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1. 发明授权

US07767385B2 Method for lithography for optimizing process conditions 失效
标题翻译：光刻方法优化工艺条件
公开(公告)号：US07767385B2
公开(公告)日：2010-08-03
申请号：US11371820
申请日：2006-03-09
申请人： Carl E. Larson , Sharee J. McNab , Steven E. Steen , Raman G. Viswanathan , Gregory M. Wallraff
发明人： Carl E. Larson , Sharee J. McNab , Steven E. Steen , Raman G. Viswanathan , Gregory M. Wallraff
IPC分类号： G03F7/20
CPC分类号： G03F7/2022
摘要： A method of lithography is disclosed, which allows for independent resist process optimization of two or more exposure steps that are performed on a single resist layer. By providing for a separate post-exposure bake after each resist exposure step, pattern resolution for each exposure can be optimized. The method can generally be used with different lithographic techniques, and is well-suited for hybrid lithography. It has been applied to the fabrication of a device, in which the active area and the gate levels are defined in separate mask levels using hybrid lithography with an e-beam source and a 248 nm source respectively. Conditions for post-exposure bakes after the two exposure steps are independently adjusted to provide for optimized results.
摘要翻译：公开了一种光刻方法，其允许在单个抗蚀剂层上执行的两个或多个曝光步骤的独立抗蚀剂工艺优化。通过在每个抗蚀剂曝光步骤之后提供单独的曝光后烘烤，可以优化每个曝光的图案分辨率。该方法通常可以用于不同的光刻技术，并且非常适用于混合光刻。已经将其应用于器件的制造，其中使用具有电子束源和248nm源的混合光刻将有源面积和栅极电平限定在分开的掩模级中。独立调整两次曝光步骤后暴露后烘烤条件以提供优化结果。

2. 发明授权

US08034532B2 High contact angle topcoat material and use thereof in lithography process 失效
标题翻译：高接触角面漆材料及其在光刻工艺中的应用
公开(公告)号：US08034532B2
公开(公告)日：2011-10-11
申请号：US11380744
申请日：2006-04-28
申请人： Robert David Allen , Phillip Joe Brock , Carl E. Larson , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong
发明人： Robert David Allen , Phillip Joe Brock , Carl E. Larson , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong
IPC分类号： G03F7/11 , G03F7/20 , G03F7/30 , G03F7/36 , C08F14/18
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/0752 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.
摘要翻译：公开了一种用于施加在光致抗蚀剂材料上的面漆材料。面漆材料包含酸惰性化合物。面漆材料还包括聚合物或低聚物或保持架结构，其与成像层混合可忽略，并且可溶于碱性显影液。还公开了在基材上形成图案化材料层的方法和包含面漆材料的涂布基材。

3. 发明授权

US07354692B2 Photoresists for visible light imaging 有权
标题翻译：用于可见光成像的光致抗蚀剂
公开(公告)号：US07354692B2
公开(公告)日：2008-04-08
申请号：US11125971
申请日：2005-05-09
申请人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
发明人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
IPC分类号： G03F7/031 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译：公开了一类光刻抗蚀剂组合物，其适用于可见光并且不需要曝光后烘烤步骤。所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。

4. 发明授权

US5407710A Laser interconnection of circuits on transparent substrate 失效
标题翻译：电路在透明基板上的激光互连
公开(公告)号：US5407710A
公开(公告)日：1995-04-18
申请号：US101653
申请日：1993-08-04
申请人： Thomas H. Baum , Paul B. Comita , Carl E. Larson , George W. Tyndall, III
发明人： Thomas H. Baum , Paul B. Comita , Carl E. Larson , George W. Tyndall, III
IPC分类号： G02F1/1343 , C23C16/04 , G02F1/13 , H05K3/14 , H05K3/22 , H05K3/32 , B05D3/06
CPC分类号： H05K3/146 , C23C16/047 , G02F1/1309
摘要： The present invention relates to a method for the interconnection/repair of circuits on a transparent substrate at ambient temperature using laser induced chemical vapor deposition.
摘要翻译：本发明涉及使用激光诱导化学气相沉积在环境温度下在透明基板上互连/修复电路的方法。

5. 发明授权

US4760013A Sulfonium salt photoinitiators 失效
标题翻译：锍盐光引发剂
公开(公告)号：US4760013A
公开(公告)日：1988-07-26
申请号：US15402
申请日：1987-02-17
申请人： Nigel P. Hacker , Carl E. Larson
发明人： Nigel P. Hacker , Carl E. Larson
IPC分类号： C08G59/18 , C07C67/00 , C07C325/00 , C07C381/12 , C08G59/00 , C08G59/68 , G03F7/029 , G03F7/031 , G03C5/04 , C07F9/90 , C08F8/18 , G03C1/68
CPC分类号： C07C381/12 , G03F7/029 , C07C2103/24 , Y10S430/115 , Y10S430/122
摘要： Alkyldiarylsulfonium salts of 9, 10,-dithiophenoxyanthracene are useful as photoinitiators in resist compositions, such as epoxy resin formulations, particularly using long wavelength light.

6. 发明授权

US08945808B2 Self-topcoating resist for photolithography 有权
标题翻译：用于光刻的自表面涂层抗蚀剂
公开(公告)号：US08945808B2
公开(公告)日：2015-02-03
申请号：US11380731
申请日：2006-04-28
申请人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
发明人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
IPC分类号： G03F7/039 , G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0392 , G03F7/0757
摘要： Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要翻译：公开了可用于浸没式光刻中而不使用另外的顶涂层的抗蚀剂组合物。抗蚀剂组合物包含光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和自 - 面漆抗蚀剂添加剂。还公开了使用抗蚀剂组合物在衬底上形成图案化材料层的方法。

7. 发明申请

US20080166669A1 Photoresists for Visible Light Imaging 有权
标题翻译：可见光成像光刻胶
公开(公告)号：US20080166669A1
公开(公告)日：2008-07-10
申请号：US12050589
申请日：2008-03-18
申请人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
发明人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
IPC分类号： G03F7/30
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译：公开了一种使用一类光刻胶组合物形成图形物体的方法，其适用于可见光并且不需要曝光后烘烤步骤。所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。

8. 发明授权

US4775608A Generation of capacitive servo patterns on magnetic storage disks 失效
标题翻译：在磁存储盘上产生电容伺服模式
公开(公告)号：US4775608A
公开(公告)日：1988-10-04
申请号：US104476
申请日：1987-10-05
申请人： Thomas H. Baum , Phillip J. Brock , James Economy , Robert L. Jackson , Carl E. Larson , James R. Lyerla, Jr. , Christopher R. Moylan
发明人： Thomas H. Baum , Phillip J. Brock , James Economy , Robert L. Jackson , Carl E. Larson , James R. Lyerla, Jr. , Christopher R. Moylan
IPC分类号： G11B5/596 , G11B5/60 , G11B5/82 , G11B5/84 , G11B9/06 , G11B21/10 , G03C5/00
CPC分类号： G11B5/6005 , G11B5/596 , G11B5/82 , G11B5/84
摘要： A process for generating a capacitive servo pattern on a magnetic storage disk, comprising the steps of: (1) coating the disk with a solution of noble metal compound to form a film of the compound on the disk, (2) exposing said film to radiation through a mask to generate an image on the film, and (3) plating the disk on the areas exposed to radiation.
摘要翻译：一种用于在磁存储盘上产生电容伺服图案的方法，包括以下步骤：（1）用贵金属化合物的溶液涂覆盘以在盘上形成化合物的膜，（2）将所述膜暴露于通过掩模进行辐射以在膜上产生图像，和（3）在暴露于辐射的区域上电镀该盘。

9. 发明授权

US07807340B2 Photoresists for visible light imaging 有权
标题翻译：用于可见光成像的光致抗蚀剂
公开(公告)号：US07807340B2
公开(公告)日：2010-10-05
申请号：US12050589
申请日：2008-03-18
申请人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
发明人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
IPC分类号： G03F7/26
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译：公开了一种使用一类光刻胶组合物形成图形物体的方法，其适用于可见光并且不需要曝光后烘烤步骤。所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基，R 1和R 2可以相同或不同， X-R3，其中X是O或S，R3是C1-C6烃基或含杂原子的C1-C6烃基，R4和R5独立地选自氢和-X-R3，或者如果每个另一些可以一起形成五元或六元芳香环，条件是Ar1，Ar2或R3中含有的任何杂原子都是O或S.使用所公开的光致抗蚀剂，特别是用于制造全息衍射光栅，也被公开。

10. 发明授权

US5220044A Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films 失效
标题翻译：配体稳定了+1金属β-二酮配位络合物及其在金属薄膜化学气相沉积中的应用
公开(公告)号：US5220044A
公开(公告)日：1993-06-15
申请号：US852285
申请日：1992-03-16
申请人： Thomas H. Baum , Carl E. Larson , Scott K. Reynolds
发明人： Thomas H. Baum , Carl E. Larson , Scott K. Reynolds
IPC分类号： C23C16/18 , H05K3/40
CPC分类号： C23C16/18 , H05K3/4076
摘要： Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.
摘要翻译：用于在衬底上沉积铜，银，铑和铱金属的化学气相沉积前体包括所述金属的配体稳定的+1金属β-二酮配位络合物。还提供了这些前体在CVD工艺中的使用。

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