAWA , Ryou SAKATA , Osamu KARIKOME , Timothy J. BROSNIHAN
IPC分类号： H01L27/15 , H01L33/58
CPC分类号： G02B26/0841 , B81B7/007 , B81B2201/045 , B81C2201/0132 , B81C2201/016
摘要： The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate.
摘要翻译： MEMS快门包括具有开口部分的快门，连接到快门的第一弹簧，连接到第一弹簧的第一锚杆，连接到第二弹簧的第二弹簧和第二锚固件，在挡板的表面上的绝缘膜所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在垂直于基板表面的方向上，并且所述绝缘膜不存在于所述多个端子的表面上，并且所述表面所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在与所述基板的表面平行的方向上以及在面向所述基板的所述一侧的相对侧上。

19. 发明授权

US08258024B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08258024B2
公开(公告)日：2012-09-04
申请号：US12606284
申请日：2009-10-27
申请人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
发明人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/04 , H01L29/78696
摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.
摘要翻译：提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

20. 发明申请

US20120081628A1 LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20120081628A1
公开(公告)日：2012-04-05
申请号：US13252478
申请日：2011-10-04
申请人： Hidekazu NITTA , Hidekazu Miyake , Takuo Kaitoh
发明人： Hidekazu NITTA , Hidekazu Miyake , Takuo Kaitoh
IPC分类号： G02F1/136 , H01L33/62
CPC分类号： G02F1/1368 , H01L29/66765 , H01L29/78618 , H01L29/78669
摘要： A liquid crystal display device intended for increasing the ON-current of a TFT in the pixel while suppressing variation of the ON-current, in which a semiconductor layer and a first n+-a-Si layer in the TFT are formed continuously by plasma CVD. The semiconductor layer and the first n+-a-Si layer are patterned simultaneously. Then, a second n+-a-Si layer is formed so as to cover the upper surface of the first n+-a-Si layer and the side portion of the semiconductor layer. The ON-current can be increased and variation of the ON-current of the TFT can be decreased by forming the first n+-a-Si layer continuously over the semiconductor layer.
摘要翻译：一种液晶显示装置，用于增加像素中的TFT的导通电流，同时抑制其中通过等离子体CVD连续地形成TFT中的半导体层和第一n + -a-Si层的导通电流的变化。同时对半导体层和第一n + a-Si层进行图案化。然后，形成第二n + a-Si层，以覆盖第一n + -a-Si层的上表面和半导体层的侧部。通过在半导体层上连续地形成第一n + -a-Si层，可以增加导通电流并且可以减小TFT的导通电流的变化。

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