专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09082691B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US09082691B2
公开(公告)日：2015-07-14
申请号：US13619560
申请日：2012-09-14
申请人： Akira Yoshioka , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
发明人： Akira Yoshioka , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
IPC分类号： H01L29/66 , H01L29/20 , H01L29/423 , H01L29/778
CPC分类号： H01L29/2003 , H01L29/0619 , H01L29/1066 , H01L29/4236 , H01L29/42364 , H01L29/7787
摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.
摘要翻译：氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二栅电极，互连层。第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。互连层电连接源电极，肖特基电极和第二栅电极。

2. 发明授权

US08860090B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08860090B2
公开(公告)日：2014-10-14
申请号：US13420559
申请日：2012-03-14
申请人： Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Tetsuya Ohno
发明人： Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Tetsuya Ohno
IPC分类号： H01L29/778 , H01L29/10 , H01L29/423
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/1075 , H01L29/1087 , H01L29/2003 , H01L29/4236 , H01L29/7783
摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.
摘要翻译：氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。第二半导体层直接接合到第一半导体层。导电基板设置在电连接到第一半导体层上。第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。第一电极电连接到由Si形成的MOSFET的漏电极。控制电极与MOSFET的源电极电连接。导电基板电连接到MOSFET的栅电极。

3. 发明申请

US20130069117A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20130069117A1
公开(公告)日：2013-03-21
申请号：US13619560
申请日：2012-09-14
申请人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
发明人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
IPC分类号： H01L29/778
CPC分类号： H01L29/2003 , H01L29/0619 , H01L29/1066 , H01L29/4236 , H01L29/42364 , H01L29/7787
摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.
摘要翻译：氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二栅电极，互连层。第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。互连层电连接源电极，肖特基电极和第二栅电极。

4. 发明申请

US20120187413A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120187413A1
公开(公告)日：2012-07-26
申请号：US13238684
申请日：2011-09-21
申请人： Yasunobu SAITO , Hidetoshi FUJIMOTO , Tetsuya OHNO , Akira YOSHIOKA , Wataru SAITO
发明人： Yasunobu SAITO , Hidetoshi FUJIMOTO , Tetsuya OHNO , Akira YOSHIOKA , Wataru SAITO
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7787
摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.
摘要翻译：根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。第一，第二和第四半导体层包括氮化物半导体。第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。第三半导体层设置在第二半导体层上。第三半导体层是GaN。第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。第一电极设置在第三半导体层的一部分上。第四半导体层不设置在该部分上。

5. 发明申请

US20110204380A1 NITRIDE-BASED FET 审中-公开
标题翻译：基于氮化物的FET
公开(公告)号：US20110204380A1
公开(公告)日：2011-08-25
申请号：US13032582
申请日：2011-02-22
申请人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Takao Noda
发明人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Takao Noda
IPC分类号： H01L29/772
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/1037 , H01L29/2003 , H01L29/4232 , H01L29/66462
摘要： According to an embodiment, in a nitride-based FET, a protrusion portion is formed at an upper portion of an undoped GaN layer by second recess etching. On the protrusion portion, an undoped AlGaN layer is provided which is formed by first recess etching the upper portion of the undoped AlGaN layer. A multilayer portion is composed of the protrusion portion of the undoped GaN layer, the undoped AlGaN layer, and an insulating film. A trench portion is formed by recess etching the insulating film, the undoped AlGaN layer and a surface of the undoped GaN layer. A gate insulating film is formed on the multilayer portion and the trench portion. A gate electrode is formed on the gate insulating film so as to cover the trench portion. A film thickness of the insulting film is set larger than that of the gate insulating film.
摘要翻译：根据一个实施例，在氮化物基FET中，通过第二凹陷蚀刻在未掺杂的GaN层的上部形成突出部分。在突起部分上，设置未掺杂的AlGaN层，其通过第一凹陷蚀刻未掺杂的AlGaN层的上部而形成。多层部分由未掺杂的GaN层的突出部分，未掺杂的AlGaN层和绝缘膜构成。通过凹陷蚀刻绝缘膜，未掺杂的AlGaN层和未掺杂的GaN层的表面来形成沟槽部分。在多层部分和沟槽部分上形成栅极绝缘膜。在栅极绝缘膜上形成栅电极以覆盖沟槽部分。绝缘膜的膜厚设定为大于栅极绝缘膜的膜厚。

6. 发明申请

US20070051977A1 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US20070051977A1
公开(公告)日：2007-03-08
申请号：US11507493
申请日：2006-08-22
申请人： Wataru Saito , Masaaki Onomura , Akira Tanaka , Koichi Tachibana , Masahiko Kuraguchi , Takao Noda , Tomohiro Nitta , Akira Yoshioka
发明人： Wataru Saito , Masaaki Onomura , Akira Tanaka , Koichi Tachibana , Masahiko Kuraguchi , Takao Noda , Tomohiro Nitta , Akira Yoshioka
IPC分类号： H01L31/00 , H01L21/336
CPC分类号： H01L29/7787 , H01L29/0649 , H01L29/0657 , H01L29/2003 , H01L29/42316
摘要： A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.
摘要翻译：一种氮化物半导体器件包括：衬底本体，包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。第一主电极设置在导电部分的上方，第二主电极设置在高电阻部分的上方。

7. 发明授权

US07157749B2 Bipolar transistor with a GaAs substrate and a SiGe base or collector 失效
标题翻译：具有GaAs衬底和SiGe基极或集电极的双极晶体管
公开(公告)号：US07157749B2
公开(公告)日：2007-01-02
申请号：US11053548
申请日：2005-02-09
申请人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
发明人： Hidetoshi Fujimoto , Tetsuro Nozu , Yoshitomo Sagae , Akira Yoshioka
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/267 , H01L29/1004 , H01L29/7371
摘要： A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.
摘要翻译：提供一种双极晶体管，其包括GaAs衬底，形成在GaAs衬底上的n型集电极区域，形成在n型集电极区域上并具有具有组成的SiGe的p型基极层的p型基极区域与GaAs衬底晶格匹配，以及形成在p型基极区上的n型发射极区。双极晶体管可以包括GaAs衬底，在GaAs衬底上形成的第一导电类型的集电极区域，并且包括具有与GaAs衬底晶格匹配的组成的第一导电类型SiGe的集电极接触层，形成在第一导电类型的集电极区域上的第二导电类型的第一导电类型的发射极区域和形成在第二导电类型的基极区域上的第一导电类型的发射极区域。

8. 发明申请

US20060252086A1 Process for producing vinylated nucleic acid 审中-公开
标题翻译：生产乙烯基化核酸的方法
公开(公告)号：US20060252086A1
公开(公告)日：2006-11-09
申请号：US11438463
申请日：2006-05-23
申请人： Toshitaka Uragaki , Fumiaki Watanabe , Chiaki Nagahama , Fujio Yu , Katsuaki Kikuchi , Akira Yoshioka
发明人： Toshitaka Uragaki , Fumiaki Watanabe , Chiaki Nagahama , Fujio Yu , Katsuaki Kikuchi , Akira Yoshioka
IPC分类号： C12Q1/68 , C12P19/34 , C07H21/04
CPC分类号： C07H21/00
摘要： This invention provides a process for producing a vinylated nucleic acid in an efficient and cost-effective manner through the implementation of vinylation of an amino-containing nucleic acid with a vinylating agent. This invention also provides a process for producing a vinylated nucleic acid in an efficient and cost-effective manner by a method in which PCR is carried out in the presence of an amino-modified nucleotide and dNTP and a vinyl group is introduced into the resulting PCR amplification product or by a method in which PCR is carried out in the presence of a vinyl-modified nucleotide and cNTP.
摘要翻译：本发明提供了一种通过使用乙烯化剂实施含氨基核酸的乙烯化作用，以有效且成本有效的方式生产乙烯基化核酸的方法。本发明还提供了通过在氨基修饰的核苷酸和dNTP的存在下进行PCR并将乙烯基引入到所得PCR中的方法，以有效和成本有效的方式制备乙烯基化核酸的方法扩增产物或通过在乙烯基修饰的核苷酸和cNTP存在下进行PCR的方法。

9. 发明授权

US5924721A Side impact air bag system 失效
标题翻译：侧面冲击气囊系统
公开(公告)号：US5924721A
公开(公告)日：1999-07-20
申请号：US833648
申请日：1997-04-08
申请人： Junichi Nakamura , Tsutomu Ookochi , Noritaka Nagayama , Mikiharu Shimoda , Akira Yoshioka
发明人： Junichi Nakamura , Tsutomu Ookochi , Noritaka Nagayama , Mikiharu Shimoda , Akira Yoshioka
IPC分类号： B60R21/20 , B60R21/16 , B60R21/207 , B60R21/233 , B60R21/2342 , B60R21/237 , B60R21/22
CPC分类号： B60R21/233 , B60R21/23138 , B60R21/2342 , B60R2021/23146 , B60R21/237
摘要： In a side impact air bag system having a bag comprising a main body, an upper inflation unit, and a lower inflation unit, the boundaries of the main body and the upper inflation unit and the lower inflation unit are joined and temporally sewn by sewn portions. The main body is inflated without having the upper and lower units inflated until the blowing gas from an inflator into the bag reaches a pressure above a predetermined pressure, and when the pressure inside the bag reaches the pressure above the predetermined pressure, the sewn portions are separated therefrom to flow gas into the upper and lower inflation units to deploy the upper and lower inflation units. Thus, the bag is positively inflated in a narrow space between a passenger and a vehicle without excessively increasing impact against a chest portion of the passenger.
摘要翻译：在具有包括主体，上部充气单元和下部充气单元的袋的侧面碰撞气囊系统中，主体和上部充气单元和下部充气单元的边界通过缝合部分接合和临时缝合。主体充气而不会使上下单元膨胀，直到来自充气机的吹入气体进入袋中达到高于预定压力的压力，并且当袋内的压力达到高于预定压力的压力时，缝合部分与其分离以将气体流入上部和下部充气单元以部署上部和下部充气单元。因此，在乘客和车辆之间的狭窄空间中，袋子被积极地充气，而不会对乘客的胸部产生过大的冲击。

10. 发明授权

US3998789A Flame resistant thermosetting resin composition and method for preparing same 失效
标题翻译：耐火热固化树脂组合物及其制备方法
公开(公告)号：US3998789A
公开(公告)日：1976-12-21
申请号：US504175
申请日：1974-09-09
申请人： Akira Yoshioka
发明人： Akira Yoshioka
IPC分类号： C08K5/51 , C08K5/5353 , C08L61/00 , C08L101/00 , C08K5/52 , C08K5/53 , C08G79/04
CPC分类号： C08L61/00 , C08K5/51 , C08K5/5353 , C08L101/00
摘要： A thermosetting resin may be imparted with favorable flame resistance, heat resistance, and curing characteristics by the incorporation of a heat resistant polyphosphoric acid ester or an organic phosphonate compound containing a hydroxymethyl or amide group. Such a resin is suitable particularly as a material for manufacturing those thermosetting molding compounds, laminates, electrical insulating materials such as insulating varnishes, and adhesives which are required to be flame resistant.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式