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1. 发明申请

US20100314666A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20100314666A1
公开(公告)日：2010-12-16
申请号：US12757528
申请日：2010-04-09
申请人： Wataru SAITO , Yasunobu SAITO , Takao NODA , Hidetoshi FUJIMOTO , Tetsuya OHNO
发明人： Wataru SAITO , Yasunobu SAITO , Takao NODA , Hidetoshi FUJIMOTO , Tetsuya OHNO
IPC分类号： H01L29/205
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/42316 , H01L29/7787
摘要： A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer; a second electrode provided on the second layer and juxtaposed to the first electrode in a first direction; and a floating electrode provided on the second layer, the floating electrode including: a portion sandwiched by the second electrode in a second direction orthogonal to the first direction; and a portion protruding from the second electrode toward the first electrode.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体构成的第一层; 第二层，设置在第一层上，由与第一氮化物半导体相比具有更大带隙的第二氮化物半导体构成; 电连接到第二层的第一电极; 设置在所述第二层上并沿第一方向与所述第一电极并置的第二电极; 以及设置在所述第二层上的浮置电极，所述浮置电极包括：在与所述第一方向正交的第二方向上被所述第二电极夹持的部分; 以及从第二电极朝向第一电极突出的部分。

2. 发明申请

US20110309413A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110309413A1
公开(公告)日：2011-12-22
申请号：US13218925
申请日：2011-08-26
申请人： Yasunobu SAITO , Wataru SAITO , Yorito KAKIUCHI , Tomohiro NITTA , Akira YOSHIOKA , Totsuya OHNO , Hidetoshi FUJIMOTO , Takao NODA
发明人： Yasunobu SAITO , Wataru SAITO , Yorito KAKIUCHI , Tomohiro NITTA , Akira YOSHIOKA , Totsuya OHNO , Hidetoshi FUJIMOTO , Takao NODA
IPC分类号： H01L29/872
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X
摘要翻译：一种半导体器件包括：包含Al x Ga 1-x N（0＆amp; N e; X 1; n 1; 1）的第一半导体层; 设置在第一半导体层上的第二半导体层，包括AlYGa1-YN（0＆lt; nlE; Y＆nlE; 1，X

3. 发明申请

US20130248931A1 NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译：氮化物半导体器件
公开(公告)号：US20130248931A1
公开(公告)日：2013-09-26
申请号：US13599951
申请日：2012-08-30
申请人： Wataru SAITO , Yasunobu SAITO , Hidetoshi FUJIMOTO , Akira YOSHIOKA , Tetsuya OHNO , Toshiyuki NAKA
发明人： Wataru SAITO , Yasunobu SAITO , Hidetoshi FUJIMOTO , Akira YOSHIOKA , Tetsuya OHNO , Toshiyuki NAKA
IPC分类号： H01L29/778
CPC分类号： H01L27/0727 , H01L21/8252 , H01L27/0207 , H01L27/0605 , H01L27/0629 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/7786 , H01L29/872 , H01L2924/0002 , H02M3/155 , H02M3/33569 , H02M2001/007 , H01L2924/00
摘要： According to one embodiment, a nitride semiconductor device has an electroconductive substrate, a first nitride semiconductor layer provided directly on the electroconductive substrate or provided on the electroconductive substrate through a buffer layer and formed of a non-doped nitride semiconductor, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, first and second element isolation insulating layers, and a frame electrode. The frame electrode is electrically connected to the source electrode and the electroconductive substrate, and surrounds outer peripheries of the heterojunction field effect transistor and the Schottky barrier diode.
摘要翻译：根据一个实施例，氮化物半导体器件具有导电衬底，第一氮化物半导体层，直接设置在导电衬底上，或通过缓冲层设置在导电衬底上，并由非掺杂氮化物半导体形成，第二氮化物半导体层设置在所述第一氮化物半导体层上并且由具有比所述第一氮化物半导体层宽的带隙的非掺杂或n型氮化物半导体形成的异质结场效应晶体管具有源电极，漏电极和栅电极，具有阳极电极和阴极电极的肖特基势垒二极管，第一和第二元件隔离绝缘层以及框架电极。框电极电连接到源电极和导电衬底，并且包围异质结场效应晶体管和肖特基势垒二极管的外周。

4. 发明申请

US20120187413A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120187413A1
公开(公告)日：2012-07-26
申请号：US13238684
申请日：2011-09-21
申请人： Yasunobu SAITO , Hidetoshi FUJIMOTO , Tetsuya OHNO , Akira YOSHIOKA , Wataru SAITO
发明人： Yasunobu SAITO , Hidetoshi FUJIMOTO , Tetsuya OHNO , Akira YOSHIOKA , Wataru SAITO
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7787
摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.
摘要翻译：根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。第一，第二和第四半导体层包括氮化物半导体。第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。第三半导体层设置在第二半导体层上。第三半导体层是GaN。第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。第一电极设置在第三半导体层的一部分上。第四半导体层不设置在该部分上。

5. 发明申请

US20120203458A1 MAP DATA, STORAGE MEDIUM, AND ELECTRONIC APPARATUS 有权
标题翻译：地图数据，存储媒体和电子设备
公开(公告)号：US20120203458A1
公开(公告)日：2012-08-09
申请号：US13367438
申请日：2012-02-07
申请人： Hidetoshi FUJIMOTO
发明人： Hidetoshi FUJIMOTO
IPC分类号： G06F17/30 , G01C21/34
CPC分类号： G01C21/34 , G01C21/32 , G09B29/003
摘要： A map data is disclosed. The map data comprises a link data and a segment data. The link data describes a characteristic of each link in a group of links on a link-by-link basis. The group of links forms a road network. The segment data relates to each segment in a group of segments on a segment-by-segment basis. The segments are defined in units of link string. Each link string is a string of multiple links and corresponds to a main road. Each link string terminates at least at an intersection of the main road. The multiple links are a part of the group of links. The segment data of each segment describes information on a storage destination of the link data corresponding to the link string that forms the each segment.
摘要翻译：公开了地图数据。地图数据包括链接数据和段数据。链接数据描述了在链路的基础上的一组链路中的每个链路的特性。该组链路形成一个道路网络。分段数据以逐段为基础与一组分段中的每个分段相关。段以链接字符串为单位定义。每个链接字符串是多个链接的字符串，并且对应于主要道路。每个链接字符串至少在主要道路的交点处终止。多个链接是链接组的一部分。每个段的段数据描述与形成每个段的链接串相对应的链接数据的存储目的地的信息。

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