专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08609238B2 Method and material for a thermally crosslinkable random copolymer 失效
标题翻译：用于热交联的无规共聚物的方法和材料
公开(公告)号：US08609238B2
公开(公告)日：2013-12-17
申请号：US13156669
申请日：2011-06-09
申请人： Matthew E. Colburn , Gregory Breyta
发明人： Matthew E. Colburn , Gregory Breyta
IPC分类号： B32B5/00 , B32B27/18 , B32B27/28 , B32B27/30
CPC分类号： C09D153/00 , C08F255/00 , C08F293/005 , C08L51/06 , C08L53/00 , Y10T428/24612 , Y10T428/261 , Y10T428/269 , Y10T428/31855 , Y10T428/31938 , C08L2666/02
摘要： A structure that comprises a substrate; a cross-linked random free radical copolymer on the substrate; and a self-assembled patterned diblock copolymer film on the random copolymer; wherein the random copolymer is energy neutral with respect to each block of the diblock copolymer film. A method of making the structure is provided.
摘要翻译：一种包括基底的结构; 基底上交联的无规自由基共聚物; 和无规共聚物上自组装图案化的二嵌段共聚物膜; 其中所述无规共聚物相对于所述二嵌段共聚物膜的每个嵌段是能量中和的。提供了制作该结构的方法。

2. 发明申请

US20110256359A1 METHOD AND MATERIAL FOR A THERMALLY CROSSLINKABLE RANDOM COPOLYMER 失效
标题翻译：一种热可交换随机共聚物的方法和材料
公开(公告)号：US20110256359A1
公开(公告)日：2011-10-20
申请号：US13156669
申请日：2011-06-09
申请人： Matthew E. Colburn , Gregory Breyta
发明人： Matthew E. Colburn , Gregory Breyta
IPC分类号： B32B3/30
CPC分类号： C09D153/00 , C08F255/00 , C08F293/005 , C08L51/06 , C08L53/00 , Y10T428/24612 , Y10T428/261 , Y10T428/269 , Y10T428/31855 , Y10T428/31938 , C08L2666/02
摘要： A structure that comprises a substrate; a cross-linked random free radical copolymer on the substrate; and a self-assembled patterned diblock copolymer film on the random copolymer; wherein the random copolymer is energy neutral with respect to each block of the diblock copolymer film. A method of making the structure is provided.
摘要翻译：一种包括基底的结构; 基底上交联的无规自由基共聚物; 和无规共聚物上自组装图案化的二嵌段共聚物膜; 其中所述无规共聚物相对于所述二嵌段共聚物膜的每个嵌段是能量中和的。提供了制作该结构的方法。

3. 发明授权

US07790350B2 Method and materials for patterning a neutral surface 有权
标题翻译：用于图案化中性面的方法和材料
公开(公告)号：US07790350B2
公开(公告)日：2010-09-07
申请号：US11882163
申请日：2007-07-30
申请人： Gregory Breyta , Matthew E. Colburn
发明人： Gregory Breyta , Matthew E. Colburn
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： H01L21/31144 , B82Y10/00 , H01L21/7682
摘要： A self assembly step for the manufacture of an electronic component comprising, e.g., a semiconductor chip or semiconductor array or wafer comprises forming a block copolymer film placed on a random copolymer film substrate operatively associated with the electronic component and the block copolymer film wherein the surface energy of the random copolymer film is tailored by use of a photolithographic or chemical process prior to the self assembly step. By prior deterministic control over regional surface properties of the random copolymer film, domains of the block copolymer film form only in predefined areas. This approach offers simplified processing and a precise control of regions where domain formation occurs. Selective removal of some of the domains allows for further processing of the electronic component.
摘要翻译：用于制造包括例如半导体芯片或半导体阵列或晶片的电子部件的自组装步骤包括形成位于与电子部件和嵌段共聚物膜操作相关的无规共聚物膜基材上的嵌段共聚物膜，其中表面在自组装步骤之前，通过使用光刻或化学方法来调整无规共聚物膜的能量。通过对无规共聚物膜的区域表面性质的先前确定性控制，嵌段共聚物膜的畴仅形成在预定区域中。这种方法提供简化的处理和精确控制域形成发生的区域。某些域的选择性删除允许进一步处理电子元件。

4. 发明授权

US08017194B2 Method and material for a thermally crosslinkable random copolymer 有权
标题翻译：用于热交联的无规共聚物的方法和材料
公开(公告)号：US08017194B2
公开(公告)日：2011-09-13
申请号：US12015825
申请日：2008-01-17
申请人： Matthew E. Colburn , Gregory Breyta
发明人： Matthew E. Colburn , Gregory Breyta
IPC分类号： B05D3/00
CPC分类号： C09D153/00 , C08F255/00 , C08F293/005 , C08L51/06 , C08L53/00 , Y10T428/24612 , Y10T428/261 , Y10T428/269 , Y10T428/31855 , Y10T428/31938 , C08L2666/02
摘要： A structure that comprises a substrate; a cross-linked random free radical copolymer on the substrate; and a self-assembled patterned diblock copolymer film on the random copolymer; wherein the random copolymer is energy neutral with respect to each block of the diblock copolymer film. A method of making the structure is provided.
摘要翻译：一种包括基底的结构; 基底上交联的无规自由基共聚物; 和无规共聚物上自组装图案化的二嵌段共聚物膜; 其中所述无规共聚物相对于所述二嵌段共聚物膜的每个嵌段是能量中和的。提供了制作该结构的方法。

5. 发明申请

US20090035668A1 Method and materials for patterning a neutral surface 有权
标题翻译：用于图案化中性面的方法和材料
公开(公告)号：US20090035668A1
公开(公告)日：2009-02-05
申请号：US11882163
申请日：2007-07-30
申请人： Gregory Breyta , Matthew E. Colburn
发明人： Gregory Breyta , Matthew E. Colburn
IPC分类号： G03C5/00
CPC分类号： H01L21/31144 , B82Y10/00 , H01L21/7682
摘要： A self assembly step for the manufacture of an electronic component comprising, e.g., a semiconductor chip or semiconductor array or wafer comprises forming a diblock copolymer film placed on a random copolymer film substrate operatively associated with the electronic component and the diblock copolymer film wherein the surface energy of the random copolymer film is tailored by use of a photolithographic process prior to the self assembly step. By prior deterministic control over regional surface properties of the random copolymer film, domains of the diblock copolymer film form only in predefined areas. This approach offers simplified processing and a precise control of regions where domain formation occurs. Selective removal of some of the domains allows for further processing of the electronic component.
摘要翻译：用于制造包括例如半导体芯片或半导体阵列或晶片的电子部件的自组装步骤包括形成放置在与电子部件和二嵌段共聚物膜操作相关的无规共聚物膜基材上的二嵌段共聚物膜，其中表面在自组装步骤之前通过使用光刻工艺来调整无规共聚物膜的能量。通过对无规共聚物膜的区域表面性质的先前确定性控制，二嵌段共聚物膜的畴仅形成在预定区域中。这种方法提供简化的处理和精确控制域形成发生的区域。某些域的选择性删除允许进一步处理电子元件。

6. 发明申请

US20090186234A1 METHOD AND MATERIAL FOR A THERMALLY CROSSLINKABLE RANDOM COPOLYMER 有权
标题翻译：一种热可交换随机共聚物的方法和材料
公开(公告)号：US20090186234A1
公开(公告)日：2009-07-23
申请号：US12015825
申请日：2008-01-17
申请人： Matthew E. Colburn , Gregory Breyta
发明人： Matthew E. Colburn , Gregory Breyta
IPC分类号： B32B27/28 , C08F255/00
CPC分类号： C09D153/00 , C08F255/00 , C08F293/005 , C08L51/06 , C08L53/00 , Y10T428/24612 , Y10T428/261 , Y10T428/269 , Y10T428/31855 , Y10T428/31938 , C08L2666/02
摘要： A structure that comprises a substrate; a cross-linked random free radical copolymer on the substrate; and a self-assembled patterned diblock copolymer film on the random copolymer; wherein the random copolymer is energy neutral with respect to each block of the diblock copolymer film. A method of making the structure is provided.
摘要翻译：一种包括基底的结构; 基底上交联的无规自由基共聚物; 和无规共聚物上自组装图案化的二嵌段共聚物膜; 其中所述无规共聚物相对于所述二嵌段共聚物膜的每个嵌段是能量中和的。提供了制作该结构的方法。

7. 发明申请

US20080265377A1 AIR GAP WITH SELECTIVE PINCHOFF USING AN ANTI-NUCLEATION LAYER 审中-公开
标题翻译：使用反核层的选择性PINCHOFF的空气隙
公开(公告)号：US20080265377A1
公开(公告)日：2008-10-30
申请号：US11741908
申请日：2007-04-30
申请人： Lawrence A. Clevenger , Matthew E. Colburn , Daniel C. Edelstein , Shom Ponoth , Gregory Breyta
发明人： Lawrence A. Clevenger , Matthew E. Colburn , Daniel C. Edelstein , Shom Ponoth , Gregory Breyta
IPC分类号： H01L21/311 , H01L29/06
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A method of forming cavities within a semiconductor device is disclosed. The method comprises depositing an anti-nucleating layer on the interior surface of cavities within an ILD layer of the semiconductor device. This anti-nucleating layer prevents subsequently deposited dielectric layers from forming within the cavities. By preventing the formation of these layers, the capacitance is reduced, thereby resulting in improved semiconductor performance.
摘要翻译：公开了一种在半导体器件内形成空腔的方法。该方法包括在半导体器件的ILD层内的空腔的内表面上沉积抗成核层。该抗成核层防止随后沉积的介电层在空腔内形成。通过防止这些层的形成，电容减小，从而提高半导体性能。

8. 发明授权

US08901741B2 Interconnect structures with engineered dielectrics with nanocolumnar porosity 有权
标题翻译：互连结构与具有纳米柱孔隙度的工程电介质
公开(公告)号：US08901741B2
公开(公告)日：2014-12-02
申请号：US13531518
申请日：2012-06-23
申请人： Matthew E. Colburn , Satya V. Nitta , Sampath Purushothaman , Charles Black , Kathryn Guarini
发明人： Matthew E. Colburn , Satya V. Nitta , Sampath Purushothaman , Charles Black , Kathryn Guarini
IPC分类号： H01L23/522 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops of the hole array with a cap dielectric. Variations of the method and means to construct a multilevel nanocolumnar interconnect structure are also described.
摘要翻译：描述了一种形成具有纳米柱状金属间电介质的互连结构的方法，涉及使用固体电介质构造互连结构，并通过模板形成和蚀刻引入垂直排列的纳米尺度孔的规则阵列以形成孔阵列并随后夹紧具有盖电介质的孔阵列的顶部。还描述了构建多层纳米柱状互连结构的方法和方法的变化。

9. 发明授权

US08361704B2 Method for reducing tip-to-tip spacing between lines 有权
标题翻译：减少线间距尖端间距的方法
公开(公告)号：US08361704B2
公开(公告)日：2013-01-29
申请号：US12352051
申请日：2009-01-12
申请人： Matthew E. Colburn , Wai-kin Li , Haining S. Yang
发明人： Matthew E. Colburn , Wai-kin Li , Haining S. Yang
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： This invention provides a method for reducing tip-to-tip spacing between lines using a combination of photolithographic and copolymer self-assembling lithographic techniques. A mask layer is first formed over a substrate with a line structure. A trench opening of a width d is created in the mask layer. A layer of a self-assembling block copolymer is then applied over the mask layer. The block copolymer layer is annealed to form a single unit polymer block of a width or a diameter w which is smaller than d inside the trench opening. The single unit polymer block is selectively removed to form a single opening of a width or a diameter w inside the trench opening. An etch transfer process is performed using the single opening as a mask to form an opening in the line structure in the substrate.
摘要翻译：本发明提供了使用光刻和共聚物自组装光刻技术的组合来减少线之间的尖端到尖端间隔的方法。首先在具有线结构的衬底上形成掩模层。在掩模层中形成宽度为d的沟槽开口。然后将一层自组装嵌段共聚物施加在掩模层上。对嵌段共聚物层进行退火以在沟槽开口内形成宽度或直径w小于d的单一单元聚合物嵌段。选择性地去除单个单元聚合物嵌段以在沟槽开口内形成宽度或直径w的单个开口。使用单个开口作为掩模进行蚀刻转印处理，以在基板中的线结构中形成开口。

10. 发明授权

US08137893B2 Chemical trim of photoresist lines by means of a tuned overcoat 有权
标题翻译：通过调整的外涂层对光致抗蚀剂线进行化学修饰
公开(公告)号：US08137893B2
公开(公告)日：2012-03-20
申请号：US12983297
申请日：2011-01-01
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式