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1. 发明申请

US20130327642A1 ARC EVAPORATION SOURCE 审中-公开
标题翻译：弧蒸发源
公开(公告)号：US20130327642A1
公开(公告)日：2013-12-12
申请号：US14001315
申请日：2012-02-23
申请人： Shinichi Tanifuji , Kenji Yamamoto
发明人： Shinichi Tanifuji , Kenji Yamamoto
IPC分类号： C23C14/24
CPC分类号： C23C14/24 , C23C14/325 , H01J37/32055 , H01J37/32669 , H01J37/34 , H01J37/3402 , H01J37/345 , H01J37/3452
摘要： An arc evaporation source (101) according to one embodiment of the present invention comprises: a ring-shaped circumferential magnet (103) which is so arranged as to surround the outer circumference of a target (102) along a direction in which the direction of magnetization becomes parallel with the front surface of the target; and a rear surface magnet (104) which is arranged on the rear surface side of the target (102) along a direction in which the direction of magnetization becomes perpendicular to the front surface of the target. The magnetic pole of the circumferential magnet (103) on the inner side in the radial direction and the magnetic pole of the rear surface magnet (104) on the target (102) side have the same polarity as each other.
摘要翻译：根据本发明的一个实施例的电弧蒸发源（101）包括：环形圆周磁体（103），其被布置成沿着方向的方向围绕靶（102）的外周，磁化变得与目标的前表面平行; 以及沿着磁化方向垂直于靶的前表面的方向设置在靶（102）的后表面侧的后表面磁体（104）。在径向内侧的周向磁体（103）的磁极和靶（102）侧的后表面磁体（104）的磁极具有相同的极性。

2. 发明授权

US08399100B2 Reflection film, reflection film laminate, LED, organic EL display, and organic EL illuminating instrument 有权
标题翻译：反射膜，反射膜层压板，LED，有机EL显示器和有机EL照明仪器
公开(公告)号：US08399100B2
公开(公告)日：2013-03-19
申请号：US12679633
申请日：2008-09-25
申请人： Jun Suzuki , Toshiki Sato , Takayuki Tsubota , Shinichi Tanifuji
发明人： Jun Suzuki , Toshiki Sato , Takayuki Tsubota , Shinichi Tanifuji
IPC分类号： B32B17/06 , B32B27/36 , B32B15/04
CPC分类号： G02B5/0858 , C23C14/14 , C23C14/165 , F21S41/37 , F21V7/22 , G02B5/0808 , G02B5/085 , H01L51/5203 , H01L51/5271 , H05B33/26 , Y10T428/12896 , Y10T428/265 , Y10T428/31507 , Y10T428/31678
摘要： The present invention provides a reflection film, a reflection film laminate which are less likely to undergo agglomeration or sulfidation of an Ag thin film due to heat, and a LED, an organic EL display, and an organic EL illuminating instrument, each including any of these. The reflection film in accordance with the present invention is a reflection film formed on a substrate, characterized by being an Ag alloy film including Ag as a main component, and Bi in an amount of 0.02 atomic percent or more, and further including one or more of V, Ge, and Zn in a total content of 0.02 atomic percent or more, and satisfying the following expression (1): 7×[A]+13×[Bi]≦8 (1) where [A] (atomic percent) denotes the content of one or more of the V, Ge, and Zn, and [Bi] (atomic percent) denotes the content of Bi. Whereas, a reflection film laminate in accordance with the present invention is a reflection film laminate formed on a substrate, characterized by including: a first film comprising an Ag alloy film including Ag as a main component, and Bi in an amount of 0.02 atomic percent or more, and further including one or more of V, Ge, and Zn in a total content of 0.02 atomic percent or more, and satisfying the expression (1); and a second film including a Si oxide formed on the first film.
摘要翻译：本发明提供一种反射膜，由于热而不易发生Ag薄膜的聚集或硫化的反射膜层叠体，以及LED，有机EL显示器和有机EL照明器具，其分别包括这些。根据本发明的反射膜是形成在基板上的反射膜，其特征在于包括Ag作为主要成分的Ag合金膜，以及0.02原子％以上的Bi，并且还包括一个或多个（A）+ 13×[Bi]＆nlE; 8（1）其中[A]（原子数）为10原子％以上，满足下式（1）：V，Ge，百分比）表示V，Ge和Zn中的一种或多种的含量，[Bi]（原子百分比）表示Bi的含量。而根据本发明的反射膜层叠体是在基板上形成的反射膜层压体，其特征在于，包括：第一膜，包括以Ag为主要成分的Ag合金膜，以及0.02原子％的Bi 以上，进一步包含总量为0.02原子％以上的V，Ge，Zn中的一种以上，满足式（1）。以及形成在第一膜上的包含Si氧化物的第二膜。

3. 发明申请

US20120037493A1 ARC EVAPORATION SOURCE AND FILM FORMING METHOD USING THE SAME 有权
标题翻译： ARC蒸发源和薄膜成型方法
公开(公告)号：US20120037493A1
公开(公告)日：2012-02-16
申请号：US13263946
申请日：2010-04-14
申请人： Shinichi Tanifuji , Kenji Yamamoto , Hirofumi Fujii , Yoshinori Kurokawa
发明人： Shinichi Tanifuji , Kenji Yamamoto , Hirofumi Fujii , Yoshinori Kurokawa
IPC分类号： C23C14/32
CPC分类号： C23C14/325 , C23C14/54 , H01J37/32055 , H01J37/32669 , H01J37/34 , H01J37/345
摘要： Provided is an arc evaporation source wherein film-forming speed is increased by inducing magnetic lines in the substrate direction. The arc evaporation source is provided with: at least one outer circumferential magnet (3), which is disposed such that the outer circumferential magnet surrounds the outer circumference of a target (2) and that the magnetization direction thereof is in the direction orthogonally intersecting the surface of the target (2); and a rear surface magnet (4) disposed on the rear surface side of the target (2). The rear surface magnet (4) has a non-ring-shaped first permanent magnet (4A) wherein the polarity thereof faces the same direction as the polarity of the outer circumferential magnet (3) and the magnetization direction of the rear surface magnet (4) is in the direction orthogonally intersecting the surface of the target (2).
摘要翻译：提供了一种电弧蒸发源，其中通过在基板方向上诱导磁线来增加成膜速度。电弧蒸发源设置有：至少一个外周磁铁（3），其设置成使得外周磁铁围绕靶（2）的外周，并且其磁化方向与正交相交的方向目标（2）的表面; 以及设置在所述靶（2）的背面侧的后表面磁体（4）。后表面磁体（4）具有非环状的第一永磁体（4A），其极性与外周磁铁（3）的极性和背面磁体（4）的磁化方向相同的方向）在与靶（2）的表面正交相交的方向上。

4. 发明申请

US20090211667A1 SURFACE TREATMENT METHOD OF TITANIUM MATERIAL FOR ELECTRODES 审中-公开
标题翻译：电极材料表面处理方法
公开(公告)号：US20090211667A1
公开(公告)日：2009-08-27
申请号：US12325478
申请日：2008-12-01
申请人： Jun Suzuki , Toshiki Sato , Jun Hisamoto , Yoshinori Ito , Shinichi Tanifuji , Takashi Yashiki
发明人： Jun Suzuki , Toshiki Sato , Jun Hisamoto , Yoshinori Ito , Shinichi Tanifuji , Takashi Yashiki
IPC分类号： C23C8/10 , C21D9/00
CPC分类号： H01M8/0228 , H01M8/0206 , H01M8/0215
摘要： Disclosed herein is a surface treatment method of a titanium material for electrodes characterized by including: a titanium oxide layer formation step S1 of forming a titanium oxide layer with a thickness of 10 nm or more and 80 nm or less on the surface of a titanium material including pure titanium or a titanium alloy; a noble metal layer formation step S2 of forming a noble metal layer with a thickness of 2 nm or more including at least one noble metal selected from Au, Pt, and Pd on the titanium oxide layer by a PVD method; and a heat treatment step S3 of heat treating the titanium material having the noble metal layer formed thereon at a temperature of 300° C. or more and 800° C. or less.
摘要翻译：本发明公开了一种用于电极的钛材料的表面处理方法，其特征在于包括：在钛材料的表面上形成厚度为10nm以上且80nm以下的氧化钛层的氧化钛层形成工序S1 包括纯钛或钛合金; 通过PVD法在氧化钛层上形成厚度为2nm以上的含有选自Au，Pt，Pd中的至少一种贵金属的贵金属层的贵金属层形成工序S2; 以及在300℃以上且800℃以下的温度下对形成有贵金属层的钛材进行热处理的热处理工序S3。

5. 发明申请

US20100195231A1 REFLECTION FILM, REFLECTION FILM LAMINATE, LED, ORGANIC EL DISPLAY, AND ORGANIC EL ILLUMINATING INSTRUMENT 有权
标题翻译：反射膜，反射膜层压板，LED，有机EL显示器和有机EL照明仪器
公开(公告)号：US20100195231A1
公开(公告)日：2010-08-05
申请号：US12679633
申请日：2008-09-25
申请人： Jun Suzuki , Toshiki Sato , Takayuki Tsubota , Shinichi Tanifuji
发明人： Jun Suzuki , Toshiki Sato , Takayuki Tsubota , Shinichi Tanifuji
IPC分类号： G02B7/182 , B32B15/04 , B32B17/06 , B32B5/00
CPC分类号： G02B5/0858 , C23C14/14 , C23C14/165 , F21S41/37 , F21V7/22 , G02B5/0808 , G02B5/085 , H01L51/5203 , H01L51/5271 , H05B33/26 , Y10T428/12896 , Y10T428/265 , Y10T428/31507 , Y10T428/31678
摘要： The present invention provides a reflection film, a reflection film laminate which are less likely to undergo agglomeration or sulfidation of an Ag thin film due to heat, and a LED, an organic EL display, and an organic EL illuminating instrument, each including any of these. The reflection film in accordance with the present invention is a reflection film formed on a substrate, characterized by being an Ag alloy film including Ag as a main component, and Bi in an amount of 0.02 atomic percent or more, and further including one or more of V, Ge, and Zn in a total content of 0.02 atomic percent or more, and satisfying the following expression (1): 7×[A]+13×[Bi]≦8 (1) where [A] (atomic percent) denotes the content of one or more of the V, Ge, and Zn, and [Bi] (atomic percent) denotes the content of Bi. Whereas, a reflection film laminate in accordance with the present invention is a reflection film laminate formed on a substrate, characterized by including: a first film comprising an Ag alloy film including Ag as a main component, and Bi in an amount of 0.02 atomic percent or more, and further including one or more of V, Ge, and Zn in a total content of 0.02 atomic percent or more, and satisfying the expression (1); and a second film including a Si oxide formed on the first film.
摘要翻译：本发明提供一种反射膜，由于热而不易发生Ag薄膜的聚集或硫化的反射膜层叠体，以及LED，有机EL显示器和有机EL照明器具，其分别包括这些。根据本发明的反射膜是形成在基板上的反射膜，其特征在于包括Ag作为主要成分的Ag合金膜，以及0.02原子％以上的Bi，并且还包括一个或多个（A）+ 13×[Bi]＆nlE; 8（1）其中[A]（原子数）为10原子％以上，满足下式（1）：V，Ge，百分比）表示V，Ge和Zn中的一种或多种的含量，[Bi]（原子百分比）表示Bi的含量。而根据本发明的反射膜层叠体是在基板上形成的反射膜层压体，其特征在于，包括：第一膜，包括以Ag为主要成分的Ag合金膜，以及0.02原子％的Bi 以上，进一步包含总量为0.02原子％以上的V，Ge，Zn中的一种以上，满足式（1）。以及形成在第一膜上的包含Si氧化物的第二膜。

6. 发明申请

US20100119913A1 METAL SEPARATOR FOR FUEL CELL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：用于燃料电池的金属分离器及其制造方法
公开(公告)号：US20100119913A1
公开(公告)日：2010-05-13
申请号：US12594825
申请日：2008-03-05
申请人： Shinichi Tanifuji , Hirotaka Ito , Toshiki Sato , Jun Suzuki , Yoshinori Ito , Jun Hisamoto
发明人： Shinichi Tanifuji , Hirotaka Ito , Toshiki Sato , Jun Suzuki , Yoshinori Ito , Jun Hisamoto
IPC分类号： H01M2/00 , C23C14/22 , C23C14/16 , C23C14/34
CPC分类号： C23C14/22 , C22C5/02 , C22C5/04 , C22C14/00 , C22C16/00 , C22C27/02 , C23C14/16 , C23C14/165 , C23C14/345 , H01M8/0206 , H01M8/0208 , H01M8/021 , H01M8/0228 , Y02P70/56
摘要： A metal separator 1 for a fuel cell according to the invention is a metal separator for a fuel cell manufactured by using a metal substrate 2 with a flat surface, or with concave gas flow paths formed on at least a part of the surface. The metal separator 1 includes an acid-resistant metal film 3 formed over the surface of the metal substrate 2, and containing one or more kinds of non-noble metals selected from the group comprised of Zr, Nb, and Ta, and a conductive alloy film 4 formed over the acid-resistant metal film 3, and containing one or more kinds of noble metals selected from the group comprised of Au and Pt, and one or more kinds of non-noble metals selected from the group comprised of Zr, Nb, and Ta. A method for manufacturing the metal separator for a fuel cell according to the invention includes a step S1 of depositing an acid-resistant metal film, and a step S2 of depositing a conductive alloy film. With this structure, the invention provides the metal separator for a fuel cell with an excellent acid resistance and a low contact resistance, and a manufacturing method thereof.
摘要翻译：根据本发明的用于燃料电池的金属隔板1是通过使用具有平坦表面的金属基板2或者形成在表面的至少一部分上的凹入气体流路而制造的用于燃料电池的金属隔板。金属隔板1包括在金属基板2的表面上形成的耐酸金属膜3，并且含有选自Zr，Nb，Ta中的一种以上的非贵金属和导电性合金在耐酸金属膜3上形成的含有选自Au和Pt的一种或多种贵金属的一种或多种选自Zr，Nb ，和Ta。根据本发明的燃料电池用金属隔板的制造方法包括沉积耐酸金属膜的工序S1和沉积导电性合金膜的工序S2。利用该结构，本发明提供了具有优异的耐酸性和低接触电阻的燃料电池用金属隔板及其制造方法。

7. 发明申请

US20090297951A1 ANODE FOR LITHIUM ION SECONDARY BATTERY, PRODUCTION METHOD THEREOF, AND LITHIUM ION SECONDARY BATTERY USING THE SAME 有权
标题翻译：用于锂离子二次电池的阳极，其生产方法和使用其的锂离子二次电池
公开(公告)号：US20090297951A1
公开(公告)日：2009-12-03
申请号：US12424881
申请日：2009-04-16
申请人： Shoo KATSURA , Jun Hisamoto , Toshiki Sato , Jun Suzuki , Shinichi Tanifuji
发明人： Shoo KATSURA , Jun Hisamoto , Toshiki Sato , Jun Suzuki , Shinichi Tanifuji
IPC分类号： H01M4/58 , B05D5/12 , C23C14/48
CPC分类号： H01M4/583 , C23C14/0635 , C23C14/18 , C23C14/3464 , H01M10/052
摘要： Disclosed is anode for use in a lithium ion secondary battery. The anode includes an anode current collector and an anode active material arranged thereon, in which the anode active material contains amorphous carbon and at least one metal dispersed in the amorphous carbon, and the at least one metal is selected from: 30 to 70 atomic percent of Si; and 1 to 40 atomic percent of Sn. The anode gives a lithium ion secondary battery that has a high charge/discharge capacity and is resistant to deterioration of its anode active material even after repetitive charge/discharge cycles.
摘要翻译：公开了用于锂离子二次电池的阳极。阳极包括阳极集电器和布置在其上的负极活性材料，其中阳极活性材料包含无定形碳和分散在无定形碳中的至少一种金属，并且所述至少一种金属选自：30至70原子％的Si; 和1〜40原子％的Sn。阳极产生具有高充电/放电容量的锂离子二次电池，并且即使在重复充电/放电循环之后也能耐受其负极活性物质的劣化。

8. 发明申请

US20090181283A1 REGENERATION METHOD OF SEPARATOR FOR FUEL CELL, REGENERATED SEPARATOR FOR FUEL CELL AND FUEL CELL 审中-公开
标题翻译：燃料电池分离器再生方法，燃料电池和燃料电池再生分离器
公开(公告)号：US20090181283A1
公开(公告)日：2009-07-16
申请号：US12341116
申请日：2008-12-22
申请人： Toshiki Sato , Jun Hisamoto , Jun Suzuki , Yoshinori Ito , Shinichi Tanifuji
发明人： Toshiki Sato , Jun Hisamoto , Jun Suzuki , Yoshinori Ito , Shinichi Tanifuji
IPC分类号： H01M2/00 , B05D5/12 , C23C16/513 , B05D3/04 , C23C14/34
CPC分类号： H01M8/008 , C23C14/021 , C23C14/022 , C23C14/165 , C23C14/545 , C23C14/5806 , H01M8/0206 , H01M8/0228 , H01M2008/1095 , Y02W30/86
摘要： Disclosed herein is a method for regenerating a separator for a fuel cell in which the separator is composed of a substrate of Ti or Ti alloy and a conductive film formed thereon. The method includes a step of removing the conductive film from the separator for a fuel cell and also removing part of the surface of the substrate, thereby giving a regenerated substrate, and a step of forming a regenerated conductive film on the regenerated substrate. The conductive film and the regenerated conductive film are at least one species of noble metal or alloy thereof selected from the group of noble metals consisting of Au, Pt, and Pd, or an alloy composed of at least one species selected from the group of noble metals and one species selected from the group of metals consisting of Ti, Zr, Hf, Nb, Ta, and Si.
摘要翻译：本发明公开了一种燃料电池用隔膜的再生方法，其中隔板由Ti或Ti合金的基板和形成在其上的导电膜构成。该方法包括从燃料电池用隔板除去导电膜的步骤，还除去基板表面的一部分，从而得到再生基板，以及在再生基板上形成再生导电膜的工序。导电膜和再生导电膜是选自由Au，Pt和Pd组成的贵金属组的贵金属或其合金中的至少一种，或由至少一种选自贵金属金属和选自由Ti，Zr，Hf，Nb，Ta和Si组成的金属组中的一种。

9. 发明申请

US20130098881A1 ARC EVAPORATION SOURCE HAVING FAST FILM-FORMING SPEED, COATING FILM MANUFACTURING METHOD AND FILM FORMATION APPARATUS USING THE ARC EVAPORATION SOURCE 有权
标题翻译：具有快速成膜速度的ARC蒸发源，涂膜生产方法和使用ARC蒸发源的膜形成装置
公开(公告)号：US20130098881A1
公开(公告)日：2013-04-25
申请号：US13805259
申请日：2011-06-15
申请人： Shinichi Tanifuji , Kenji Yamamoto , Homare Nomura , Yoshinori Kurokawa , Naoyuki Goto
发明人： Shinichi Tanifuji , Kenji Yamamoto , Homare Nomura , Yoshinori Kurokawa , Naoyuki Goto
IPC分类号： B23K9/00
CPC分类号： B23K9/00 , C23C14/325 , H01J37/32055 , H01J37/3402
摘要： An arc evaporation source having fast film-forming speed includes: at least one circumference magnet surrounding the circumference of a target, wherein the magnetization direction of the magnet runs orthogonal to the target surface; a non-ring shaped first permanent magnet on the target's rear surface side has a polarity in the same direction as the circumference magnet, and is arranged so that its magnetization direction runs orthogonal to the target's surface; a non-ring shaped second permanent magnet arranged either on the rear surface side of the first permanent magnet or between the first permanent magnet and the target, so as to leave a gap from the first permanent magnet, has a polarity in the same direction as the circumference magnet, and is arranged so that its magnetization direction runs orthogonal to the surface of the target; and a magnetic body between the first permanent magnet and the second permanent magnet.
摘要翻译：具有快速成膜速度的电弧蒸发源包括：围绕靶周围的至少一个圆周磁体，其中磁体的磁化方向正交于目标表面; 目标的背面侧的非环状的第一永久磁铁具有与周边磁体相同方向的极性，并且被配置为使其磁化方向与目标表面正交; 布置在第一永磁体的后表面侧或第一永磁体与靶之间以便与第一永久磁铁隔开间隙的非环形的第二永久磁铁的极性与圆周磁体，并且被布置成使得其磁化方向垂直于靶的表面; 以及在第一永磁体和第二永磁体之间的磁体。

10. 发明授权

US08367200B2 Reflecting film excellent in cohesion resistance and sulfur resistance 有权
标题翻译：反射膜具有优异的内聚力和耐硫性
公开(公告)号：US08367200B2
公开(公告)日：2013-02-05
申请号：US11962942
申请日：2007-12-21
申请人： Toshiki Sato , Jun Suzuki , Shinichi Tanifuji , Takayuki Tsubota , Yoshinori Ito
发明人： Toshiki Sato , Jun Suzuki , Shinichi Tanifuji , Takayuki Tsubota , Yoshinori Ito
IPC分类号： B32B15/00
CPC分类号： C23C28/00 , B05D1/62 , Y10T428/265
摘要： A reflecting film including: an Ag or Ag-base alloy thin film of an Ag-base alloy containing at least one element among Au, Pt, Pd, Bi, and rare-earth elements as a first layer; a film of an oxide or oxynitride of at least one element among Si, Al and Ti having a thickness between 5 and 50 nm as a second layer deposited on the first layer; and a film having a thickness between 10 and 100 nm formed by a plasma polymerization process as a third layer deposited on the second layer.
摘要翻译：一种反射膜，包括：作为第一层的包含Au，Pt，Pd，Bi和稀土元素中的至少一种元素的Ag基合金的Ag或Ag基合金薄膜; Si，Al和Ti中的至少一种元素的氧化物或氧氮化物的膜，其厚度为5至50nm，作为沉积在第一层上的第二层; 以及通过等离子体聚合方法形成的厚度在10和100nm之间的膜作为沉积在第二层上的第三层。

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