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    • 4. 发明申请
    • PHOTOMECHANICAL PROCESSING MACHINE
    • 光电加工机
    • WO1979000507A1
    • 1979-08-09
    • PCT/JP1979000007
    • 1979-01-13
    • YAMATOYASHOKAI KKNUMAKURA TOKAMOTO KMOERITZ P
    • YAMATOYASHOKAI KK
    • G03F01/00
    • H04N1/6027
    • A highly developed photomechanical processing machine including, an input mechanism (5) for information indicative of density, gradation and tone The information is obtained from a collecting mechanism (4) for gray scales and color batches simultaneously exposed together with ordinary color photographic images. The processing machine further includes a mechanism (6) which stores input information indicative of density, gradation and tone of a standard color photograph, a mechanism (8) which stores input information indicative of a desired density, gradation and tone, an adjusting mechanism (7, 9) for adjusting the density, gradation and tone of ordinary images based on the difference between random points in the information from mechanism (5), (6) or (8) when the information indicative of the density and tone of the ordinary image is entered into the respective mechanisms whereby the desired gradation and tone of the image of a halftone dot are obtained.
    • 一种高度发展的光机械处理机,包括用于指示密度,灰度和色调的信息的输入机构(5)。从与普通彩色摄影图像同时曝光的灰度级和色彩批次的收集机构(4)获得信息。 处理机还包括存储指示标准彩色照片的浓度,灰度和色调的输入信息的机构(6),存储表示所需密度,灰度和色调的输入信息的机构(8),调节机构 根据来自机构(5),(6)或(8)的信息中的随机点之间的差异,调整普通图像的浓度,灰度和色调时,当表示普通图像的浓度和色调的信息时 图像被输入到相应的机构中,从而获得半色调点的图像的期望灰度和色调。
    • 6. 发明申请
    • PROCESS AND DEVICE FOR PREPARATION OF EXPOSED TYPESETTING FILMS FOR PHOTOTYPESETTING
    • 方法和设备曝光的胶片一套LIGHT一整套的生产
    • WO1997042547A1
    • 1997-11-13
    • PCT/EP1996001806
    • 1996-05-02
    • WINDI WINDERLICH GMBHCOSTARD, Herbert
    • WINDI WINDERLICH GMBH
    • G03F01/00
    • G03F1/68
    • The invention relates to a process and a device for preparing exposed typesetting films for phototypesetting. In said process, a typesetting film which has a transparent plastic base sheet and at least one surface layer applied thereto is scanned with a laser beam and exposed with respect to picture elements while being guided by the typesetting information. To prepare a typesetting films in a simple and economical manner, it is proposed to use a typesetting film with a carbon black and/or graphite-containing surface layer on the transparent plastic base sheet, and to burn away with the laser beam the surface layer at picture elements to be exposed. Consequently, only the transparent plastic base sheet remains in the exposed areas.
    • 本发明涉及一种用于生产用于光组设定曝光的胶片的方法和装置。 在这样的过程中,一组的膜,其具有在透明塑料基膜和至少一个涂覆的涂布层进行扫描的激光束,并通过暴露该组信息成像控制。 为了使一个简单和廉价的生产一套薄膜,建议使用具有在透明塑料基膜上的煤烟和/或含石墨的层的一组膜和燃烧掉覆盖层由激光束要曝光的像素,以使得在曝光区域仅 在透明塑料基膜残留。
    • 7. 发明申请
    • SYSTEMS AND METHODS FOR DEPOSITION OF DIELECTRIC FILMS
    • 用于沉积介质膜的系统和方法
    • WO1997038355A1
    • 1997-10-16
    • PCT/US1997005742
    • 1997-04-07
    • MICRION CORPORATION
    • MICRION CORPORATIONCASEY, J., David, Jr.STEWART, Diane, K.SUNDARAM, GaneshDOYLE, Andrew, F.
    • G03F01/00
    • G03F1/72G03F1/26H01L21/02164H01L21/02216H01L21/31608
    • The present invention provides systems and methods for the water-based deposition of silicon dioxide films. In one aspect, the invention provides methods for depositing a dielectric material to the surface of a workpiece. The workpiece can be, for example, an integrated circuit, a phase shift mask, or any other device that has features suitable for processing by a focused ion beam system. The method for depositing the dielectric material includes the steps of providing a chamber that has an interior portion with a stage element for holding the workpiece and that also includes an injection element for introducing reactant material into that interior portion, introducing through the injection elements a silicon-containing reactant material, introducing through the injection element a water-containing reactant material, and passing an ion beam through the interior portion and to the surface of the workpiece for depositing the dielectric material thereon. The process of the invention is suitable for focused ion beam induced deposition of a silicon dioxide film on top of an integrated circuit for forming an insulated layer or for depositing a silicon dioxide film on a phase shift mask for repairing a defect in the mask such as a bump or a void.
    • 本发明提供了用于二氧化硅膜的水基沉积的系统和方法。 一方面,本发明提供了将电介质材料沉积到工件的表面上的方法。 工件可以是例如集成电路,相移掩模或具有适合于聚焦离子束系统处理的特征的任何其它器件。 沉积电介质材料的方法包括以下步骤:提供具有内部部分的室,其具有用于保持工件的载物台元件,并且还包括用于将反应物材料引入该内部部分的注入元件,通过注入元件引入硅 通过注射元件引入含水反应物质,并使离子束通过内部部分和工件表面,以沉积其上的电介质材料。 本发明的方法适用于在用于形成绝缘层的集成电路的顶部上的聚焦离子束感应沉积二氧化硅膜或用于在相位掩模上沉积二氧化硅膜以修复掩模中的缺陷,例如 一个碰撞或一个空白。