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1. 发明申请

US20120326179A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE 有权
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：US20120326179A1
公开(公告)日：2012-12-27
申请号：US13526568
申请日：2012-06-19
申请人： Takuo KAITOH , Takeshi KURIYAGAWA , Ryou SAKATA , Osamu KARIKOME , Timothy J. BROSNIHAN
发明人： Takuo KAITOH , Takeshi KURIYAGAWA , Ryou SAKATA , Osamu KARIKOME , Timothy J. BROSNIHAN
IPC分类号： H01L27/15 , H01L33/58
CPC分类号： G02B26/0841 , B81B7/007 , B81B2201/045 , B81C2201/0132 , B81C2201/016
摘要： The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate.
摘要翻译： MEMS快门包括具有开口部分的快门，连接到快门的第一弹簧，连接到第一弹簧的第一锚杆，连接到第二弹簧的第二弹簧和第二锚固件，在挡板的表面上的绝缘膜所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在垂直于基板表面的方向上，并且所述绝缘膜不存在于所述多个端子的表面上，并且所述表面所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在与所述基板的表面平行的方向上以及在面向所述基板的所述一侧的相对侧上。

2. 发明申请

US20100102322A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100102322A1
公开(公告)日：2010-04-29
申请号：US12606284
申请日：2009-10-27
申请人： Mieko MATSUMURA , Mutsuko HATANO , Yoshiaki TOYOTA , Takuo KAITOH
发明人： Mieko MATSUMURA , Mutsuko HATANO , Yoshiaki TOYOTA , Takuo KAITOH
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/04 , H01L29/78696
摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.
摘要翻译：提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

3. 发明申请

US20100109009A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100109009A1
公开(公告)日：2010-05-06
申请号：US12608147
申请日：2009-10-29
申请人： Takeshi NODA , Toshio MIYAZAWA , Takuo KAITOH , Hiroyuki ABE
发明人： Takeshi NODA , Toshio MIYAZAWA , Takuo KAITOH , Hiroyuki ABE
IPC分类号： H01L33/00
CPC分类号： H01L29/78645 , H01L27/1214 , H01L29/42384 , H01L29/78621 , H01L29/78627
摘要： Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a gate electrode film on a light source side are formed in series. Relative areas of opposing regions between a semiconductor film and the gate electrode film with respect to channel regions are different in at least a part of the plurality of TFTs, to thereby provide a flat panel display having a structure for suppressing increase in capacitance while suppressing generation of optical leakage current.
摘要翻译：提供了在包括在光源侧的栅电极膜串联形成的多个薄膜晶体管（TFT）的情况下能够抑制漏电流的产生以及电容增加的显示装置。在多个TFT的至少一部分中，半导体膜与栅电极膜之间的相对区域相对于沟道区的相对区域是不同的，从而提供具有抑制电容增加的结构的平板显示器，同时抑制发生的漏光电流。

4. 发明申请

US20100117091A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100117091A1
公开(公告)日：2010-05-13
申请号：US12613598
申请日：2009-11-06
申请人： Takuo KAITOH , Toshio MIYAZAWA
发明人： Takuo KAITOH , Toshio MIYAZAWA
IPC分类号： H01L29/786 , H01L21/336 , H01L33/00
CPC分类号： H01L29/78618 , H01L27/12 , H01L29/04 , H01L29/66765
摘要： A display device having thin film transistors which can acquire an appropriate ON current and an appropriate OFF current and a manufacturing method thereof are provided. A display device includes: a transparent substrate; and a plurality of thin film transistors which are formed on the transparent substrate. Each thin film transistor includes a gate electrode which is stacked on the transparent substrate, a source electrode and a drain electrode which are stacked over the gate electrode, a first semiconductor film which is stacked between the gate electrode, and the source electrode and the drain electrode so as to control an electric current which flows between the source electrode and the drain electrode, an insulation film which is stacked on the first semiconductor film in a contacting manner in a state where a source-electrode-side edge portion and a drain-electrode-side edge portion of the first semiconductor film are exposed, and a second semiconductor film and a third semiconductor film which are stacked between the source-electrode-side edge portion and the source electrode T as well as between the drain-electrode-side edge portion and the drain electrode. The third semiconductor film is connected with the source electrode and the drain electrode by an ohmic contact. The second semiconductor film is formed below the third semiconductor film with resistance higher than resistance of the third semiconductor film.
摘要翻译：提供一种能够获得适当的接通电流和适当的关断电流的薄膜晶体管的显示装置及其制造方法。显示装置包括：透明基板; 以及形成在透明基板上的多个薄膜晶体管。每个薄膜晶体管包括堆叠在透明基板上的栅电极，堆叠在栅电极上的源电极和漏电极，堆叠在栅电极与源电极和漏极之间的第一半导体膜电极，以控制在源电极和漏极之间流动的电流;绝缘膜，其在源电极侧边缘部分和漏极电极的状态下以接触方式层叠在第一半导体膜上; 暴露第一半导体膜的电极侧边缘部分，并且层叠在源电极侧边缘部分和源极电极T之间以及在漏 - 电极侧之间的第二半导体膜和第三半导体膜边缘部分和漏电极。第三半导体膜通过欧姆接触与源电极和漏电极连接。第二半导体膜形成在第三半导体膜下面，电阻高于第三半导体膜的电阻。

5. 发明申请

US20100032680A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100032680A1
公开(公告)日：2010-02-11
申请号：US12536066
申请日：2009-08-05
申请人： Takuo KAITOH , Toshio Miyazawa , Takeshi Sakai
发明人： Takuo KAITOH , Toshio Miyazawa , Takeshi Sakai
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： G02F1/1368 , H01L27/124 , H01L29/458 , H01L29/78618
摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.
摘要翻译：提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

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