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1. 发明授权

US07180095B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07180095B2
公开(公告)日：2007-02-20
申请号：US10780724
申请日：2004-02-19
申请人： Takahiro Kamo , Toshihiko Itoga , Takuo Kaitoh , Makoto Ohkura
发明人： Takahiro Kamo , Toshihiko Itoga , Takuo Kaitoh , Makoto Ohkura
IPC分类号： H01L29/15
CPC分类号： H01L29/4908 , H01L27/12 , H01L27/1214
摘要： In a display device including thin film transistors formed on an insulation substrate, the thin film transistor includes a semiconductor layer, a gate electrode and a gate insulation film which is interposed between the semiconductor layer and the gate electrode. The gate insulation film includes at least one layer of deposition film which is deposited by a deposition method, and the carbon concentration of the gate insulation film which is formed without interposing other deposition film deposited by a deposition method between the one deposition film and the semiconductor layer has the distribution in which the carbon concentration is smaller at a side close to the semiconductor layer than at a side remote from the semiconductor layer. Due to such a constitution, it is possible to obviate the elevation of a level of an interface of the insulation film with respect to a poly silicon layer and it is also possible to obviate an increase of fixed charges in the inside of the insulation film in the thin film transistor.
摘要翻译：在包括形成在绝缘基板上的薄膜晶体管的显示装置中，薄膜晶体管包括半导体层，栅电极和栅极绝缘膜，其夹在半导体层和栅电极之间。栅极绝缘膜包括通过沉积方法沉积的至少一层沉积膜，并且形成栅极绝缘膜的碳浓度，而不将其通过沉积方法沉积的其它沉积膜沉积在一个沉积膜和半导体之间在半导体层附近的一侧的碳浓度比远离半导体层的一侧具有更小的分布。由于这样的结构，可以避免绝缘膜相对于多晶硅层的界面的高度的上升，并且还可以避免绝缘膜内部的固定电荷的增加薄膜晶体管。

2. 发明授权

US08958138B2 Display device and method of manufacturing the display device 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08958138B2
公开(公告)日：2015-02-17
申请号：US13483095
申请日：2012-05-30
申请人： Hidekazu Nitta , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
发明人： Hidekazu Nitta , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
IPC分类号： G02B26/02 , G02B26/08 , B81B3/00
CPC分类号： G02B26/085 , B81B3/0072 , B81B2201/045 , B81C2201/0167
摘要： In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.
摘要翻译：在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。显示装置包括：显示面板，包括第一基板和第二基板。显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在所述至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。

3. 发明申请

US20120307334A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE 有权
标题翻译：显示装置和制造显示装置的方法
公开(公告)号：US20120307334A1
公开(公告)日：2012-12-06
申请号：US13483095
申请日：2012-05-30
申请人： Hidekazu NITTA , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
发明人： Hidekazu NITTA , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
IPC分类号： G02B26/02 , H01L33/08
CPC分类号： G02B26/085 , B81B3/0072 , B81B2201/045 , B81C2201/0167
摘要： In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.
摘要翻译：在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。显示装置包括：显示面板，包括第一基板和第二基板。显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。

4. 发明授权

US06479867B2 Thin film transistor 有权
公开(公告)号：US06479867B2
公开(公告)日：2002-11-12
申请号：US09940538
申请日：2001-08-29
申请人： Toshihiko Itoga , Takeo Shiba , Makoto Ohkura , Toshiki Kaneko
发明人： Toshihiko Itoga , Takeo Shiba , Makoto Ohkura , Toshiki Kaneko
IPC分类号： H01L2701
CPC分类号： H01L29/66757 , H01L29/78621
摘要： A thin film transistor of high reliability mounted on an insulator substrate, the transistor having a semiconductor thin film, a gate insulation film and a gate electrode in which the concentration profile of impurities in the semiconductor thin film is controlled so as to have a peak in a region other than the center of the depth for the semiconductor thin film to attain a long life for LCD.

5. 发明申请

US20050202612A1 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20050202612A1
公开(公告)日：2005-09-15
申请号：US11123496
申请日：2005-05-04
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

6. 发明授权

US07227186B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07227186B2
公开(公告)日：2007-06-05
申请号：US11123496
申请日：2005-05-04
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/20
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

7. 发明授权

US06716688B2 Irradiation of manufacturing a thin film transistor by laser irradiation 有权
标题翻译：通过激光照射制造薄膜晶体管的照射
公开(公告)号：US06716688B2
公开(公告)日：2004-04-06
申请号：US10299218
申请日：2002-11-18
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

8. 发明授权

US06903371B2 Thin film transistor and display using the same 有权
标题翻译：薄膜晶体管和显示器使用相同
公开(公告)号：US06903371B2
公开(公告)日：2005-06-07
申请号：US10773950
申请日：2004-02-06
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

9. 发明授权

US06657227B2 Transistor with thin film active region having clusters of different crystal orientation 有权
标题翻译：具有薄膜有源区的晶体管具有不同晶体取向的簇
公开(公告)号：US06657227B2
公开(公告)日：2003-12-02
申请号：US09910314
申请日：2001-07-19
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

10. 发明授权

US06452213B1 SEMICONDUCTOR DEVICE HAVING FIRST, SECOND AND THIRD NON-CRYSTALLINE FILMS SEQUENTIALLY FORMED ON INSULATING BASE WITH SECOND FILM HAVING THERMAL CONDUCTIVITY NOT LOWER THAN THAT OF FIRST FILM AND NOT HIGHER THAN THAT OF THIRD FILM, AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：具有第一，第二和第三非晶体薄膜的半导体器件在具有不低于第一薄膜且不高于第三薄膜的热导率的第二薄膜的绝缘基底上形成，及其制造方法
公开(公告)号：US06452213B1
公开(公告)日：2002-09-17
申请号：US09696002
申请日：2000-10-26
申请人： Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
发明人： Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
IPC分类号： H01L29786
CPC分类号： H01L29/66757 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/78603 , H01L29/78621 , H01L29/78633 , H01L29/78675
摘要： A first thin film is formed on one surface of an insulating base, and a second thin film having a thermal conductivity higher than the first thin film is formed on the first thin film. An amorphous semiconductor thin film having a higher thermal conductivity than the second thin film is formed on at least the second thin film. The amorphous semiconductor thin film is changed to a polycrystalline semiconductor thin film through laser annealing. The provision of the second thin film results in larger and uniform crystal grain diameters and less proturberances in the polycrystalline semiconductor thin film.
摘要翻译：第一薄膜形成在绝缘基底的一个表面上，并且在第一薄膜上形成具有高于第一薄膜的导热率的第二薄膜。至少在第二薄膜上形成具有比第二薄膜更高的热导率的非晶半导体薄膜。通过激光退火将非晶半导体薄膜变为多晶半导体薄膜。提供第二薄膜导致多晶半导体薄膜中更大且均匀的晶粒直径和较少的保护性。

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