发明公开
EP0104685A3 Mask for obtaining texturized patterns in resist layers using X-ray lithography, and method of manufacturing the same
失效

基本信息:
- 专利标题: Mask for obtaining texturized patterns in resist layers using X-ray lithography, and method of manufacturing the same
- 专利标题(中):使用X-RAY LITHOGRAPHY获取耐蚀层的纹理图案的掩模及其制造方法
- 申请号:EP83201242 申请日:1983-08-31
- 公开(公告)号:EP0104685A3 公开(公告)日:1985-07-03
- 发明人: Lentfer, Arno , Lüthje, Holger
- 申请人: Philips Patentverwaltung GmbH , N.V. Philips' Gloeilampenfabrieken
- 专利权人: Philips Patentverwaltung GmbH,N.V. Philips' Gloeilampenfabrieken
- 当前专利权人: Philips Patentverwaltung GmbH,N.V. Philips' Gloeilampenfabrieken
- 优先权: DE3232499 19820901
- 主分类号: G03F01/00
- IPC分类号: G03F01/00