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101. 发明公开

EP0141434A3 Process for the correction of photo masks 失效
标题翻译：照相胶片校正方法
公开(公告)号：EP0141434A3
公开(公告)日：1985-07-24
申请号：EP84201179
申请日：1984-08-15
申请人： Philips Patentverwaltung GmbH , N.V. Philips' Gloeilampenfabrieken
发明人： Tietje, Hans-Gerhard
IPC分类号： G03F01/00
CPC分类号： G03F1/72

102. 发明公开

EP0104685A3 Mask for obtaining texturized patterns in resist layers using X-ray lithography, and method of manufacturing the same 失效
标题翻译：使用X-RAY LITHOGRAPHY获取耐蚀层的纹理图案的掩模及其制造方法
公开(公告)号：EP0104685A3
公开(公告)日：1985-07-03
申请号：EP83201242
申请日：1983-08-31
申请人： Philips Patentverwaltung GmbH , N.V. Philips' Gloeilampenfabrieken
发明人： Lentfer, Arno , Lüthje, Holger
IPC分类号： G03F01/00
CPC分类号： G03F1/22 , Y10S430/168

103. 发明公开

EP0103280A3 Fabrication method of membrane structure 失效
标题翻译：膜结构的制造方法
公开(公告)号：EP0103280A3
公开(公告)日：1985-06-19
申请号：EP83108897
申请日：1983-09-08
申请人： Nippon Telegraph and Telephone Public Corporation
发明人： Matsuo, Seitaro , Kiuchi, Mikiho , Sekimoto, Misao
IPC分类号： G03F01/00
CPC分类号： G03F1/22 , Y10S438/977
摘要： A thin film (2) which becomes a membrane is formed over one major surface of a substrate (1) by plasma deposition process utilizing microwave electron cyclotron resonance and then the substrate (1) is removed other than a portion (1A) of the substrate (1) which remains as a frame so as to form a membrane structure. A dense and high quality membrane can be formed at a low temperature and the internal stress of the membrane is controlled by varying the conditions under which the plasma deposition process is carried out and by heat treating the thin film (2) after its formation.

104. 发明公开

EP0130581A3 Enlargement of photopolymer images in photopolymer mask 失效
标题翻译：光致变色胶片中光刻胶图像的放大
公开(公告)号：EP0130581A3
公开(公告)日：1985-06-05
申请号：EP84107502
申请日：1984-06-28
申请人： E.I. DU PONT DE NEMOURS AND COMPANY
发明人： Quinn, John Anthony , O'Neill, James William
IPC分类号： G03F07/26 , G03F01/00
CPC分类号： G03F1/56 , G03F7/40
摘要： Process of enlarging image areas covered by a stencil or relief image area formed in a photopolymer mask consisting essentially of (a) contacting said image area with a swelling agent and optionally a diluent to effect enlargement, and (b) removing excess swelling agent, i.e., evaporation, air impingement including heating. Additional image enlargement is possible by further contacting the image with a more concentrated swelling agent. The process is particularly useful in enlarging halftone image dots of photopolymer litho masks wherein the halftone image areas consist of hardened upper skins which rest on softer undervolumes having a lesser degree of polymerization or hardening.

105. 发明公开

EP0083408A3 Methods and apparatus for testing lithographic masks using electron beam scanning 失效
标题翻译：使用电子束扫描测试光刻掩模的方法和装置
公开(公告)号：EP0083408A3
公开(公告)日：1984-04-18
申请号：EP82110210
申请日：1982-11-05
申请人： International Business Machines Corporation
发明人： Grobman, Warren David
IPC分类号： G03F01/00 , G01N21/88 , G01N23/227
CPC分类号： G03F1/86 , G01N23/18 , G01N23/203 , G03F1/40
摘要： In electron beam testing systems wherein high energy, 'high resolution electron beams 14 are used to test litho- tgraphic masks 16, a technique and apparatus is described for discharging electrons which are left on the surface of the mask. The materials used in these masks e.g. for substrate are such that induced photoconductivity and photoemissivity are extremely low and are incapable of providing sufficient eletron discharge. The electrons are discharged by using a thin, low work function (e.g. between 1 and 3eV) coating 20 which is applied over the entire mask surface, the coating 20 being transparent to the radiation which will later be incident upon the mask when it is used in a fabrication process. Due to induced photoemission in the thin coating layer, enough photoemitted electrons will be produced to balance the buildup of electrons from the electron beam, thereby discharging the surface of the mask. The electron beam is a high energy beam, having energies greater than about 5000 eV, and a resolution less than about 1 micrometer. Cesium telluride (CsTe) is a suitable coating material.

106. 发明公开

EP0055077A3 System for transferring a fine pattern onto a target 失效
标题翻译：将精细图案转移到目标的系统
公开(公告)号：EP0055077A3
公开(公告)日：1983-03-16
申请号：EP81305917
申请日：1981-12-17
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Takasu, Shinichiro , Shinozaki, Toshiaki
IPC分类号： G03F07/20 , G03F01/00
CPC分类号： G03F1/22 , G03F7/2039 , G03F7/70283 , G03F7/70316 , G03F7/7035 , H01L21/30
摘要： An X-ray system for transferring a fine pattern onto a target has a mask (12), on the surface (6) of which is formed an X-ray absorbing layer (17) in a predetermined pattern and which is made of a single crystal (2) of high regularity. Parallel mon- ochromic X-rays (4) become incident on the lattice plane (h, k, I) of the single crystal (2) at an angle O. Diffraction X-rays (8) emerging from the lattice plane (h, k, I) are projected onto the surface of a wafer (16) in the normal direction. An X-ray resist layer (18) is formed on the surface of the wafer (16). Since incident X-rays (4) and diffraction X-rays (8) are absorbed by the X-ray absorbing layer (17) on the mask (12), the pattern defined by the layer (17) is projected on the X-ray resist layer (18).

107. 发明公开

EP0052806A3 Dot-enlargement process for photopolymer litho masks 失效
标题翻译：光电子显微镜的扩散过程
公开(公告)号：EP0052806A3
公开(公告)日：1983-03-16
申请号：EP81109296
申请日：1981-10-29
申请人： E.I. DU PONT DE NEMOURS AND COMPANY
发明人： Heiart, Robert Bernard , O'Neil, James William
IPC分类号： G03F01/00 , G03F07/26 , G03C05/00 , G03F05/00
CPC分类号： G03F1/56 , G03F7/40 , G03F7/405
摘要： An imaged element containing a polymeric relief or stencil image, in which the polymer contains crosslinkable moieties, is subjected to an image enlargement process by contacting the image with a solution containing a swelling agent for the image, and a crosslinking agent. The process is particularly useful in enlarging the half-tone image dot area of photopolymer litho masks wherein the half-tone image areas consist of hardened upper skins which rest on softer undervolumes having a lesser degree of polymerization or hardening.

108. 发明公开

EP0066466A3 Photomask and method of testing it 失效
标题翻译：照片及其测试方法
公开(公告)号：EP0066466A3
公开(公告)日：1983-03-09
申请号：EP82302777
申请日：1982-05-28
申请人： FUJITSU LIMITED
发明人： Kobayashi, Kenichi
IPC分类号： G03F01/00
CPC分类号： G03F1/44 , G01N21/956 , G03F1/84 , H01L21/30
摘要： A photomask (1) for use in the manufacture of a semiconductor device comprises a pattern (P 1 , P 2 ) to be tested and for use in forming the semiconductor device and an additional synchronisation pattern (S 1 to S 8 ). The synchronisation pattern is used to obtain a synchronisation pulse (E 1 , E z , E s , E 6 ) during scanning of the photomask (1) for synchronising a scanning signal (S 9 ) obtained from the pattern (P 1 , P 2 ) to be tested with a reference signal (S 10 ) based on reference pattern data stored on a magnetic tape (7).

109. 发明公开

EP0054736A3 Photomask and photomask blank 失效
标题翻译：光掩模和光掩模空白
公开(公告)号：EP0054736A3
公开(公告)日：1982-11-17
申请号：EP81109440
申请日：1981-10-30
申请人： DAI NIPPON INSATSU KABUSHIKI KAISHA
发明人： Kaneki, Satoru , Kikuchi, Yuzi , Sasaki, Yoji
IPC分类号： G03F01/00
CPC分类号： G03F1/50 , G03F1/46
摘要： In a low reflection type photomask (hard mask) having a masking film (7) of a metal selected from chromium or tantalum provided, through or without an intermediary low reflection layer (8), on a transparent substrate (6) and further having a low reflection layer (8) provided on the metal film, use is made of a composite layer containing an oxide and nitride of a metal selected from chromium and tantalum as the low reflection layer (8). The composite layer (8) is substantially equal in etching speed to the metal masking film (7), and the photomask obtained is free from image deterioration caused by protrusions such as visors, burrs, or fractures, as observed in the photomask of the prior art using metal oxide films as low reflection layers, and also has excellent durability.
摘要翻译：在具有从铬或钽中选择的金属的掩模膜（7）的低反射型光掩模（硬掩模）中，所述掩模膜（7）通过或不通过中间低反射层（8）提供在透明基板（6）上，并且还具有设置在金属膜上的低反射层（8），使用含有选自铬和钽中的金属的氧化物和氮化物作为低反射层（8）的复合层。复合层（8）的蚀刻速度与金属掩膜（7）的蚀刻速度基本相同，并且所获得的光掩模没有由在先技术的光掩模中观察到的诸如遮光板，毛刺或裂缝之类的突起引起的图像劣化使用金属氧化物膜作为低反射层的技术，并且还具有优异的耐久性。

110. 发明公开

EP0024902A3 Apparatus and method for converting one-bit image data into gray scale image data 失效
标题翻译：将一位图像数据转换为灰度图像数据的装置和方法
公开(公告)号：EP0024902A3
公开(公告)日：1981-12-02
申请号：EP80302925
申请日：1980-08-22
申请人： XEROX CORPORATION
发明人： Liao, Henry H
IPC分类号： G06F15/20 , G03F01/00
CPC分类号： H04N1/4092 , G06T5/009 , H04N1/40075
摘要： A method and apparatus for rescreening a halftone image to produce an edge-enhanced halftone copy from a halftone original. The halftone original is scanned by a raster input scanner and the resultant analog voltage thresholded to produce a one bit per pixel bit stream. A six bit per pixel gray scale output is produced therefrom by adding an integrated value and an edge ehancement value for each input pixel received. The integrated value is calculated by summing the number of one bits in the seven by nine bit section surrounding each pixel. The edge enhancement value is calculated by determining the difference between the number of one bits in the right and left halves, and upper and lower halves, of the six by seven bit section surrounding each pixel. A set of equations is used to process these differences to produce an edge enhancement value which is added to the integrated value. From this six bit per pixel gray scale output the six bit output can be preserved, or a halftone copy can be produced by any well-known process. A simple and inexpensive circuit to perform the above functions at high data rates is also disclosed.

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