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11. 发明申请

US20140051239A1 DISPOSABLE CARBON-BASED TEMPLATE LAYER FOR FORMATION OF BORDERLESS CONTACT STRUCTURES 审中-公开
标题翻译：用于形成无边界接触结构的基于碳的基于模板的层
公开(公告)号：US20140051239A1
公开(公告)日：2014-02-20
申请号：US13585337
申请日：2012-08-14
申请人： Gregory Breyta , Josephine B. Chang , Sebastian U. Engelmann , Michael A. Guillorn , David P. Klaus , Adam M. Pyzyna
发明人： Gregory Breyta , Josephine B. Chang , Sebastian U. Engelmann , Michael A. Guillorn , David P. Klaus , Adam M. Pyzyna
IPC分类号： H01L21/28
CPC分类号： H01L21/823475 , H01L21/76885 , H01L21/76897 , H01L27/1203
摘要： After formation of gate stacks, a carbon-based template layer is deposited over the gate stacks, and is optionally planarized to provide a planar top surface. A hard mask layer and a photoresist layer are subsequently formed above the carbon-based template layer. A pattern including openings is formed within the photoresist layer. The pattern is subsequently transferred through the hard mask layer and the carbon-based template layer with high selectivity to gate spacers to form self-aligned cavities within the carbon-based template layer. Contact structures are formed within the carbon-based template layer by a damascene method. The hard mask layer and the carbon-based template layer are subsequently removed selective to the contact structures. The contact structures can be formed as contact bar structures or contact via structures. Optionally, a contact-level dielectric layer can be subsequently deposited.
摘要翻译：在形成栅极叠层之后，在栅极堆叠上沉积碳基模板层，并且可选地平面化以提供平坦的顶表面。随后在碳基模板层之上形成硬掩模层和光致抗蚀剂层。在光致抗蚀剂层内形成包括开口的图案。该图案随后通过硬掩模层和碳基模板层以高选择性的方式转移到栅极间隔物上，以在碳基模板层内形成自对准空穴。通过镶嵌方法在碳基模板层内形成接触结构。随后对该接触结构选择性地除去硬掩模层和碳基模板层。接触结构可以形成为接触棒结构或接触通孔结构。任选地，可随后沉积接触电介质层。

12. 发明授权

US08530136B2 Fluoroalcohol containing molecular photoresist materials and processes of use 失效
标题翻译：含氟分子光刻胶的材料及其使用方法
公开(公告)号：US08530136B2
公开(公告)日：2013-09-10
申请号：US12971292
申请日：2010-12-17
申请人： Luisa D. Bozano , Gregory Breyta , Ekmini A. DeSilva , William D. Hinsberg , Ratnam Sooriyakumaran , Linda K. Sundberg
发明人： Luisa D. Bozano , Gregory Breyta , Ekmini A. DeSilva , William D. Hinsberg , Ratnam Sooriyakumaran , Linda K. Sundberg
IPC分类号： G03F7/004 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0046 , C07C39/42 , C07C69/96 , C07C2603/92 , G03F7/0382 , G03F7/0392
摘要： Phenolic molecular glasses such as calixarenes include at least one fluoroalcohol containing unit. The fluoroalcohol containing molecular glasses can be used in photoresist compositions. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.
摘要翻译：酚醛分子玻璃如杯芳烃包括至少一种含氟代醇单元。含氟代醇的分子玻璃可用于光致抗蚀剂组合物中。还公开了使用光致抗蚀剂组合物在衬底上产生抗蚀剂图像的方法。

13. 发明申请

US20120037962A1 SEMICONDUCTOR STRUCTURE HAVING A CONTACT-LEVEL AIR GAP WITHIN THE INTERLAYER DIELECTRICS ABOVE A SEMICONDUCTOR DEVICE AND A METHOD OF FORMING THE SEMICONDUCTOR STRUCTURE USING A SELF-ASSEMBLY APPROACH 有权
标题翻译：在半导体器件之前的中间层电介质中具有接触层空气隙的半导体结构和使用自组装方法形成半导体结构的方法
公开(公告)号：US20120037962A1
公开(公告)日：2012-02-16
申请号：US12854352
申请日：2010-08-11
申请人： Gregory Breyta , David V. Horak , Elbert E. Huang , Charles W. Koburger, III , Douglas C. La Tulipe, JR. , Shom Ponoth
发明人： Gregory Breyta , David V. Horak , Elbert E. Huang , Charles W. Koburger, III , Douglas C. La Tulipe, JR. , Shom Ponoth
IPC分类号： H01L23/48 , H01L21/768 , H01L29/78
CPC分类号： H01L21/7682 , H01L21/31144 , H01L23/4821 , H01L23/485 , H01L23/5222 , H01L23/5329 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are embodiments of a semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device in order to minimize parasitic capacitances (e.g., contact-to-contact capacitance, contact-to-diffusion region capacitance, gate-to-contact capacitance, gate-to-diffusion region capacitance, etc.). Specifically, the structure can comprise a semiconductor device on a substrate and at least three dielectric layers stacked above the semiconductor device. An air gap is positioned with the second dielectric layer aligned above the semiconductor device and extending vertically from the first dielectric layer to the third dielectric layer. Also disclosed are embodiments of a method of forming such a semiconductor structure using a self-assembly approach.
摘要翻译：公开了在半导体器件之上的层间电介质中具有接触电平空气间隙的半导体结构的实施例，以便最小化寄生电容（例如，接触 - 接触电容，接触 - 扩散区电容，栅 - 接触电容，栅极到扩散区域电容等）。具体地，该结构可以包括在衬底上的半导体器件和堆叠在半导体器件上方的至少三个电介质层。定位气隙，其中第二电介质层在半导体器件上方对齐并从第一介电层垂直延伸到第三介质层。还公开了使用自组装方法形成这种半导体结构的方法的实施例。

14. 发明申请

US20110256359A1 METHOD AND MATERIAL FOR A THERMALLY CROSSLINKABLE RANDOM COPOLYMER 失效
标题翻译：一种热可交换随机共聚物的方法和材料
公开(公告)号：US20110256359A1
公开(公告)日：2011-10-20
申请号：US13156669
申请日：2011-06-09
申请人： Matthew E. Colburn , Gregory Breyta
发明人： Matthew E. Colburn , Gregory Breyta
IPC分类号： B32B3/30
CPC分类号： C09D153/00 , C08F255/00 , C08F293/005 , C08L51/06 , C08L53/00 , Y10T428/24612 , Y10T428/261 , Y10T428/269 , Y10T428/31855 , Y10T428/31938 , C08L2666/02
摘要： A structure that comprises a substrate; a cross-linked random free radical copolymer on the substrate; and a self-assembled patterned diblock copolymer film on the random copolymer; wherein the random copolymer is energy neutral with respect to each block of the diblock copolymer film. A method of making the structure is provided.
摘要翻译：一种包括基底的结构; 基底上交联的无规自由基共聚物; 和无规共聚物上自组装图案化的二嵌段共聚物膜; 其中所述无规共聚物相对于所述二嵌段共聚物膜的每个嵌段是能量中和的。提供了制作该结构的方法。

15. 发明授权

US07790350B2 Method and materials for patterning a neutral surface 有权
标题翻译：用于图案化中性面的方法和材料
公开(公告)号：US07790350B2
公开(公告)日：2010-09-07
申请号：US11882163
申请日：2007-07-30
申请人： Gregory Breyta , Matthew E. Colburn
发明人： Gregory Breyta , Matthew E. Colburn
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： H01L21/31144 , B82Y10/00 , H01L21/7682
摘要： A self assembly step for the manufacture of an electronic component comprising, e.g., a semiconductor chip or semiconductor array or wafer comprises forming a block copolymer film placed on a random copolymer film substrate operatively associated with the electronic component and the block copolymer film wherein the surface energy of the random copolymer film is tailored by use of a photolithographic or chemical process prior to the self assembly step. By prior deterministic control over regional surface properties of the random copolymer film, domains of the block copolymer film form only in predefined areas. This approach offers simplified processing and a precise control of regions where domain formation occurs. Selective removal of some of the domains allows for further processing of the electronic component.
摘要翻译：用于制造包括例如半导体芯片或半导体阵列或晶片的电子部件的自组装步骤包括形成位于与电子部件和嵌段共聚物膜操作相关的无规共聚物膜基材上的嵌段共聚物膜，其中表面在自组装步骤之前，通过使用光刻或化学方法来调整无规共聚物膜的能量。通过对无规共聚物膜的区域表面性质的先前确定性控制，嵌段共聚物膜的畴仅形成在预定区域中。这种方法提供简化的处理和精确控制域形成发生的区域。某些域的选择性删除允许进一步处理电子元件。

16. 发明授权

US07563558B2 Negative resists based on acid-catalyzed elimination of polar molecules 失效
标题翻译：基于酸催化消除极性分子的负电阻
公开(公告)号：US07563558B2
公开(公告)日：2009-07-21
申请号：US11924005
申请日：2007-10-25
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F7/00 , G03F7/004 , C08F214/18
CPC分类号： G03F7/0046 , C08F220/24 , C08F222/06 , C08F232/08 , G03F7/0382 , G03F7/0392 , G03F7/0395
摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.
摘要翻译：本发明提供了可用于负性抗蚀剂组合物的聚合物。本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。

17. 发明授权

US07354692B2 Photoresists for visible light imaging 有权
标题翻译：用于可见光成像的光致抗蚀剂
公开(公告)号：US07354692B2
公开(公告)日：2008-04-08
申请号：US11125971
申请日：2005-05-09
申请人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
发明人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
IPC分类号： G03F7/031 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译：公开了一类光刻抗蚀剂组合物，其适用于可见光并且不需要曝光后烘烤步骤。所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。

18. 发明申请

US20080033200A1 Precursors to Fluoroalkanol-Containing Olefin Monomers, and Associated Methods of Synthesis and Use 失效
标题翻译：含氟链烷醇的烯烃单体的前体及其合成和使用的相关方法
公开(公告)号：US20080033200A1
公开(公告)日：2008-02-07
申请号：US11844769
申请日：2007-08-24
申请人： Gregory Breyta , Richard DiPietro , Daniel Dawson
发明人： Gregory Breyta , Richard DiPietro , Daniel Dawson
IPC分类号： C07C69/66 , C07C31/38 , C07C35/06 , C07C35/08 , C07C35/20
CPC分类号： C07C69/653 , C07C31/42 , C07C35/48 , C07C35/52 , C07C69/65 , C07C2601/04 , C07C2601/08 , C07C2602/42
摘要： The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted α,β-unsaturated esters. The fluoroalkanol-substituted α,β-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.
摘要翻译：本发明提供氟链烷醇取代的α，β-不饱和酯的烯烃氟烷醇和氟化多元醇前体。氟烷醇取代的α，β-不饱和酯是可以容易地聚合以提供用于平版印刷光刻胶组合物的氟代烷醇取代的聚合物的烯烃。还提供了用于合成烯烃氟烷醇和氟化多元醇前体的方法。

19. 发明授权

US07300739B2 Negative resists based on a acid-catalyzed elimination of polar molecules 有权
标题翻译：基于酸催化消除极性分子的负电阻
公开(公告)号：US07300739B2
公开(公告)日：2007-11-27
申请号：US10449181
申请日：2003-05-29
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F7/004 , C08F14/00 , C08F14/18
CPC分类号： G03F7/0046 , C08F220/24 , C08F222/06 , C08F232/08 , G03F7/0382 , G03F7/0392 , G03F7/0395
摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.
摘要翻译：本发明提供了可用于负性抗蚀剂组合物的聚合物。本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。本发明的聚合物可以并入负性抗蚀剂组合物中，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。

20. 发明授权

US07297811B2 Precursors to fluoroalkanol-containing olefin monomers and associated methods of synthesis and use 有权
标题翻译：含氟链烷醇的烯烃单体的前体和相关的合成和使用方法
公开(公告)号：US07297811B2
公开(公告)日：2007-11-20
申请号：US10729453
申请日：2003-12-04
申请人： Gregory Breyta , Richard Anthony DiPietro , Daniel Joseph Dawson
发明人： Gregory Breyta , Richard Anthony DiPietro , Daniel Joseph Dawson
IPC分类号： C07C69/13 , C07C69/62 , C07C69/65 , C07C69/003
CPC分类号： C07C69/653 , C07C31/42 , C07C35/48 , C07C35/52 , C07C69/65 , C07C2601/04 , C07C2601/08 , C07C2602/42
摘要： The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted α,β-unsaturated esters. The fluoroalkanol-substituted α,β-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.
摘要翻译：本发明提供氟链烷醇取代的α，β-不饱和酯的烯烃氟烷醇和氟化多元醇前体。氟烷醇取代的α，β-不饱和酯是可以容易地聚合以提供用于平版印刷光刻胶组合物的氟代烷醇取代的聚合物的烯烃。还提供了用于合成烯烃氟烷醇和氟化多元醇前体的方法。

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