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1. 发明授权

US07354692B2 Photoresists for visible light imaging 有权
标题翻译：用于可见光成像的光致抗蚀剂
公开(公告)号：US07354692B2
公开(公告)日：2008-04-08
申请号：US11125971
申请日：2005-05-09
申请人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
发明人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
IPC分类号： G03F7/031 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译：公开了一类光刻抗蚀剂组合物，其适用于可见光并且不需要曝光后烘烤步骤。所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。

2. 发明申请

US20080166669A1 Photoresists for Visible Light Imaging 有权
标题翻译：可见光成像光刻胶
公开(公告)号：US20080166669A1
公开(公告)日：2008-07-10
申请号：US12050589
申请日：2008-03-18
申请人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
发明人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
IPC分类号： G03F7/30
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译：公开了一种使用一类光刻胶组合物形成图形物体的方法，其适用于可见光并且不需要曝光后烘烤步骤。所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。

3. 发明授权

US07807340B2 Photoresists for visible light imaging 有权
标题翻译：用于可见光成像的光致抗蚀剂
公开(公告)号：US07807340B2
公开(公告)日：2010-10-05
申请号：US12050589
申请日：2008-03-18
申请人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
发明人： Gregory Breyta , Daniel Joseph Dawson , Carl E. Larson , Gregory Michael Wallraff
IPC分类号： G03F7/26
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译：公开了一种使用一类光刻胶组合物形成图形物体的方法，其适用于可见光并且不需要曝光后烘烤步骤。所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基，R 1和R 2可以相同或不同， X-R3，其中X是O或S，R3是C1-C6烃基或含杂原子的C1-C6烃基，R4和R5独立地选自氢和-X-R3，或者如果每个另一些可以一起形成五元或六元芳香环，条件是Ar1，Ar2或R3中含有的任何杂原子都是O或S.使用所公开的光致抗蚀剂，特别是用于制造全息衍射光栅，也被公开。

4. 发明授权

US06730452B2 Lithographic photoresist composition and process for its use 有权
标题翻译：平版光刻胶组合物及其使用方法
公开(公告)号：US06730452B2
公开(公告)日：2004-05-04
申请号：US09771261
申请日：2001-01-26
申请人： Phillip Joe Brock , Daniel Joseph Dawson , Hiroshi Ito , Gregory Michael Wallraff
发明人： Phillip Joe Brock , Daniel Joseph Dawson , Hiroshi Ito , Gregory Michael Wallraff
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0382 , G03F7/0397 , Y10S430/108
摘要： A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
摘要翻译：提供可用作化学扩增光致抗蚀剂的平版光刻胶组合物。在优选的实施方案中，组合物对深紫外辐射即波长小于250nm（包括157nm，193nm和248nm辐射）的辐射基本上是透明的，并具有改进的灵敏度和分辨率。组合物包含氟化乙烯基聚合物，特别是氟化甲基丙烯酸酯，氟化甲基丙烯腈或氟化甲基丙烯酸，以及光酸产生剂。聚合物可以是均聚物或共聚物。还提供了使用该组合物在衬底上产生抗蚀剂图像的方法，即在集成电路等的制造中。

5. 发明授权

US08945808B2 Self-topcoating resist for photolithography 有权
标题翻译：用于光刻的自表面涂层抗蚀剂
公开(公告)号：US08945808B2
公开(公告)日：2015-02-03
申请号：US11380731
申请日：2006-04-28
申请人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
发明人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
IPC分类号： G03F7/039 , G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0392 , G03F7/0757
摘要： Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要翻译：公开了可用于浸没式光刻中而不使用另外的顶涂层的抗蚀剂组合物。抗蚀剂组合物包含光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和自 - 面漆抗蚀剂添加剂。还公开了使用抗蚀剂组合物在衬底上形成图案化材料层的方法。

6. 发明授权

US07820369B2 Method for patterning a low activation energy photoresist 有权
标题翻译：图案化低活化能光致抗蚀剂的方法
公开(公告)号：US07820369B2
公开(公告)日：2010-10-26
申请号：US10729452
申请日：2003-12-04
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory Michael Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory Michael Wallraff
IPC分类号： G03F7/30
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟烷基RH的烯烃单体，（ii）含有侧氟化烷基磺酰胺基RS的烯烃单体，和（iii）其组合。缩醛或缩酮键可以包含在第一烯属单体中的酸可裂解取代基RCL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

7. 发明授权

US07193023B2 Low activation energy photoresists 有权
标题翻译：低活化能光刻胶
公开(公告)号：US07193023B2
公开(公告)日：2007-03-20
申请号：US10729169
申请日：2003-12-04
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory Michael Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory Michael Wallraff
IPC分类号： C08F112/68
CPC分类号： G03F7/0046 , G03F7/0397
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯属单体， SUP），和（iii）其组合。缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

8. 发明授权

US07288362B2 Immersion topcoat materials with improved performance 有权
标题翻译：浸渍面漆材料具有改进的性能
公开(公告)号：US07288362B2
公开(公告)日：2007-10-30
申请号：US11063940
申请日：2005-02-23
申请人： Robert David Allen , Phillip Joe Brock , Dario Gil , William Dinan Hinsberg , Carl Eric Larson , Linda Karin Sundberg , Gregory Michael Wallraff
发明人： Robert David Allen , Phillip Joe Brock , Dario Gil , William Dinan Hinsberg , Carl Eric Larson , Linda Karin Sundberg , Gregory Michael Wallraff
IPC分类号： G03C1/73 , G03C1/825 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
摘要翻译：公开了一种用于施加在光致抗蚀剂材料上的面漆材料。面漆材料包含至少一种溶剂和在含水碱性显影剂中具有至少3000 /秒的溶解速率的聚合物。聚合物含有包含以下两种结构之一的六氟醇单体单元：其中n是整数。面漆材料可以用于光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。面漆材料优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

9. 发明授权

US06180317B2 Composition for photoimaging 失效
标题翻译：光成像用组合物
公开(公告)号：US06180317B2
公开(公告)日：2001-01-30
申请号：US07793889
申请日：1991-11-18
申请人： Robert David Allen , Richard Allen Day , Donald Herman Glatzel , William Dinan Hinsberg , John Richard Mertz , David John Russell , Gregory Michael Wallraff
发明人： Robert David Allen , Richard Allen Day , Donald Herman Glatzel , William Dinan Hinsberg , John Richard Mertz , David John Russell , Gregory Michael Wallraff
IPC分类号： G03C1725
CPC分类号： G03F7/038
摘要： An improved photoimagable cationically polymerizable epoxy based coating material is provided, that is suitable for use on a variety of substrates including epoxy-glass laminate boards cured with dicyandiamide. The material includes an epoxy resin system consisting essentially of between about 10% and about 80% by weight of a polyol resin which is a condensation product of epichlorohydrin and bisphenol A having a molecular weight of between about 40,000 and 130,000; and between about 35% and 72% by weight of an epoxidized glycidyl ether of a brominated bisphenol A having a softening point of between about 60° C. and about 110° C. and a molecular weight of between about 600 and 2,500. Optionally, a third resin may be added to the resin system. To this resin system is added about 0.1 to about 15 parts by weight per 100 parts of resin of a cationic photoinitiator capable of initiating polymerization of said epoxidized resin system upon exposure to actinic radiation; the system being further characterized by having an absorbance of light in the 330 to 700 nm region of less than 0.1 for a 2.0 mil thick film. Optionally a photosensitizer such as perylene and its derivatives or anthracene and its derivatives may be added.
摘要翻译：提供了一种改进的可光成像的可阳离子聚合的环氧基涂料，适用于各种基材，包括用双氰胺固化的环氧玻璃层压板。该材料包括基本上由约10重量％至约80重量％的多元醇树脂组成的环氧树脂体系，多元醇树脂是分子量为约40,000至130,000的表氯醇和双酚A的缩合产物; 和约35重量％至72重量％的软化点在约60℃至约110℃之间且分子量为约600至2,500之间的溴化双酚A的环氧化缩水甘油醚。任选地，可以向树脂体系中加入第三树脂。向该树脂体系中添加约0.1〜约15重量份/ 100份阳离子光引发剂的树脂，其能够在暴露于光化辐射下引发所述环氧化树脂体系的聚合; 该系统的特征还在于，对于2.0密耳厚的膜，在330至700nm区域中的光的吸光度小于0.1。任选地，可加入光敏剂如苝及其衍生物或蒽及其衍生物。

10. 发明授权

US5786131A Process for use of photoresist composition with deep ultraviolet radiation 失效
标题翻译：使用具有深紫外线辐射的光刻胶组合物的方法
公开(公告)号：US5786131A
公开(公告)日：1998-07-28
申请号：US678868
申请日：1996-07-12
申请人： Robert David Allen , Richard Anthony DiPietro , Gregory Michael Wallraff
发明人： Robert David Allen , Richard Anthony DiPietro , Gregory Michael Wallraff
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027 , G03C5/00 , G03C1/492
CPC分类号： G03F7/0045 , Y10S430/111
摘要： The present invention relates to a process for generating a resist image on a substrate utilizing a resist composition comprising (a) a radiation-sensitive acid generator, (b) a substituted androstane, and (c) a copolymer acrylate binder. The resist image is made using deep ultraviolet radiation.
摘要翻译：本发明涉及一种使用抗蚀剂组合物在基材上生成抗蚀剂图像的方法，该抗蚀剂组合物包含（a）辐射敏感酸产生剂，（b）取代的雄甾烷和（c）共聚物丙烯酸酯粘合剂。抗蚀剂图像是使用深紫外线辐射制成的。

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