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1. 发明授权

US4602063A Production of reinforced rubber composition 失效
标题翻译：生产加固橡胶组合物
公开(公告)号：US4602063A
公开(公告)日：1986-07-22
申请号：US686278
申请日：1984-12-26
申请人： Shinji Yamamoto , Kohei Kaijiri , Koichi Nagakura
发明人： Shinji Yamamoto , Kohei Kaijiri , Koichi Nagakura
IPC分类号： C08G81/00 , C08G81/02 , C08L1/00 , C08L7/00 , C08L21/00 , C08L23/00 , C08L23/16 , C08L23/22 , C08L27/00 , C08L51/00 , C08L51/02 , C08L59/00 , C08L61/04 , C08L75/00 , C08L75/04 , C08L77/00 , C08L101/00
CPC分类号： C08G81/028 , C08L21/00 , C08L9/00 , C08L2312/04 , Y10T152/10
摘要： A process for producing a reinforced rubber composition comprising the steps of:dispersing fine fibers of thermoplastic polymer having ##STR1## groups in a continuous phase comprising vulcanizable synthetic rubber, other than butadiene rubber, containing a tackifier incorporated thereinto; andgrafting the vulcanizable synthetic rubber onto the thermoplastic polymer at the interface of the fine fibers through a novolak type phenol resin.This reinforced rubber composition is capable of providing a vulcanizate having an excellent strength and modulus.
摘要翻译：一种生产增强橡胶组合物的方法，包括以下步骤：将具有成型组的热塑性聚合物的细纤维分散在连续相中，所述连续相包含含有粘合剂的增粘剂的除丁二烯橡胶之外的可硫化合成橡胶; 并通过酚醛清漆型酚醛树脂将可硫化的合成橡胶在细纤维的界面上接枝到热塑性聚合物上。该增强橡胶组合物能够提供具有优异的强度和模量的硫化橡胶。

2. 发明授权

US08071473B2 Semiconductor device manufacturing method and storage medium 有权
标题翻译：半导体器件制造方法和存储介质
公开(公告)号：US08071473B2
公开(公告)日：2011-12-06
申请号：US12222666
申请日：2008-08-13
申请人： Kazuki Narishige , Koichi Nagakura
发明人： Kazuki Narishige , Koichi Nagakura
IPC分类号： H01L21/4763
CPC分类号： H01L21/31122 , H01L21/31116 , H01L21/31138
摘要： An object of the present invention is to obtain a favorable etching shape in etching an organic film formed on a substrate.A semiconductor device manufacturing method according to the present invention comprises the steps of: etching with plasma a silicon-containing film and transferring a pattern of a pattern mask stacked on the silicon-containing film onto the silicon-containing film to form a patterned silicon-containing film; removing the pattern mask using plasma to expose the surface of the silicon-containing film; and etching the surface of the organic film through the patterned silicon-containing film by use of oxygen active species in plasma to form a concave portion on the organic film. Thereafter, the silicon-containing film is sputtered to form silicon-containing protection films on the inner wall surfaces of the concave portion. The concave portion is further etched in its depth direction through the patterned silicon-containing film by use of oxygen active species in plasma. Thus, the concave portion can be further etched while the side walls of the concave portion are protected from active oxygen species.
摘要翻译：本发明的目的是在蚀刻形成在基板上的有机膜时获得良好的蚀刻形状。根据本发明的半导体器件制造方法包括以下步骤：用等离子体蚀刻含硅膜并将堆叠在含硅膜上的图案掩模的图案转印到含硅膜上以形成图案化硅 - 含膜; 使用等离子体去除图案掩模以暴露含硅膜的表面; 并且通过使用等离子体中的氧活性物质通过图案化的含硅膜蚀刻有机膜的表面，以在有机膜上形成凹部。此后，将溅射的含硅膜在凹部的内壁面上形成含硅保护膜。通过使用等离子体中的氧活性物质，通过图案化的含硅膜在其深度方向上进一步蚀刻凹部。因此，可以进一步蚀刻凹部，同时保护凹部的侧壁不受活性氧的影响。

3. 发明申请

US20090045165A1 Semiconductor device manufacturing method and storage medium 有权
标题翻译：半导体器件制造方法和存储介质
公开(公告)号：US20090045165A1
公开(公告)日：2009-02-19
申请号：US12222666
申请日：2008-08-13
申请人： Kazuki Narishige , Koichi Nagakura
发明人： Kazuki Narishige , Koichi Nagakura
IPC分类号： C23F1/00
CPC分类号： H01L21/31122 , H01L21/31116 , H01L21/31138
摘要： An object of the present invention is to obtain a favorable etching shape in etching an organic film formed on a substrate.A semiconductor device manufacturing method according to the present invention comprises the steps of: etching with plasma a silicon-containing film and transferring a pattern of a pattern mask stacked on the silicon-containing film onto the silicon-containing film to form a patterned silicon-containing film; removing the pattern mask using plasma to expose the surface of the silicon-containing film; and etching the surface of the organic film through the patterned silicon-containing film by use of oxygen active species in plasma to form a concave portion on the organic film. Thereafter, the silicon-containing film is sputtered to form silicon-containing protection films on the inner wall surfaces of the concave portion. The concave portion is further etched in its depth direction through the patterned silicon-containing film by use of oxygen active species in plasma. Thus, the concave portion can be further etched while the side walls of the concave portion are protected from active oxygen species.
摘要翻译：本发明的目的是在蚀刻形成在基板上的有机膜时获得良好的蚀刻形状。根据本发明的半导体器件制造方法包括以下步骤：用等离子体蚀刻含硅膜并将堆叠在含硅膜上的图案掩模的图案转印到含硅膜上以形成图案化硅 - 含膜; 使用等离子体去除图案掩模以暴露含硅膜的表面; 并且通过使用等离子体中的氧活性物质通过图案化的含硅膜蚀刻有机膜的表面，以在有机膜上形成凹部。此后，将溅射的含硅膜在凹部的内壁面上形成含硅保护膜。通过使用等离子体中的氧活性物质，通过图案化的含硅膜在其深度方向上进一步蚀刻凹部。因此，可以进一步蚀刻凹部，同时保护凹部的侧壁不受活性氧的影响。

4. 发明申请

US20110000883A1 PLASMA PROCESSING APPARATUS, FOCUS RING, AND SUSCEPTOR 有权
标题翻译：等离子体加工设备，聚焦环和SUSCEPTOR
公开(公告)号：US20110000883A1
公开(公告)日：2011-01-06
申请号：US12850391
申请日：2010-08-04
申请人： Shosuke Endoh , Noriyuki Iwabuchi , Shigeaki Kato , Tomoya Okubo , Jun Hirose , Koichi Nagakura , Chishio Koshimizu , Kazuki Denpoh
发明人： Shosuke Endoh , Noriyuki Iwabuchi , Shigeaki Kato , Tomoya Okubo , Jun Hirose , Koichi Nagakura , Chishio Koshimizu , Kazuki Denpoh
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32642 , H01L21/6831
摘要： A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.
摘要翻译：具有聚焦环的等离子体处理装置能够大大提高聚焦环的冷却效率，同时防止其成本增加。等离子体处理装置由具有静电卡盘和聚焦环的基座构成。将要进行等离子体处理的晶片W安装在静电卡盘上。聚焦环具有电介质材料部分和导电材料部分。介电材料部分形成与静电卡盘接触设置的接触部分。导电材料部分面对电介质材料部分的静电卡盘。

5. 发明授权

US5753365A Rubber composition and all season type pneumatic tires made from a rubber composition 失效
标题翻译：橡胶组合物和由橡胶组合物制成的所有季节型充气轮胎
公开(公告)号：US5753365A
公开(公告)日：1998-05-19
申请号：US596755
申请日：1996-02-05
申请人： Yoshiyuki Morimoto , Koji Yamauchi , Seiichiro Iwafune , Tatsuro Hamada , Masanori Aoyama , Eiji Yamanaka , Koichi Nagakura , Koji Ishiguchi
发明人： Yoshiyuki Morimoto , Koji Yamauchi , Seiichiro Iwafune , Tatsuro Hamada , Masanori Aoyama , Eiji Yamanaka , Koichi Nagakura , Koji Ishiguchi
IPC分类号： B60C1/00 , C08L21/00 , B60C11/00
CPC分类号： B60C1/0016 , B60C11/005 , C08L21/00 , Y10T152/10279 , Y10T428/29 , Y10T428/2982 , Y10T428/2998
摘要： A rubber composition includes a rubber component and particulates of a crystalline syndiotactic-1,2-polybutadiene resin dispersed therein. The particulates have an average particle diameter of 1 to 500 .mu.m, and the melting point of the crystalline syndiotactic-1,2-polybutadiene resin is not less than 110.degree. C. The compounding ratio of the resin is 5 to 60 parts by weight relative to 100 parts by weight of the rubber component. The rubber composition is useful for tires, other rubber articles, etc. With respect to tires in particular, a pneumatic tire includes a rubber composition used for a tread, wherein the rubber composition includes a rubber component and particulates of crystalline syndiotactic-1,2-polybutadiene resin. The matrix portion of the tread rubber other than the above particulates is preferably a foamed rubber.
摘要翻译：橡胶组合物包括分散在其中的橡胶组分和结晶间规-1,2-聚丁二烯树脂的颗粒。颗粒的平均粒径为1〜500μm，结晶间规-1,2-聚丁二烯树脂的熔点不低于110℃。树脂的配混比为5〜60重量份相对于100重量份的橡胶组分。橡胶组合物可用于轮胎，其它橡胶制品等。对于轮胎而言，特别地，充气轮胎包括用于胎面的橡胶组合物，其中橡胶组合物包括橡胶组分和晶体间同立构-1,2 聚丁二烯树脂。除了上述颗粒之外的胎面橡胶的基质部分优选是发泡橡胶。

6. 发明授权

US08124539B2 Plasma processing apparatus, focus ring, and susceptor 有权
标题翻译：等离子体处理装置，聚焦环和基座
公开(公告)号：US08124539B2
公开(公告)日：2012-02-28
申请号：US12850391
申请日：2010-08-04
申请人： Shosuke Endoh , Noriyuki Iwabuchi , Shigeaki Kato , Tomoya Okubo , Jun Hirose , Koichi Nagakura , Chishio Koshimizu , Kazuki Denpoh
发明人： Shosuke Endoh , Noriyuki Iwabuchi , Shigeaki Kato , Tomoya Okubo , Jun Hirose , Koichi Nagakura , Chishio Koshimizu , Kazuki Denpoh
IPC分类号： H01L21/302
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32642 , H01L21/6831
摘要： A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.
摘要翻译：具有聚焦环的等离子体处理装置能够大大提高聚焦环的冷却效率，同时防止其成本增加。等离子体处理装置由具有静电卡盘和聚焦环的基座构成。将要进行等离子体处理的晶片W安装在静电卡盘上。聚焦环具有电介质材料部分和导电材料部分。介电材料部分形成与静电卡盘接触设置的接触部分。导电材料部分面对电介质材料部分的静电卡盘。

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