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    • 5. 发明申请
    • METHOD OF PRODUCING A SCREENED PICTURE
    • 制作筛选图片的方法
    • WO1997041487A1
    • 1997-11-06
    • PCT/SE1997000717
    • 1997-04-29
    • JEMSEBY, Bo
    • G03F05/00
    • G03F5/22G03F5/12G03F5/14
    • The present invention relates to a method of producing with the aid of exposure a screened image of a picture (2) on the light-sensitive layer (6a) of film (6), plate, etc. The characterizing feature of the invention is that it incorporates utilization of at least one stochastic screen (5). This is located before the said film (6), plate, etc., on which the said screened image is intended to be created. The toner (5a) of the stochastic screen (5) is located in direct contact with the light-sensitive layer (6a) of the said film (6), plate, etc.
    • 本发明涉及一种借助于在胶片(6),印版等的感光层(6a)上曝光图像(2)的筛选图像来制造方法。本发明的特征在于: 它集成了利用至少一个随机屏幕(5)。 它位于所述胶片(6),板等之前,其上将要创建所述被筛选的图像。 随机筛网(5)的调色剂(5a)与所述薄膜(6),印版等的感光层(6a)直接接触。
    • 7. 发明申请
    • PROCESS FOR DRY FLEXOGRAPHIC AND OFFSET PRINTING
    • 干式打印和偏移打印的过程
    • WO1998006006A1
    • 1998-02-12
    • PCT/IT1997000166
    • 1997-07-11
    • FERRI, Enzo
    • G03F05/00
    • B41C3/00G03F5/00
    • The invention falls within the sector of printing processes and uses a random half-tone screen system for producing the printing matrix for dry offset and flexographic printing. The process comprises the following steps for producing the printing matrix: digital acquisition, by means of scanning, of the image to be printed; modification of the colour curves; use of a random half-tone screen; printing of a positive film by means of a developer; production of a negative film using a half-tone screen in which the size of the individual dots is smaller than in the positive film; use of the negative film for producing the printing matrix.
    • 本发明属于印刷工艺领域,并且使用随机半色调屏幕系统来制造用于干胶印和柔版印刷的印刷基质。 该过程包括以下产生打印矩阵的步骤:通过扫描数字获取要打印的图像; 修改颜色曲线; 使用随机半色调屏幕; 通过显影剂印刷正片; 使用其中各个点的尺寸小于正片的半色调屏幕的负片的制造; 使用负片制作印刷基质。
    • 8. 发明申请
    • MICROSTRUCTURES AND METHODS FOR MANUFACTURING MICROSTRUCTURES
    • 用于制造微结构的微结构和方法
    • WO1996007954A1
    • 1996-03-14
    • PCT/US1994010164
    • 1994-09-09
    • BOARD OF SUPERVISORS OF LOUISIANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGEVLADIMIRSKY, YuliVLADIMIRSKY, OlgaSAILE, Volker
    • BOARD OF SUPERVISORS OF LOUISIANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE
    • G03F05/00
    • G03F7/00G03F7/0017G03F7/094G03F7/095G03F7/11Y10S430/143Y10S430/167Y10S430/168
    • A method is disclosed for the manufacture of microstructures and devices. The method is relatively easy to implement, and has the capability to produce features having a resolution of ten microns or smaller with a high aspect ratio (60, 75, 100, 200, or even higher). A master mask, appropriately designed and fabricated, is used in an initial exposure step with visible light, ultraviolet light, x-rays, an electron beam, or an ion beam to make a "transfer mask" directly on the surface of the sample. It is not necessary to produce an expensive x-ray master mask, even if x-ray exposure of the sample is desired. There is no necessity for gap control during exposure of the resist through the transfer mask. The resulting structures may, if desired, have a higher aspect ratio than microstructures that have previously been produced through other methods. The "transfer mask" is not a unit separate from the sample, but is formed directly on the surface of each sample. A conventional-type master mask is used to form the "transfer mask" with visible light, ultraviolet light, x-rays, an electron beam, or an ion beam. The total cost is determined primarily by the cost of the master mask. Because the master mask can be a conventional-type optical mask, the high cost of producing a conventional x-ray mask can be avoided. The "master mask" is used to form a "transfer mask" on each sample individually. The patterned transfer mask comprises a thin layer of an absorber of the radiation to be used in the final exposure. For example, if the final exposure is to be performed with soft x-rays, the transfer mask may be formed from an x-ray absorber such as a patterned layer of gold. The transfer mask is then used in one or more separate exposures of the underlying resist. An analogous method may be used for radiation-assisted chemistry, such as etching or deposition, on the surface of a sample.
    • 公开了用于制造微结构和装置的方法。 该方法相对容易实现,并且具有以高纵横比(60,75,100,200或甚至更高)产生分辨率为10微米或更小的特征的能力。 在具有可见光,紫外光,X射线,电子束或离子束的初始曝光步骤中使用适当设计和制造的主掩模,以在样品的表面上直接形成“转印掩模”。 即使需要X射线曝光,也不需要生产昂贵的x射线母版掩模。 通过转印掩模曝光抗蚀剂时不需要间隙控制。 如果需要,所得到的结构可以具有比先前通过其它方法产生的微结构更高的纵横比。 “转印掩模”不是与样品分开的单元,而是直接形成在每个样品的表面上。 使用常规型的主掩模来形成具有可见光,紫外光,x射线,电子束或离子束的“转印掩模”。 总成本主要由主掩模的成本决定。 由于主掩模可以是常规型光掩模,因此可以避免生产常规x射线掩模的高成本。 “主掩模”用于在每个样品上单独形成“转印掩模”。 图案化的转印掩模包括用于最终曝光的辐射的吸收体的薄层。 例如,如果要用软X射线进行最终曝光,则传输掩模可以由诸如图案化的金的x射线吸收体形成。 然后将转印掩模用于下面的抗蚀剂的一个或多个单独的曝光中。 类似的方法可以用于放射辅助化学,例如蚀刻或沉积在样品的表面上。