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1. 发明申请

US20080116486A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20080116486A1
公开(公告)日：2008-05-22
申请号：US11939976
申请日：2007-11-14
申请人： Wataru SAITO , Akira Yoshioka , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta , Yorito Kakiuchi
发明人： Wataru SAITO , Akira Yoshioka , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta , Yorito Kakiuchi
IPC分类号： H01L29/80
CPC分类号： H01L29/045 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/41766 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0≦x≦1); a second semiconductor layer of n-type AlyGa1-yN (0
摘要翻译：一种半导体器件包括：p型Al x Ga 1-x N（0 <= x <= 1）的第一半导体层; 在第一半导体层上形成的n型Al y Ga 1-y N（0

2. 发明申请

US20110309413A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110309413A1
公开(公告)日：2011-12-22
申请号：US13218925
申请日：2011-08-26
申请人： Yasunobu SAITO , Wataru SAITO , Yorito KAKIUCHI , Tomohiro NITTA , Akira YOSHIOKA , Totsuya OHNO , Hidetoshi FUJIMOTO , Takao NODA
发明人： Yasunobu SAITO , Wataru SAITO , Yorito KAKIUCHI , Tomohiro NITTA , Akira YOSHIOKA , Totsuya OHNO , Hidetoshi FUJIMOTO , Takao NODA
IPC分类号： H01L29/872
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X
摘要翻译：一种半导体器件包括：包含Al x Ga 1-x N（0＆amp; N e; X 1; n 1; 1）的第一半导体层; 设置在第一半导体层上的第二半导体层，包括AlYGa1-YN（0＆lt; nlE; Y＆nlE; 1，X

3. 发明申请

US20100314666A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20100314666A1
公开(公告)日：2010-12-16
申请号：US12757528
申请日：2010-04-09
申请人： Wataru SAITO , Yasunobu SAITO , Takao NODA , Hidetoshi FUJIMOTO , Tetsuya OHNO
发明人： Wataru SAITO , Yasunobu SAITO , Takao NODA , Hidetoshi FUJIMOTO , Tetsuya OHNO
IPC分类号： H01L29/205
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/42316 , H01L29/7787
摘要： A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer; a second electrode provided on the second layer and juxtaposed to the first electrode in a first direction; and a floating electrode provided on the second layer, the floating electrode including: a portion sandwiched by the second electrode in a second direction orthogonal to the first direction; and a portion protruding from the second electrode toward the first electrode.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体构成的第一层; 第二层，设置在第一层上，由与第一氮化物半导体相比具有更大带隙的第二氮化物半导体构成; 电连接到第二层的第一电极; 设置在所述第二层上并沿第一方向与所述第一电极并置的第二电极; 以及设置在所述第二层上的浮置电极，所述浮置电极包括：在与所述第一方向正交的第二方向上被所述第二电极夹持的部分; 以及从第二电极朝向第一电极突出的部分。

4. 发明申请

US20130248931A1 NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译：氮化物半导体器件
公开(公告)号：US20130248931A1
公开(公告)日：2013-09-26
申请号：US13599951
申请日：2012-08-30
申请人： Wataru SAITO , Yasunobu SAITO , Hidetoshi FUJIMOTO , Akira YOSHIOKA , Tetsuya OHNO , Toshiyuki NAKA
发明人： Wataru SAITO , Yasunobu SAITO , Hidetoshi FUJIMOTO , Akira YOSHIOKA , Tetsuya OHNO , Toshiyuki NAKA
IPC分类号： H01L29/778
CPC分类号： H01L27/0727 , H01L21/8252 , H01L27/0207 , H01L27/0605 , H01L27/0629 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/7786 , H01L29/872 , H01L2924/0002 , H02M3/155 , H02M3/33569 , H02M2001/007 , H01L2924/00
摘要： According to one embodiment, a nitride semiconductor device has an electroconductive substrate, a first nitride semiconductor layer provided directly on the electroconductive substrate or provided on the electroconductive substrate through a buffer layer and formed of a non-doped nitride semiconductor, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, first and second element isolation insulating layers, and a frame electrode. The frame electrode is electrically connected to the source electrode and the electroconductive substrate, and surrounds outer peripheries of the heterojunction field effect transistor and the Schottky barrier diode.
摘要翻译：根据一个实施例，氮化物半导体器件具有导电衬底，第一氮化物半导体层，直接设置在导电衬底上，或通过缓冲层设置在导电衬底上，并由非掺杂氮化物半导体形成，第二氮化物半导体层设置在所述第一氮化物半导体层上并且由具有比所述第一氮化物半导体层宽的带隙的非掺杂或n型氮化物半导体形成的异质结场效应晶体管具有源电极，漏电极和栅电极，具有阳极电极和阴极电极的肖特基势垒二极管，第一和第二元件隔离绝缘层以及框架电极。框电极电连接到源电极和导电衬底，并且包围异质结场效应晶体管和肖特基势垒二极管的外周。

5. 发明申请

US20130062671A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20130062671A1
公开(公告)日：2013-03-14
申请号：US13420559
申请日：2012-03-14
申请人： Wataru SAITO , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Testsuya Ohno
发明人： Wataru SAITO , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Testsuya Ohno
IPC分类号： H01L29/78
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/1075 , H01L29/1087 , H01L29/2003 , H01L29/4236 , H01L29/7783
摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.
摘要翻译：氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。第二半导体层直接接合到第一半导体层。导电基板设置在电连接到第一半导体层上。第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。第一电极电连接到由Si形成的MOSFET的漏电极。控制电极与MOSFET的源电极电连接。导电基板电连接到MOSFET的栅电极。

6. 发明申请

US20120187413A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120187413A1
公开(公告)日：2012-07-26
申请号：US13238684
申请日：2011-09-21
申请人： Yasunobu SAITO , Hidetoshi FUJIMOTO , Tetsuya OHNO , Akira YOSHIOKA , Wataru SAITO
发明人： Yasunobu SAITO , Hidetoshi FUJIMOTO , Tetsuya OHNO , Akira YOSHIOKA , Wataru SAITO
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7787
摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.
摘要翻译：根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。第一，第二和第四半导体层包括氮化物半导体。第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。第三半导体层设置在第二半导体层上。第三半导体层是GaN。第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。第一电极设置在第三半导体层的一部分上。第四半导体层不设置在该部分上。

7. 发明申请

US20130082261A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20130082261A1
公开(公告)日：2013-04-04
申请号：US13612200
申请日：2012-09-12
申请人： Wataru SAITO , Syotaro ONO , Toshiyuki NAKA , Shunji TANIUCHI , Hiroaki YAMASHITA
发明人： Wataru SAITO , Syotaro ONO , Toshiyuki NAKA , Shunji TANIUCHI , Hiroaki YAMASHITA
IPC分类号： H01L27/088
CPC分类号： H01L27/0629 , H01L27/0727 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/42372 , H01L29/7803 , H01L29/7804 , H01L29/7805 , H01L29/7806 , H01L29/7808 , H01L29/7813 , H01L29/7827 , H01L29/868 , H01L29/872
摘要： A semiconductor device comprising: a Metal Oxide Semiconductor Field Effect Transistor including: a semiconductor substrate including a first semiconductor layer of a first conductivity type; second semiconductor layers of a second conductivity type extending in a depth direction from one surface of the semiconductor substrate, and having space each other; a first diode including a fifth semiconductor layer of the second conductivity type contacting the second semiconductor layer in one surface side of the semiconductor substrate, the first semiconductor layer and the second semiconductor layers; and an anode of the second diode connected to an anode of the first diode.
摘要翻译：一种半导体器件，包括：金属氧化物半导体场效应晶体管，包括：半导体衬底，包括第一导电类型的第一半导体层; 第二导电类型的第二半导体层，在深度方向上从半导体衬底的一个表面延伸并且彼此具有空间; 第一二极管，包括在半导体衬底的一个表面侧中与第二半导体层接触的第二导电类型的第五半导体层，第一半导体层和第二半导体层; 并且所述第二二极管的阳极连接到所述第一二极管的阳极。

8. 发明申请

US20120012929A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120012929A1
公开(公告)日：2012-01-19
申请号：US13051987
申请日：2011-03-18
申请人： Wataru SAITO , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru SAITO , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0865 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/42372 , H01L29/66734
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film. The trench penetrates through the fourth semiconductor layer from a surface of the fifth semiconductor layer and is in contact with the second semiconductor layer. The first main electrode is connected to the first semiconductor layer. The second main electrode is connected to the fourth semiconductor layer and the fifth semiconductor layer. The sixth semiconductor layer is provided between the fourth semiconductor layer and the second semiconductor layer. An impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the second semiconductor layer.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的第三半导体层，第二导电类型的第四半导体层，第一导电类型的第五半导体层，第一导电类型的控制电极，第一主电极，第二主电极和第六半导体层。第二半导体层和第三半导体层在与第一半导体层的主表面大致平行的方向上交替地设置在第一半导体层上。第四半导体层设置在第二半导体层和第三半导体层上。第五半导体层选择性地设置在第四半导体层的表面上。控制电极通过绝缘膜设置在沟槽中。沟槽从第五半导体层的表面穿过第四半导体层并且与第二半导体层接触。第一主电极连接到第一半导体层。第二主电极连接到第四半导体层和第五半导体层。第六半导体层设置在第四半导体层和第二半导体层之间。第六半导体层的杂质浓度高于第二半导体层的杂质浓度。

9. 发明申请

US20100308399A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20100308399A1
公开(公告)日：2010-12-09
申请号：US12728823
申请日：2010-03-22
申请人： Wataru SAITO , Syotaro ONO , Munehisa YABUZAKI , Nana HATANO , Miho WATANABE
发明人： Wataru SAITO , Syotaro ONO , Munehisa YABUZAKI , Nana HATANO , Miho WATANABE
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0626 , H01L29/0634 , H01L29/0657 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/7808 , H01L29/7811 , H01L29/7828
摘要： A power semiconductor device includes: a first semiconductor layer of the first conduction type; second semiconductor layers of the first conduction type and third semiconductor layers of the second conduction type alternately provided transversely on the first semiconductor layer; fourth semiconductor layers of the second conduction type provided on the surfaces of the third semiconductor layers; fifth semiconductor layers of the first conduction type provided selectively on the surfaces of the fourth semiconductor layer; sixth semiconductor layers of the second conduction type and seventh semiconductor layers of the first conduction type alternately provided transversely on the second and the third semiconductor layers; a first main electrode electrically connected to the first semiconductor layer; an insulation film provided on the fourth semiconductor layers, the sixth semiconductor layers and the seventh semiconductor layers; a control electrode provided on the fourth semiconductor layers, the sixth semiconductor layers and the seventh semiconductor layers via the insulation film; and a second main electrode joined to the surfaces of the fourth semiconductor layers and the fifth semiconductor layers, the sixth semiconductor layers being connected to the fourth semiconductor layers and to at least one of the third semiconductor layers, which is provided between two of the fourth semiconductor layers, and an impurity concentration of the third semiconductor layers provided below the sixth semiconductor layers being higher than an impurity concentration of the third semiconductor layers provided under the fourth semiconductor layers.
摘要翻译：功率半导体器件包括：第一导电类型的第一半导体层; 第一导电类型的第二半导体层和第二导电类型的第三半导体层交替地设置在第一半导体层上; 设置在第三半导体层的表面上的第二导电类型的第四半导体层; 选择性地在第四半导体层的表面上提供第一导电类型的第五半导体层; 第二导电类型的第六半导体层和第一导电类型的第七半导体层交替地设置在第二和第三半导体层上; 电连接到第一半导体层的第一主电极; 设置在第四半导体层，第六半导体层和第七半导体层上的绝缘膜; 设置在第四半导体层上的控制电极，第六半导体层和第七半导体层经由绝缘膜; 以及与所述第四半导体层和所述第五半导体层的表面接合的第二主电极，所述第六半导体层与所述第四半导体层连接，并且至少一个所述第三半导体层设置在所述第四半导体层并且设置在第六半导体层下方的第三半导体层的杂质浓度高于设置在第四半导体层下方的第三半导体层的杂质浓度。

10. 发明申请

US20100264489A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100264489A1
公开(公告)日：2010-10-21
申请号：US12719475
申请日：2010-03-08
申请人： Hiroshi OHTA , Wataru SAITO , Syotaro ONO , Munehisa YABUZAKI , Nana HATANO , Miho WATANABE
发明人： Hiroshi OHTA , Wataru SAITO , Syotaro ONO , Munehisa YABUZAKI , Nana HATANO , Miho WATANABE
IPC分类号： H01L27/06 , H01L29/78
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/7395 , H01L29/7813
摘要： A transistor contains a first semiconductor layer of a first conductivity type and a drift layer having a pillar structure in which a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type are alternately disposed in a direction parallel to a surface of the first semiconductor layer. The fourth semiconductor layer of the first conductivity type and the fifth semiconductor layer of the second conductivity type are alternately disposed and parallel to the drift layer. The fifth semiconductor layer has a larger amount of impurities than the fourth semiconductor layer. The sixth semiconductor layer of the first conductivity type and the seventh semiconductor layer of the second conductivity type are alternately disposed and parallel to the fourth and the fifth semiconductor layers. The seventh semiconductor layer has a smaller amount of impurities than the sixth semiconductor layer.
摘要翻译：晶体管包含第一导电类型的第一半导体层和具有柱结构的漂移层，其中第一导电类型的第二半导体层和第二导电类型的第三半导体层在平行于第一半导体层的表面。第一导电类型的第四半导体层和第二导电类型的第五半导体层交替地设置并平行于漂移层。第五半导体层的杂质量比第四半导体层大。第一导电类型的第六半导体层和第二导电类型的第七半导体层交替地设置并平行于第四和第五半导体层。第七半导体层的杂质量比第六半导体层少。

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