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1. 发明授权

US06676804B1 Method and apparatus for plasma processing 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US06676804B1
公开(公告)日：2004-01-13
申请号：US09720910
申请日：2001-01-02
申请人： Chishio Koshimizu , Hiroyuki Ishihara , Kimihiro Higuchi , Koji Maruyama
发明人： Chishio Koshimizu , Hiroyuki Ishihara , Kimihiro Higuchi , Koji Maruyama
IPC分类号： H05H100
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译：静电吸盘108设置在设置在蚀刻装置100的处理室102内的下电极106上，并且导电内环体112a和绝缘外环体112b包围安装在卡盘上的晶片W的外边缘表面。晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给晶片W的中心之间的空间的He的压力水平以及静电卡盘108经由第一气体出口管道114以及经由第二气体出口管道116和晶片W的外边缘与静电卡盘108之间的空间以及外环体112b内的加热器148产生的热量基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。

2. 发明申请

US20050172904A1 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20050172904A1
公开(公告)日：2005-08-11
申请号：US10675966
申请日：2003-10-02
申请人： Chishio Koshimizu , Hiroyuki Ishihara , Kimihiro Higuchi , Koji Maruyama
发明人： Chishio Koshimizu , Hiroyuki Ishihara , Kimihiro Higuchi , Koji Maruyama
IPC分类号： H05H1/46 , C23C16/00 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683 , H05H1/00
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译：静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘卡盘表面。晶片W和内外环体112a和112b的温度由第一第三温度传感器142,144和146检测。控制器140控制供应给晶片中心之间的空间的He的压力水平 W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116到晶片W的外边缘和静电卡盘108之间的空间以及由外部环体内的加热器148产生的热量 112b基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。

3. 发明授权

US07335278B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07335278B2
公开(公告)日：2008-02-26
申请号：US10675966
申请日：2003-10-02
申请人： Chishio Koshimizu , Hiroyuki Ishihara , Kimihiro Higuchi , Koji Maruyama
发明人： Chishio Koshimizu , Hiroyuki Ishihara , Kimihiro Higuchi , Koji Maruyama
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译：静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘卡盘表面。晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给第一至第三温度传感器142,144和146的中心之间的空间的He的压力水平晶片W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116与晶片W的外边缘和静电卡盘108之间的空间以及由外部环内的加热器148产生的热量基于关于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。

4. 发明申请

US20110214813A1 PLASMA PROCESSING METHOD AND APPARATUS 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20110214813A1
公开(公告)日：2011-09-08
申请号：US13108612
申请日：2011-05-16
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： H01L21/00 , C23F1/08
CPC分类号： H01J37/32082 , H01J37/32422 , H01J37/32935
摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
摘要翻译：等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。通过该等离子体对衬底进行预定的等离子体处理。等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态。

5. 发明授权

US08004157B2 Piezoelectric resonator plate and piezoelectric resonator device 有权
标题翻译：压电谐振板和压电谐振器装置
公开(公告)号：US08004157B2
公开(公告)日：2011-08-23
申请号：US11885260
申请日：2006-03-02
申请人： Minoru Iizuka , Tatsuya Murakami , Syunsuke Satoh , Takashi Shirai , Hiroyuki Ishihara , Tomo Fujii
发明人： Minoru Iizuka , Tatsuya Murakami , Syunsuke Satoh , Takashi Shirai , Hiroyuki Ishihara , Tomo Fujii
IPC分类号： H01L41/08
CPC分类号： H03H9/1021 , H03H9/215
摘要： An electrode forming region for providing lead electrodes (65a, 65b) is provided on a crystal resonator plate (2). Opposed side surfaces (67a, 67b) of a substrate (6) are formed and inclined in the same direction with respect to a front major surface (63). Also, an adhesion reinforcing portion (7) for reinforcing adhesion to a conductive adhesive (5) is provided in the electrode forming region for the lead electrodes (65a, 65b). For example, the adhesion reinforcing portion (7) is a notch portion which is cut and formed in the opposed side surfaces (67a, 67b). Thereby, an adhesion strength of the crystal resonator plate (2) and the conductive adhesive (5) is increased.
摘要翻译：在晶体谐振器板（2）上设置用于提供引线电极（65a，65b）的电极形成区域。形成基板（6）的相对的侧面（67a，67b）并相对于前主表面（63）沿相同的方向倾斜。此外，在用于引线电极（65a，65b）的电极形成区域中设置有用于增强与导电粘合剂（5）的粘附的粘合增强部分（7）。例如，粘合强化部（7）是在相对的侧面（67a，67b）上切断并形成的切口部。由此，增加了晶体谐振器板（2）和导电粘合剂（5）的粘附强度。

6. 发明申请

US20100043974A1 PLASMA PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20100043974A1
公开(公告)日：2010-02-25
申请号：US12607828
申请日：2009-10-28
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： H01L21/465
CPC分类号： H01J37/32082 , H01J37/32422 , H01J37/32935
摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
摘要翻译：等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。通过该等离子体对衬底进行预定的等离子体处理。等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态。

7. 发明申请

US20090291644A1 WIRELESS COMMUNICATION APPARATUS 有权
标题翻译：无线通信设备
公开(公告)号：US20090291644A1
公开(公告)日：2009-11-26
申请号：US12472278
申请日：2009-05-26
申请人： Yutaka Suwa , Hiroyuki Ishihara , Toshihiko Sakata , Koji Hayashida , Akira Shibuta , Norihiro Toyomura , Kyoichi Obana
发明人： Yutaka Suwa , Hiroyuki Ishihara , Toshihiko Sakata , Koji Hayashida , Akira Shibuta , Norihiro Toyomura , Kyoichi Obana
IPC分类号： H04B1/40
CPC分类号： H04B1/1027 , H04B1/005 , H04W72/085
摘要： A wireless communication apparatus is provided. The apparatus includes a wireless transceiver which conducts communication with another wireless communication apparatus using a channel belonging to a first band of a plurality of frequency bands, and a switching unit which switches the channel being used by the wireless transceiver to a different channel of a second band of the plurality of frequency bands other than the first band.
摘要翻译：提供一种无线通信装置。该装置包括使用属于多个频带的第一频带的信道与另一无线通信装置进行通信的无线收发机，以及将无线收发机使用的信道切换到第二频带的不同信道的交换单元除了第一频带之外的多个频带的频带。

8. 发明申请

US20080265717A1 Piezoelectric Resonator Plate and Piezoelectric Resonator Device 有权
标题翻译：压电谐振器板和压电谐振器器件
公开(公告)号：US20080265717A1
公开(公告)日：2008-10-30
申请号：US11885260
申请日：2006-03-02
申请人： Minoru Iizuka , Tatsuya Murakami , Syunsuke Satoh , Takashi Shirai , Hiroyuki Ishihara , Tomo Fujii
发明人： Minoru Iizuka , Tatsuya Murakami , Syunsuke Satoh , Takashi Shirai , Hiroyuki Ishihara , Tomo Fujii
IPC分类号： H03H9/10
CPC分类号： H03H9/1021 , H03H9/215
摘要： An electrode forming region for providing lead electrodes (65a, 65b) is provided on a crystal resonator plate (2). Opposed side surfaces (67a, 67b) of a substrate (6) are formed and inclined in the same direction with respect to a front major surface (63). Also, an adhesion reinforcing portion (7) for reinforcing adhesion to a conductive adhesive (5) is provided in the electrode forming region for the lead electrodes (65a, 65b). For example, the adhesion reinforcing portion (7) is a notch portion which is cut and formed in the opposed side surfaces (67a, 67b). Thereby, an adhesion strength of the crystal resonator plate (2) and the conductive adhesive (5) is increased.
摘要翻译：在晶体谐振器板（2）上设置用于提供引线电极（65a，65b）的电极形成区域。形成基板（6）的相对的侧面（67a，67b）并相对于前主表面（63）沿相同的方向倾斜。此外，在用于引线电极（65a，65b）的电极形成区域中设置用于增强与导电粘合剂（5）的粘附的粘附强化部分（7）。例如，粘合强化部（7）是在相对的侧面（67a，67b）中被切割并形成的切口部。由此，增加了晶体谐振器板（2）和导电粘合剂（5）的粘附强度。

9. 发明授权

US07268462B2 Rotating electrical apparatus 有权
标题翻译：旋转电器
公开(公告)号：US07268462B2
公开(公告)日：2007-09-11
申请号：US10506302
申请日：2003-08-08
申请人： Hiroyuki Ishihara , Haruyoshi Hino , Shinya Naito , Keiko Murota , Junji Terada , Tomohiro Ono
发明人： Hiroyuki Ishihara , Haruyoshi Hino , Shinya Naito , Keiko Murota , Junji Terada , Tomohiro Ono
IPC分类号： H02K1/22
CPC分类号： H02K7/14 , B60G2204/30 , B60L2200/12 , H02K15/16 , H02K21/24 , Y02T10/641
摘要： This invention provides a rotary electric machine with a high productivity/maintainability.Since the shaft portion 43 or the stepwise drawn portion is formed with a flat face 47 perpendicular to the rotational axis, when the magnetic poles 42 are bonded to the rotor 40, an accurate gap control can be achieved by applying a certain pressure to the magnetic poles with a jig or the like using the perpendicular flat face 47 as reference, or by controlling the distance from the perpendicular flat face 47.
摘要翻译：本发明提供一种具有高生产率/可维护性的旋转电机。由于轴部43或阶梯式拉伸部形成有与旋转轴线垂直的平坦面47，因此当磁极42与转子40接合时，可以通过向磁铁施加一定的压力来实现精确的间隙控制使用垂直平面47作为参考，或通过控制与垂直平面47的距离的夹具等的杆。

10. 发明授权

US07183219B1 Method of plasma processing 有权
标题翻译：等离子体处理方法
公开(公告)号：US07183219B1
公开(公告)日：2007-02-27
申请号：US09869277
申请日：1999-12-21
申请人： Kiichi Hama , Hiroyuki Ishihara , Akinori Kitamura
发明人： Kiichi Hama , Hiroyuki Ishihara , Akinori Kitamura
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01J37/3299 , H01L21/31116
摘要： An SiO2 film layer formed at a wafer placed inside a process chamber of an etching device is etched by generating plasma from a process gas containing fluorocarbon which has been introduced into the process chamber. The contents of an etchant and the byproducts are measured through infrared laser absorption analysis. The individual contents thus measured are compared with the contents of the etchant and the byproducts in the plasma corresponding to the increase in the aspect ratio of a contact hole set in advance. The quantity of O2 added into the process gas is adjusted to match the measured contents with the predetermined contents. The quantity of O2 added into the process gas is continuously increased as the aspect ratio becomes higher. As a result, a contact hole is formed at the SiO2 film layer without damaging the photoresist film layer or inducing an etch stop.
摘要翻译：在放置在蚀刻装置的处理室内的晶片上形成的SiO 2膜层通过从已经被引入到处理室中的含有碳氟化合物的工艺气体产生等离子体来蚀刻。通过红外激光吸收分析测量蚀刻剂和副产物的含量。将如此测量的各个内容与预先设定的接触孔的纵横比的增加相对应的等离子体中的蚀刻剂和副产物的含量进行比较。调整添加到处理气体中的O 2 2的量以使测量的内容与预定内容相匹配。加入到工艺气体中的O 2 2的量随着纵横比变高而不断增加。结果，在SiO 2膜层处形成接触孔，而不损害光致抗蚀剂膜层或引起蚀刻停止。

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