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101. 发明公开

EP0140455A3 Process for the production of masks for the exposure of resits with X-ray litography 失效
标题翻译：生产用于X射线照相曝光的掩模的方法
公开(公告)号：EP0140455A3
公开(公告)日：1987-05-06
申请号：EP84201562
申请日：1984-10-31
申请人： Philips Patentverwaltung GmbH , N.V. Philips' Gloeilampenfabrieken
发明人： Lüthje, Holger , Bruns, Angelika , Harms, Margret , Matthiessen, Bernd
IPC分类号： G03F01/00
CPC分类号： G03F1/22

102. 发明公开

EP0104684A3 Mask for obtaining textured patterns in resist layers using X-ray lithography and method of manufacturing the same 有权转让
标题翻译：使用X射线光刻获得耐蚀层中纹理图案的掩模及其制造方法
公开(公告)号：EP0104684A3
公开(公告)日：1986-07-09
申请号：EP83201241
申请日：1983-08-31
申请人： Philips Patentverwaltung GmbH , N.V. Philips' Gloeilampenfabrieken
发明人： Harms, Margret , Lüthje, Holger , Matthiessen, Bernd , Bruns, Angelika
IPC分类号： G03F01/00
CPC分类号： G03F1/22 , Y10S430/168

103. 发明公开

EP0097831A3 Optical projection systems and methods of producing optical images 失效
标题翻译：光学投影系统和光学图像的制作方法
公开(公告)号：EP0097831A3
公开(公告)日：1986-05-07
申请号：EP83105435
申请日：1983-06-01
申请人： International Business Machines Corporation
发明人： Lin, Burn Jeng
IPC分类号： G03F07/20 , G03F01/00
CPC分类号： G03F7/70283 , G03F1/50 , G03F7/20 , G03F7/2002
摘要： (D Semiconductor fabrication using optical projection apparatus is enhanced in an arrangement having means for producing exposures tailored to the patterns on the conventional photo-mask. A predetermined correction photo-mask capable of producing different exposure levels according to the original mask pattern is superimposed with the original mask on the semiconductor wafer by sequential double exposure using an additional mask change and alignment. The drawings show an original mask pattern and a correction mask pattern. A better arrangement provides two beams simultaneously illuminating the two masks; the two beams are recombined with a high quality beam splitter arrangement before reaching the imaging lens. The two masks only have to be aligned to each other once. Afterwards, the wafer is exposed regularly. Therefore, an uncorrected image has the lowest threshold for an isolated opening, medium threshold for equal lines and spaces, high threshold for an isolated opaque line. After the correction scheme, all thresholds are made equal. The correction mask is made of grainless dyes of different light transmission or of one semitransparent substance of different thickness, such as thin layers of iron oxide, chromium or silicon. Standard lithographic patterning techniques, such as substractive etching, lift off or plating are used to fabricate the correction mask.

104. 发明公开

EP0075949A3 Ion beam processing apparatus and method of correcting mask defects 失效
标题翻译：离子束处理装置和校正掩模缺陷的方法
公开(公告)号：EP0075949A3
公开(公告)日：1986-02-05
申请号：EP82109014
申请日：1982-09-29
申请人： Hitachi, Ltd.
发明人： Yamaguchi, Hiroshi , Miyauchi, Tateoki , Shimase, Akira , Hongo, Mikio
IPC分类号： H01J37/30 , G03F01/00
CPC分类号： H01L21/30 , G03F1/74 , H01J37/3007 , H01J37/3053 , H01J2237/0044 , H01J2237/0807
摘要： Disclosed is an ion beam processing apparatus comprising within a vacuum container (39) a specimen chamber (40) with a thble (55) for mounting a specimen (90) provided therein, a high intensity ion source (65), such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low temperature, confronting the specimen chamber, an extraction electrode (67) for extracting an ion beam out of the ion source, a charged-particle optical system (70-72) for focusing the ion beam to a spot, and an aperture (69) for adjusting the spot diameter.

105. 发明公开

EP0125086A3 Imageable vapor-deposited colorant layers 失效
标题翻译：可形成蒸气沉积的彩色层
公开(公告)号：EP0125086A3
公开(公告)日：1985-07-10
申请号：EP84302899
申请日：1984-04-30
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY
发明人： Fisch, Richard S. Minnesota Mining and Man. Co. , Barjesteh, Hamid Minnesota Mining and Man. Co.
IPC分类号： G03F01/00
CPC分类号： G03F1/56
摘要： Vapor deposited colorant layers can be used to provide optical density in photoresist imaging articles. The use of organic materials containing carbonyl groups (which are not part of carboxyl groups), phenoxy groups, ester groups, or alcohol groups over vapor deposited metal layers improves their marresistance. These organic materials can improve the properties of the metal layer when used in photoresist imaging films.

106. 发明公开

EP0103844A3 X-ray mask 失效
标题翻译： X-RAY面膜
公开(公告)号：EP0103844A3
公开(公告)日：1985-07-03
申请号：EP83109046
申请日：1983-09-13
申请人： HITACHI, LTD.
发明人： Kimura, Takeshi , Obayashi, Hidehito , Mochiji, Kozo
IPC分类号： G03F01/00
CPC分类号： G03F1/22
摘要： An X-ray mask has a mask pattern (3) formed from nickel or a material having nickel as a principal component. The X-ray mask has characteristics substantially equal to those of the conventional X-ray mask employing Au as a mask pattern (3) and is much lower in price than the latter. In addition, since the X-ray mask can easily be formed by electroless plating, it is possible to form the mask pattern (3) with a higher accuracy than that in case of employing Au.

107. 发明公开

EP0119761A3 Process for preparing silver halide photographic light-sensitive material for photo-mechanical process 失效
标题翻译：制备用于光机械过程的银盐摄影感光材料的方法
公开(公告)号：EP0119761A3
公开(公告)日：1985-03-13
申请号：EP84301104
申请日：1984-02-21
申请人： FUJI PHOTO FILM CO., LTD.
发明人： Ogawa, Masashi c/o Fuji Photo Film Co. Ltd. , Urata, Yukihide c/o Fuji Photo Film Co. Ltd. , Yamauchi, Shingo c/o Fuji Photo Film Co. Ltd. , Kasama, Yasuo c/o Fuji Photo Film Co. Ltd.
IPC分类号： G03C01/76 , G03F01/00 , G03C01/30
CPC分类号： G03C1/30
摘要： A process for preparing a silver halide photographic light-sensitive material for photo-mechanical process is disclosed. The process involves coating a light-sensitive silver halide emulsion layer on a support and then coating a light-insensitive upper layer on the emulsion layer. The upper layer is comprised of a hydrophilic colloid and is coated on an upper portion of the emulsion layer. A composite solution is then coated on the light-insensitive upper layer. The composite solution is comprised of a solution which includes a non-diffusion polymeric hardener in a gelatin solution in an amount sufficient to make the melting time of the layer made by the gelatin solution larger than the melting time of the emulsion layer. The composite solution is coated in an amount such that the gelatin coating amount is in the range of 0.05 g/m 2 to 0.5 g/m 2 . The resulting material has an improved aptitude for reduction treatment which is obtained without increasing the amount of silver coated on the support. The coating layers formed are excellent with respect to transparency.
摘要翻译：公开了一种制备用于光机械加工的卤化银照相感光材料的方法。该方法包括将光敏卤化银乳剂层涂覆在载体上，然后在乳剂层上涂布不敏感的上层。上层由亲水胶体组成，并涂覆在乳剂层的上部。然后将复合溶液涂覆在不透光的上层上。该复合溶液由包含明胶溶液中的非扩散聚合物硬化剂的溶液组成，其量足以使由明胶溶液制成的层的熔融时间大于乳液层的熔融时间。复合溶液的涂布量使得明胶涂布量在0.05g / m 2至0.5g / m 2的范围内。所得到的材料具有改进的还原处理能力，其不会增加涂覆在载体上的银的量而获得。所形成的涂层在透明性方面是优异的。

108. 发明公开

EP0049799A3 Photomask blank and photomask 失效
标题翻译：光掩模空白和光掩模
公开(公告)号：EP0049799A3
公开(公告)日：1982-11-17
申请号：EP81107702
申请日：1981-09-28
申请人： DAI NIPPON INSATSU KABUSHIKI KAISHA
发明人： Kaneki, Satoru , Tabuchi, Kazuhiro
IPC分类号： G03F01/00
CPC分类号： G03F1/50 , G03F1/40
摘要： A photomask (B) is fabricated by forming, in a photomask (hard mask) produced by forming a patternized film (3a) of a masking material such as metallic chromium, a chromium oxide, a chromium nitride, metallic silicon, a silicon oxide or a mixture thereof on a transparent substrate (1), a metallic film (2) of a translucent and electroconductive material selected from Mo, Nb, Ta, Ti, V, W, Cr, Au and Zr between the masking film (3a) and the transparent substrate (1). At the time of pattern transferring by photolithography, dropping off of parts of the pattern of this photomask does not occur even when it includes isolated island-like parts, and, at the time of inspection by electron-beam exposure, the precision of inspection does not lower. The photomask, by further comprising a chemically resistant and translucent protective film (5) between the electroconductive film (2) and the masking film (3a), is free of destruction of the electroconductive film (2) during the repeated washing between the repeated use of the photomask.
摘要翻译：通过在通过形成掩模材料（例如金属铬，氧化铬，氮化铬，金属硅，氧化硅或氧化硅）形成图案化膜（3a）而制成的光掩模（硬掩模）中形成光掩模（B）（1）上的混合物，在掩蔽膜（3a）和掩模膜（3a）之间的选自Mo，Nb，Ta，Ti，V，W，Cr，Au和Zr的半透明导电材料的金属膜（2）透明基板（1）。在通过光刻法进行图案转印时，即使在包含孤立的岛状部分的情况下，也不会发生该光掩模的图案的一部分脱落，在利用电子束曝光进行检查时，检查精度不低。通过在导电膜（2）和掩蔽膜（3a）之间进一步包括耐化学品且半透明的保护膜（5），光掩模在重复清洗期间不会破坏导电膜（2）的光罩。

109. 发明公开

EP0057268A3 Method of fabricating X-ray lithographic masks 失效
标题翻译：制备X射线光刻掩模的方法
公开(公告)号：EP0057268A3
公开(公告)日：1982-11-10
申请号：EP81109153
申请日：1981-10-29
申请人： International Business Machines Corporation
发明人： Hofer, Donald Clifford
IPC分类号： G03F01/00
CPC分类号： G03F1/22
摘要： A method is disclosed for fabricating an improved x-ray mask which has a high aspect ratio and vertical side walls. First, a thin electrically conductive film (12) is deposited on top of an x-ray mask substrate (10). The conductive film will later act as an electroplating base but it is also sufficiently thin to be substantially x-ray transparent. A resist pattern (18) is then formed on top of the electroplating base film using an electron beam to expose the resist. The electron beam resist patternwise masks the electroplating base film during subsequent electroplating deposition of an x-ray absorbing layer (20) to form a first x-ray absorbing pattern. An x-ray sensitive resist (40) is then deposited on top of the first x-ray absorbing pattern and exposed to x-rays from the bottom. The first x-ray absorbing pattern thus patternwise shields the x-ray resist. The patternwise exposed x-ray resist is then developed to form an x-ray resist pattern (46). Finally, another layer (48) of x-ray absorbing material is deposited through the x-ray resist pattern by electroplating to form a second x-ray absorbing pattern. In the preferred embodiment, the x-ray resist is positive acting and the first and second x-ray absorbing patterns are complementary. After the second x-ray absorbing pattern is deposited in this embodiment, the first x-ray absorbing pattern is removed.
摘要翻译：公开了一种用于制造具有高纵横比和垂直侧壁的改进的x射线掩模的方法。首先，在x射线掩模基板（10）的顶部上沉积薄导电膜（12）。导电膜随后将用作电镀基底，但其也足够薄以使其基本上为x射线透明。然后使用电子束在电镀基底膜的顶部上形成抗蚀剂图案（18）以暴露抗蚀剂。在随后的x射线吸收层（20）的电镀沉积期间，电子束抗蚀剂以图形方式掩蔽电镀基膜，以形成第一x射线吸收图案。然后将x射线敏感抗蚀剂（40）沉积在第一x射线吸收图案的顶部上并从底部暴露于x射线。因此，第一x射线吸收图案图案地屏蔽x射线抗蚀剂。然后显影图案曝光的x射线抗蚀剂以形成x射线抗蚀剂图案（46）。最后，通过电镀将X射线吸收材料的另一层（48）穿过X射线抗蚀剂图案沉积以形成第二x射线吸收图案。在优选实施例中，x射线抗蚀剂是正作用的，并且第一和第二X射线吸收图案是互补的。在本实施例中沉积第二X射线吸收图案之后，去除第一X射线吸收图案。

110. 发明公开

EP0036548A3 Method of engraving printing surfaces 失效
标题翻译：雕刻表面的方法
公开(公告)号：EP0036548A3
公开(公告)日：1982-03-17
申请号：EP81101733
申请日：1981-03-10
申请人： DR.-ING. RUDOLF HELL GmbH
发明人： Sciarretta, Benito
IPC分类号： G03F01/00
CPC分类号： H04N1/40075 , B44B3/004

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