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91. 发明申请

US20110104902A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110104902A1
公开(公告)日：2011-05-05
申请号：US12913441
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
发明人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
IPC分类号： H01L21/3065 , C23C16/505 , H01L21/30 , C23C14/34
CPC分类号： H01J37/3211 , C23C16/455 , C23C16/50 , H01J37/321 , H01J37/3244 , H05H1/46
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。

92. 发明申请

US20110000883A1 PLASMA PROCESSING APPARATUS, FOCUS RING, AND SUSCEPTOR 有权
标题翻译：等离子体加工设备，聚焦环和SUSCEPTOR
公开(公告)号：US20110000883A1
公开(公告)日：2011-01-06
申请号：US12850391
申请日：2010-08-04
申请人： Shosuke Endoh , Noriyuki Iwabuchi , Shigeaki Kato , Tomoya Okubo , Jun Hirose , Koichi Nagakura , Chishio Koshimizu , Kazuki Denpoh
发明人： Shosuke Endoh , Noriyuki Iwabuchi , Shigeaki Kato , Tomoya Okubo , Jun Hirose , Koichi Nagakura , Chishio Koshimizu , Kazuki Denpoh
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32642 , H01L21/6831
摘要： A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.
摘要翻译：具有聚焦环的等离子体处理装置能够大大提高聚焦环的冷却效率，同时防止其成本增加。等离子体处理装置由具有静电卡盘和聚焦环的基座构成。将要进行等离子体处理的晶片W安装在静电卡盘上。聚焦环具有电介质材料部分和导电材料部分。介电材料部分形成与静电卡盘接触设置的接触部分。导电材料部分面对电介质材料部分的静电卡盘。

93. 发明授权

US07829463B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07829463B2
公开(公告)日：2010-11-09
申请号：US11694126
申请日：2007-03-30
申请人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： H01L21/44
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32706 , H01J37/32935
摘要： A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.
摘要翻译：等离子体处理方法通过使用在处理空间中产生的等离子体在衬底上进行所需的等离子体处理。第一电极和第二电极平行放置在接地的处理容器中，基板被支撑在第二电极上以面对第一电极，处理容器被真空抽真空，所需的处理气体被供应到形成的处理空间在第一电极，第二电极和处理容器的侧壁之间，并且向第二电极提供第一射频功率。第一电极经由绝缘体或空间连接到处理容器，并且经由静电电容根据在衬底上进行的等离子体处理的工艺条件而变化的电容变化单元电耦合到接地电位。

94. 发明申请

US20100243162A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100243162A1
公开(公告)日：2010-09-30
申请号：US12749874
申请日：2010-03-30
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： C23F1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/321 , H01J37/32935
摘要： A uniformity of plasma density in a target object surface and plasma processing characteristics can be improved. A plasma processing apparatus 10 includes: a processing chamber 100 in which a plasma process is performed on a wafer W; a first high frequency power supply 140 configured to output a high frequency power; a high frequency antenna 120 including an outer coil, an inner coil and n (n is an integer equal to or greater than 1) number of intermediate coil(s) that are concentrically wound about a central axis outside the processing chamber 100; and a dielectric window 105 provided at a part of a wall of the processing chamber 100 and configured to introduce electromagnetic field energy generated from the high frequency antenna 120 into the processing chamber 100.
摘要翻译：可以提高目标物体表面中的等离子体密度的均匀性和等离子体处理特性。等离子体处理装置10包括：处理室100，其中在晶片W上执行等离子体处理; 配置为输出高频功率的第一高频电源140; 包括外部线圈，内部线圈和n（n是等于或大于1的整数）的高频天线120在处理室100外部围绕中心轴线同心缠绕的中间线圈的数量; 以及设置在处理室100的壁的一部分处并且被配置为将从高频天线120产生的电磁场能量引入处理室100中的电介质窗口105。

95. 发明申请

US20100126668A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体处理装置和方法
公开(公告)号：US20100126668A1
公开(公告)日：2010-05-27
申请号：US12696323
申请日：2010-01-29
申请人： Akira KOSHIISHI , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira KOSHIISHI , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

96. 发明授权

US07542148B2 Method for measuring physical quantity of measurement object in substrate processing apparatus and storage medium storing program for implementing the method 有权
标题翻译：用于测量基板处理装置中的测量对象的物理量的方法和用于实现该方法的存储介质存储程序
公开(公告)号：US07542148B2
公开(公告)日：2009-06-02
申请号：US11564604
申请日：2006-11-29
申请人： Chishio Koshimizu , Tomohiro Suzuki
发明人： Chishio Koshimizu , Tomohiro Suzuki
IPC分类号： G01B11/02
CPC分类号： G01B9/02023 , G01B9/02019 , G01B9/02028 , G01B9/02083 , G01B9/0209 , G01J5/0003 , G01J2005/583 , G01K5/52 , G01K11/00 , G01K11/3206
摘要： A method capable of accurately measuring a physical quantity of a measurement object in a substrate processing apparatus. In a temperature measurement apparatus for implementing the method, two interference positions are measured at different timings when a reference mirror is caused to move in the direction away from a collimator fiber, and a difference between the two interference positions is calculated. When the reference mirror remote from the collimator fiber is caused to move toward the collimator fiber, two interference positions are measured at different timings, and a difference between the two interference positions is calculated. An average value of the interference position differences is calculated, an optical path length difference is determined from the average value, and a wafer temperature is calculated from the optical path length difference.
摘要翻译：一种能够精确地测量基板处理装置中的测量对象的物理量的方法。在实现该方法的温度测量装置中，当使参考反射镜沿远离准直光纤的方向移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。当使远离准直光纤的参考镜向准直器光纤移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。计算干涉位置差的平均值，根据平均值确定光程长度差，并根据光程长度差计算晶片温度。

97. 发明申请

US20080304543A1 TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20080304543A1
公开(公告)日：2008-12-11
申请号：US12043654
申请日：2008-03-06
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01K1/02
CPC分类号： G01J5/02 , G01K1/026 , G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

98. 发明申请

US20080218744A1 TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20080218744A1
公开(公告)日：2008-09-11
申请号：US12043406
申请日：2008-03-06
申请人： Jun ABE , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun ABE , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01N21/00
CPC分类号： G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes a controller that stores, as initial peak position data, positions of interference peaks respectively measured in advance by irradiating the first to the nth measuring beam onto the first to the nth measurement point of the temperature measurement object, and compares the initial peak position data to positions of interference peaks respectively measured during a temperature measurement to thereby estimate a temperature at each of the first to the nth measurement point.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括控制器，该控制器通过将第一至第N测量光束照射到温度测量对象的第一至第N测量点上，预先分别测量的干扰峰的位置作为初始峰值位置数据，并将其进行比较初始峰值位置数据分别在温度测量期间测量的干涉峰位置，从而估计第一至第n测量点中的每一个处的温度。

99. 发明授权

US07335278B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07335278B2
公开(公告)日：2008-02-26
申请号：US10675966
申请日：2003-10-02
申请人： Chishio Koshimizu , Hiroyuki Ishihara , Kimihiro Higuchi , Koji Maruyama
发明人： Chishio Koshimizu , Hiroyuki Ishihara , Kimihiro Higuchi , Koji Maruyama
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译：静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘卡盘表面。晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给第一至第三温度传感器142,144和146的中心之间的空间的He的压力水平晶片W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116与晶片W的外边缘和静电卡盘108之间的空间以及由外部环内的加热器148产生的热量基于关于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。

100. 发明申请

US20070227665A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20070227665A1
公开(公告)日：2007-10-04
申请号：US11694126
申请日：2007-03-30
申请人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： C23F1/00 , H01L21/465
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32706 , H01J37/32935
摘要： A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.
摘要翻译：等离子体处理方法通过使用在处理空间中产生的等离子体在衬底上进行所需的等离子体处理。第一电极和第二电极平行放置在接地的处理容器中，基板被支撑在第二电极上以面对第一电极，处理容器被真空抽真空，所需的处理气体被供应到形成的处理空间在第一电极，第二电极和处理容器的侧壁之间，并且向第二电极提供第一射频功率。第一电极经由绝缘体或空间连接到处理容器，并且经由静电电容根据在衬底上进行的等离子体处理的工艺条件而变化的电容变化单元电耦合到接地电位。

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