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101. 发明申请

US20100085791A1 DRIVER UNIT 失效
标题翻译：驱动单元
公开(公告)号：US20100085791A1
公开(公告)日：2010-04-08
申请号：US12593196
申请日：2007-03-30
申请人： Jun Suzuki
发明人： Jun Suzuki
IPC分类号： G11C5/00
CPC分类号： G11B9/1436 , B82Y10/00 , G11B9/02
摘要： A driving apparatus (100c) is provided with: a base portion (110); a stage portion (130) on which a driven object (12) is mounted and which can be displaced; an elastic portion (120) which connects the base portion and the stage portion and which has elasticity to displace the stage portion in one direction (Y axis); and a first applying device (161, 162, 22) for applying, to the base portion, an excitation force for displacing the stage portion such that the stage portion is resonated in the one direction at a resonance frequency determined by the stage portion and the elastic portion.
摘要翻译：驱动装置（100c）具有：基部（110）; 其中安装有被驱动物体（12）并能够移动的台部部分（130）弹性部（120），其连接所述基部和所述台部，并且具有弹性以使所述台部沿一个方向（Y轴）移位; 以及第一施加装置（161,162,22），用于向所述基部施加用于使所述载物台部分移位的激励力，使得所述载物台部分在所述一个方向上以由所述载物台部分确定的共振频率共振，弹性部分。

102. 发明申请

US20100072563A1 SUBSTRATE BONDED MEMS SENSOR 有权
标题翻译：基板结合MEMS传感器
公开(公告)号：US20100072563A1
公开(公告)日：2010-03-25
申请号：US12560645
申请日：2009-09-16
申请人： Kiyoshi Sato , Kiyoshi Kobayashi , Yoshitaka Uto , Katsuya Kikuiri , Kazuyoshi Takahashi , Jun Suzuki , Hideki Gochou , Toru Takahashi , Hisanobu Ohkawa
发明人： Kiyoshi Sato , Kiyoshi Kobayashi , Yoshitaka Uto , Katsuya Kikuiri , Kazuyoshi Takahashi , Jun Suzuki , Hideki Gochou , Toru Takahashi , Hisanobu Ohkawa
IPC分类号： H01L29/84
CPC分类号： B81B7/007 , B81B2207/097
摘要： A MEMS sensor includes a first substrate; a second substrate; a movable electrode portion and a fixed electrode portion which are arranged between the first substrate and the second substrate, wherein: conductive supporting portions of the movable electrode portion and the fixed electrode portion are, respectively, fixedly secured to a surface of the first substrate via a first insulating layer; a second insulating layer, a lead layer buried into the second insulating layer, and connection electrode portions that are electrically connected to the lead layer to be individually connected to the conductive supporting portions are provided on a surface of the second substrate; a metallic connection layer is formed on the surface of one of the respective conductive supporting portions; one of the respective connection electrode portions and the metallic connection layer are bonded together by eutectic bonding or diffusion bonding; and, at least each of the connection electrode portions has a thickness of about 4 μm or smaller.
摘要翻译： MEMS传感器包括第一基板; 第二基板; 布置在所述第一基板和所述第二基板之间的可移动电极部分和固定电极部分，其中：所述可动电极部分和所述固定电极部分的导电支撑部分分别固定地固定到所述第一基板的表面，第一绝缘层; 第二绝缘层，埋入第二绝缘层中的引线层和与导电层电连接以连接到导电支撑部分的连接电极部分设置在第二基板的表面上; 在各个导电支撑部分之一的表面上形成金属连接层; 各个连接电极部分和金属连接层中的一个通过共晶接合或扩散接合结合在一起; 并且至少每个连接电极部分具有约4μm或更小的厚度。

103. 发明授权

US07644650B2 Water heater and coffee maker for aircraft 有权
标题翻译：热水器和飞机咖啡机
公开(公告)号：US07644650B2
公开(公告)日：2010-01-12
申请号：US11405624
申请日：2006-04-18
申请人： Jun Suzuki
发明人： Jun Suzuki
IPC分类号： A47J31/00
CPC分类号： A47J31/005 , A47J31/46 , B64D11/04
摘要： The invention provides an improved water heater and coffee maker for use in an aircraft. A water heater 1 of an aircraft has a water tank 20 to which water from a water tank 10 of the aircraft is fed via a solenoid valve 14 and a flowmeter 16. The water tank 20 is opened to the atmosphere, and it does not form a pressure vessel. The hot water heated by a rapid heating boiler 40 is sent to a coffee server 100, and sprinkled via a hot water shower head 170 into a coffee brewing cup 180. The brewed coffee is pooled in a coffee server 200. An electrostatic level sensor 260 senses the liquid surface level of the coffee, based on which power supply to the boiler is turned off and supply of hot water is stopped.
摘要翻译：本发明提供一种用于飞机的改进的热水器和咖啡机。飞机的热水器1具有水箱20，来自飞机的水箱10的水通过电磁阀14和流量计16供给到水箱20中。水箱20向大气敞开，并且不形成压力容器由快速加热锅炉40加热的热水被送到咖啡服务器100，并通过热水淋浴喷头170喷洒到咖啡冲泡杯180中。将煮过的咖啡汇集在咖啡服务器200中。静电电平传感器260 感测咖啡的液体表面水平，基于哪个锅炉的电力被关闭并且停止供应热水。

104. 发明申请

US20090268534A1 SEMICONDUCTOR MEMORY DEVICE AND TEST METHOD THEREOF 有权
标题翻译：半导体存储器件及其测试方法
公开(公告)号：US20090268534A1
公开(公告)日：2009-10-29
申请号：US12426624
申请日：2009-04-20
申请人： Shuichi Kubouchi , Jun Suzuki
发明人： Shuichi Kubouchi , Jun Suzuki
IPC分类号： G11C29/00 , G11C7/06 , G11C7/00
CPC分类号： G11C29/38 , G11C7/08 , G11C11/401 , G11C11/4091 , G11C29/025 , G11C2029/1204
摘要： A semiconductor memory device comprises a memory cell array having memory cells arranged at intersections of word lines and bit lines, a first sense amplifier connected to a bit line at a predetermined position of the bit lines, a second sense amplifier connected to a bit line adjacent to the bit line at the predetermined position, a supplying circuit for supplying a predetermined voltage to each bit line connected to the first or second sense amplifier, and a sense amplifier control circuit capable of controlling the first and second sense amplifiers independently. In the semiconductor memory device, the sense amplifier control circuit performs a control in which an operation of either of the first and second sense amplifiers is stopped, the predetermined voltage is supplied to the bit line connected to the stopped sense amplifier, and the other of the first and second sense amplifiers is operated.
摘要翻译：半导体存储器件包括存储单元阵列，存储单元布置在字线和位线的交点处，第一读出放大器连接到位线的预定位置处的位线，第二读出放大器连接到相邻的位线到预定位置处的位线，用于向连接到第一或第二读出放大器的每个位线提供预定电压的提供电路和能够独立地控制第一和第二读出放大器的读出放大器控制电路。在半导体存储器件中，读出放大器控制电路执行其中停止第一和第二读出放大器之一的操作的控制，将预定电压提供给连接到停止的读出放大器的位线，另一个第一和第二读出放大器被操作。

105. 发明申请

US20090211667A1 SURFACE TREATMENT METHOD OF TITANIUM MATERIAL FOR ELECTRODES 审中-公开
标题翻译：电极材料表面处理方法
公开(公告)号：US20090211667A1
公开(公告)日：2009-08-27
申请号：US12325478
申请日：2008-12-01
申请人： Jun Suzuki , Toshiki Sato , Jun Hisamoto , Yoshinori Ito , Shinichi Tanifuji , Takashi Yashiki
发明人： Jun Suzuki , Toshiki Sato , Jun Hisamoto , Yoshinori Ito , Shinichi Tanifuji , Takashi Yashiki
IPC分类号： C23C8/10 , C21D9/00
CPC分类号： H01M8/0228 , H01M8/0206 , H01M8/0215
摘要： Disclosed herein is a surface treatment method of a titanium material for electrodes characterized by including: a titanium oxide layer formation step S1 of forming a titanium oxide layer with a thickness of 10 nm or more and 80 nm or less on the surface of a titanium material including pure titanium or a titanium alloy; a noble metal layer formation step S2 of forming a noble metal layer with a thickness of 2 nm or more including at least one noble metal selected from Au, Pt, and Pd on the titanium oxide layer by a PVD method; and a heat treatment step S3 of heat treating the titanium material having the noble metal layer formed thereon at a temperature of 300° C. or more and 800° C. or less.
摘要翻译：本发明公开了一种用于电极的钛材料的表面处理方法，其特征在于包括：在钛材料的表面上形成厚度为10nm以上且80nm以下的氧化钛层的氧化钛层形成工序S1 包括纯钛或钛合金; 通过PVD法在氧化钛层上形成厚度为2nm以上的含有选自Au，Pt，Pd中的至少一种贵金属的贵金属层的贵金属层形成工序S2; 以及在300℃以上且800℃以下的温度下对形成有贵金属层的钛材进行热处理的热处理工序S3。

106. 发明授权

US07468528B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07468528B2
公开(公告)日：2008-12-23
申请号：US11329589
申请日：2006-01-10
申请人： Jun Suzuki , Masato Doi , Hiroyuki Okuyama , Goshi Biwa
发明人： Jun Suzuki , Masato Doi , Hiroyuki Okuyama , Goshi Biwa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , Y10S257/918
摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.
摘要翻译：提供了一种半导体发光器件。半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。

107. 发明申请

US20080144346A1 SEMICONDUCTOR MEMORY DEVICE HAVING PLURAL MEMORY CELL ARRAYS 有权
标题翻译：具有多个存储器单元阵列的半导体存储器件
公开(公告)号：US20080144346A1
公开(公告)日：2008-06-19
申请号：US11956448
申请日：2007-12-14
申请人： Chiaki Dono , Yasuji Koshikawa , Jun Suzuki
发明人： Chiaki Dono , Yasuji Koshikawa , Jun Suzuki
IPC分类号： G11C5/02
CPC分类号： G11C5/02 , G11C5/06
摘要： A semiconductor memory device includes first and second bus regions, a third bus region laid out along a center line, a first cell region laid out between a first side and the first bus region, a second cell region laid out between a second side and the second bus region, third and fourth cell regions laid out between the first and second bus regions and laid out toward a third side and a fourth side respectively seen from the third bus region, and a data input/output pad string laid out along the third bus region.
摘要翻译：半导体存储器件包括第一和第二总线区域，沿着中心线布置的第三总线区域，布置在第一侧面与第一总线区域之间的第一单元区域，布置在第二侧面与第二区域之间的第二单元区域，第二总线区域，第三和第四单元区域，布置在第一和第二总线区域之间并且分别朝向从第三总线区域看到的第三侧面和第四侧面布置，以及沿着第三总线区域布置的数据输入/输出焊盘串巴士区。

108. 发明申请

US20080115235A1 Drugs For Diseases Accompanying Changes In Total Bile Acid Pool Or Lipid Metabolism Disorders And Method Of Screening These Drugs 审中-公开
标题翻译：总胆汁酸或脂质代谢紊乱伴随病变的药物及筛选这些药物的方法
公开(公告)号：US20080115235A1
公开(公告)日：2008-05-15
申请号：US11793044
申请日：2005-12-26
申请人： Takaharu Maruyama , Kenich Tanaka , Yoshitaka Tamai , Jun Suzuki
发明人： Takaharu Maruyama , Kenich Tanaka , Yoshitaka Tamai , Jun Suzuki
IPC分类号： A01K67/027 , G01N33/92
CPC分类号： A61K31/7008 , A01K67/0276 , A01K2217/075 , A01K2227/105 , A01K2267/03 , C07K14/723 , C12N15/1086 , G01N33/5038 , G01N33/5088 , G01N33/92 , G01N2500/00 , G01N2800/044 , G01N2800/08
摘要： A Gpbar1-deficient mouse is constructed and it is examined whether or not Gpbar1 participates in the regulation of bile acid homeostasis and lipid metabolism. As a result, the total bile acid pool is decreased in the Gpbar1-deficient mouse without showing any change in the fecal bile acid level. A female Gpbar1-deficient mouse having been fed with a high fat feed shows a significant increase in body weight compared with a wild type mouse, which is caused by an increase in fat. These facts suggest that Gpbar1 contributes to the regulation of bile acid homeostasis and lipid metabolism.
摘要翻译：构建Gpbar1缺陷小鼠，并检查Gpbar1是否参与胆汁酸稳态和脂质代谢的调节。结果，Gpbar1缺陷型小鼠的总胆汁酸池减少，粪便胆汁酸水平没有变化。已经喂养高脂肪饲料的雌性Gpbar1缺陷小鼠与野生型小鼠相比显着增加体重，这是由脂肪增加引起的。这些事实表明，Gpbar1有助于胆汁酸稳态和脂质代谢的调节。

109. 发明申请

US20080017954A1 Semiconductor device and semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20080017954A1
公开(公告)日：2008-01-24
申请号：US11826087
申请日：2007-07-12
申请人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
发明人： Jun Suzuki , Kenji Yoneda , Seiji Matsuyama
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L21/02181 , H01L21/022 , H01L21/0223 , H01L21/02252 , H01L21/0228 , H01L21/3141 , H01L21/31645 , H01L28/40
摘要： A capacitor insulating film composed of a layered film of first- to third-layer hafnium oxide films is formed on a lower electrode of a capacitor. The first- and third-layer hafnium oxide films have a composition ratio of oxygen to hafnium higher than the second-layer hafnium oxide film. Thus, the capacitor insulating film is composed of the first- and third-layer hafnium oxide films having greater barrier height and the second-layer hafnium oxide film having a higher dielectric constant, thereby attaining a capacitor having less leakage current and large capacity.
摘要翻译：在电容器的下电极上形成由第一至第三层氧化铪膜的层叠膜构成的电容绝缘膜。第一层和第三层氧化铪膜的氧与铪的组成比高于第二层氧化铪膜。因此，电容器绝缘膜由具有较高势垒高度的第一和第三层氧化铪膜和具有较高介电常数的第二层氧化铪膜组成，从而获得具有较小漏电流和大容量的电容器。

110. 发明授权

US07320317B2 Auxiliary device for engine spark plug ignition 失效
标题翻译：发动机火花塞点火辅助装置
公开(公告)号：US07320317B2
公开(公告)日：2008-01-22
申请号：US11415900
申请日：2006-05-02
申请人： Jun Suzuki
发明人： Jun Suzuki
IPC分类号： F02P15/00
CPC分类号： F02P3/0407 , F02D2400/11 , F02P3/0442 , F02P9/00 , F02P13/00
摘要： An auxiliary device for sparkplug ignition is provided having a case, and provided therein, electrolytic capacitors connected in parallel between ground terminals and positive terminals of the primary coils of the ignition coils, which are connected to sparkplugs in a direct ignition system. Diodes, which are connected in parallel, are provided in the reverse direction, between the ground terminals and the positive terminals on the primary coils. The case is fitted with a connector that connects to a dedicated harness. The back electromotive force generated in the primary side coils L1 to L4 of the ignition coils of each sparkplug is absorbed, so as to adjust the primary side current, allowing for generation of stabilized high voltage on the secondary coil side, and producing highly efficient sparkplug ignition.
摘要翻译：一种用于火花塞点火的辅助装置设置有壳体，其中设置有并联连接在点火线圈的初级线圈的接地端子和正端子之间的电解电容器，其连接到直接点火系统中的火花塞。并联连接的二极管以相反方向设置在接地端子与初级线圈的正极端子之间。该外壳配有连接到专用线束的连接器。在每个火花塞的点火线圈的初级侧线圈L 1至L 4中产生的反电动势被吸收，以便调节初级侧电流，从而允许在次级线圈侧产生稳定的高电压，并且高度生产高效的火花塞点火。

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