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1. 发明授权

EP0054736B1 Photomask and photomask blank 失效
标题翻译：光掩模和光掩模空白
公开(公告)号：EP0054736B1
公开(公告)日：1985-05-22
申请号：EP81109440.8
申请日：1981-10-30
申请人： DAI NIPPON INSATSU KABUSHIKI KAISHA
发明人： Kaneki, Satoru , Kikuchi, Yuzi , Sasaki, Yoji
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G03F1/46

2. 发明公开

EP0054736A3 Photomask and photomask blank 失效
标题翻译：光掩模和光掩模空白
公开(公告)号：EP0054736A3
公开(公告)日：1982-11-17
申请号：EP81109440
申请日：1981-10-30
申请人： DAI NIPPON INSATSU KABUSHIKI KAISHA
发明人： Kaneki, Satoru , Kikuchi, Yuzi , Sasaki, Yoji
IPC分类号： G03F01/00
CPC分类号： G03F1/50 , G03F1/46
摘要： In a low reflection type photomask (hard mask) having a masking film (7) of a metal selected from chromium or tantalum provided, through or without an intermediary low reflection layer (8), on a transparent substrate (6) and further having a low reflection layer (8) provided on the metal film, use is made of a composite layer containing an oxide and nitride of a metal selected from chromium and tantalum as the low reflection layer (8). The composite layer (8) is substantially equal in etching speed to the metal masking film (7), and the photomask obtained is free from image deterioration caused by protrusions such as visors, burrs, or fractures, as observed in the photomask of the prior art using metal oxide films as low reflection layers, and also has excellent durability.
摘要翻译：在具有从铬或钽中选择的金属的掩模膜（7）的低反射型光掩模（硬掩模）中，所述掩模膜（7）通过或不通过中间低反射层（8）提供在透明基板（6）上，并且还具有设置在金属膜上的低反射层（8），使用含有选自铬和钽中的金属的氧化物和氮化物作为低反射层（8）的复合层。复合层（8）的蚀刻速度与金属掩膜（7）的蚀刻速度基本相同，并且所获得的光掩模没有由在先技术的光掩模中观察到的诸如遮光板，毛刺或裂缝之类的突起引起的图像劣化使用金属氧化物膜作为低反射层的技术，并且还具有优异的耐久性。

3. 发明公开

EP0054736A2 Photomask and photomask blank 失效
标题翻译： Photomaske und Plattedafür。
公开(公告)号：EP0054736A2
公开(公告)日：1982-06-30
申请号：EP81109440.8
申请日：1981-10-30
申请人： DAI NIPPON INSATSU KABUSHIKI KAISHA
发明人： Kaneki, Satoru , Kikuchi, Yuzi , Sasaki, Yoji
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G03F1/46
摘要： In a low reflection type photomask (hard mask) having a masking film (7) of a metal selected from chromium or tantalum provided, through or without an intermediary low reflection layer (8), on a transparent substrate (6) and further having a low reflection layer (8) provided on the metal film, use is made of a composite layer containing an oxide and nitride of a metal selected from chromium and tantalum as the low reflection layer (8). The composite layer (8) is substantially equal in etching speed to the metal masking film (7), and the photomask obtained is free from image deterioration caused by protrusions such as visors, burrs, or fractures, as observed in the photomask of the prior art using metal oxide films as low reflection layers, and also has excellent durability.
摘要翻译：在具有通过或不具有中间低反射层（8）的非铬或钽提供的金属的掩模膜（7）的低反射型光掩模（硬掩模）中，在透明基板（6）上还具有设置在金属膜上的低反射层（8），使用含有选自铬和钽的金属的氧化物和氮化物的复合层作为低反射层（5）。复合层（8）的蚀刻速度与金属掩模膜（7）的蚀刻速度基本相同，所得到的光掩模没有由诸如遮阳板，毛刺或断裂的突起引起的图像劣化，如在先前的光掩模使用金属氧化物膜作为低反射层，并且还具有优异的耐久性。

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